ATMEL AT25DF041A-SH-B

Features
• Single 2.3V - 3.6V or 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture
•
•
•
•
•
•
•
•
•
•
•
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– One 16-Kbyte Top Sector
– Two 8-Kbyte Sectors
– One 32-Kbyte Sector
– Seven 64-Kbyte Sectors
Hardware Controlled Locking of Protected Sectors via WP pin
Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
Fast Program and Erase Times
– 1.2 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 15 µA Deep Power-down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil and 208-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
4-megabit
2.3-volt or
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF041A
1. Description
The AT25DF041A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer-based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF041A, with its erase granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
3668D–DFLASH–9/08
The physical sectoring and the erase block sizes of the AT25DF041A have been optimized to
meet the needs of today’s code and data storage applications. By optimizing the size of the
physical sectors and erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their
own protected sectors, the wasted and unused memory space that occurs with large sectored
and large block erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added while
still maintaining the same overall device density.
The AT25DF041A also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while
keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant
modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DF041A incorporates Global Protect and Global Unprotect features that allow the
entire memory array to be either protected or unprotected all at once. This reduces overhead
during the manufacturing process since sectors do not have to be unprotected one-by-one prior
to initial programming.
Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF041A supports read, program, and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No
separate voltage is required for programming and erasing.
2
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
2. Pin Descriptions and Pinouts
Table 2-1.
Pin Descriptions
Asserted
State
Type
Low
Input
Symbol
Name and Function
CS
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-down mode),
and the SO pin will be in a high-impedance state. When the device is deselected, data will not be
accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition
is required to end an operation. When ending an internally self-timed operation such as a program
or erase cycle, the device will not enter the standby mode until the completion of the operation.
SCK
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is always
latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the
falling edge of SCK.
Input
SI
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK.
Input
SO
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK.
WP
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to
section “Protection Commands and Features” on page 15 for more details on protection features
and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware-controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.
Low
Input
HOLD
HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the
SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an effect
on internally self-timed operations such as a program or erase cycle. Please refer to section “Hold”
on page 30 for additional details on the Hold operation.
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be used.
However, it is recommended that the HOLD pin also be externally connected to VCC whenever
possible.
Low
Input
VCC
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be attempted.
Power
GND
GROUND: The ground reference for the power supply. GND should be connected to the
system ground.
Power
Figure 2-1.
CS
SO
WP
GND
8-SOIC Top View
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
Figure 2-2.
CS
SO
WP
GND
Output
8-UDFN Top View
1
8
2
7
3
6
4
5
VCC
HOLD
SCK
SI
3
3668D–DFLASH–9/08
3. Block Diagram
CONTROL AND
PROTECTION LOGIC
CS
SI
SO
SRAM
DATA BUFFER
INTERFACE
CONTROL
AND
LOGIC
ADDRESS LATCH
SCK
I/O BUFFERS
AND LATCHES
WP
Y-DECODER
Y-GATING
X-DECODER
FLASH
MEMORY
ARRAY
4. Memory Array
To provide the greatest flexibility, the memory array of the AT25DF041A can be erased in four
levels of granularity including a full chip erase. In addition, the array has been divided into physical sectors of various sizes, of which each sector can be individually protected from program
and erase operations. The sizes of the physical sectors are optimized for both code and data
storage applications, allowing both code and data segments to reside in their own isolated
regions. Figure 4-1 on page 5 illustrates the breakdown of each erase level as well as the breakdown of each physical sector.
4
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Memory Architecture Diagram
Block Erase Detail
64KB
32KB
Block Erase
Block Erase
(D8h Command) (52h Command)
16KB
(Sector 10)
32KB
8KB
(Sector 9)
8KB
(Sector 8)
64KB
32KB
(Sector 7)
32KB
32KB
64KB
(Sector 6)
64KB
•••
•••
•••
32KB
32KB
64KB
(Sector 0)
64KB
32KB
4KB
Block Erase
(20h Command)
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
Block Address
Range
07F F F F h –
07E F F F h –
07DF F F h –
07CF F F h –
07BF F F h –
07AF F F h –
079F F F h –
078F F F h –
077F F F h –
076F F F h –
075F F F h –
074F F F h –
073F F F h –
072F F F h –
071F F F h –
070F F F h –
06F F F F h –
06E F F F h –
06DF F F h –
06CF F F h –
06BF F F h –
06AF F F h –
069F F F h –
068F F F h –
067F F F h –
066F F F h –
065F F F h –
064F F F h –
063F F F h –
062F F F h –
061F F F h –
060F F F h –
07F 000h
07E 000h
07D000h
07C000h
07B000h
07A000h
079000h
078000h
077000h
076000h
075000h
074000h
073000h
072000h
071000h
070000h
06F 000h
06E 000h
06D000h
06C000h
06B000h
06A000h
069000h
068000h
067000h
066000h
065000h
064000h
063000h
062000h
061000h
060000h
00F F F F h –
00E F F F h –
00DF F F h –
00CF F F h –
00BF F F h –
00AF F F h –
009F F F h –
008F F F h –
007F F F h –
006F F F h –
005F F F h –
004F F F h –
003F F F h –
002F F F h –
001F F F h –
000F F F h –
00F 000h
00E 000h
00D000h
00C000h
00B000h
00A000h
009000h
008000h
007000h
006000h
005000h
004000h
003000h
002000h
001000h
000000h
•••
Internal Sectoring for
Sector Protection
Function
Page Program Detail
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
1-256 Byte
Page Program
(02h Command)
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
Page Address
Range
07F F F F h –
07F E F F h –
07F DF F h –
07F CF F h –
07F BF F h –
07F AF F h –
07F 9F F h –
07F 8F F h –
07F 7F F h –
07F 6F F h –
07F 5F F h –
07F 4F F h –
07F 3F F h –
07F 2F F h –
07F 1F F h –
07F 0F F h –
07E F F F h –
07E E F F h –
07E DF F h –
07E CF F h –
07E BF F h –
07E AF F h –
07E 9F F h –
07E 8F F h –
07F F 00h
07F E 00h
07F D00h
07F C00h
07F B00h
07F A00h
07F 900h
07F 800h
07F 700h
07F 600h
07F 500h
07F 400h
07F 300h
07F 200h
07F 100h
07F 000h
07E F 00h
07E E 00h
07E D00h
07E C00h
07E B00h
07E A00h
07E 900h
07E 800h
0017F F h
0016F F h
0015F F h
0014F F h
0013F F h
0012F F h
0011F F h
0010F F h
000F F F h
000E F F h
000DF F h
000CF F h
000BF F h
000AF F h
0009F F h
0008F F h
0007F F h
0006F F h
0005F F h
0004F F h
0003F F h
0002F F h
0001F F h
0000F F h
001700h
001600h
001500h
001400h
001300h
001200h
001100h
001000h
000F 00h
000E 00h
000D00h
000C00h
000B00h
000A00h
000900h
000800h
000700h
000600h
000500h
000400h
000300h
000200h
000100h
000000h
•••
Figure 4-1.
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
3668D–DFLASH–9/08
5. Device Operation
The AT25DF041A is controlled by a set of instructions that are sent from a host controller, commonly referred to as the SPI Master. The SPI Master communicates with the AT25DF041A via
the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Clock (SCK), Serial
Input (SI), and Serial Output (SO).
The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode
differing in respect to the SCK polarity and phase and how the polarity and phase control the
flow of data on the SPI bus. The AT25DF041A supports the two most common modes, SPI
modes 0 and 3. The only difference between SPI modes 0 and 3 is the polarity of the SCK signal
when in the inactive state (when the SPI Master is in standby mode and not transferring any
data). With SPI modes 0 and 3, data is always latched in on the rising edge of SCK and always
output on the falling edge of SCK.
Figure 5-1.
SPI Mode 0 and 3
CS
SCK
SI
MSB
SO
LSB
MSB
LSB
6. Commands and Addressing
A valid instruction or operation must always be started by first asserting the CS pin. After the CS
pin has been asserted, the SPI Master must then clock out a valid 8-bit opcode on the SPI bus.
