Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 12 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 12 mA Active – 13 µA Standby VPP Pin for Write Protection WP Pin for Sector Protection RESET Input for Device Initialization Flexible Sector Protection TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) 32-megabit (2M x 16) 3-volt Only Flash Memory AT49BV320C AT49BV320CT Description The AT49BV320C(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. Pin Configurations Pin Name Function A0 - A20 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset VPP Write Protection I/O0 - I/O15 Data Inputs/Outputs NC No Connect VCCQ Output Power Supply WP Write Protect Rev. 3372D–FLASH–5/04 1 TSOP Top View Type 1 A15 A14 A13 A12 A11 A10 A9 A8 NC A20 WE RESET VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 CBGA Top View 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 1 2 3 4 5 6 7 8 A13 A11 A8 VPP WP A19 A7 A4 A14 A10 WE RST A18 A17 A5 A2 A15 A12 A9 A20 A6 A3 A1 A16 I/O14 I/O5 I/O11 I/O2 I/O8 CE A0 VCCQ I/O15 I/O6 I/O12 I/O3 I/O9 I/O0 GND I/O7 I/O13 I/O4 VCC I/O10 I/O1 OE A B C D E F GND The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see Flexible Sector Protection section). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.5V or above, normal program and erase operations can be performed. 2 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Block Diagram I/O0 - I/O15 INPUT BUFFER INPUT BUFFER IDENTIFIER REGISTER STATUS REGISTER DATA REGISTER A0 - A20 OUTPUT MULTIPLEXER OUTPUT BUFFER CE WE OE RESET WP COMMAND REGISTER ADDRESS LATCH DATA COMPARATOR Y-DECODER Y-GATING WRITE STATE MACHINE PROGRAM/ERASE VOLTAGE SWITCH VPP VCC GND X-DECODER MAIN MEMORY 3 3372D–FLASH–5/04 Device Operation READ: When the AT49BV320C(T) is in the read mode, with CE and OE low and WE high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on, it will be in the read mode. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition” table on page 15 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address and data are latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET pin, the device returns to the read mode, depending upon the state of the control inputs. ERASURE: Before a word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The individual sectors can be erased by using the Sector Erase command. SECTOR ERASE: The device is organized into 71 sectors (SA0 - SA70) that can be individually erased. The Sector Erase command is a two-bus cycle operation. The sector address and the D0H Data Input command are latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the second cycle provided the given sector has not been protected. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. An attempt to erase a sector that has been protected will result in the operation terminating immediately. WORD PROGRAMMING: Once a memory sector is erased, it is programmed (to a logical “0”) on a word-by-word basis. Programming is accomplished via the Internal Device command register and is a two-bus cycle operation. The device will automatically generate the required internal program pulses. Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. If the program status bit is a “1”, the device was not able to verify that the program operation was performed successfully. The status register indicates the programming status. While the program sequence executes, status bit I/O7 is “0”. While programming, the only valid commands are Read Status Register, Program Suspend and Program Resume. VPP PIN: The circuitry of the AT49BV320C(T) is designed so that the device cannot be programmed or erased if the VPP voltage is less that 0.4V. When VPP is at 1.5V or above, normal program and erase operations can be performed. The VPP pin cannot be left floating. READ STATUS REGISTER: The status register indicates the status of device operations and the success/failure of that operation. The Read Status Register command causes subsequent reads to output data from the status register until another command is issued. To return to reading from the memory, issue a Read command. The status register bits are output on I/O7 - I/O0. The upper byte, I/O15 - I/O8, outputs 00H when a Read Status Register command is issued. 