PHILIPS PSS9014C

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS9014C
NPN general purpose transistor
Product specification
Supersedes data of 2002 Sep 20
2004 Aug 10
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
PINNING
FEATURES
• High power dissipation: 500 mW
PIN
DESCRIPTION
• Low collector capacitance
1
collector
• Low collector-emitter saturation voltage
2
base
• High current capability.
3
emitter
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage1
DESCRIPTION
1
2
3
2
NPN low VCEsat transistor in a SOT54 (TO-92) plastic
package.
3
MAM279
MARKING
TYPE NUMBER
MARKING CODE
PSS9014C
Fig.1
Simplified outline (SOT54) and symbol.
S9014C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
VCEO
collector-emitter voltage
open base
−
45
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
500
mW
Tamb ≤ 25 °C; note 1
V
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2004 Aug 10
2
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
UNIT
250
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 30 V; IE = 0
−
−
15
nA
VCB = 30 V; IE = 0; Tamb = 150 °C
−
−
5
µA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
300
600
IC = 2 mA; VCE = 5 V
200
300
450
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 5 mA; note 1
−
200
300
mV
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.5 mA; note 1
−
815
850
mV
VBEon
base-emitter turn-on voltage
IC = 2 mA; VCE = 5 V
580
650
700
mV
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
100
220
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0; f = 1 MHz
−
1.6
1.75
pF
F
noise figure
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
−
−
10
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Aug 10
3
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
MLD927
103
handbook, halfpage
MLD928
104
handbook, halfpage
VCEsat
h FE
(mV)
102
103
10
102
1
10−1
1
102
10
IC (mA)
10
10−2
103
VCE = 5 V.
IC/IB = 20.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD929
104
handbook, halfpage
10−1
1
10
102
103
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD930
104
handbook, halfpage
VBE
(mV)
VBEsat
(mV)
103
103
102
102
10
10−2
10−1
1
10
10
10−2
102
103
IC (mA)
10−1
1
10
102
103
IC (mA)
IC/IB = 20.
Fig.4
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Aug 10
Fig.5
4
Base-emitter voltage as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 10
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Aug 10
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R75/03/pp7
Date of release: 2004
Aug 10
Document order number:
9397 750 13686