Following the opcode, instruction dependent information such as address and data bytes would
then be clocked out by the SPI Master. All opcode, address, and data bytes are transferred with
the most significant bit (MSB) first. An operation is ended by deasserting the CS pin.
Opcodes not supported by the AT25DF041A will be ignored by the device and no operation will
be started. The device will continue to ignore any data presented on the SI pin until the start of
the next operation (CS pin being deasserted and then reasserted). In addition, if the CS pin is
deasserted before complete opcode and address information is sent to the device, then no operation will be performed and the device will simply return to the idle state and wait for the next
operation.
Addressing of the device requires a total of three bytes of information to be sent, representing
address bits A23 - A0. Since the upper address limit of the AT25DF041A memory array is
07FFFFh, address bits A23 - A19 are always ignored by the device.
6
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Table 6-1.
Command Listing
Command
Opcode
Address Bytes
Dummy Bytes
Data Bytes
Read Commands
Read Array
0Bh
0000 1011
3
1
1+
Read Array (Low Frequency)
03h
0000 0011
3
0
1+
Block Erase (4 Kbytes)
20h
0010 0000
3
0
0
Block Erase (32 Kbytes)
52h
0101 0010
3
0
0
Block Erase (64 Kbytes)
D8h
1101 1000
3
0
0
60h
0110 0000
0
0
0
C7h
1100 0111
0
0
0
02h
0000 0010
3
Program and Erase Commands
Chip Erase
Byte/Page Program (1 to 256 Bytes)
0
1+
(1)
0
1
ADh
1010 1101
3, 0
AFh
1010 1111
3, 0(1)
0
1
Write Enable
06h
0000 0110
0
0
0
Write Disable
04h
0000 0100
0
0
0
Protect Sector
36h
0011 0110
3
0
0
Unprotect Sector
39h
0011 1001
3
0
0
Sequential Program Mode
Protection Commands
Global Protect/Unprotect
Read Sector Protection Registers
Use Write Status Register command
3Ch
0011 1100
3
0
1+
Read Status Register
05h
0000 0101
0
0
1+
Write Status Register
01h
0000 0001
0
0
1
Read Manufacturer and Device ID
9Fh
1001 1111
0
0
1 to 4
Deep Power-down
B9h
1011 1001
0
0
0
Resume from Deep Power-down
ABh
1010 1011
0
0
0
Status Register Commands
Miscellaneous Commands
Note:
1. Three address bytes are only required for the first operation to designate the address to start programming at. Afterwards,
the internal address counter automatically increments, so subsequent Sequential Program Mode operations only require
clocking in of the opcode and the data byte until the Sequential Program Mode has been exited.
7
3668D–DFLASH–9/08
7. Read Commands
7.1
Read Array
The Read Array command can be used to sequentially read a continuous stream of data from
the device by simply providing the SCK signal once the initial starting address has been specified. The device incorporates an internal address counter that automatically increments on every
clock cycle.
Two opcodes, 0Bh and 03h, can be used for the Read Array command. The use of each opcode
depends on the maximum SCK frequency that will be used to read data from the device. The
0Bh opcode can be used at any SCK frequency up to the maximum specified by fSCK. The 03h
opcode can be used for lower frequency read operations up to the maximum specified by fRDLF.
To perform the Read Array operation, the CS pin must first be asserted and the appropriate
opcode (0Bh or 03h) must be clocked into the device. After the opcode has been clocked in, the
three address bytes must be clocked in to specify the starting address location of the first byte to
read within the memory array. If the 0Bh opcode is used, then one don't care byte must also be
clocked in after the three address bytes.
After the three address bytes (and the one don't care byte if using opcode 0Bh) have been
clocked in, additional clock cycles will result in serial data being output on the SO pin. The data
is always output with the MSB of a byte first. When the last byte (07FFFFh) of the memory array
has been read, the device will continue reading back at the beginning of the array (000000h).
No delays will be incurred when wrapping around from the end of the array to the beginning
of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte
of data be read.
Figure 7-1.
Read Array – 0Bh Opcode
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
OPCODE
SI
0
0
0
0
1
ADDRESS BITS A23-A0
0
1
1
MSB
A
A
A
A
A
A
A
DON'T CARE
A
A
MSB
X
X
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
MSB
Figure 7-2.
D
D
D
D
MSB
Read Array – 03h Opcode
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
0
0
0
0
ADDRESS BITS A23-A0
0
MSB
1
1
A
A
A
A
A
A
A
A
A
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
MSB
8
D
D
D
D
D
D
D
D
D
MSB
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
8. Program and Erase Commands
8.1
Byte/Page Program
The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of
data to be programmed into previously erased memory locations. An erased memory location is
one that has all eight bits set to the logical “1” state (a byte value of FFh). Before a Byte/Page
Program command can be started, the Write Enable command must have been previously
issued to the device (see “Write Enable” on page 15 command description) to set the Write
Enable Latch (WEL) bit of the Status Register to a logical “1” state.
To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device
followed by the three address bytes denoting the first byte location of the memory array to begin
programming at. After the address bytes have been clocked in, data can then be clocked into the
device and will be stored in an internal buffer.
If the starting memory address denoted by A23 - A0 does not fall on an even 256-byte page
boundary (A7 - A0 are not all 0’s), then special circumstances regarding which memory locations
will be programmed will apply. In this situation, any data that is sent to the device that goes
beyond the end of the page will wrap around back to the beginning of the same page. For example, if the starting address denoted by A23 - A0 is 0000FEh, and three bytes of data are sent to
the device, then the first two bytes of data will be programmed at addresses 0000FEh and
0000FFh while the last byte of data will be programmed at address 000000h. The remaining
bytes in the page (addresses 000001h through 0000FDh) will be unaffected and will not change.
In addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes
sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the appropriate memory array locations based on the starting address specified by
A23 - A0 and the number of data bytes sent to the device. If less than 256 bytes of data were
sent to the device, then the remaining bytes within the page will not be altered. The programming of the data bytes is internally self-timed and should take place in a time of tPP.
The three address bytes and at least one complete byte of data must be clocked into the device
before the CS pin is deasserted, and the CS pin must be deasserted on even byte boundaries
(multiples of eight bits); otherwise, the device will abort the operation and no data will be programmed into the memory array. In addition, if the address specified by A23 - A0 points to a
memory location within a sector that is in the protected state (see section “Protect Sector” on
page 16), then the Byte/Page Program command will not be executed, and the device will return
to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be
reset back to the logical “0” state if the program cycle aborts due to an incomplete address being
sent, an incomplete byte of data being sent, or because the memory location to be programmed
is protected.
While the device is programming, the Status Register can be read and will indicate that the
device is busy. For faster throughput, it is recommended that the Status Register be polled
rather than waiting the tBP or tPP time to determine if the data bytes have finished programming.
At some point before the program cycle completes, the WEL bit in the Status Register will be
reset back to the logical “0” state.
The device also incorporates an intelligent programming algorithm that can detect when a byte
location fails to program properly. If a programming error arises, it will be indicated by the EPE
bit in the Status Register.
9
3668D–DFLASH–9/08
The Byte/Page Program mode is the default programming mode after the device powers-up or
resumes from a device reset.
Figure 8-1.
Byte Program
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39
SCK
OPCODE
SI
0
0
0
0
0
ADDRESS BITS A23-A0
0
1
0
MSB
A
A
A
A
A
A
A
A
D
MSB
D
D
D
D
D
D
D
MSB
HIGH-IMPEDANCE
SO
Figure 8-2.
A
DATA IN
Page Program
CS
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38 39
SCK
OPCODE
SI
0
0
0
0
0
ADDRESS BITS A23-A0
0
MSB
SO
8.2
1
A
0
MSB
A
A
A
A
A
DATA IN BYTE 1
D
MSB
D
D
D
D
D
D
DATA IN BYTE n
D
D
D
D
D
D
D
D
D
MSB
HIGH-IMPEDANCE
Sequential Program Mode
The Sequential Program Mode improves throughput over the Byte/Page Program command
when the Byte/Page Program command is used to program single bytes only into consecutive
address locations. For example, some systems may be designed to program only a single byte
of information at a time and cannot utilize a buffered Page Program operation due to design
restrictions. In such a case, the system would normally have to perform multiple Byte Program
operations in order to program data into sequential memory locations. This approach can add
considerable system overhead and SPI bus traffic.