4 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) The contents of the status register [SR7:SR0] are latched on the falling edge of OE or CE (whichever occurs last), which prevents possible bus errors that might occur if status register contents change while being read. CE or OE must be toggled with each subsequent status read, or the status register will not indicate completion of a Program or Erase operation. When the Write State Machine (WSM) is active, SR7 will indicate the status of the WSM; the remaining bits in the status register indicate whether the WSM was successful in performing the preferred operation (see Table 1). Table 1. Status Register Bit Definition WSMS ESS ES PS VPPS PSS SLS R 7 6 5 4 3 2 1 0 Notes SR7 WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy Check Write State Machine bit first to determine Word Program or Sector Erase completion, before checking program or erase status bits. SR6 = ERASE SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase In Progress/Completed When Erase Suspend is issued, WSM halts execution and sets both WSMS and ESS bits to “1” – ESS bit remains set to “1” until an Erase Resume command is issued. SR5 = ERASE STATUS (ES) 1 = Error in Sector Erase 0 = Successful Sector Erase When this bit is set to “1”, WSM has applied the max number of erase pulses to the sector and is still unable to verify successful sector erasure. SR4 = PROGRAM STATUS (PS) 1 = Error in Programming 0 = Successful Programming When this bit is set to “1”, WSM has attempted but failed to program a word SR3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK The VPP status bit does not provide continuous indication of VPP level. The WSM interrogates VPP level only after the Program or Erase command sequences have been entered and informs the system if VPP has not been switched on. The VPP is also checked before the operation is verified by the WSM. SR2 = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed When Program Suspend is issued, WSM halts execution and sets both WSMS and PSS bits to “1”. PSS bit remains set to “1” until a Program Resume command is issued. SR1 = SECTOR LOCK STATUS 1 = Prog/Erase attempted on a locked sector; Operation aborted. 0 = No operation to locked sectors If a Program or Erase operation is attempted to one of the locked sectors, this bit is set by the WSM. The operation specified is aborted and the device is returned to read status mode. SR0 = RESERVED FOR FUTURE ENHANCEMENTS (R) This bit is reserved for future use and should be masked out when polling the status register. Note: 1. A Command Sequence Error is indicated when SR1, SR3, SR4 and SR5 are set. 5 3372D–FLASH–5/04 CLEAR STATUS REGISTER: The WSM can set status register bits 1 through 7 and can clear bits 2, 6 and 7; but, the WSM cannot clear status register bits 1, 3, 4 or 5. Because bits 1, 3, 4 and 5 indicate various error conditions, these bits can be cleared only through the Clear Status Register command. By allowing the system software to control the resetting of these bits, several operations may be performed (such as cumulatively programming several addresses or erasing multiple sectors in sequence) before reading the status register to determine if an error occurred during those operations. The status register should be cleared before beginning another operation. The Read command must be issued before data can be read from the memory array. The status register can also be cleared by resetting the device. FLEXIBLE SECTOR PROTECTION: The AT49BV320C(T) offers two sector protection modes, the Softlock and the Hardlock. The Softlock mode is optimized as sector protection for sectors whose content changes frequently. The Hardlock protection mode is recommended for sectors whose content changes infrequently. Once either of these two modes is enabled, the contents of the selected sector is read-only and cannot be erased or programmed. Each sector can be independently programmed for either the Softlock or Hardlock sector protection mode. At power-up and reset, all sectors have their Softlock protection mode enabled. SOFTLOCK AND UNLOCK: The Softlock protection mode can be disabled by issuing a twobus cycle Unlock command to the selected sector. Once a sector is unlocked, its contents can be erased or programmed. To enable the Softlock protection mode, a two-bus cycle Softlock command must be issued to the selected sector. HARDLOCK AND WRITE PROTECT: The Hardlock sector protection mode operates in conjunction with the Write Protect (WP) pin. The Hardlock sector protection mode can be enabled by issuing a two-bus cycle Hardlock Software command to the selected sector. The state of the Write Protect pin affects whether the Hardlock protection mode can be overridden. • When the WP pin is low and the Hardlock protection mode is enabled, the sector cannot be unlocked and the contents of the sector is read-only. • When the WP pin is high, the Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command. To disable the Hardlock sector protection mode, the chip must be either reset or power cycled. 