DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range. handbook, halfpage 1 DESCRIPTION 3 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view MBK394 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) pulse droop (dB) tr (ns) tf (ns) 1200 to 1400 36 150 250 >12 >42 <0.6 <100 <100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±22 V Ptot total power dissipation − 400 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Th ≤ 70 °C; tp = 1 ms; δ = 10% CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Aug 29 2 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Zth j-h thermal impedance from junction to heatsink Th = 25 °C, note 1 0.17 K/W Zth j-h thermal impedance from junction to heatsink Th = 25 °C, note 2 0.32 K/W Notes 1. Thermal resistance is determined under RF operating conditions; tp = 100 µs, δ = 10%. 2. Thermal resistance is determined under RF operating conditions; tp = 1 ms, δ = 10%. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 36 V − − 1 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 45 − − A IGSS gate leakage current VGS = ±20 V; VDS = 0 − − 1 µA gfs forward transconductance VDS = 10 V; ID = 10 A − 9 − S RDSon drain-source on-state resistance VGS = 9 V; ID = 10 A − 60 − mΩ APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Zth mb-h = 0.25 K/W, unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) pulse droop (dB) tr (ns) tf (ns) 1200 to 1400 36 150 250 >12 >42 <0.6 <100 <100 MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% Ruggedness in class-AB operation The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power. Typical impedance FREQUENCY (GHZ) 2003 Aug 29 ZS (Ω) ZL (Ω) 1.20 1.3 − j 2.8 1.1 − j 0.9 1.25 1.9 − j 2.9 1.0 − j 0.5 1.30 4.6 − j 2.9 0.8 − j 0.2 1.35 5.7 − j 0.3 0.7 − j 0.3 1.40 2.7 − j 1.8 0.6 − j 0.4 3 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 MLD858 300 MLD859 300 handbook, halfpage handbook, halfpage PL (W) PL (W) 200 200 (3) (3) 100 100 (2) (2) (1) (1) 0 0 4 8 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%. Fig.2 12 Pi (W) 0 16 0 (3) f = 1.4 GHz. Fig.3 MLD860 16 Gp (dB) (2) 8 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%. Load power as function of input power; typical values. handbook, halfpage 4 MLD861 Gp (dB) (1) 8 8 4 4 0 16 (3) f = 1.4 GHz. 16 12 Pi (W) Load power as function of input power; typical values. handbook, halfpage (3) 12 (2) (3) (1) 0 0 100 200 300 0 100 PL (W) (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%. Fig.4 12 300 PL (W) (3) f = 1.4 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%. Power gain as function of load power; typical values. 2003 Aug 29 200 Fig.5 4 (3) f = 1.4 GHz. Power gain as function of load power; typical values. Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 MLD862 60 MLD863 60 handbook, halfpage handbook, halfpage (1) ηD ηD (%) (2) (%) (1) (3) 40 (2) 40 (3) 20 20 0 100 0 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%. Fig.6 200 PL (W) 0 300 (3) f = 1.4 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%. Efficiency as function of load power; typical values. MLD864 15 Gp handbook, halfpage Fig.7 60 ηD PL (W) 300 (3) f = 1.4 GHz. Efficiency as function of load power; typical values. MLD865 15 Gp (dB) 14 50 ηD 200 handbook, halfpage (%) (dB) 14 100 0 60 ηD (%) Gp 50 ηD Gp 40 13 40 12 30 12 30 11 20 11 20 13 10 1.15 1.25 1.35 f (GHz) 10 1.45 10 1.15 tp = 1 ms; δ = 10%. tp = 100 µs; δ = 10%. Fig.8 Fig.9 Power gain and drain efficiency as functions of frequency; typical values. 2003 Aug 29 5 1.25 1.35 f (GHz) 10 1.45 Power gain and drain efficiency as functions of frequency; typical values. Philips Semiconductors Product specification L-band radar LDMOS transistor handbook, full pagewidth BLL1214-250 40 40 60 C8 C7 C4 & C6 C3 & C5 C2 C1 MLD866 Dimensions in mm. Hatched area indicates standard tuning. The components are situated on one side of the copper-clad Rodgers Duroid 6010 printed-circuit board (εr = 10.2, thickness = 0.64 mm). The other side is unetched and serves as a ground plane. Fig.10 Component layout. 2003 Aug 29 6 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 List of components (see Fig.10) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C3 capacitor 39 pF ATC100A C2, C4 capacitor 47 pF ATC100A C5, C6 capacitor 20 nF ATC200B C7 capacitor 36 pF ATC200B C8 electrolytic capacitor 100 µF; 100 V 2003 Aug 29 7 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A 2003 Aug 29 0.210 0.133 0.170 0.123 8 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 29 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp10 Date of release: 2003 Aug 29 Document order number: 9397 750 11576