AO4603 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical. n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -5.8A (VGS = -10V) RDS(ON) RDS(ON) < 55mΩ (VGS=10V) < 35mΩ (VGS = -10V) < 70mΩ (VGS=4.5V) < 58mΩ (VGS = -4.5V) < 110mΩ (VGS = 2.5V) D1 D2 S2 G2 S1 G1 8 7 6 5 1 2 3 4 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±12 ±20 4.7 -5.8 ID 4 -4.9 IDM 30 -40 2 2 1.44 1.44 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -30 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 52 78 48 p-ch p-ch p-ch 50 73 31 Units V V A W °C Max Units 62.5 °C/W 110 °C/W 50 °C/W 62.5 110 35 °C/W °C/W °C/W AO4603 n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V VGS=10V, ID=4A VGS(th) ID(ON) RDS(ON) gFS VSD IS 0.6 Units 1 1 5 µA 100 1.4 nA V 10 A 45 55 55 70 mΩ 110 mΩ 1 S V 2.5 A TJ=125°C VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max V TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 83 8 0.8 mΩ VGS=0V, VDS=15V, f=1MHz 390 54.5 41 pF pF pF VGS=0V, VDS=0V, f=1MHz 3 Ω VGS=4.5V, VDS=15V, ID=4A 0.6 1.38 4.34 nC nC nC 3.3 1 21.7 2.1 12 6.3 ns ns ns ns VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω IF=4A, dI/dt=100A/µs IF=4A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 6 4 125°C 3 2 VGS=2V 0 25°C 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 Normalized On-Resistance 1.8 125 VGS=2.5V RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 100 75 VGS=4.5V 50 25 VGS=10V 0 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 ID=2A 1.0E-01 125°C 100 IS (A) RDS(ON) (mΩ) 150 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 15 20 25 30 TJ(Max)=150°C TA=25°C 15 10µs 100µs 10 20 TJ(Max)=150°C TA=25°C 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.0 ID (Amps) Crss 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4603 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time ±100 nA -2.2 V A 38 40 mΩ mΩ 39 63 -0.75 -1 V -4.2 A VDS=-5V, ID=-10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss -1.8 29 VGS=-10V, ID=-5A µA -5 IGSS gFS Units V VDS=-24V, VGS=0V VSD Max -1 VGS(th) IS Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-7.5A VGS=-10V, VDS=-15V, RL=2Ω, RGEN=3Ω S 920 pF 190 pF 122 pF 3.6 Ω 2.4 nC 4.5 nC 9.3 nC 7.6 ns 5.2 ns 21.6 ns 8 ns trr Body Diode Reverse Recovery Time IF=-7.5A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-7.5A, dI/dt=100A/µs 8.8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any analication a givendepends application on depends the user'son specific the user's board specific design. board The design. current rating The current is based rating on the is based t ≤ 10sonthermal the t ≤ 10s resistance thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel 30 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V -10V -6V -5V 15 -3.5V 10 15 10 5 125°C 5 25°C VGS=-3V 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.6 ID=-6A Normalized On-Resistance 55 VGS=-4.5V 50 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 1.4 VGS=-10V 1.2 VGS=-4.5V 1 15 0.8 10 0 5 10 15 20 0 25 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 90 ID=-6A 1.0E+00 80 1.0E-01 70 125°C 60 50 25°C -IS (A) RDS(ON) (mΩ) 50 125°C 1.0E-02 1.0E-03 1.0E-04 40 25°C 1.0E-05 30 1.0E-06 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel 1500 10 VDS=-15V ID=-6A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 20 25 30 Power (W) 30 1ms 10ms 1s 20 10 10s DC 0.1 0.1 15 TJ(Max)=150°C TA=25°C 10µs 100µs 0.1s 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000