6 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Table 2. Hardlock and Softlock Protection Configurations in Conjunction with WP WP Hardlock Softlock Erase/ Prog Allowed? VCC/5V 0 0 0 Yes No sector is locked VCC/5V 0 0 1 No Sector is Softlocked. The Unlock command can unlock the sector. VCC/5V 0 1 1 No Hardlock protection mode is enabled. The sector cannot be unlocked. VCC/5V 1 0 0 Yes No sector is locked. VCC/5V 1 0 1 No Sector is Softlocked. The Unlock command can unlock the sector. VCC/5V 1 1 0 Yes Hardlock protection mode is overridden and the sector is not locked. VCC/5V 1 1 1 No Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command. VIL x x x No Erase and Program Operations cannot be performed. VPP Comments Figure 1. Sector Locking State Diagram UNLOCKED LOCKED 60h/ D0h 60h/01h [000] [001] 60 h/2 Fh Power-Up/Reset Default 60h/ 2Fh WP = VIL = 0 [011] 60h/D0h [110] 60h/ 01h 60h/ D0h [100] Hardlocked is disabled by WP = VIH [111] 60h/ 2Fh WP = VIH = 1 Hardlocked 60h/ 2Fh Power-Up/Reset Default 60h/ 01h [101] 60h/D0h = Unlock Command 60h/01h = Softlock Command 60h/2Fh = Hardlock Command Notes: 1. The notation [X, Y, Z] denotes the locking state of a sector. The current locking state of a sector is defined by the state of WP and the two bits of the sector-lock status D[1:0]. 7 3372D–FLASH–5/04 SECTOR PROTECTION DETECTION: A software method is available to determine if the sector protection Softlock or Hardlock features are enabled. When the device is in the software product identification mode, a read from the I/O0 and I/O1 at address location 00002H within a sector will show if the sector is unlocked, softlocked, or hardlocked. Table 3. Sector Protection Status I/O1 I/O0 Sector Protection Status 0 0 Sector Not Locked 0 1 Softlock Enabled 1 0 Hardlock Enabled 1 1 Both Hardlock and Softlock Enabled ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to interrupt a sector erase operation and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The only valid commands while erase is suspended are Read Status Register, Product ID Entry, CFI Query, Program, Program Resume, Erase Resume, Sector Softlock/Hardlock, Sector Unlock. PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. After the Program Suspend command is given, the device requires a maximum of 20 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same and the command sequence for the erase resume and program resume are the same. The only other valid commands while program is suspended are Read Status Register, Product ID Entry, CFI Query and Program Resume. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by a software operation. For details, see “Operating Modes” on page 21. 128-BIT PROTECTION REGISTER: The AT49BV320C(T) contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64bit sectors. The two sectors are designated as sector A and sector B. The data in sector A is non-changeable and is programmed at the factory with a unique number. The data in sector B is programmed by the user and can be locked out such that data in the sector cannot be reprogrammed. To program sector B in the protection register, the two-bus cycle Program Protection Register command must be used as shown in the “Command Definition” table on page 15. To lock out sector B, the two-bus cycle Lock Protection Register command must be used as shown in the “Command Definition” table. Data bit D1 must be zero during the second bus cycle. All other data bits during the second bus cycle are don’t cares. To determine whether sector B is locked out, use the status of sector B protection command. If data bit D1 is zero, sector B is locked. If data bit D1 is one, sector B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 16 for the address locations in the protection 8 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether