RR264M-400 Diodes Rectifying diode RR264M- 400 zApplications General rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) High reliability. PMDU zConstruction Silicon diffused junction zStructure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date zTaping dimensions (Unit : mm) φ1.55±0.05 1.81±0.1 4.0±0.1 8.0±0.2 φ1.0±0.1 3.71±0.1 0.25±0.05 1.75±0.1 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Sym bol Lim its Unit VR IF 400 1 V A Average rectified forward current (*1) Forward current s urge peak （ 60Hz・ 1cyc ） Io IFSM 0.7 25 A A J unction tem perature S torage tem perature Tj Ts tg 150 -55 to +150 ℃ Param eter P eak revers e voltage (repetitive peak) Forward current (DC) ℃ (*1) Mounted on epoxy board. 180 ° Half s ine wave zElectrical characteristics (Ta=25°C) Param eter Sym bol Min. Typ. Max. Unit Forward voltage VF - - 1.1 V IF =0.7A Conditions Revers e current IR - - 10 uA VR =400V Rev.B 1/3 RR264M-400 Diodes zElectrical characteristic curves (Ta=25°C) 100000 Ta=75℃ 10000 Ta=25℃ Ta=150℃ 0.1 Ta=-25℃ 0.01 REVERSE CURRENT:IR(nA) 1000 Ta=25℃ 10 Ta=-25℃ 1 0 200 400 600 800 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 1200 100 200 300 1 400 0 AVE:940.7mV 400 130 120 350 110 300 100 250 200 150 AVE:34.13nA 100 AVE:99.5pF 80 70 60 0 50 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 10 1cyc 1cyc Ifsm Ifsm 8.3ms 8.3ms 50 AVE:44.0A Ta=25℃ IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 9 RESERVE RECOVERY TIME:trr(us) 150 100 90 50 920 30 Ta=25℃ f=1MHz VR=0V n=10pcs 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 940 930 Ta=25℃ VR=400V n=30pcs 450 950 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 150 500 Ta=25℃ IF=1A n=30pcs 960 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 970 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 0.1 0.001 FORWARD VOLTAGE:VF(mV) Ta=75℃ 100 f=1MHz 8 7 6 5 4 AVE:4.860us 3 2 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=125℃ 100 Ta=150℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ifsm 8.3ms 8.3ms 1cyc 50 1 0 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 100 Mounted on epoxy board 1000 1cyc Ifsm 8.3ms 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=10mA IF=0.35A 1.5 DC 1ms time Rth(j-a) 300us 100 Rth(j-c) 10 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 D=1/2 1 Sin(θ＝180) 0.5 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RR264M-400 Diodes AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 REVERSE POWER DISSIPATION:PR (W) 0.008 t 1.5 0.006 Sin(θ＝180) D=1/2 0.004 DC DC 1 0 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.5 0.002 2 Io Io 0A0 0V0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.01 Sin(θ＝180) 0A 0V 1.5 T DC 1 Io t VR D=t/T VR=15V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 AVE:28.4kV 20 15 10 5 AVE:6.90kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1