The Sequential Programming Mode helps reduce system overhead and bus traffic by incorporating an internal address counter that keeps track of the byte location to program, thereby
eliminating the need to supply an address sequence to the device for every byte to program.
When using the Sequential Program mode, all address locations to be programmed must be in
the erased state. Before the Sequential Program mode can first be entered, the Write Enable
command must have been previously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
To start the Sequential Program Mode, the CS pin must first be asserted, and either an opcode
of ADh or AFh must be clocked into the device. For the first program cycle, three address bytes
must be clocked in after the opcode to designate the first byte location to program. After the
address bytes have been clocked in, the byte of data to be programmed can be sent to the
10
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
device. Deasserting the CS pin will start the internally self-timed program operation, and the byte
of data will be programmed into the memory location specified by A23 - A0.
After the first byte has been successfully programmed, a second byte can be programmed by
simply reasserting the CS pin, clocking in the ADh or AFh opcode, and then clocking in the next
byte of data. When the CS pin is deasserted, the second byte of data will be programmed into
the next sequential memory location. The process would be repeated for any additional bytes.
There is no need to reissue the Write Enable command once the Sequential Program Mode has
been entered.
When the last desired byte has been programmed into the memory array, the Sequential
Program Mode operation can be terminated by reasserting the CS pin and sending the
Write Disable command to the device to reset the WEL bit in the Status Register back to the
logical “0” state.
If more than one byte of data is ever clocked in during each program cycle, then only the last
byte of data sent on the SI pin will be stored in the internal latches. The programming of each
byte is internally self-timed and should take place in a time of tBP. For each program cycle, a
complete byte of data must be clocked into the device before the CS pin is deasserted, and the
CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the
device will abort the operation, the byte of data will not be programmed into the memory array,
and the WEL bit in the Status Register will be reset back to the logical “0” state.
If the address initially specified by A23 - A0 points to a memory location within a sector that is in
the protected state, then the Sequential Program Mode command will not be executed, and the
device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will also be reset back to the logical “0” state.
There is no address wrapping when using the Sequential Program Mode. Therefore, when the
last byte (07FFFFh) of the memory array has been programmed, the device will automatically
exit the Sequential Program mode and reset the WEL bit in the Status Register back to the logical “0” state. In addition, the Sequential Program mode will not automatically skip over protected
sectors; therefore, once the highest unprotected memory location in a programming sequence
has been programmed, the device will automatically exit the Sequential Program mode and
reset the WEL bit in the Status Register. For example, if Sector 1 was protected and Sector 0
was currently being programmed, once the last byte of Sector 0 was programmed, the Sequential Program mode would automatically end. To continue programming with Sector 2, the
Sequential Program mode would have to be restarted by supplying the ADh or AFh opcode, the
three address bytes, and the first byte of Sector 2 to program.
While the device is programming a byte, the Status Register can be read and will indicate that
the device is busy. For faster throughput, it is recommended that the Status Register be polled at
the end of each program cycle rather than waiting the tBP time to determine if the byte has finished programming before starting the next Sequential Program mode cycle.
The device also incorporates an intelligent programming algorithm that can detect when a byte
location fails to program properly. If a programming error arises, it will be indicated by the EPE
bit in the Status Register.
11
3668D–DFLASH–9/08
Figure 8-3.
Sequential Program Mode – Status Register Polling
CS
Seqeuntial Program Mode
Command
SI
Opcode A23-16
Status Register Read Seqeuntial Program Mode
Command
Command
A15-8
A7-0
Data
05h
Opcode
Data
Seqeuntial Program Mode Write Disable
Command
Command
05h
Opcode
Data
04h
05h
First Address to Program
STATUS REGISTER
DATA
STATUS REGISTER
DATA
STATUS REGISTER
DATA
HIGH-IMPEDANCE
SO
Note: Each transition
Figure 8-4.
shown for SI represents one byte (8 bits)
Sequential Program Mode – Waiting Maximum Byte Program Time
CS
tBP
Seqeuntial Program Mode
Command
SI
Opcode A23-16
tBP
Seqeuntial Program Mode
Command
A15-8
A7-0
Data
Opcode
Data
tBP
Seqeuntial Program Mode
Command
Opcode
Data
Write Disable
Command
04h
First Address to Program
SO
HIGH-IMPEDANCE
Note: Each transition
8.3
shown for SI represents one byte (8 bits)
Block Erase
A block of 4, 32, or 64 Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of three different opcodes for the Block Erase command. An opcode of 20h is
used for a 4-Kbyte erase, an opcode of 52h is used for a 32-Kbyte erase, and an opcode of D8h
is used for a 64-Kbyte erase. Before a Block Erase command can be started, the Write Enable
command must have been previously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h,
52h or D8h) must be clocked into the device. After the opcode has been clocked in, the three
address bytes specifying an address within the 4-, 32-, or 64-Kbyte block to be erased must be
clocked in. Any additional data clocked into the device will be ignored. When the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally selftimed and should take place in a time of tBLKE.
Since the Block Erase command erases a region of bytes, the lower order address bits do not
need to be decoded by the device. Therefore, for a 4-Kbyte erase, address bits A11 - A0 will be
ignored by the device and their values can be either a logical “1” or “0”. For a 32-Kbyte erase,
address bits A14 - A0 will be ignored, and for a 64-Kbyte erase, address bits A15 - A0 will be
ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation and no erase operation will be performed.
12
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
If the address specified by A23 - A0 points to a memory location within a sector that is in the protected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted. In addition, with the larger Block Erase
sizes of 32K and 64 Kbytes, more than one physical sector may be erased (e.g. sectors 18
through 15) at one time. Therefore, in order to erase a larger block that may span more than one
sector, all of the sectors in the span must be in the unprotected state. If one of the physical sectors within the span is in the protected state, then the device will ignore the Block Erase
command and will return to the idle state once the CS pin is deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle
aborts due to an incomplete address being sent or because a memory location within the region
to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to determine if the device has finished erasing. At
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location
fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status
Register.
Figure 8-5.
Block Erase
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
26 27 28 29 30 31
SCK
OPCODE
SI
C
C
C
C
C
C
MSB
SO
ADDRESS BITS A23-A0
C
C
A
A
A
A
A
A
A
A
A
A
A
A
MSB
HIGH-IMPEDANCE
13
3668D–DFLASH–9/08
8.4
Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command.
Before a Chip Erase command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in
device functionality when utilizing the two opcodes, so they can be used interchangeably. To
perform a Chip Erase, one of the two opcodes (60h or C7h) must be clocked into the device.
Since the entire memory array is to be erased, no address bytes need to be clocked into the
device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted,
the device will erase the entire memory array. The erasing of the device is internally self-timed
and should take place in a time of tCHPE.
The complete opcode must be clocked into the device before the CS pin is deasserted, and the
CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no
erase will be performed. In addition, if any sector of the memory array is in the protected state,
then the Chip Erase command will not be executed, and the device will return to the idle state
once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical “0” state if a sector is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tCHPE time to determine if the device has finished erasing. At
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location
fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status
Register.
Figure 8-6.
Chip Erase
CS
0
1
2
3
4
5
6
7
SCK
OPCODE
SI
C
C
C
C
C
C
C
C
MSB
SO
14
HIGH-IMPEDANCE
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
9. Protection Commands and Features
9.1
Write Enable
The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Register to a logical “1” state. The WEL bit must be set before a program, erase, Protect Sector,
Unprotect Sector, or Write Status Register command can be executed. This makes the issuance
of these commands a two step process, thereby reducing the chances of a command being
accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to the
issuance of one of these commands, then the command will not be executed.