sector B is protected or not, or reading the protection register, the Read command must be given to return to the read mode. CFI: Common Flash Interface (CFI) is a published, standardized data structure that may be read from a flash device. CFI allows system software to query the installed device to determine the configurations, various electrical and timing parameters and functions supported by the device. CFI is used to allow the system to learn how to interface to the flash device most optimally. The two primary benefits of using CFI are ease of upgrading and second source availability. The command to enter the CFI Query mode is a one-bus cycle command which requires writing data 98h to any address. The CFI Query command can be written when the device is ready to read data or can also be written when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI data at the addresses given in Table 4 on page 27. To return to the read mode, issue the Read command. HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against inadvertent programs to the AT49BV320C(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Program inhibit: VPP is less than VILPP. (e) VPP power-on delay: once VPP has reached 0.9V, program and erase operations are inhibited for 100 ns. INPUT LEVELS: While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCCQ + 0.6V. OUTPUT LEVELS: For the AT49BV320C(T), output high levels (VOH) are equal to VCCQ - 0.1V (not VCC). For 2.65V - 3.6V output levels, VCCQ must be tied to VCC. For 1.8V - 2.2V output levels, VCCQ must be regulated to 2.0V ± 10%, while VCC must be regulated to 2.65V - 3.0V (for minimum power). 9 3372D–FLASH–5/04 Word Program Flowchart Word Program Procedure Bus Operation Start Write 40, Word Address (Setup) Write Data, Word Address (Confirm) Program Suspend Loop Read Status Register Command Write Program Setup Data = 40 Addr = Location to program Write Data Data = Data to program Addr = Location to program Read None Status register data: Toggle CE or OE to update status register Idle None Check SR7 1 = WSM Ready 0 = WSM Busy No 0 SR7 = Suspend? Yes 1 Full Status Check (If Desired) Comments Repeat for subsequent Word Program operations. Full status register check can be done after each program, or after a sequence of program operations. Write FF after the last operation to set to the Read state. Program Complete Full Status Check Flowchart Read Status Register SR3 = 1 VP P Range Error Full Status Check Procedure Bus Operation Command Idle None Check SR3: 1 = VPP Error Idle None Check SR4: 1 = Data Program Error Idle None Check SR1: 1 = Sector locked; operation aborted 0 SR4 = 1 Program Error 0 SR1 = 1 Device Protect Error Comments SR3 MUST be cleared before the Write State Machine allows further program attempts. If an error is detected, clear the status register before continuing operations – only the Clear Status Register command clears the status register error bits. 0 Program Successful 10 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Program Suspend/Resume Flowchart Bus Operation Start Write B0 Any Address (Program Suspend) Write 70 Any Address (Read Status) Read Status Register SR7 = Program Suspend/Resume Procedure Command Write Read Status Data = 70 Addr = Any address Write Program Suspend Data = B0 Addr = Any address Read None Status register data: Toggle CE or OE to update status register Addr = Any address Idle None Check SR7 1 = WSM Ready 0 = WSM Busy Idle None Check SR2 1 = Program suspended 0 = Program completed Write Read Array Read None Write Program Resume 0 1 SR2 = 0 Program Completed 1 Write FF Data = FF Addr = Any address Read data from any word in the memory (Read Array) Read Data Done Reading Comments Write FF No Data = D0 Addr = Any address (Read Array) Read Data Yes Write D0 Any Address (Program Resume) Program Resumed 11 3372D–FLASH–5/04 Erase Suspend/Resume Flowchart Bus Operation Start Write B0, Any Address (Erase Suspend) Write 70, Any Address (Read Status) Read Status Register SR7 = Erase Suspend/Resume Procedure 0 Command Write Read Status Data = 70 Addr = Any address Write Erase Suspend Data = B0 Addr = Any address Read None Status register data: Toggle CE or OE to update status register Addr = Any address Idle None Check SR7 1 = WSM Ready 0 = WSM Busy Idle None Check SR6 1 = Erase suspended 0 = Erase completed Write Read or Program Read or