BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f (MHz) (V) (W) 2-carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL(AV) ηD IMD3 ACPR (dB) (%) (dBc) (dBc) 18.2 29 −37[1] −41[1] Gp Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 = −37 dBc ACPR = −41 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 Simplified outline Graphic symbol 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name BLF6G22LS-100 - Description Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 29 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics BLF6G22LS-100_2 Product data sheet Table 5. Thermal characteristics Symbol Parameter Conditions Typ Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 25 W 0.43 K/W All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 Unit © NXP B.V. 2010. All rights reserved. 2 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 1.76 2.26 2.76 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 22 28 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 11 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.16 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 91 MHz - 2.1 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit - 25 - W PL(AV) = 25 W 17 18.2 - dB input return loss PL(AV) = 25 W - −9 −7 dB ηD drain efficiency PL(AV) = 25 W 27.5 29 - % IMD3 third-order intermodulation distortion PL(AV) = 25 W - −37 −34.5 dBc ACPR adjacent channel power ratio PL(AV) = 25 W - −41 −38.5 dBc PL(AV) average output power Gp power gain IRL 7.1 Ruggedness in class-AB operation The BLF6G22LS-100 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz. BLF6G22LS-100_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah695 20 Gp (dB) 19 Gp 18 60 ηD (%) 50 40 ηD 17 30 16 20 15 10 14 0 20 40 60 80 100 0 120 140 PL (W) VDS = 28 V; IDq = 950 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 7.3 Two-tone CW 001aah696 20 Gp (dB) 60 ηD (%) Gp 001aah697 −20 IMD (dBc) IMD3 −30 IMD5 18 40 −40 ηD IMD7 −50 16 20 −60 14 0 60 0 180 120 −70 0 PL(PEP) (W) Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values BLF6G22LS-100_2 Product data sheet 120 180 PL(PEP) (W) VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±100 kHz). Fig 2. 60 VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±100 kHz). Fig 3. Two-tone CW intermodulation distortion as function of peak envelope load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aah698 21 36 ηD (%) Gp (dB) 001aah699 −35 IMD3 ACPR (dBc) −40 19 24 Gp −45 17 12 ηD IMD3 −50 ACPR 15 0 0 10 20 30 −55 0 PL(AV) (W) 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values BLF6G22LS-100_2 Product data sheet 20 30 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz); carrier spacing 10 MHz. Fig 4. 10 VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz); carrier spacing 10 MHz. Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 8. Test information C22 C23 R1 C11 C3 C13 C4 C5 R2 C6 C7 C9 C10 C12 C8 C1 C19 C2 C15 C16 C17 C18 OUTPUT PCB V2 C14 INPUT PCB V1 C21 C20 TB TB 001aah700 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 6. Component layout Table 8. List of components (see Figure 6) Component BLF6G22LS-100_2 Product data sheet Description Value Remarks C1 multilayer ceramic chip capacitor 5.6 pF [1] C2 multilayer ceramic chip capacitor 1.0 pF [1] C3, C4, C12, C13, multilayer ceramic chip capacitor C17, C18 1.5 μF SMD 0805; TDK or capacitor of same quality C5, C6, C10, C15 multilayer ceramic chip capacitor 100 nF SMD 0603; Murata or capacitor of same quality C7 multilayer ceramic chip capacitor 1.5 pF [1] C8 multilayer ceramic chip capacitor 0.6 pF [1] All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor Table 8. Component Description Value Remarks C9, C14 multilayer ceramic chip capacitor 220 nF SMD 1206; AVX or capacitor of same quality C11, C16 multilayer ceramic chip capacitor 10 pF [1] C19 multilayer ceramic chip capacitor 1.1 pF [1] C20 multilayer ceramic chip capacitor 0.5 pF [1] C21 multilayer ceramic chip capacitor 20 pF [1] C22 tantalum capacitor 10 μF; 35 V C23 electrolytic capacitor 220 μF; 35 V R1 SMD resistor 3.6 Ω R2 SMD resistor 5.1 Ω [1] BLF6G22LS-100_2 Product data sheet List of components (see Figure 6) …continued American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 7. 0.390 0.010 0.380 Package outline SOT502B BLF6G22LS-100_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G22LS-100_2 20100331 Product data sheet - BLF6G22LS-100_1 - - Modifications: BLF6G22LS-100_1 BLF6G22LS-100_2 Product data sheet • Table 7: Updated several values 20080218 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF6G22LS-100_2 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G22LS-100_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 31 March 2010 Document identifier: BLF6G22LS-100_2