QTP#124707:PROC TOUCH/CAPSENSE DEVICE FAMILY 0.18UM,TSMC S8DIN-5R, FAB 5 GSMC QUALIFICATION REPORT

Document No. 001-87327 Rev. *B
ECN #: 4752691
Cypress Semiconductor
Product Qualification Report
QTP# 124707 VERSION*B
May, 2015
PRoC Touch/Capsense Device Family
0.18um, TSMC & S8DIN-5R, Fab 5 GSMC
CYRF89535
PROC™ – TRUETOUCH
CYRF89435
PROC™ – CAPSENSE™
CYRF89235
PROC™ USB
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Reliability Engineer
Reviewed By:
Zhaomin Ji (ZIJ)
Reliability Manager
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP
Number
090706
104609
124707
Description of Qualification Purpose
Qualification of Capsense (CY8C20X36A, CY8C20X46A, CY8C20X66A,
CY8C20X96A) Device in Fab 5 GSMC on S8DIN-5R Process
Qualification of WUSB NL New Product (7C8935A) on CM018G Derivative
Process in TSMC Fab8
Qualification of ProC Touch/Capsense New Stacked-Die Device
(7C892350A/7C894350A/7C895350A) with qualified single GSMC
EnCoreV die (8C20226FK) and TSMC WUSB-NL die (7C8935BF)
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Page 2 of 15
Date
March 2010
Sep 2011
April 2013
Document No. 001-87327 Rev. *B
ECN #: 4752691
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify ProC Touch/Capsense Stacked-Die Device Family
Marketing Part #:
CYRF89535, CYRF89435, CYRF89235
Device Description:
ProC Touch/Capsense, 1.8V/3.3V, available in 68 QFN and 40 QFN Stacked Die
Cypress Division:
Cypress Semiconductor Corporation – Data Communications Division (DCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION – WUSB NL Die
Number of Metal Layers:
4
Metal Composition:
Metal 1: 250Å TiN / 4000AlCu / 250Å TiN
Metal 2 :250Å TiN / 4000AlCu / 250Å TiN
Metal 3 :250Å TiN / 4000AlCu / 250Å TiN
Metal 4: 500Å TiN / 20000AlCu / 250Å TiN
Generic Process Technology/Design Rule (-drawn): 0.18u / T-018-LO-DR-001
Gate Oxide Material/Thickness (MOS):
Thermal oxide / 40.8A for 1.8V Dev, 68A for 3.3V Dev
Name/Location of Die Fab (prime) Facility:
TSMC – Taiwan Fab8
Die Fab Line ID/Wafer Process ID:
CM018G
TECHNOLOGY/FAB PROCESS DESCRIPTION – EnCoreV die
Number of Metal Layers:
3
Metal Composition:
Passivation Type and Thickness:
Metal 1: 150A Ti/250A TiN/3200A Al/90A Ti/500A TiN
Metal 2: 150A Ti/250A TiN/3200A Al/90A Ti/500A TiN
Metal 3: 190A Ti/450A TiN/20000A Al/90A Ti/200A TiN
1000A TEOS/9000A Si3N4
Generic Process Technology/Design Rule (-drawn): 1P3M, 0.15 m
Gate Oxide Material/Thickness (MOS):
SiO2 / 110A & SiO2 / 32A
Name/Location of Die Fab (prime) Facility:
Fab 5 / GSMC, Shanghai China
Die Fab Line ID/Wafer Process ID:
S8DIN-5R
PACKAGE AVAILABILITY
PACKAGE
Wire Material
ASSEMBLY FACILITY SITE
QTP NUMBER
40L/68L QFN
Au
ASE-Taiwan (G)
124507
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating
Oxygen Rating Index: >28%
LT40B, LT68 Stacked-Die
Lead Frame Material:
40 and 68 – pin Quad Flat No Lead (QFN)
EME-G631 / Sumitomo
V-0 / UL-94
54 (typical) / 28 (min value)
Copper
Lead Finish, Composition / Thickness:
Pure Sn
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Hitachi
Die Attach Material:
FH-900
Die Attach Method:
Film
Bond Diagram Designation:
001-81247, 001-81302
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.8 mil
Package Cross Section Yes/No:
LT 68: 15°C/W
LT40: 21°C/W
No
Name/Location of Assembly (prime) facility:
ASE-Taiwan (G)
MSL Level
3
Reflow Profile
260C
Thermal Resistance Theta JA °C/W:
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE-Taiwan (G)
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
High Temperature Operating Life
Early Failure Rate (EFR)
Dynamic Operating Condition, 150C, 2.07/2.1V/3.96V, 48 Hours
JESD22-A108
P
High Temperature Operating Life
Latent Failure Rate (LFR)
Dynamic Operating Condition, 150C, 2.07V/2.1V/3.96V, 500 Hours
JESD22-A108
P
High Temperature Steady State life
Static Operating Condition,150°C, 2.07V/5.75V, Vcc Max
JESD22-A108
P
