Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR225CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting package GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 20 V / 25 V a2 3 a1 1 IO(AV) = 2 A VF ≤ 0.33V k 2 PINNING Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR225CT series is supplied in the surface mounting SOT223 package. PIN SOT223 DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode 4 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR2 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature per diode Storage temperature MAX. UNIT - 20CT 20 25CT 25 V - 20 25 V Tsp ≤ 97 ˚C - 20 25 V square wave; δ = 0.5; Tsp ≤ 136 ˚C - 2 A square wave; δ = 0.5; Tsp ≤ 136 ˚C - 2 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 6 6.6 A A - 1 A - 150 ˚C - 40 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-sp one or both diodes conducting - - 15 K/W pcb mounted, minimum footprint pcb mounted, pad area as in fig:1 - 156 70 - K/W K/W Rth j-a March 1998 Thermal resistance junction to solder point Thermal resistance junction to ambient MIN. 1 TYP. MAX. UNIT Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR225CT series ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Cd Junction capacitance IF = 1 A; Tj = 125˚C IF = 2 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. - TYP. MAX. UNIT 0.28 0.42 0.05 5 160 0.33 0.51 3 10 - V V mA mA pF PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.1. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). March 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 0.7 PBYR225CT series PBYR225CT PF / W Tsp(max) / C Vo = 0.35 V Rs = 0.038 Ohms 0.6 BYV116 141.5 0.5 143.2 0.4 100 0.2 0.3 144.9 0.1 tp I 0.2 D= tp T 146.6 148.3 0.1 t T 0 Cd / pF 139.8 D = 1.0 0.5 1000 138.1 0 0.5 150 1.5 1 10 1 10 VR / V IF(AV) / A Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 2 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR225CT IF / A 100 100 Transient thermal impedance, Zth j-sp (K/W) Tj = 25 C Tj = 125 C 10 1.5 typ max 1 1 0.5 0.1 0 0 0.1 0.2 0.3 0.4 VF / V 0.5 0.6 0.01 1us 0.7 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj 100mA PD tp D= t T 10us 100us 1ms 10ms pulse width, tp (s) tp T 100ms 1s 10s PBYR225CT Fig.6. Transient thermal impedance; per diode; Zth j-sp = f(tp). BYV116 IR / A 150 C 10mA 125 C 1mA 100 C 75 C 100uA 50 C 10uA Tj = 25 C 1uA 0 5 10 VR / V 15 20 25 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj March 1998 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR225CT series MECHANICAL DATA Dimensions in mm 6.7 6.3 Net Mass: 0.11 g B 3.1 2.9 0.32 0.24 0.2 4 A A 0.10 0.02 16 max M 7.3 6.7 3.7 3.3 13 2 1 10 max 1.8 max 1.05 0.80 2.3 0.60 0.85 4.6 3 0.1 M B (4x) Fig.7. SOT223 surface mounting package. Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8". March 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR225CT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1998 5 Rev 1.100