2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10A Features • • • • • • • • • 100 Volts 57 Amps 25 mΩ MOSKEYTM - Mosfet and Schottky in a single package Ultra Low On-Resistance 175°C Operating Temperature Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request (MSAER57N10AR) Available with TX/TXV-level screening (MSAER57N10AV) or S-level screening (MSAER57N10AS) i.a.w. Microsemi internal procedure, PS11.50 N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY Maximum Ratings @ 25°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C Continuous Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode Tj= 25°C Tj= 100°C SYMBOL MAX. UNIT BVDSS 100 Volts VGS ID25 ID100 IDM IAR EAR EAS dv/dt +/-20 57 40 180 28 15 200 5.0 Volts Amps Amps Amps mJ mJ V/ns PD Tj Tstg IS ISM θJC 215 -55 to +175 -55 to +175 57 360 0.7 Watts °C °C Amps Amps °C/W @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation @ TC = 100°C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case DRAIN Mechanical Outline CoolPackTM1 GATE SOURCE Revision 1 Note: Pin-out shown for standard polarity MSAER57N10A Electrical Parameters @ 25°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Gate Threshold Voltage Gate-to-Source Leakage Current SYMBOL BVDSS VGS(th) IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) Forward Transconductance (1) IDSS RDS(on) gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD CONDITIONS VGS = 0 V, ID = 250 µA MIN 100 VDS = VGS, ID = 250 uA VGS = ± 20VDC, VDS = 0 TJ = 25°C TJ = 125°C VDS = 100 V, VGS = 0 V,TJ = 25°C VDS = 80 V, VGS = 0 V, TJ = 125°C VGS= 10V, ID= 28 A 2.0 VDS ≥ 15 V; ID = 28 A 20 0.022 VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 50 V, ID = 28 A, RG = 2.5 Ω VGS = 10 V, VDS = 80V, ID = 28A IS = 28A, VGS = 0 V Body Diode typical Forward Voltage 0.9 0.85 VSD (V) 0.8 Tj=25C 0.75 0.7 0.65 0.6 0.55 0.5 0 10 20 30 ISD (A) Notes (1) (2) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. Revision 1 40 50 TYP. 60 MAX UNIT V 4.0 V nA ±100 ±200 25 15 0.025 µA mA Ω - S 3100 1150 300 14 59 58 48 115 10 66 0.8 pF ns nC 0.87 V