Low Temperature Operating Life
Dynamic Operating Condition,-30°C, 2.1V/4.3V
JESD22-A108
P
High Temperature Storage
150C, 1000 Hours, JESD22-A103
P
Data Retention
JESD22-A103
150°C ± 5°C No Bias
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Temperature Cycle
MIL-STD-883, Method 1010, Condition C, -65 C to 150 C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
JESD22-A102, 121 C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
JEDEC STD 22-A110: 130C, 85%RH, 3.63V/3.96V/5.25V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
200C, 4hrs
MIL-STD-883, Method 2011
2,200V (Non-RF), JESD22-A114
500V (RF)
500V (Non-RF), JESD22-C101
200V (RF)
200V
JESD22-A115
Pressure Cooker
High Accelerated Stress Test
(HAST)
Acoustic (M3)
Aged Bond Strength
Electrostatic Discharge
Human Body Model (ESD-HBM)
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrostatic Discharge
Machine Model (ESD-MM)
Static Latch-up
P
P
P
P
P
P
P
P
± 140mA, 125C, JESD78
P
Constructional Analysis
Criteria: Meet external and internal characteristics of Cypress package
P
Ball Shear
JESD22-B116, Cpk : 1.33, Ppk : 1.66
P
Bond Pull
MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66
P
MIL-STD-883 – Method 2012
P
X-Ray
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Page 5 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate1
4,617 Devices
0
N/A
N/A
0 ppm
High Temperature Operating Life1, 2
Long Term Failure Rate
851,000 DHRs
0
0.7
170
6 FIT
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 6 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 104609
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYRF8935
NA
Q6B401.1
L-Korea
COMP
15
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
15
0
CYRF8935
NA
Q3A653.1
L-Korea
COMP
15
0
CYRF8935
NA
Q3A652
L-Korea
COMP
3
0
CYRF8935
NA
Q3A651
L-Korea
COMP
3
0
STRESS: AGED BOND
STRESS: CONSTRUCTIONAL ANALYSIS
CYRF8935
NA
Q3A652
L-Korea
COMP
5
0
CYRF8935
NA
Q3A651
L-Korea
COMP
5
0
STRESS: ESD-CHARGED DEVICE MODEL, (200V) – RF
CYRF8935
NA
Q6B401.1
L-Korea
COMP
9
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
9
0
STRESS: ESD-CHARGED DEVICE MODEL, (500V) – NON RF
CYRF8935
NA
Q6B401.1
L-Korea
COMP
9
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
9
0
STRESS: ESD-HUMAN BODY MODEL, (500V) – RF
CYRF8935
NA
Q6B401.1
L-Korea
COMP
8
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
8
0
STRESS: ESD-HUMAN BODY MODEL, (2200V) – RF
CYRF8935
NA
Q6B401.1
L-Korea
COMP
8
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
8
0
STRESS: HI-ACCEL STRESS TEST (130C, 85%RH, 3.96V), PRE COND 192 HR 30C/60%RH (MSL3)
CYRF8935
NA
Q6B401.1
L-Korea
128
77
0
CYRF8935
NA
Q6B402.1
L-Korea
128
77
0
STRESS: HIGH TEMPERATURE STORAGE, 150C
CYRF8935
NA
Q6B401.1
L-Korea
500
77
0
CYRF8935
NA
Q6B401.1
L-Korea
1000
77
0
Company Confidential
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Page 7 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 104609
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.07V)
7C39480AH
9107636
610107389
G-Taiwan
80
77
0
7C39480AH
9107636
610107389
G-Taiwan
168
73
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.96V)
CYRF8935
NA
Q6B401.1
L-Korea
48
500
0
CYRF8935
NA
Q6B402.1
L-Korea
48
499
0
CYRF8935
NA
Q3A653.1
L-Korea
48
500
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.96V)
CYRF8935
NA
Q6B401.1
L-Korea
80
116
0
CYRF8935
NA
Q6B401.1
L-Korea
500
116
0
CYRF8935
NA
Q6B402.1
L-Korea
80
113
0
CYRF8935
NA
Q6B402.1
L-Korea
500
110
0
CYRF8935
NA
Q3A653.1
L-Korea
80
115
0
CYRF8935
NA
Q3A653.1
L-Korea
500
115
0
STRESS: PRE/POST LFR ELECTRICAL ASSESSMENT
CYRF8935
NA
Q6B401.1
L-Korea
80
30
0
CYRF8935
NA
Q6B402.1
L-Korea
80
30
0
CYRF8935
NA
Q3A653.1
L-Korea
80
30
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3)
CYRF8935
NA
Q6B401.1
L-Korea
168
77
0
CYRF8935
NA
Q6B401.1
L-Korea
288
77
0
CYRF8935
NA
Q6B402.1
L-Korea
168
77
0
CYRF8935
