APTDF450U60G Single diode Power Module VCES = 600V IC = 450A @ Tc = 80°C Application Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles Features Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current Benefits Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Max ratings Unit 600 V Tc = 25°C 500 Tc = 80°C 450 850 5000 Tj = 25°C A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF450U60G – Rev 2 October, 2012 Symbol VR VRRM APTDF450U60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 500A IF = 1000A IF = 500A Tj = 150°C Tj = 25°C VR = 600V Tj = 150°C Min Typ 1.4 1.7 Max 1.8 V 1.5 2500 5000 VR = 200V Unit 825 µA pF Dynamic Characteristics Symbol Characteristic trr1 trr2 Reverse Recovery Time trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 dIM/dt Test Conditions IF=1A,VR=30V di/dt = 15A/µs IF = 500A VR = 350V di/dt=1000A/µs Forward Recovery Time Reverse Recovery Current Reverse Recovery Charge IF = 500A VR = 350V di/dt=1000A/µs Forward Recovery Voltage Rate of Fall of Recovery Current Min Typ Max Tj = 25°C 60 75 Tj = 25°C 90 115 Tj = 100°C 135 255 Tj = 25°C 135 Tj = 100°C 135 Tj = 25°C 35 50 Tj = 100°C 55 70 Tj = 25°C 1575 2875 Tj = 100°C 3715 8925 Tj = 25°C 23 Tj = 100°C 23 Tj = 25°C 600 Tj = 100°C 400 Unit ns ns A nC V A/µs Thermal and package characteristics Torque Mounting torque Wt Package Weight Min Typ Max 0.08 4000 To heatsink For terminals www.microsemi.com M5 M6 -40 -40 -40 2.5 3 Unit °C/W V 150 125 100 3.5 4 250 °C N.m g 2-4 APTDF450U60G – Rev 2 October, 2012 Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t =1 min, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature APTDF450U60G www.microsemi.com 3-4 APTDF450U60G – Rev 2 October, 2012 LP4 Package outline (dimensions in mm) APTDF450U60G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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