BLF6G22-45 Power LDMOS transistor Rev. 02 — 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) (MHz) (V) (W) 2110 to 2170 28 2.5 ηD ACPR (dB) (%) (dBc) 18.5 13 −49[1] Gp Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: u Average output power = 2.5 W u Power gain = 18.5 dB (typ) u Efficiency = 13 % u ACPR = −49 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2000 MHz to 2200 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 2 3 3 2 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G22-45 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 12.5 W (CW) 1.7 K/W BLF6G22-45_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 2 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 72 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 300 mA 1.65 2.15 2.65 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 12.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 3.5 A - 5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2.5 A - 0.2 - Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 405 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions PL(AV) average output power Min Typ Max Unit - 2.5 - W Gp power gain PL(AV) = 2.5 W 17.3 18.5 19.7 dB ηD drain efficiency PL(AV) = 2.5 W 10.5 13 - % ACPR adjacent channel power ratio PL(AV) = 2.5 W - −49 −46 dBc 7.1 Ruggedness in class-AB operation The BLF6G22-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 405 mA; PL = 45 W (CW); f = 2170 MHz. BLF6G22-45_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 3 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 001aah604 22 Gp (dB) 20 ηD 60 ηD (%) 50 40 18 Gp 16 30 14 20 12 0 10 20 30 10 50 60 PL (W) 40 VDS = 28 V; IDq = 405 mA; f = 2170 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah605 20 Gp (dB) 19 Gp 60 ηD (%) 50 001aah606 −10 IMD (dBc) −20 IMD3 18 40 −30 17 30 −40 16 20 −50 15 10 −60 0 −70 IMD5 ηD 14 0 10 20 30 40 50 60 70 PL(PEP) (W) 0 VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Fig 2. IMD7 20 30 40 50 60 70 PL(PEP) (W) VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values BLF6G22-45_2 Product data sheet 10 © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 4 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 001aah607 20 Gp (dB) 19 ηD (%) ηD 001aah608 −30 ACPR (dBc) −35 30 25 Gp −40 20 18 −45 15 17 −50 10 16 15 0 2 4 −55 −60 5 8 10 PL(AV) (W) 6 0 VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 4. 2 4 6 8 10 PL(AV) (W) VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values 8. Test information VGG VDD C11 C12 C13 C14 C15 C4 C3 C5 C6 C10 C16 R1 input 50 Ω C2 C18 C1 C17 C7 C8 C9 output 50 Ω 001aah609 See Table 8 for list of components. Fig 6. Test circuit for operation at 2110 MHz and 2170 MHz BLF6G22-45_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 5 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor C16 C3 C15 C4 C5 C6 R1 C10 C14 C11 C12 C13 C2 C18 C7 C8 C1 C9 C17 001aah610 Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) with εr = 2.2 and thickness = 0.79 mm. See Table 8 for list of components. Fig 7. Component layout for 2110 MHz and 2170 MHz test circuit Table 8. List of components For test circuit, see Figure 6 and Figure 7. Component Description Value C1, C2, C17, C18 multilayer ceramic chip capacitor 6.8 pF C3, C15 tantalum capacitor 10 µF C4, C5 multilayer ceramic chip capacitor 1.5 µF C6, C12 multilayer ceramic chip capacitor 10 pF [2] C7 multilayer ceramic chip capacitor 0.5 pF [2] C8 multilayer ceramic chip capacitor 1.2 pF [2] C9 multilayer ceramic chip capacitor 1.0 pF [2] C10, C11 multilayer ceramic chip capacitor 100 nF C13 multilayer ceramic chip capacitor 220 nF C14 multilayer ceramic chip capacitor 4.7 µF C16 electrolytic capacitor 220 µF, 63 V R1 chip resistor 5.6 Ω [1] American technical ceramics type 100A or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. BLF6G22-45_2 Product data sheet Remarks [1] © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 6 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 10.21 10.29 10.01 10.03 inches 0.182 0.148 0.285 0.006 0.275 0.004 0.402 0.405 0.394 0.395 OUTLINE VERSION D D1 F H p Q q U1 U2 w1 w2 10.21 10.29 10.01 10.03 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.402 0.405 0.394 0.395 0.045 0.620 0.035 0.580 0.130 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 E E1 REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-02-22 02-02-11 SOT608A Fig 8. EUROPEAN PROJECTION Package outline SOT608A BLF6G22-45_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 7 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Waveform DPCH Dedicated Physical CHannel IMD InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G22-45_2 20080421 - Modifications: • • Product data sheet The combined data sheet is split up into two separate data sheets. Table 1 and Table 7: ACPR values changed. BLF6G22-45_BLF6G22S-45_1 20080219 Preliminary data sheet - BLF6G22-45_2 Product data sheet BLF6G22-45_BLF6G22S-45_1 - © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 8 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G22-45_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 21 April 2008 9 of 10 BLF6G22-45 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 April 2008 Document identifier: BLF6G22-45_2