Write None Write Program Resume 1 SR6 = 0 Erase Completed 1 Write FF (Read Array) Read Data Done Reading 0 1 (Erase Resume) 12 Write D0, Any Address Write FF Erase Resumed Read Array Data Comments Data = FF or 40 Addr = Any address Read or program data from/to sector other than the one being erased Data = D0 Addr = Any address (Read Array) AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Sector Erase Procedure Sector Erase Flowchart Bus Operation Start Write 20, Sector Address Suspend Erase Loop Read Status Register Comments Write Sector Erase Setup Data = 20 Addr = Sector to be erased (SA) Write Erase Confirm Data = D0 Addr = Sector to be erased (SA) Read None Status register data: Toggle CE or OE to update status register data Idle None Check SR7 1 = WSM Ready 0 = WSM Busy (Sector Erase) Write D0, (Erase Confirm) Sector Address Command No Suspend Erase 0 SR7 = Yes 1 Full Erase Status Check (If Desired) Repeat for subsequent sector erasures. Full status register check can be done after each sector erase, or after a sequence of sector erasures. Write FF after the last operation to enter read mode. Sector Erase Complete Full Erase Status Check Flowchart Read Status Register SR3 = 1 VP P Range Error Full Erase Status Check Procedure Bus Operation Command Idle None Check SR3: 1 = VPP Range Error Idle None Check SR4, SR5: Both 1 = Command Sequence Error Idle None Check SR5: 1 = Sector Erase Error Idle None Check SR1: 1 = Attempted erase of locked sector; erase aborted. Comments 0 SR4, SR5 = 1,1 Command Sequence Error 0 SR5 = 1 Sector Erase Error 1 Sector Locked Error 0 SR1 = 0 Sector Erase Successful SR1, SR3 must be cleared before the Write State Machine allows further erase attempts. Only the Clear Status Register command clears SR1, SR3, SR4, SR5. If an error is detected, clear the status register before attempting an erase retry or other error recovery. 13 3372D–FLASH–5/04 Protection Register Programming Flowchart Protection Register Programming Procedure Bus Operation Command Comments Start Write C0, PR Address Write PR Address & Data (Confirm Data) Full Status Check (If Desired) Program Complete Full Status Check Flowchart Read Status Register Data 1 Protection Program Data = Data to Program Addr = Location to Program Read None Status register data: Toggle CE or OE to update status register data Idle None Check SR7 1 = WSM Ready 0 = WSM Busy Full Status Check Procedure Bus Operation Command Idle None Check SR1, SR3, SR4: 0,1,1 = VPP Range Error Idle None Check SR1, SR3, SR4: 0,0,1 = Programming Error Idle None Check SR1, SR3, SR4: 1, 0,1 = Sector locked; operation aborted VP P Range Error 0 1 Program Error 1 Register Locked; Program Aborted 0 0 Program Successful 14 Write Program Protection Register operation addresses must be within the protection register address space. Addresses outside this space will return an error. Repeat for subsequent programming operations. Full status register check can be done after each program, or after a sequence of program operations. Write FF after the last operation to return to the Read mode. 1 SR3, SR4 = Data = C0 Addr = First Location to Program 0 SR7 = SR3, SR4 = Program PR Setup (Program Setup) Read Status Register SR3, SR4 = Write Comments SR3 must be cleared before the Write State Machine allows further program attempts. Only the Clear Status Register command clears SR1, SR3, SR4. If an error is detected, clear the status register before attempting a program retry or other error recovery. AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Command Definition in Hex(1) Command Sequence 1st Bus Cycle 2nd Bus Cycle Bus Cycles Addr Data Read 1 XX FF Sector Erase/Confirm 2 XX Word Program 2 XX Addr Data 20 SA(2) D0 40/10 Addr DIN 01 Erase/Program Suspend 1 XX B0 Erase/Program Resume 1 XX D0 Product ID Entry 1 XX 90 Sector Softlock 2 XX 60 SA(2) (2) 2F Sector Hardlock 2 XX 60 SA Sector Unlock 2 XX 60 SA(2) D0 Read Status Register 2 XX 70 XX DOUT(3) Clear Status Register 1 XX 50 Program Protection Register 2 XX C0 Addr DIN Lock Protection Register – Sector B 2 XX C0 80 FFFD Status of Sector B Protection 2 XX 90 80 DOUT(4) CFI Query 1 XX 98 Notes: 1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). I/O15 - I/O8 are don’t care. The ADDRESS FORMAT shown for each bus cycle is as follows: A7 - A0 (Hex). Address A20 through A8 are don’t care. 2. SA = sector address. Any word address within a sector can be used to designate the sector address (see pages 17 and 18 for details). 