To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h
must be clocked into the device. No address bytes need to be clocked into the device, and any
data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in
the Status Register will be set to a logical “1”. The complete opcode must be clocked into the
device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of
the WEL bit will not change.
Figure 9-1.
Write Enable
CS
0
1
2
3
4
5
6
7
SCK
OPCODE
SI
0
0
0
0
0
1
1
0
MSB
SO
9.2
HIGH-IMPEDANCE
Write Disable
The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Register to the logical “0” state. With the WEL bit reset, all program, erase, Protect Sector, Unprotect
Sector, and Write Status Register commands will not be executed. The Write Disable command
is also used to exit the Sequential Program Mode. Other conditions can also cause the WEL bit
to be reset; for more details, refer to the WEL bit section of the Status Register description.
To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h
must be clocked into the device. No address bytes need to be clocked into the device, and any
data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in
the Status Register will be reset to a logical “0”. The complete opcode must be clocked into the
device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of
the WEL bit will not change.
15
3668D–DFLASH–9/08
Figure 9-2.
Write Disable
CS
0
1
2
3
4
5
6
7
SCK
OPCODE
SI
0
0
0
0
0
1
0
0
MSB
SO
9.3
HIGH-IMPEDANCE
Protect Sector
Every physical sector of the device has a corresponding single-bit Sector Protection Register
that is used to control the software protection of a sector. Upon device power-up or after a
device reset, each Sector Protection Register will default to the logical “1” state indicating that all
sectors are protected and cannot be programmed or erased.
Issuing the Protect Sector command to a particular sector address will set the corresponding
Sector Protection Register to the logical “1” state. The following table outlines the two states of
the Sector Protection Registers.
Table 9-1.
Value
Sector Protection Register Values
Sector Protection Status
0
Sector is unprotected and can be programmed and erased.
1
Sector is protected and cannot be programmed or erased. This is the default state.
Before the Protect Sector command can be issued, the Write Enable command must have been
previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the Protect
Sector command, the CS pin must first be asserted and the opcode of 36h must be clocked into
the device followed by three address bytes designating any address within the sector to be
locked. Any additional data clocked into the device will be ignored. When the CS pin is deasserted, the Sector Protection Register corresponding to the physical sector addressed by
A23 - A0 will be set to the logical “1” state, and the sector itself will then be protected from
program and erase operations. In addition, the WEL bit in the Status Register will be reset back
to the logical “0” state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation, the state of the Sector Protection Register will be
unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.
As a safeguard against accidental or erroneous protecting or unprotecting of sectors, the Sector
Protection Registers can themselves be locked from updates by using the SPRL (Sector Protection Registers Locked) bit of the Status Register (please refer to the Status Register description
for more details). If the Sector Protection Registers are locked, then any attempts to issue the
Protect Sector command will be ignored, and the device will reset the WEL bit in the Status Register back to a logical “0” and return to the idle state once the CS pin has been deasserted.
16
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Figure 9-3.
Protect Sector
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
26 27 28 29 30 31
SCK
OPCODE
SI
0
0
1
1
0
ADDRESS BITS A23-A0
1
1
0
MSB
SO
9.4
A
A
A
A
A
A
A
A
A
A
A
A
MSB
HIGH-IMPEDANCE
Unprotect Sector
Issuing the Unprotect Sector command to a particular sector address will reset the corresponding Sector Protection Register to the logical “0” state (see Table 9-1 for Sector Protection
Register values). Every physical sector of the device has a corresponding single-bit Sector Protection Register that is used to control the software protection of a sector.
Before the Unprotect Sector command can be issued, the Write Enable command must have
been previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the
Unprotect Sector command, the CS pin must first be asserted and the opcode of 39h must be
clocked into the device. After the opcode has been clocked in, the three address bytes designating any address within the sector to be unlocked must be clocked in. Any additional data clocked
into the device after the address bytes will be ignored. When the CS pin is deasserted, the Sector Protection Register corresponding to the sector addressed by A23 - A0 will be reset to the
logical “0” state, and the sector itself will be unprotected. In addition, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation, the state of the Sector Protection Register will be
unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.
As a safeguard against accidental or erroneous locking or unlocking of sectors, the Sector Protection Registers can themselves be locked from updates by using the SPRL (Sector Protection
Registers Locked) bit of the Status Register (please refer to the Status Register description for
more details). If the Sector Protection Registers are locked, then any attempts to issue the
Unprotect Sector command will be ignored, and the device will reset the WEL bit in the Status
Register back to a logical “0” and return to the idle state once the CS pin has been deasserted.
Figure 9-4.
Unprotect Sector
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
26 27 28 29 30 31
SCK
OPCODE
SI
0
0
1
1
1
ADDRESS BITS A23-A0
0
MSB
SO
0
1
A
A
A
A
A
A
A
A
A
A
A
A
MSB
HIGH-IMPEDANCE
17
3668D–DFLASH–9/08
9.5
Global Protect/Unprotect
The Global Protect and Global Unprotect features can work in conjunction with the Protect Sector and Unprotect Sector functions. For example, a system can globally protect the entire
memory array and then use the Unprotect Sector command to individually unprotect certain sectors and individually reprotect them later by using the Protect Sector command. Likewise, a
system can globally unprotect the entire memory array and then individually protect certain sectors as needed.
Performing a Global Protect or Global Unprotect is accomplished by writing a certain combination of data to the Status Register using the Write Status Register command (see “Write Status
Register” section on page 26 for command execution details). The Write Status Register command is also used to modify the SPRL (Sector Protection Registers Locked) bit to control
hardware and software locking.
To perform a Global Protect, the appropriate WP pin and SPRL conditions must be met, and the
system must write a logical “1” to bits 5, 4, 3, and 2 of the Status Register. Conversely, to perform a Global Unprotect, the same WP and SPRL conditions must be met but the system must
write a logical “0” to bits 5, 4, 3, and 2 of the Status Register. Table 9-2 details the conditions
necessary for a Global Protect or Global Unprotect to be performed.
18
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Table 9-2.
WP
State
0
Valid SPRL and Global Protect/Unprotect Conditions
Current
SPRL
Value
New
Write Status
Register Data
New
SPRL
Value
Bit
76543210
Protection Operation
0x0000xx
0x0001xx
↕
0x1110xx
0x1111xx
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
0
0
0
0
0
1x0000xx
1x0001xx
↕
1x1110xx
1x1111xx
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
1
1
1
1
1
0
No change to the current protection level. All sectors currently
protected will remain protected and all sectors currently unprotected
will remain unprotected.
0
1
1
1
xxxxxxxx
The Sector Protection Registers are hard-locked and cannot be
changed when the WP pin is LOW and the current state of SPRL is 1.
Therefore, a Global Protect/Unprotect will not occur. In addition, the
SPRL bit cannot be changed (the WP pin must be HIGH in order to
change SPRL back to a 0).
0x0000xx
0x0001xx
↕
0x1110xx
0x1111xx
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
0
0
0
0
0
1x0000xx
1x0001xx
↕
1x1110xx
1x1111xx
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
1
1
1
1
1
0x0000xx
0x0001xx
↕
0x1110xx
0x1111xx
No change to the current protection level. All sectors
currently protected will remain protected, and all sectors
currently unprotected will remain unprotected.
0
0
0
0
0
0
1
1x0000xx
1x0001xx
↕
1x1110xx
1x1111xx
The Sector Protection Registers are soft-locked and cannot
be changed when the current state of SPRL is 1. Therefore,
a Global Protect/Unprotect will not occur. However, the
SPRL bit can be changed back to a 0 from a 1 since the WP
pin is HIGH. To perform a Global Protect/Unprotect, the
Write Status Register command must be issued again after
the SPRL bit has been changed from a 1 to a 0.
1
1
1
1
1
Essentially, if the SPRL bit of the Status Register is in the logical “0” state (Sector Protection
Registers are not locked), then writing a 00h to the Status Register will perform a Global Unprotect without changing the state of the SPRL bit. Similarly, writing a 7Fh to the Status Register will
perform a Global Protect and keep the SPRL bit in the logical “0” state. The SPRL bit can, of
course, be changed to a logical “1” by writing an FFh if software-locking or hardware-locking is
desired along with the Global Protect.
