Document No. 001-74158 Rev. *D ECN #: 4583556 Cypress Semiconductor Product Qualification Report QTP# 104609 VERSION*D December, 2014 Wireless USB Family CYRF8935 CYRF8935-4XWC 0.18um, TSMC WIRELESSUSB™ NL 2.4 GHZ LOWPOWER RADIO WIRELESSUSB™ NL 2.4-GHZ LOWPOWER RADIO DIE FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda (JYF) Reliability Engineer Reviewed By: Rene Rodgers (RT) Reliability Manager Approved By: Richard Oshiro (RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 104609 Qualification of WUSB NL New Product (7C8935A) on CM018G Derivative Process in TSMC Fab8 Sep 2011 113403 Qualification of Device 7C8935 LQ24 New Package Option on CM018G Derivative Process in TSMC Fab8 Dec 2011 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CYRF8935 Family on CM018G Derivative Process in TSMC Fab8 Marketing Part #: CYRF8935 Device Description: Wireless USB ™ NL 2.4 GHZ Low-Power Radio Cypress Division: Cypress Semiconductor Corporation – Data Communications Division (DCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 250Å TiN / 4000AlCu / 250Å TiN Metal 2 :250Å TiN / 4000AlCu / 250Å TiN Metal 3 :250Å TiN / 4000AlCu / 250Å TiN Metal 4: 500Å TiN / 20000AlCu / 250Å TiN Generic Process Technology/Design Rule (µ-drawn): 0.18u / T-018-LO-DR-001 Gate Oxide Material/Thickness (MOS): Thermal oxide / 40.8A for 1.8V Dev, 68A for 3.3V Dev Name/Location of Die Fab (prime) Facility: TSMC – Taiwan Fab8 Die Fab Line ID/Wafer Process ID: CM018G PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 24 QFN ASE-Taiwan (G) Die Sales N/A Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: LT32B Lead Frame Material: 32 – Quad Flat No Lead (QFN) G700 / Sumitomo Cu Lead Finish, Composition / Thickness: NiPdAu-Ag Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Sumitomo Die Attach Material: CRM 1085 Die Attach Method: Epoxy Bond Diagram Designation: N/A Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8 mil Thermal Resistance Theta JA °C/W: 36.93 Package Cross Section Yes/No: No Name/Location of Assembly (prime) facility: Amkor-K1 MSL Level 3 Reflow Profile 260C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Mold Compound Alpha Emission Rate: Oxygen Rating Index: >28% Lead Frame Designation: LQ24A 24 – Quad Flat No Lead (QFN) G631 / Sumitomo V-0 / UL94 N/A 54 (typical) / 28 (Min. value) FMP Lead Frame Material: Copper/PPF Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Hitachi Die Attach Material: EN4900 Die Attach Method: Epoxy Bond Diagram Designation: 001-71393 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8 mil Thermal Resistance Theta JA °C/W: 36.93 Package Cross Section Yes/No: No Assembly Process Flow: 49-41999 Name/Location of Assembly (prime) facility: ASE-G MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: eSilicon Note: Please contact a Cypress Representative for other package availability. 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Page 5 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Storage JESD22-A103: 150 C, no bias P High Temperature Operating Life Early Failure Rate (EFR) Dynamic Operating Condition, 150°C, 3.96V, 48 Hours JESD22-A108 P High Temperature Operating Life Latent Failure Rate (LFR) Dynamic Operating Condition, 150°C, 3.96V, 500 Hours JESD22-A108 P High Temperature Steady State life Static Operating Condition, 150°C, 2.07V, Vcc Max JESD22-A-108 P Low Temperature Operating Life Dynamic Operating Condition, -30°C, 4.3V JESD22-A108 P Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 0hrs, 80hrs P Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P High Accelerated Stress Test (HAST) Pressure Cooker JEDEC STD 22-A110: 130°C, 85% RH, 3.96V Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C JESD22-A102:121°C /100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P P Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V (Non-RF), JESD22-A114 500V (RF) P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V (Non-RF), JESD22-C101 200V (RF) P Static Latch-up ± 140mA, 125°C, JESD78 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P SEM X-Section XY audit at center wafer and edge wafer P Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Bond Pull MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66 X-Ray MIL-STD-883 – 2012 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 P P Document No. 001-74158 Rev. *D ECN #: 4583556 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,499 Devices 0 N/A N/A 0 ppm 0 0.7 170 32 FIT 170,740 DHRs Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CYRF8935 NA Q6B401.1 L-Korea COMP 15 0 CYRF8935 NA Q6B402.1 L-Korea COMP 15 0 CYRF8935 NA Q3A653.1 L-Korea COMP 15 0 CYRF8935 NA Q3A652 L-Korea COMP 3 0 CYRF8935 NA Q3A651 L-Korea COMP 3 0 STRESS: AGED BOND STRESS: