2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 60 V VGS gate-source voltage - - ±20 V ID drain current Tamb = 25 °C; VGS = 10 V - - 300 mA RDSon drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 500 mA - 1 1.6 Ω 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002P Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002P LW* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VGS gate-source voltage - ±20 V ID drain current IDM 2N7002P_1 Product data sheet VGS = 10 V peak drain current Tamb = 25 °C - 300 mA Tamb = 100 °C - 180 mA - 1.2 A Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max Unit [1] - 250 mW [2] - 350 mW - 830 mW 150 °C −55 +150 °C −65 +150 °C Source-drain diode IS source current Tamb = 25 °C - 300 mA ISM peak source current Tamb = 25 °C; single pulse; tp ≤ 10 μs - 1.2 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. 017aaa002 120 Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature 2N7002P_1 −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa014 10 ID (A) 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) 2N7002P_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - 325 500 K/W [2] - - 350 K/W - - 150 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa015 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05 0.02 0.01 10 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa016 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 10 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.75 2.4 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1.3 2 Ω - 1 1.6 Ω 0.2 - - mS - 0.5 0.6 nC - 0.1 - nC - 0.3 - nC - 30.2 50 pF - 6.6 - pF - 3.8 - pF - 3 20 ns - 4 - ns - 10 20 ns - 5 - ns 0.47 0.88 1.3 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD [1] 2N7002P_1 Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.5 V ID (A) 0.6 4.0 V 017aaa018 10−3 ID (A) 0.5 10−4 3.5 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 4.0 0 1 2 VDS (V) 3 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa019 10.0 RDSon (Ω) (1) Sub-threshold drain current as a function of gate-source voltage 017aaa020 6.0 RDSon (Ω) (2) 7.5 4.0 5.0 (1) 2.0 (2) 2.5 (3) (4) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 °C (2) VGS = 3.5 V (2) Tamb = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002P_1 Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa021 1.0 ID (A) 017aaa022 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) 0 Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa024 102 (1) (1) C (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002P_1 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa025 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDD = 6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 18. Package outline SOT23 (TO-236AB) 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint SOT23 (TO-236AB) 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002P_1 20100419 Product data sheet - - 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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All rights reserved. 14 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 2N7002P_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 2N7002P NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 April 2010 Document identifier: 2N7002P_1