19
3668D–DFLASH–9/08
If the desire is to only change the SPRL bit without performing a Global Protect or Global Unprotect, then the system can simply write a 0Fh to the Status Register to change the SPRL bit from
a logical “1” to a logical “0” provided the WP pin is deasserted. Likewise, the system can write an
F0h to change the SPRL bit from a logical “0” to a logical “1” without affecting the current sector
protection status (no changes will be made to the Sector Protection Registers).
When writing to the Status Register, bits 5, 4, 3, and 2 will not actually be modified but will be
decoded by the device for the purposes of the Global Protect and Global Unprotect functions.
Only bit 7, the SPRL bit, will actually be modified. Therefore, when reading the Status Register,
bits 5, 4, 3, and 2 will not reflect the values written to them but will instead indicate the status of
the WP pin and the sector protection status. Please refer to the “Read Status Register” section
and Table 10-1 on page 23 for details on the Status Register format and what values can be
read for bits 5, 4, 3, and 2.
9.6
Read Sector Protection Registers
The Sector Protection Registers can be read to determine the current software protection status
of each sector. Reading the Sector Protection Registers, however, will not determine the status
of the WP pin.
To read the Sector Protection Register for a particular sector, the CS pin must first be asserted
and the opcode of 3Ch must be clocked in. Once the opcode has been clocked in, three address
bytes designating any address within the sector must be clocked in. After the last address byte
has been clocked in, the device will begin outputting data on the SO pin during every subsequent clock cycle. The data being output will be a repeating byte of either FFh or 00h to denote
the value of the appropriate Sector Protection Register.
Table 9-3.
Read Sector Protection Register – Output Data
Output Data
Sector Protection Register Value
00h
Sector Protection Register value is 0 (sector is unprotected).
FFh
Sector Protection Register value is 1 (sector is protected).
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of
data be read.
In addition to reading the individual Sector Protection Registers, the Software Protection Status
(SWP) bit in the Status Register can be read to determine if all, some, or none of the sectors are
software protected (refer to the “Status Register Commands” on page 23 for more details).
Figure 9-5.
Read Sector Protection Register
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
0
1
1
1
ADDRESS BITS A23-A0
1
MSB
0
0
A
A
A
A
A
A
A
A
A
MSB
DATA BYTE
SO
HIGH-IMPEDANCE
D
MSB
20
D
D
D
D
D
D
D
D
D
MSB
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
9.7
Protected States and the Write Protect (WP) Pin
The WP pin is not linked to the memory array itself and has no direct effect on the protection status of the memory array. Instead, the WP pin, in conjunction with the SPRL (Sector Protection
Registers Locked) bit in the Status Register, is used to control the hardware locking mechanism
of the device. For hardware locking to be active, two conditions must be met – the WP pin must
be asserted and the SPRL bit must be in the logical “1” state.
When hardware locking is active, the Sector Protection Registers are locked and the SPRL bit
itself is also locked. Therefore, sectors that are protected will be locked in the protected state,
and sectors that are unprotected will be locked in the unprotected state. These states cannot be
changed as long as hardware locking is active, so the Protect Sector, Unprotect Sector, and
Write Status Register commands will be ignored. In order to modify the protection status of a
sector, the WP pin must first be deasserted, and the SPRL bit in the Status Register must be
reset back to the logical “0” state using the Write Status Register command. When resetting the
SPRL bit back to a logical “0”, it is not possible to perform a Global Protect or Global Unprotect
at the same time since the Sector Protection Registers remain soft-locked until after the Write
Status Register command has been executed.
If the WP pin is permanently connected to GND, then once the SPRL bit is set to a logical “1”,
the only way to reset the bit back to the logical “0” state is to power-cycle or reset the device.
This allows a system to power-up with all sectors software protected but not hardware locked.
Therefore, sectors can be unprotected and protected as needed and then hardware locked at a
later time by simply setting the SPRL bit in the Status Register.
When the WP pin is deasserted, or if the WP pin is permanently connected to VCC, the SPRL bit
in the Status Register can still be set to a logical “1” to lock the Sector Protection Registers. This
provides a software locking ability to prevent erroneous Protect Sector or Unprotect Sector commands from being processed. When changing the SPRL bit to a logical “1” from a logical “0”, it is
also possible to perform a Global Protect or Global Unprotect at the same time by writing the
appropriate values into bits 5, 4, 3, and 2 of the Status Register.
Tables 9-4 and 9-5 detail the various protection and locking states of the device.
Table 9-4.
Sector Protection Register States
WP
Sector Protection Register
n(1)
Sector
n(1)
0
Unprotected
1
Protected
X
(Don't Care)
Note:
1. “n” represents a sector number
21
3668D–DFLASH–9/08
Table 9-5.
WP
0
0
1
1
22
Hardware and Software Locking
SPRL
Locking
0
1
Hardware
Locked
0
1
Software
Locked
SPRL Change Allowed
Sector Protection Registers
Can be modified from 0 to 1
Unlocked and modifiable using
the Protect and Unprotect Sector
commands. Global Protect and
Unprotect can also be performed.
Locked
Locked in current state. Protect
and Unprotect Sector commands
will be ignored. Global Protect and
Unprotect cannot be performed.
Can be modified from 0 to 1
Unlocked and modifiable using the
Protect and Unprotect Sector
commands. Global Protect and
Unprotect can also be performed.
Can be modified from 1 to 0
Locked in current state. Protect and
Unprotect Sector commands will be
ignored. Global Protect and Unprotect
cannot be performed.
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
10. Status Register Commands
10.1
Read Status Register
The Status Register can be read to determine the device's ready/busy status, as well as the status of many other functions such as Hardware Locking and Software Protection. The Status
Register can be read at any time, including during an internally self-timed program or erase
operation.
To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be
clocked into the device. After the last bit of the opcode has been clocked in, the device will begin
outputting Status Register data on the SO pin during every subsequent clock cycle. After the last
bit (bit 0) of the Status Register has been clocked out, the sequence will repeat itself starting
again with bit 7 as long as the CS pin remains asserted and the SCK pin is being pulsed. The
data in the Status Register is constantly being updated, so each repeating sequence will output
new data.
Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin
into a high-impedance state. The CS pin can be deasserted at any time and does not require
that a full byte of data be read.
Table 10-1.
Status Register Format
Bit(1)
7
6
5
4
3:2
1
0
Notes:
Name
SPRL
SPM
EPE
WPP
SWP
WEL
RDY/BSY
Sector Protection Registers Locked
Sequential Program Mode Status
Erase/Program Error
Write Protect (WP) Pin Status
Software Protection Status
Write Enable Latch Status
Ready/Busy Status
Type(2)
Description
0
Sector Protection Registers are unlocked (default).
1
Sector Protection Registers are locked.
0
Byte/Page Programming Mode (default).
1
Sequential Programming Mode entered.
0
Erase or program operation was successful.
1
Erase or program error detected.
0
WP is asserted.
1
WP is deasserted.
00
All sectors are software unprotected (all Sector
Protection Registers are 0).
01
Some sectors are software protected. Read individual
Sector Protection Registers to determine which
sectors are protected.
10
Reserved for future use.
11
All sectors are software protected (all Sector
Protection Registers are 1 – default).
0
Device is not write enabled (default).
1
Device is write enabled.
0
Device is ready.
1
Device is busy with an internal operation.
R/W
R
R
R
R
R
R
1. Only bit 7 of the Status Register will be modified when using the Write Status Register command.
2. R/W = Readable and writable
R = Readable only
23
3668D–DFLASH–9/08
10.1.1
SPRL Bit
The SPRL bit is used to control whether the Sector Protection Registers can be modified or not.