3. The status register bits are output on I/O7 - I/O0. 4. If data bit D1 is “0”, sector B is locked. If data bit D1 is “1”, sector B can be reprogrammed. Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage on VPP with Respect to Ground ...................................-0.6V to +13.0V 15 3372D–FLASH–5/04 Protection Register Addressing Table Word Use Sector A7 A6 A5 A4 A3 A2 A1 A0 0 Factory A 1 0 0 0 0 0 0 1 1 Factory A 1 0 0 0 0 0 1 0 2 Factory A 1 0 0 0 0 0 1 1 3 Factory A 1 0 0 0 0 1 0 0 4 User B 1 0 0 0 0 1 0 1 5 User B 1 0 0 0 0 1 1 0 6 User B 1 0 0 0 0 1 1 1 User B 1 0 0 0 1 0 0 0 7 Note: 16 All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A20 - A8 = 0. AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) AT49BV320C – Sector Address Table Sector Size (Bytes/Words) Address Range (A20 - A0) SA0 8K/4K 00000 - 00FFF SA1 8K/4K 01000 - 01FFF SA2 8K/4K 02000 - 02FFF SA3 8K/4K 03000 - 03FFF SA4 8K/4K 04000 - 04FFF SA5 8K/4K 05000 - 05FFF SA6 8K/4K 06000 - 06FFF SA7 8K/4K 07000 - 07FFF SA8 64K/32K 08000 - 0FFFF SA9 64K/32K 10000 - 17FFF SA10 64K/32K 18000 - 1FFFF SA11 64K/32K 20000 - 27FFF SA12 64K/32K 28000 - 2FFFF SA13 64K/32K 30000 - 37FFF SA14 64K/32K 38000 - 3FFFF SA15 64K/32K 40000 - 47FFF SA16 64K/32K 48000 - 4FFFF SA17 64K/32K 50000 - 57FFF SA18 64K/32K 58000 - 5FFFF SA19 64K/32K 60000 - 67FFF SA20 64K/32K 68000 - 6FFFF SA21 64K/32K 70000 - 77FFF SA22 64K/32K 78000 - 7FFFF SA23 64K/32K 80000 - 87FFF SA24 64K/32K 88000 - 8FFFF SA25 64K/32K 90000 - 97FFF SA26 64K/32K 98000 - 9FFFF SA27 64K/32K A0000 - A7FFF SA28 64K/32K A8000 - AFFFF SA29 64K/32K B0000 - B7FFF SA30 64K/32K B8000 - BFFFF SA31 64K/32K C0000 - C7FFF SA32 64K/32K C8000 - CFFFF SA33 64K/32K D0000 - D7FFF SA34 64K/32K D8000 - DFFFF SA35 64K/32K E0000 - E7FFF SA36 64K/32K E8000 - EFFFF SA37 64K/32K F0000 - F7FFF 17 3372D–FLASH–5/04 AT49BV320C – Sector Address Table (Continued) Sector Size (Bytes/Words) Address Range (A20 - A0) SA38 64K/32K F8000 - FFFFF SA39 64K/32K 100000 - 107FFF SA40 64K/32K 108000 - 10FFFF SA41 64K/32K 110000 - 117FFF SA42 64K/32K 118000 - 11FFFF SA43 64K/32K 120000 - 127FFF SA44 64K/32K 128000 - 12FFFF SA45 64K/32K 130000 - 137FFF SA46 64K/32K 138000 - 13FFFF SA47 64K/32K 140000 - 147FFF SA48 64K/32K 148000 - 14FFFF SA49 64K/32K 150000 - 157FFF SA50 64K/32K 158000 - 15FFFF SA51 64K/32K 160000 - 167FFF SA52 64K/32K 168000 - 16FFFF SA53 64K/32K 170000 - 177FFF SA54 64K/32K 178000 - 17FFFF SA55 64K/32K 180000 - 187FFF SA56 64K/32K 188000 - 18FFFF SA57 64K/32K 190000 - 197FFF SA58 64K/32K 198000 - 19FFFF SA59 64K/32K 1A0000 - 1A7FFF SA60 64K/32K 1A8000 - 1AFFFF SA61 64K/32K 1B0000 - 1B7FFF SA62 64K/32K 1B8000 - 1BFFFF SA63 64K/32K 1C0000 - 1C7FFF SA64 64K/32K 1C8000 - 1CFFFF SA65 64K/32K 1D0000 - 1D7FFF SA66 64K/32K 1D8000 - 1DFFFF SA67 64K/32K 1E0000 - 1E7FFF SA68 64K/32K 1E8000 - 1EFFFF SA69 64K/32K 1F0000 -1F7FFF SA70 64K/32K 1F8000 - 1FFFF 18 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) AT49BV320CT – Sector Address Table Sector Size (Bytes/Words) Address Range (A20 - A0) SA0 64K/32K 00000 - 07FFF SA1 64K/32K 08000 - 0FFFF SA2 64K/32K 10000 - 17FFF SA3 64K/32K 18000 - 1FFFF SA4 64K/32K 20000 - 27FFF SA5 64K/32K 28000 - 2FFFF SA6 64K/32K 30000 - 37FFF SA7 64K/32K 38000 - 3FFFF SA8 64K/32K 40000 - 47FFF SA9 64K/32K 48000 - 4FFFF SA10 64K/32K 50000 - 57FFF SA11 64K/32K 58000 - 5FFFF SA12 64K/32K 60000 - 67FFF SA13 64K/32K 68000 - 6FFFF SA14 64K/32K 70000 - 77FFF SA15 64K/32K 78000 - 7FFFF SA16 64K/32K 80000 - 87FFF SA17 64K/32K 88000 - 8FFFF SA18 64K/32K 90000 - 97FFF SA19 64K/32K 98000 - 9FFFF SA20 64K/32K A0000 - A7FFF SA21 64K/32K A8000 - AFFFF SA22 64K/32K B0000 - B7FFF SA23 64K/32K B8000 - BFFFF SA24 64K/32K C0000 - C7FFF SA25 64K/32K C8000 - CFFFF SA26 64K/32K D0000 - D7FFF SA27 64K/32K D8000 - DFFFF SA28 64K/32K E0000 - E7FFF SA29 64K/32K E8000 - EFFFF SA30 64K/32K F0000 - F7FFF SA31 64K/32K F8000 - FFFFF SA32 64K/32K 100000 - 107FFF SA33 64K/32K 108000 - 10FFFF SA34 64K/32K 110000 - 117FFF SA35 64K/32K 118000 - 11FFFF SA36 64K/32K 120000 - 127FFF SA37 64K/32K 128000 - 12FFFF 19 3372D–FLASH–5/04 AT49BV320CT – Sector Address Table (Continued) Sector Size (Bytes/Words) Address Range (A20 - A0) SA38 64K/32K 130000 - 137FFF SA39 64K/32K 138000 - 13FFFF SA40 64K/32K 140000 - 147FFF SA41 64K/32K 148000 - 14FFFF