CONSTRUCTIONAL ANALYSIS CYRF8935 NA Q3A652 L-Korea COMP 5 0 CYRF8935 NA Q3A651 L-Korea COMP 5 0 STRESS: ESD-CHARGED DEVICE MODEL, (200V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 9 0 CYRF8935 NA Q6B402.1 L-Korea COMP 9 0 STRESS: ESD-CHARGED DEVICE MODEL, (500V) – NON RF CYRF8935 NA Q6B401.1 L-Korea COMP 9 0 CYRF8935 NA Q6B402.1 L-Korea COMP 9 0 STRESS: ESD-HUMAN BODY MODEL, (500V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 8 0 CYRF8935 NA Q6B402.1 L-Korea COMP 8 0 STRESS: ESD-HUMAN BODY MODEL, (2200V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 8 0 CYRF8935 NA Q6B402.1 L-Korea COMP 8 0 STRESS: HI-ACCEL STRESS TEST (130C, 85%RH, 3.96V), PRE COND 192 HR 30C/60%RH (MSL3) CYRF8935 NA Q6B401.1 L-Korea 128 77 0 CYRF8935 NA Q6B402.1 L-Korea 128 77 0 STRESS: HIGH TEMPERATURE STORAGE, 150C CYRF8935 NA Q6B401.1 L-Korea 500 77 0 CYRF8935 NA Q6B401.1 L-Korea 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.07V) 7C39480AH 9107636 610107389 G-Taiwan 80 77 0 7C39480AH 9107636 610107389 G-Taiwan 168 73 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.96V) CYRF8935 NA Q6B401.1 L-Korea 48 500 0 CYRF8935 NA Q6B402.1 L-Korea 48 499 0 CYRF8935 NA Q3A653.1 L-Korea 48 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.96V) CYRF8935 NA Q6B401.1 L-Korea 80 116 0 CYRF8935 NA Q6B401.1 L-Korea 500 116 0 CYRF8935 NA Q6B402.1 L-Korea 80 113 0 CYRF8935 NA Q6B402.1 L-Korea 500 110 0 CYRF8935 NA Q3A653.1 L-Korea 80 115 0 CYRF8935 NA Q3A653.1 L-Korea 500 115 0 STRESS: PRE/POST LFR ELECTRICAL ASSESSMENT CYRF8935 NA Q6B401.1 L-Korea 80 30 0 CYRF8935 NA Q6B402.1 L-Korea 80 30 0 CYRF8935 NA Q3A653.1 L-Korea 80 30 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) CYRF8935 NA Q6B401.1 L-Korea 168 77 0 CYRF8935 NA Q6B401.1 L-Korea 288 77 0 CYRF8935 NA Q6B402.1 L-Korea 168 77 0 CYRF8935 NA Q6B402.1 L-Korea 288 77 0 G-Taiwan 500 48 0 Q6B401.1 L-Korea COMP 3 0 Q6B401.1 L-Korea COMP 10 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 4.3V 7C39480AH 9052411 340100001 STRESS: THERMAL JUNCTION MEASUREMENT CYRF8935 NA STRESS: SEM X-SECTION/STEM CYRF8935 NA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING, 125C, +/-140mA CYRF8935 NA Q6B401.1 L-Korea COMP 6 0 CYRF8935 NA Q6B402.1 L-Korea COMP 6 0 STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C) CYRF8935 NA Q6B401.1 L-Korea 500 77 0 CYRF8935 NA Q6B401.1 L-Korea 1000 77 0 CYRF8935 NA Q6B401.1 L-Korea 1500 77 0 CYRF8935 NA Q6B402.1 L-Korea 500 77 0 CYRF8935 NA Q6B402.1 L-Korea 1000 77 0 CYRF8935 NA Q6B402.1 L-Korea 1500 77 0 CYRF8935 NA Q3A653.1 L-Korea 500 77 0 CYRF8935 NA Q3A653.1 L-Korea 1000 77 0 CYRF8935 NA Q3A653.1 L-Korea 1500 77 0 L-Korea COMP 3 0 STRESS: THERMAL JUNCTION MEASUREMENT CYRF8935 NA Q6B401.1 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 Reliability Test Data QTP #: 113403 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CYRF8935A 8135007 611144527 G-Taiwan COMP 10 0 CYRF8935A 8135007 611144527M G-Taiwan COMP 10 0 CYRF8935A 8135007 611144527M1 G-Taiwan COMP 10 0 Failure Mechanism STRESS: BOND PULL STRESS: CONSTRUCTIONAL ANALYSIS CYRF8935A 8135007 611144527 G-Taiwan COMP 5 0 CYRF8935A 8135007 611144527M G-Taiwan COMP 5 0 CYRF8935A 8135007 611144527M1 G-Taiwan COMP 5 0 STRESS: DIE EDGE TO CENTER MEASUREMENT CYRF8935A 8135007 611144527 G-Taiwan COMP 30 0 CYRF8935A 8135007 611144527M G-Taiwan COMP 30 0 CYRF8935A 8135007 611144527M1 G-Taiwan COMP 30 0 G-Taiwan COMP 9 0 G-Taiwan COMP 8 0 STRESS: ESD-CHARGED DEVICE MODEL, (500V) CYRF8935A 8135007 611144527 STRESS: ESD-HUMAN BODY MODEL, (2200V) CYRF8935A 8135007 611144527 STRESS: STATIC LATCH-UP TESTING, 125C, +/-140mA CYRF8935A 8135007 611144527 G-Taiwan COMP 6 0 CYRF8935A 8135007 611144527 G-Taiwan COMP 30 0 CYRF8935A 8135007 611144527M G-Taiwan COMP 30 0 CYRF8935A 8135007 611144527M1 G-Taiwan COMP 30 0 STRESS: X-RAY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-74158 Rev. *D ECN #: 4583556 Document History Page Document Title: Document Number: Rev. ECN No. ** 3442166 *A 3471338 QTP 104609: WIRELESS USB FAMILY (CYRF8935), 0.18UM, TSMC 001-74158 Orig. of Change NSR NSR *B 3685191 NSR *C 4202661 JYF *D 4583556 JYF Description of Change Initial Spec Release Added QTP 113403 data. Corrected Assembly site in QTP 104609 data from L-Taiwan to LKorea. Added CYRF8935-4XWC part number in front page in reference to memo DEPM-145. Added Die sales in the package availability. Removed the reference Cypress spec for Constructional Analysis and bond pull tests and replace with the industry standards. Updated Reliability Engineer contact person in QTP title page; Complete re-write of Reliability Tests Performed table for template alignment. Sunset review: Updated QTP title page for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12