When the SPRL bit is in the logical “1” state, all Sector Protection Registers are locked and cannot be modified with the Protect Sector and Unprotect Sector commands (the device will ignore
these commands). In addition, the Global Protect and Global Unprotect features cannot be performed. Any sectors that are presently protected will remain protected, and any sectors that are
presently unprotected will remain unprotected.
When the SPRL bit is in the logical “0” state, all Sector Protection Registers are unlocked and
can be modified (the Protect Sector and Unprotect Sector commands, as well as the Global Protect and Global Unprotect features, will be processed as normal). The SPRL bit defaults to the
logical “0” state after a power-up or a device reset.
The SPRL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin
is asserted, then the SPRL bit may only be changed from a logical “0” (Sector Protection Registers are unlocked) to a logical “1” (Sector Protection Registers are locked). In order to reset the
SPRL bit back to a logical “0” using the Write Status Register command, the WP pin will have to
first be deasserted.
The SPRL bit is the only bit of the Status Register that can be user modified via the Write Status
Register command.
10.1.2
SPM Bit
The SPM bit indicates whether the device is in the Byte/Page Program mode or the Sequential
Program Mode. The default state after power-up or device reset is the Byte/Page Program
mode.
10.1.3
EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or
not. If at least one byte during the erase or program operation did not erase or program properly,
then the EPE bit will be set to the logical “1” state. The EPE bit will not be set if an erase or program operation aborts for any reason such as an attempt to erase or program a protected region
or if the WEL bit is not set prior to an erase or program operation. The EPE bit will be updated
after every erase and program operation.
10.1.4
WPP Bit
The WPP bit can be read to determine if the WP pin has been asserted or not.
10.1.5
SWP Bits
The SWP bits provide feedback on the software protection status for the device. There are three
possible combinations of the SWP bits that indicate whether none, some, or all of the sectors
have been protected using the Protect Sector command or the Global Protect feature. If the
SWP bits indicate that some of the sectors have been protected, then the individual Sector Protection Registers can be read with the Read Sector Protection Registers command to determine
which sectors are in fact protected.
24
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
10.1.6
WEL Bit
The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is
in the logical “0” state, the device will not accept any program, erase, Protect Sector, Unprotect
Sector, or Write Status Register commands. The WEL bit defaults to the logical “0” state after a
device power-up or reset. In addition, the WEL bit will be reset to the logical “0” state automatically under the following conditions:
• Write Disable operation completes successfully
• Write Status Register operation completes successfully or aborts
• Protect Sector operation completes successfully or aborts
• Unprotect Sector operation completes successfully or aborts
• Byte/Page Program operation completes successfully or aborts
• Sequential Program Mode reaches highest unprotected memory location
• Sequential Program Mode reaches the end of the memory array
• Sequential Program Mode aborts
• Block Erase operation completes successfully or aborts
• Chip Erase operation completes successfully or aborts
• Hold condition aborts
If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts
due to an incomplete or unrecognized opcode being clocked into the device before the CS pin is
deasserted. In order for the WEL bit to be reset when an operation aborts prematurely, the entire
opcode for a program, erase, Protect Sector, Unprotect Sector, or Write Status Register command must have been clocked into the device.
10.1.7
RDY/BSY Bit
The RDY/BSY bit is used to determine whether or not an internal operation, such as a program
or erase, is in progress. To poll the RDY/BSY bit to detect the completion of a program or erase
cycle, new Status Register data must be continually clocked out of the device until the state of
the RDY/BSY bit changes from a logical “1” to a logical “0”.
Figure 10-1. Read Status Register
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SCK
OPCODE
SI
0
0
0
0
0
1
0
1
MSB
STATUS REGISTER DATA
SO
HIGH-IMPEDANCE
D
MSB
D
D
D
D
D
D
D
STATUS REGISTER DATA
D
MSB
D
D
D
D
D
D
D
D
D
MSB
25
3668D–DFLASH–9/08
10.2
Write Status Register
The Write Status Register command is used to modify the SPRL bit of the Status Register
and/or to perform a Global Protect or Global Unprotect operation. Before the Write Status Register command can be issued, the Write Enable command must have been previously issued to
set the WEL bit in the Status Register to a logical “1”.
To issue the Write Status Register command, the CS pin must first be asserted and the opcode
of 01h must be clocked into the device followed by one byte of data. The one byte of data consists of the SPRL bit value, a don’t care bit, four data bits to denote whether a Global Protect or
Unprotect should be performed, and two additional don’t care bits (see Table 10-2). Any additional data bytes that are sent to the device will be ignored. When the CS pin is deasserted, the
SPRL bit in the Status Register will be modified, and the WEL bit in the Status Register will be
reset back to a logical “0”. The values of bits 5, 4, 3, and 2 and the state of the SPRL bit before
the Write Status Register command was executed (the prior state of the SPRL bit) will determine
whether or not a Global Protect or Global Unprotect will be perfomed. Please refer to the “Global
Protect/Unprotect” section on page 18 for more details.
The complete one byte of data must be clocked into the device before the CS pin is deasserted;
otherwise, the device will abort the operation, the state of the SPRL bit will not change, no
potential Global Protect or Unprotect will be performed, and the WEL bit in the Status Register
will be reset back to the logical “0” state.
If the WP pin is asserted, then the SPRL bit can only be set to a logical “1”. If an attempt is made
to reset the SPRL bit to a logical “0” while the WP pin is asserted, then the Write Status Register
command will be ignored, and the WEL bit in the Status Register will be reset back to the logical
“0” state. In order to reset the SPRL bit to a logical “0”, the WP pin must be deasserted.
Table 10-2.
Write Status Register Format
Bit 7
Bit 6
SPRL
X
Bit 5
Bit 4
Bit 3
Bit 2
Global Protect/Unprotect
Bit 1
Bit 0
X
X
Figure 10-2. Write Status Register
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCK
OPCODE
SI
0
0
0
0
0
STATUS REGISTER IN
0
MSB
SO
26
0
1
D
X
D
D
D
D
X
X
MSB
HIGH-IMPEDANCE
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
11. Other Commands and Functions
11.1
Read Manufacturer and Device ID
Identification information can be read from the device to enable systems to electronically query
and identify the device while it is in system. The identification method and the command opcode
comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI
Compatible Serial Interface Memory Devices”. The type of information that can be read from the
device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the vendor specific Extended Device Information.
To read the identification information, the CS pin must first be asserted and the opcode of 9Fh
must be clocked into the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte
that will be output will be the Manufacturer ID followed by two bytes of Device ID information.
The fourth byte output will be the Extended Device Information String Length, which will be 00h
indicating that no Extended Device Information follows. After the Extended Device Information
String Length byte is output, the SO pin will go into a high-impedance state; therefore, additional
clock cycles will have no affect on the SO pin and no data will be output. As indicated in the
JEDEC standard, reading the Extended Device Information String Length and any subsequent
data is optional.
Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and put
the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not
require that a full byte of data be read.
Table 11-1.
Manufacturer and Device ID Information
Byte No.
Table 11-2.
Data Type
Value
1
Manufacturer ID
1Fh
2
Device ID (Part 1)
44h
3
Device ID (Part 2)
01h
4
Extended Device Information String Length
00h
Manufacturer and Device ID Details
Data Type
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
1
1
0
0
Hex
Value
Details
JEDEC Assigned Code
Manufacturer ID
0
0
0
1
1
Family Code
1
1
0
0
Sub Code
0
1
0
0001 1111 (1Fh for Atmel)
44h
Family Code:
Density Code:
010 (AT25/26DFxxx series)
00100 (4-Mbit)
01h
Sub Code:
000 (Standard series)
Product Version: 00001 (First major revision)
Product Version Code
Device ID (Part 2)
0
JEDEC Code:
Density Code
Device ID (Part 1)
0
1Fh
0
0
0
0
0
1
27
3668D–DFLASH–9/08
Figure 11-1. Read Manufacturer and Device ID
CS
0
6
7
8
14 15 16
22 23 24
30 31 32
38
SCK
OPCODE
SI
SO
9Fh
HIGH-IMPEDANCE
Note: Each transition
11.2
1Fh
44h
01h
00h
MANUFACTURER ID
DEVICE ID
BYTE 1
DEVICE ID
BYTE 2
EXTENDED
DEVICE
INFORMATION
STRING LENGTH
shown for SI and SO represents one byte (8 bits)
Deep Power-down
During normal operation, the device will be placed in the standby mode to consume less power
as long as the CS pin remains deasserted and no internal operation is in progress. The Deep
Power-down command offers the ability to place the device into an even lower power consumption state called the Deep Power-down mode.