NA
Q6B402.1
L-Korea
288
77
0
G-Taiwan
500
48
0
Q6B401.1
L-Korea
COMP
3
0
Q6B401.1
L-Korea
COMP
10
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 4.3V
7C39480AH
9052411
340100001
STRESS: THERMAL JUNCTION MEASUREMENT
CYRF8935
NA
STRESS: SEM X-SECTION/STEM
CYRF8935
NA
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Page 8 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 104609
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP TESTING, 125C, +/-140mA
CYRF8935
NA
Q6B401.1
L-Korea
COMP
6
0
CYRF8935
NA
Q6B402.1
L-Korea
COMP
6
0
STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C)
CYRF8935
NA
Q6B401.1
L-Korea
500
77
0
CYRF8935
NA
Q6B401.1
L-Korea
1000
77
0
CYRF8935
NA
Q6B401.1
L-Korea
1500
77
0
CYRF8935
NA
Q6B402.1
L-Korea
500
77
0
CYRF8935
NA
Q6B402.1
L-Korea
1000
77
0
CYRF8935
NA
Q6B402.1
L-Korea
1500
77
0
CYRF8935
NA
Q3A653.1
L-Korea
500
77
0
CYRF8935
NA
Q3A653.1
L-Korea
1000
77
0
CYRF8935
NA
Q3A653.1
L-Korea
1500
77
0
L-Korea
COMP
3
0
STRESS: THERMAL JUNCTION MEASUREMENT
CYRF8935
NA
Q6B401.1
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Page 9 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 090706
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
COMP
3
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
COMP
3
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
COMP
3
0
STRESS: AGE BOND STRENGTH
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
1000
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
1446
77
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
80
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
1000
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
1000
80
0
CY8C20566A (8C205665A) 4926959
610926865
CML-R
168
77
0
CY8C20566A (8C205665A) 4926959
610926865
CML-R
524
77
0
CY8C20566A (8C205665A) 4934292
610931057
CML-R
168
78
0
CY8C20566A (8C205665A) 4938497
610935104
CML-R
168
77
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
9
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
9
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
9
0
STRESS:
ESD-MACHINE MODEL, (200V)
CY8C20236A (8C202662B) 5123122
611141575
Korea-L
COMP
5
0
CY8C20236A (8C202662B) 5125016
611142867
PHIL-MB
COMP
5
0
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Page 10 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 090706
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
8
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
8
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
8
0
STRESS: STATIC LATCH-UP (125C, 8.25V, 140mA)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
6
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
6
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
6
0
CML-RA
5
0
STRESS: DYNAMIC LATCH-UP (150C, 9.0V)
CY8C20466A (8C204665A) 4926959
610927071
COMP
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
48
1000
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
48
1000
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
48
1000
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5.5V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
80
400
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
399
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
444
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
80
400
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
400
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
80
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
168
77
0
500
83
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY8C20566A (8C205665A) 4926959
610926865
CML-R
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Page 11 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 090706
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias
CY8C20236A (8C202662B) 4040296
611049683
MB-PHIL
625
22
0
CY8C20236A (8C202662B) 4040296
611049683
MB-PHIL