SA42 64K/32K 150000 - 157FFF SA43 64K/32K 158000 - 15FFFF SA44 64K/32K 160000 - 167FFF SA45 64K/32K 168000 - 16FFFF SA46 64K/32K 170000 - 177FFF SA47 64K/32K 178000 - 17FFFF SA48 64K/32K 180000 - 187FFF SA49 64K/32K 188000 - 18FFFF SA50 64K/32K 190000 - 197FFF SA51 64K/32K 198000 - 19FFFF SA52 64K/32K 1A0000 - 1A7FFF SA53 64K/32K 1A8000 - 1AFFFF SA54 64K/32K 1B0000 - 1B7FFF SA55 64K/32K 1B8000 - 1BFFFF SA56 64K/32K 1C0000 - 1C7FFF SA57 64K/32K 1C8000 - 1CFFFF SA58 64K/32K 1D0000 - 1D7FFF SA59 64K/32K 1D8000 - 1DFFFF SA60 64K/32K 1E0000 - 1E7FFF SA61 64K/32K 1E8000 - 1EFFFF SA62 64K/32K 1F0000 - 1F7FFF SA63 8K/4K 1F8000 - 1F8FFF SA64 8K/4K 1F9000 - 1F9FFF SA65 8K/4K 1FA000 - 1FAFFF SA66 8K/4K 1FB000 - 1FBFFF SA67 8K/4K 1FC000 - 1FCFFF SA68 8K/4K 1FD000 - 1FDFFF SA69 8K/4K 1FE000 - 1FEFFF SA70 8K/4K 1FF000 - 1FFFFF 20 AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) DC and AC Operating Range AT49BV320C(T)-70 Operating Temperature (Case) Ind. -40°C - 85°C VCC Power Supply 2.65V to 3.6V Operating Modes Mode Read Program/Erase (2) Standby/Program Inhibit CE OE WE RESET VPP Ai I/O VIL VIL VIH VIH X Ai DOUT VIL VIH VIHPP(5) Ai DIN X VIH X X High-Z VIL VIH (1) VIH X X X VIH VIH X X VIL X VIH X X X X VIH VILPP(6) Output Disable X VIH X VIH X Reset X X X VIL X Program Inhibit Product Identification Software Notes: 1. 2. 3. 4. 5. 6. VIH High-Z X High-Z A0 = VIL, A1 - A20 = VIL Manufacturer Code(4) A0 = VIH, A1 - A20 = VIL Device Code(4) X can be VIL or VIH. Refer to AC programming waveforms on page 26. VH = 12.0V ± 0.5V. Manufacturer Code: 001FH, Device Code: 88C5H – AT49BV320C; 88C4H – AT49BV320CT VIHPP (min) = 0.9V; VIHPP (max) = 1.95V. VILPP (max) = 0.4V. 21 3372D–FLASH–5/04 DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO ISB ICC (1) Min Typ Max Units VIN = 0V to VCC 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA VCC Standby Current CMOS CE = VCC - 0.3V to VCC 13 25 µA VCC Active Read Current f = 5 MHz; IOUT = 0 mA 12 25 mA ICC1 VCC Programming Current 45 mA IPP1 VPP Input Load Current 10 µA VIL Input Low Voltage 0.4 V VIH Input High Voltage VOL Output Low Voltage IOL = 100 µA VOH Output High Voltage IOH = -100 µA Note: 22 VCCQ - 0.2 V 0.10 VCCQ - 0.1 V V 1. In the erase mode, ICC is 65 mA. AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) AC Read Characteristics AT49BV320C(T)-70 Symbol Parameter tRC Read Cycle Time tACC Address to Output Delay 70 ns tCE(1) CE to Output Delay 70 ns (2) OE to Output Delay 0 20 ns (3)(4) CE or OE to Output Float 0 25 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tRO RESET to Output Delay tOE tDF Min Max 70 Units ns ns 100 ns AC Read Waveforms(1)(2)(3)(4) tRC ADDRESS ADDRESS VALID CE tCE tOE OE tDF tOH tACC tRO RESET OUTPUT Notes: HIGH Z OUTPUT VALID 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 23 3372D–FLASH–5/04 Input Test Waveforms and Measurement Level VCC VCC/2 0V tR, tF < 5 ns Output Test Load VCCQ 15 15 Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol CIN COUT Note: 24 Typ Max Units Conditions 4 6 pF VIN = 0V 8 12 pF VOUT = 0V This parameter is characterized and is not 100% tested. AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) AC Word Load Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Setup Time 45 ns tAH Address Hold Time 0 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 40 ns tDS Data Setup Time 45 ns tDH, tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 30 ns AC Word Load Waveforms WE Controlled CE Controlled 25 3372D–FLASH–5/04 Program Cycle Characteristics Symbol Parameter Min Typ Max Units tBP Word Programming Time tAS Address Setup Time 45 12 120 µs ns tAH Address Hold Time 0 ns tDS Data Setup Time 45 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 40 ns tWPH Write Pulse Width High 30 ns tWC Write Cycle Time 70 ns tRP Reset Pulse Width 500 tSEC1 Sector Erase Cycle Time (4K Word Sectors) 0.3 3.0 seconds tSEC2 Sector Erase Cycle Time (32K Word Sectors) 0.8 6.0 seconds tES Erase Suspend Time 15 µs tPS Program Suspend Time 20 µs ns Program Cycle Waveforms PROGRAM CYCLE OE CE tBP tWP WE tWPH tDH tAS A0 - A20 XX tAH (1) ADDRESS tWC DATA tDS INPUT DATA Note 3 Sector Erase Cycle Waveforms OE (2) CE tWP tWPH WE tDH tAS A0-A20 tAH (1) XX SA tWC DATA Notes: 26 1. 2. 3. 