When the device is in the Deep Power-down mode, all commands including the Read Status
Register command will be ignored with the exception of the Resume from Deep Power-down
command. Since all commands will be ignored, the mode can be used as an extra protection
mechanism against program and erase operations.
Entering the Deep Power-down mode is accomplished by simply asserting the CS pin, clocking
in the opcode of B9h, and then deasserting the CS pin. Any additional data clocked into the
device after the opcode will be ignored. When the CS pin is deasserted, the device will enter the
Deep Power-down mode within the maximum time of tEDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must
be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort
the operation and return to the standby mode once the CS pin is deasserted. In addition, the
device will default to the standby mode after a power-cycle or a device reset.
The Deep Power-down command will be ignored if an internally self-timed operation such as a
program or erase cycle is in progress. The Deep Power-down command must be reissued after
the internally self-timed operation has been completed in order for the device to enter the Deep
Power-down mode.
28
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Figure 11-2. Deep Power-down
CS
tEDPD
0
1
2
3
4
5
6
7
SCK
OPCODE
SI
1
0
1
1
1
0
0
1
MSB
SO
HIGH-IMPEDANCE
Active Current
ICC
Standby Mode Current
11.3
Deep Power-Down Mode Current
Resume from Deep Power-down
In order exit the Deep Power-down mode and resume normal device operation, the Resume
from Deep Power-down command must be issued. The Resume from Deep Power-down command is the only command that the device will recognize while in the Deep Power-down mode.
To resume from the Deep Power-down mode, the CS pin must first be asserted and opcode of
ABh must be clocked into the device. Any additional data clocked into the device after the
opcode will be ignored. When the CS pin is deasserted, the device will exit the Deep Powerdown mode within the maximum time of tRDPD and return to the standby mode. After the device
has returned to the standby mode, normal command operations such as Read Array can be
resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not
deasserted on an even byte boundary (multiples of eight bits), then the device will abort the
operation and return to the Deep Power-down mode.
Figure 11-3. Resume from Deep Power-down
CS
tRDPD
0
1
2
3
4
5
6
7
SCK
OPCODE
SI
1
0
1
0
1
0
1
1
MSB
SO
HIGH-IMPEDANCE
Active Current
ICC
Deep Power-Down Mode Current
Standby Mode Current
29
3668D–DFLASH–9/08
11.4
Hold
The HOLD pin is used to pause the serial communication with the device without having to stop
or reset the clock sequence. The Hold mode, however, does not have an affect on any internally
self-timed operations such as a program or erase cycle. Therefore, if an erase cycle is in
progress, asserting the HOLD pin will not pause the operation, and the erase cycle will continue
until it is finished.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated
simply by asserting the HOLD pin during the SCK low pulse. If the HOLD pin is asserted during
the SCK high pulse, then the Hold mode won't be started until the beginning of the next SCK low
pulse. The device will remain in the Hold mode as long as the HOLD pin and CS pin are
asserted.
While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin
and the SCK pin will be ignored. The WP pin, however, can still be asserted or deasserted while
in the Hold mode.
To end the Hold mode and resume serial communication, the HOLD pin must be deasserted
during the SCK low pulse. If the HOLD pin is deasserted during the SCK high pulse, then the
Hold mode won't end until the beginning of the next SCK low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may
have been started will be aborted, and the device will reset the WEL bit in the Status Register
back to the logical “0” state.
Figure 11-4. Hold Mode
CS
SCK
HOLD
Hold
30
Hold
Hold
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
12. Electrical Specifications
12.1
Absolute Maximum Ratings*
Temperature under Bias ............................... -55° C to +125° C
*NOTICE:
Storage Temperature .................................... -65° C to +150° C
All Input Voltages
(including NC Pins)
with Respect to Ground .....................................-0.6V to +4.1V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.5V
12.2
DC and AC Operating Range
Operating Temperature (Case)
AT25DF041A (2.3V version)
AT25DF041A
-40° C to 85° C
-40° C to 85° C
2.3V to 3.6V
2.7V to 3.6V
Ind.
VCC Power Supply
12.3
DC Characteristics
Symbol
Parameter
Condition
ISB
Standby Current
IDPD
Deep Power-down Current
ICC1
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Active Current, Read Operation
Min
Typ
Max
Units
CS, WP, HOLD = VCC,
all inputs at CMOS levels
25
35
µA
CS, WP, HOLD = VCC,
all inputs at CMOS levels
15
20
µA
f = 70 MHz; IOUT = 0 mA;
CS = VIL, VCC = Max
11
16
f = 66 MHz; IOUT = 0 mA;
CS = VIL, VCC = Max
10
15
f = 50 MHz; IOUT = 0 mA;
CS = VIL, VCC = Max
9
14
f = 33 MHz; IOUT = 0 mA;
CS = VIL, VCC = Max
8
12
f = 20 MHz; IOUT = 0 mA;
CS = VIL, VCC = Max
7
10
mA
ICC2
Active Current, Program Operation
CS = VCC, VCC = Max
12
18
mA
ICC3
Active Current, Erase Operation
CS = VCC, VCC = Max
14
20
mA
ILI
Input Leakage Current
VIN = CMOS levels
1
µA
ILO
Output Leakage Current
VOUT = CMOS levels
1
µA
VIL
Input Low Voltage
0.3 x VCC
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = Min
VOH
Output High Voltage
IOH = -100 µA
0.7 x VCC
V
0.4
VCC - 0.2V
V
V
31
3668D–DFLASH–9/08
12.4
AC Characteristics
AT25DF041A
(2.3V version)
Symbol
Parameter
fSCK
Serial Clock (SCK) Frequency
fRDLF
SCK Frequency for Read Array (Low Frequency - 03h opcode)
tSCKH
SCK High Time
8.0
6.4
ns
SCK Low Time
8.0
6.4
ns
SCK Rise Time, Peak-to-Peak (Slew Rate)
0.1
0.1
V/ns
tSCKF(1)
SCK Fall Time, Peak-to-Peak (Slew Rate)
0.1
0.1
V/ns
tCSH
Chip Select High Time
50
50
ns
tCSLS
Chip Select Low Setup Time (relative to SCK)
5
5
ns
tCSLH
Chip Select Low Hold Time (relative to SCK)
5
5
ns
tCSHS
Chip Select High Setup Time (relative to SCK)
5
5
ns
tCSHH
Chip Select High Hold Time (relative to SCK)
5
5
ns
tDS
Data In Setup Time
2
2
ns
tDH
Data In Hold Time
3
3
ns
tDIS(1)
Output Disable Time
7
6
ns
tV(2)
Output Valid Time
7
6
ns
tOH
Output Hold Time
0
0
ns
tHLS
HOLD Low Setup Time (relative to SCK)
5
5
ns
tHLH
HOLD Low Hold Time (relative to SCK)
5
5
ns
tHHS
HOLD High Setup Time (relative to SCK)
5
5
ns
tHHH
HOLD High Hold Time (relative to SCK)
5
5
ns
tHLQZ(1)
HOLD Low to Output High-Z
7
6
ns
tHHQX(1)
HOLD High to Output Low-Z
7
6
ns
tWPS(1)(3)
Write Protect Setup Time
20
20
ns
Write Protect Hold Time
100
100
ns
tSCKL
tSCKR
tWPH
(1)
(1)(3)
Min
Max
AT25DF041A
Min
Max
Units
50
70
MHz
33
33
MHz
tSECP(1)
Sector Protect Time (from Chip Select High)
20
20
ns
tSECUP(1)
Sector Unprotect Time (from Chip Select High)
20
20
ns
tEDPD(1)
Chip Select High to Deep Power-down
3
3
µs
Chip Select High to Standby Mode
3
3
µs
tRDPD(1)
Notes:
1. Not 100% tested (value guaranteed by design and characterization).
2. 15 pF load at 70 MHz, 30 pF load at 66 MHz.