1000
78
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4948407GSMC610946935
CML-RA
128
80
0
CY8C20466A (8C204665A) 4948407ª2
610947114
CML-RA
128
80
0
CY8C20466A (8C204665A) 4948407ª3
611002233
CML-RA
128
80
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4948407GSMC610946935
CML-RA
168
80
0
CY8C20466A (8C204665A) 4948407ª2
610947114
CML-RA
168
80
0
CY8C20466A (8C204665A) 4948407ª3
611002233
CML-RA
168
80
0
STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
76
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
80
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
1000
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
80
0
610931047
CML-RA
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8C20066A (8C20066AC) 4934292
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 124707
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
COMP
15
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
COMP
15
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
COMP
15
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CYRF89535 (7C89535A)
8222014
611223112
ASE-G
48
118
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CYRF89535 (7C89535A)
8222014
611223112
ASE-G
80
118
0
CYRF89535 (7C89535A)
8222014
611223112
ASE-G
500
118
0
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CYRF89535 (7C89535A)
8222014
611223112
ASE-G
COMP
9
0
CYRF89535 (7C89535A)
8222017
611223110
ASE-G
COMP
9
0
CYRF89535 (7C89535A)
8222016
611223111
ASE-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114 (2,200V)
CYRF89535 (7C89535A)
8222014
611223112
ASE-G
COMP
8
0
CYRF89535 (7C89535A)
8222017
611223110
ASE-G
COMP
8
0
CYRF89535 (7C89535A)
8222016
611223111
ASE-G
COMP
8
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR 30C/60%RH (MSL3)
CYRF89535 (7C89535A)
8222016
611226681
ASE-G
128
56
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
168
79
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
288
79
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
168
79
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
288
79
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Reliability Test Data
QTP #: 124707
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
500
79
0
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
1000
79
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
500
79
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
1000
72
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
500
79
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
1000
79
0
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
COMP
15
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
COMP
15
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
COMP
15
0
8222014
611223112
ASE-G
COMP
5
0
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
COMP
100
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
COMP
100
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
COMP
100
0
CYRF89535 (7C895350A)
8222014
611235708
ASE-G
COMP
100
0
CYRF89535 (7C895350A)
8222017
611235709
ASE-G
COMP
100
0
CYRF89535 (7C895350A)
8222016
611235710
ASE-G
COMP
100
0
STRESS: X-RAY
STRESS: AGE BOND STRENGTH
CYRF89535 (7C89535A)
STRESS: BALL SHEAR
STRESS: BOND PULL
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 15
Document No. 001-87327 Rev. *B
ECN #: 4752691
Document History Page
Document Title:
QTP#124707: PROC TOUCH/CAPSENSE DEVICE FAMILY 0.18UM,TSMC & S8DIN-5R, FAB 5
GSMC QUALIFICATION REPORT
001-87327
Document Number:
Rev. ECN
Orig. of
No.
Change
**
3982579
JYF
*A
4362963
JYF
*B
4752691
JYF
Description of Change
Initial Spec Release
Sunset review:
Updated QTP title page;
Updated TCT, PCT, Acoustic, HAST, HTSSL and LTOL in Reliability
Tests Performed table for template alignment.
Sunset review:
Updated reference for Reliability Director.
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 15