LM136-5.0, LM236-5.0, LM336-5.0 www.ti.com SNVS750D – JUNE 1999 – REVISED MARCH 2013 LM136-5.0, LM236-5.0, LM336-5.0 5.0V Reference Diode Check for Samples: LM136-5.0, LM236-5.0, LM336-5.0 FEATURES DESCRIPTION • • • • • • • • • The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal on the LM1365.0 allows the reference voltage and temperature coefficient to be trimmed easily. 1 2 Adjustable 4V to 6V Low Temperature Coefficient Wide Operating Current of 600 μA to 10 mA 0.6Ω Dynamic Impedance ± 1% Initial Tolerance Available Specified Temperature Stability Easily Trimmed for Minimum Temperature Drift Fast Turn-on Three Lead Transistor Package The LM136-5.0 series is useful as a precision 5.0V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 5.0V makes it convenient to obtain a stable reference from low voltage supplies. Further, since the LM136-5.0 operates as a shunt regulator, it can be used as either a positive or negative voltage reference. The LM136-5.0 is rated for operation over −55°C to +125°C while the LM236-5.0 is rated over a −25°C to +85°C temperature range. The LM336-5.0 is rated for operation over a 0°C to +70°C temperature range. See the Connection Diagrams for available packages. For applications requiring 2.5V see LM136-2.5. Connection Diagrams Figure 1. TO-92 Plastic Package (Bottom View) Figure 2. TO Metal Can Package (Bottom View) Figure 3. SOIC Package 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999–2013, Texas Instruments Incorporated LM136-5.0, LM236-5.0, LM336-5.0 SNVS750D – JUNE 1999 – REVISED MARCH 2013 www.ti.com Typical Applications Figure 4. 5.0V Reference † Adjust to 5.00V * Any silicon signal diode Figure 5. 5.0V Reference with Minimum Temperature Coefficient * Does not affect temperature coefficient Figure 6. Trimmed 4V to 6V Reference with Temperature Coefficient Independent of Breakdown Voltage 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 LM136-5.0, LM236-5.0, LM336-5.0 www.ti.com SNVS750D – JUNE 1999 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) Reverse Current 15 mA Forward Current 10 mA −60 to +150 °C LM136-5.0 −55 to +150 °C LM236-5.0 −25 to +85 °C LM336-5.0 0 to +70 °C TO-92 Package (10 sec.) 260 °C TO Package (10 sec.) 300 °C Vapor Phase (60 sec.) 215 °C Infrared (15 sec.) 220 °C Storage Temperature Operating Temperature Range (2) Soldering Information SOIC Package (1) (2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified operating conditions. For elevated temperature operation, Tj max see THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) LM136 150°C LM236 125°C LM336 100°C Thermal Resistance θja (Junction to Ambient) TO-92 180°C/W (0.4″ Leads) TO SOIC-8 440°C/W 165°C/W 80°C/W N/A 170°C/W (0.125″ Leads) θja (Junction to Case) N/A ELECTRICAL CHARACTERISTICS Parameter Reverse Breakdown Voltage Conditions LM136A-5.0/LM236A-5.0 LM336B-5.0 LM136-5.0/LM236-5.0 LM336-5.0 Min Typ LM136-5.0/LM236-5.0/LM336-5.0 4.9 5.00 LM136A-5.0/LM236A-5.0, LM336B-5.0 4.95 5.00 6 0.6 Max Units Min Typ Max 5.1 4.8 5.00 5.2 5.05 4.90 5.00 5.1 V 12 6 20 mV 1.2 0.6 2 Ω 4 12 mV TA=25°C, IR=1 mA Reverse Breakdown Change TA=25°C, With Current 600 μA≤IR≤10 mA Reverse Dynamic Impedance TA=25°C, IR=1 mA, f = 100 Hz V Temperature Stability VR Adjusted 5.00V (2) IR=1 mA, (Figure 15) 0°C≤TA≤70°C (LM336-5.0) (1) (2) Unless otherwise specified, the LM136-5.0 is specified from −55°C≤TA≤+125°C, the LM236-5.0 from −25°C≤TA≤+85°C and the LM3365.0 from 0°C≤TA≤+70°C. Temperature stability for the LM336 and LM236 family is specified by design. Design limits are specified (but not 100% percent production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum charge in VREF from 25°C to TA(min) or TA(max). Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 Submit Documentation Feedback 3 LM136-5.0, LM236-5.0, LM336-5.0 SNVS750D – JUNE 1999 – REVISED MARCH 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) (1) LM136A-5.0/LM236A-5.0 Parameter Conditions LM136-5.0/LM236-5.0 Min Reverse Breakdown Change LM336B-5.0 LM336-5.0 Min Typ Units Typ Max Max −25°C≤TA≤+85°C (LM236-5.0) 7 18 mV −55°C≤TA≤+125°C (LM136-5.0) 20 36 mV 600 μA≤IR≤10 mA 6 17 6 1.6 0.8 24 mV 2.5 Ω With Current Adjustment Range Circuit of Figure 14 ±1 Reverse Dynamic Impedance IR = 1 mA 0.8 Long Term Stability TA=25°C±0.1°C, IR=1 mA, t = 1000 hrs 20 4 Submit Documentation Feedback ±1 20 V ppm Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 LM136-5.0, LM236-5.0, LM336-5.0 www.ti.com SNVS750D – JUNE 1999 – REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS Reverse Voltage Change Zener Noise Voltage Figure 7. Figure 8. Dynamic Impedance Response Time Figure 9. Figure 10. Reverse Characteristics Temperature Drift Figure 11. Figure 12. Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 Submit Documentation Feedback 5 LM136-5.0, LM236-5.0, LM336-5.0 SNVS750D – JUNE 1999 – REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Forward Characteristics Figure 13. 6 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 LM136-5.0, LM236-5.0, LM336-5.0 www.ti.com SNVS750D – JUNE 1999 – REVISED MARCH 2013 APPLICATION HINTS The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 14 shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in Figure 15. When the device is adjusted to 5.00V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0. It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The absolute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical. Figure 14. LM136-5.0 with Pot for Adjustment of Breakdown Voltage (Trim Range = ±1.0V Typical) Figure 15. Temperature Coefficient Adjustment (Trim Range = ±0.5V Typical) Typical Applications * Adjust for 6.25V across R1 Figure 16. Precision Power Regulator with Low Temperature Coefficient Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 Submit Documentation Feedback 7 LM136-5.0, LM236-5.0, LM336-5.0 SNVS750D – JUNE 1999 – REVISED MARCH 2013 8 www.ti.com Figure 17. 5V Crowbar Figure 18. Adjustable Shunt Regulator Figure 19. Linear Ohmmeter Figure 20. Op Amp with Output Clamped Figure 21. Bipolar Output Reference Figure 22. 5.0V Square Wave Calibrator Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 LM136-5.0, LM236-5.0, LM336-5.0 www.ti.com SNVS750D – JUNE 1999 – REVISED MARCH 2013 Figure 23. 10V Buffered Reference Figure 24. Low Noise Buffered Reference Figure 25. Wide Input Range Reference Schematic Diagram Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 Submit Documentation Feedback 9 LM136-5.0, LM236-5.0, LM336-5.0 SNVS750D – JUNE 1999 – REVISED MARCH 2013 www.ti.com REVISION HISTORY Changes from Revision C (March 2013) to Revision D • 10 Page Changed layout of National Data Sheet to TI format ............................................................................................................ 9 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM136-5.0 LM236-5.0 LM336-5.0 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LM136AH-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -40 to 125 LM136AH5.0 LM136AH-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -40 to 125 LM136AH5.0 LM136H-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 LM136H5.0 LM136H-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM136H5.0 LM236AH-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 LM236AH5.0 LM236AH-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM236AH5.0 LM236H-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -25 to 85 LM236H5.0 LM236H-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -25 to 85 LM236H5.0 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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