3. Only applicable as a constraint for the Write Status Register command when SPRL = 1
32
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
12.5
Program and Erase Characteristics
Symbol
Parameter
tPP(1)
Page Program Time (256 Bytes)
tBP
Byte Program Time
tBLKE(1)
Note:
(2)
Typ
Max
Units
1.2
5
ms
7
Block Erase Time
tCHPE(1)(2)
tWRSR
Min
µs
4 Kbytes
50
200
32 Kbytes
250
600
64 Kbytes
400
950
3
7
sec
200
ns
Chip Erase Time
Write Status Register Time
ms
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
12.6
Power-up Conditions
Symbol
Parameter
tVCSL
Minimum VCC to Chip Select Low Time
tPUW
Power-up Device Delay Before Program or Erase Allowed
VPOR
Power-on Reset Voltage
12.7
Min
Max
70
1.5
Units
µs
10
ms
2.2
V
Input Test Waveforms and Measurement Levels
AC
DRIVING
LEVELS
2.4V
1.5V
0.45V
AC
MEASUREMENT
LEVEL
tR, tF < 2 ns (10% to 90%)
12.8
Output Test Load
DEVICE
UNDER
TEST
30 pF
33
3668D–DFLASH–9/08
13. Waveforms
Figure 13-1. Serial Input Timing
tCSH
CS
tCSLH
tSCKL
tCSLS
tSCKH
tCSHH
tCSHS
SCK
tDS
SI
SO
tDH
MSB
LSB
MSB
HIGH-IMPEDANCE
Figure 13-2. Serial Output Timing
CS
tSCKH
tSCKL
tDIS
SCK
SI
tOH
tV
tV
SO
Figure 13-3. HOLD Timing – Serial Input
CS
SCK
tHHH
tHLS
tHLH
tHHS
HOLD
SI
SO
34
HIGH-IMPEDANCE
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
Figure 13-4. HOLD Timing – Serial Output
CS
SCK
tHHH
tHLS
tHLH
tHHS
HOLD
SI
tHLQZ
tHHQX
SO
Figure 13-5. WP Timing for Write Status Register Command When SPRL = 1
CS
tWPH
tWPS
WP
SCK
SI
0
MSB OF
WRITE STATUS REGISTER
OPCODE
SO
0
0
X
MSB
LSB OF
WRITE STATUS REGISTER
DATA BYTE
MSB OF
NEXT OPCODE
HIGH-IMPEDANCE
35
3668D–DFLASH–9/08
14. Ordering Information
14.1
Ordering Code Detail
AT 2 5DF 0 4 1A– SSHF –B
Atmel Designator
Shipping Carrier Option
B = Bulk (tubes)
Y = Trays
T = Tape and reel
Product Family
Operating Voltage
Blank = 2.7V minimum (2.7V to 3.6V)
F
= 2.3V minimum (2.3V to 3.6V)
Device Density
Device Grade
04 = 4-megabit
H = Green, NiPdAu lead finish, industrial
temperature range (-40°C to +85°C)
Interface
Package Option
M = 8-pad, 5 x 6 x 0.6 mm UDFN
SS = 8-lead, 0.150" wide SOIC
S = 8-lead, 0.208" wide SOIC
1 = Serial
Device Revision
14.2
Green Package Options (Pb/Halide-free/RoHS Compliant)
Ordering Code
Package
AT25DF041A-MH-Y
AT25DF041A-MH-T
8MA1
AT25DF041A-SSH-B
AT25DF041A-SSH-T
8S1
AT25DF041A-SH-B
AT25DF041A-SH-T
8S2
AT25DF041A-MHF-Y
AT25DF041A-MHF-T
8MA1
Lead Finish
Operating Voltage
fSCK (MHz)
NiPdAu
2.7V to 3.6V
70
Industrial
(-40°C to +85°C)
NiPdAu
AT25DF041A-SSHF-B
AT25DF041A-SSHF-T
Note:
Operation Range
2.3V to 3.6V
50
8S1
The shipping carrier option code is not marked on the devices.
Package Type
8MA1
8-pad, 5 x 6 x 0.6 mm Body, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8S2
8-lead, 0.208” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
36
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
15. Packaging Information
15.1
8MA1 – UDFN
E
C
Pin 1 ID
SIDE VIEW
D
y
TOP VIEW
A1
A
K
E2
0.45
8
Pin #1 Notch
(0.20 R)
(Option B)
7
Option A
Pin #1
Chamfer
(C 0.35)
1
2
e
D2
6
3
5
4
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
NOM
MAX
A
0.45
0.55
0.60
A1
0.00
0.02
0.05
b
0.35
0.40
0.48
C
b
L
BOTTOM VIEW
NOTE
0.152 REF
D
4.90
5.00
5.10
D2
3.80
4.00
4.20
E
5.90
6.00
6.10
E2
3.20
3.40
3.60
e
1.27
L
0.50
0.60
0.75
y
0.00
–
0.08
K
0.20
–
–
4/15/08
Package Drawing Contact:
[email protected]
TITLE
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
GPC
YFG
DRAWING NO.
8MA1
REV.
D
37
3668D–DFLASH–9/08
15.2
8S1 – JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
A1
SYMBOL
MIN
NOM
MAX
A1
0.10
–
0.25
NOTE
D
SIDE VIEW
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
3/17/05
R
38
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
REV.
8S1
C
AT25DF041A
3668D–DFLASH–9/08
AT25DF041A
15.3
8S2 – EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
SIDE VIEW
MAX
NOM
NOTE
A
1.70
A1
0.05
0.25
b
0.35
0.48
4
C
0.15
0.35
4
D
5.13
5.35
E1
5.18
5.40
E
7.70
8.26
L
0.51
0.85
θ
0°
e
Notes: 1.
2.
3.
4.
MIN
2.16
2
8°
1.27 BSC
3
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs aren't included.
Determines the true geometric position.
Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
Package Drawing Contact:
[email protected]
TITLE
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
GPC
STN
4/15/08
DRAWING NO. REV.
8S2
F
39
3668D–DFLASH–9/08
16. Revision History
Revision Level – Release Date
History
A – March 2007
Initial release.
B – November 2007
Changed part number ordering code to reflect NiPdAu lead finish.
- Changed AT25DF041A-SSU to AT25DF041A-SSH.
- Changed AT25DF041A-SU to AT25DF041A-SH.
- Changed AT25DF041A-MU to AT25DF041A-MH.
Added lead finish details to Ordering Information table.
Added 2.3V - 3.6V operating range.
Changed 8M1-A MLF package to 8MA1 UDFN package.
Added Ordering Code Detail.
C – March 2008
Updated 8MA1 UDFN package drawing with current revision (Rev. C).
D – September 2008
Removed “Preliminary” designation from datasheet
Changed Deep Power-Down Current values
– Increased typical value from 10 µA to 15 µA
– Increased maximum value from 15 µA to 20 µA
Updated Features section
Changed tVCSL minimum from 50 µs to 70 µs
Changed VPOR maximum from 2.5V to 2.2V
40
AT25DF041A
3668D–DFLASH–9/08
Headquarters
International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Atmel Europe
Le Krebs
8, Rue Jean-Pierre Timbaud
BP 309
78054 Saint-Quentin-enYvelines Cedex
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Atmel Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Technical Support
[email protected]
Sales Contact
www.atmel.com/contacts
Product Contact
Web Site
www.atmel.com
Literature Requests
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDITIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY
WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF
THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no
representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications
and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided
otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use
as components in applications intended to support or sustain life.
© 2008 Atmel Corporation. All rights reserved. Atmel ®, logo and combinations thereof, Everywhere You Are ®, DataFlash ® and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
3668D–DFLASH–9/08