4. (4) tDS tEC 20 D0 WORD 0 WORD 1 Any address can be used to load the data. OE must be high only when WE and CE are both low. The data can be 40H or 10H. The address depends on what sector is to be erased. AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) Table 4. Common Flash Interface Definition Address AT49BV320CT AT49BV320C 10h 0051h 0051h “Q” 11h 0052h 0052h “R” 12h 0059h 0059h “Y” 13h 0003h 0003h 14h 0000h 0000h 15h 0041h 0041h 16h 0000h 0000h 17h 0000h 0000h 18h 0000h 0000h 19h 0000h 0000h 1Ah 0000h 0000h 1Bh 0027h 0027h VCC min write/erase 1Ch 0036h 0036h VCC max write/erase 1Dh 00B5h 00B5h VPP min voltage 1Eh 00C5h 00C5h VPP max voltage 1Fh 0004h 0004h Typ word write – 12 µs 20h 0000h 0000h 21h 000Ah 000Ah Typ sector erase, 1,000 ms 22h 0000h 0000h Typ chip erase, not supported 23h 0003h 0003h Max word write/typ time 24h 0000h 0000h n/a 25h 0003h 0003h Max sector erase/typ sector erase 26h 0000h 0000h Max chip erase/ typ chip erase 27h 0016h 0016h Device size 28h 0001h 0001h x16 device 29h 0000h 0000h x16 device 2Ah 0000h 0000h Multiple byte write not supported 2Bh 0000h 0000h Multiple byte write not supported 2Ch 0002h 0002h 2 regions, x = 2 2Dh 003Eh 0007h 64K bytes, Y = 62 (Top); 8K bytes, Y = 7 (Bottom) 2Eh 0000h 0000h 64K bytes, Y = 62 (Top); 8K bytes, Y = 7 (Bottom) 2Fh 0000h 0020h 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom) 30h 0001h 0000h 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom) 31h 0007h 003Eh 8K bytes, Y = 7 (Top); 64K bytes, Y = 62 (Bottom) 32h 0000h 0000h 8K bytes, Y = 7 (Top); 64K bytes, Y = 62 (Bottom) 33h 0020h 0000h 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom) 34h 0000h 0001h 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom) 27 3372D–FLASH–5/04 Table 4. Common Flash Interface Definition (Continued) Address AT49BV320CT AT49BV320C VENDOR SPECIFIC EXTENDED QUERY 28 41h 0050h 0050h “P” 42h 0052h 0052h “R” 43h 0049h 0049h “I” 44h 0031h 0031h Major version number, ASCII 45h 0030h 0030h Minor version number, ASCII 46h 0086h 0086h Bit 0 – chip erase supported, 0 – no, 1 – yes Bit 1 – erase suspend supported, 0 – no, 1 – yes Bit 2 – program suspend supported, 0 – no, 1 – yes Bit 3 – simultaneous operations supported, 0 – no, 1 – yes Bit 4 – burst mode read supported, 0 – no, 1 – yes Bit 5 – page mode read supported, 0 – no, 1 – yes Bit 6 – queued erase supported, 0 – no, 1 – yes Bit 7 – protection bits supported, 0 – no, 1 – yes 47h 0000h 0001h Bit 8 – top (“0”) or bottom (“1”) boot sector device undefined bits are “0” 48h 0000h 0000h Bit 0 – 4 word linear burst with wrap around, 0 – no, 1 – yes Bit 1 – 8 word linear burst with wrap around, 0 – no, 1 – yes Bit 2 – continuos burst, 0 - no, 1 - yes Undefined bits are “0” 49h 0000h 0000h Bit 0 – 4 word page, 0 – no, 1 – yes Bit 1 – 8 word page, 0 – no, 1 – yes Undefined bits are “0” 4Ah 0080h 0080h Location of protection register lock byte, the section’s first byte 4Bh 0003h 0003h # of bytes in the factory prog section of prot register – 2*n 4Ch 0003h 0003h # of bytes in the user prog section of prot register – 2*n AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) AT49BV320C(T) Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package Operation Range 70 25 0.025 AT49BV320C-70CI AT49BV320C-70TI 47C1 48T Industrial (-40° to 85° C) 70 25 0.025 AT49BV320CT-70CI AT49BV320CT-70TI 47C1 48T Industrial (-40° to 85° C) Package Type 47C1 47-ball, Plastic Chip-Size Ball Grid Array Package (CBGA) 48T 48-lead, Plastic Thin Small Outline Package (TSOP) 29 3372D–FLASH–5/04 Packaging Information 47C1 – CBGA E A1 BALL ID D TOP VIEW A1 A E1 0.875 REF SIDE VIEW e A1 BALL CORNER 3.125 REF COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX A E 6.90 7.00 7.10 B E1 C D D1 D 5.25 TYP 9.90 D1 10.00 10.10 3.75 TYP E A – – 1.00 F A1 0.22 – – 8 7 6 5 4 3 2 NOTE e 0.75 BSC b 0.35 TYP 1 b BOTTOM VIEW 7/2/03 R 30 2325 Orchard Parkway San Jose, CA 95131 TITLE 47C1, 47-ball (8 x 6 Array), 0.75 mm Pitch, 7.0 x 10.0 x 1.0 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 47C1 REV. A AT49BV320C(T) 3372D–FLASH–5/04 AT49BV320C(T) 48T – TSOP PIN 1 0º ~ 8º c Pin 1 Identifier D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.95 1.00 1.05 D 19.80 20.00 20.20 D1 18.30 18.40 18.50 Note 2 E 11.90 12.00 12.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-142, Variation DD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e NOTE 0.50 BASIC 10/18/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. 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