TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 200 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 26.0 Adc ID2 16.0 Adc Ptl 150 (1) W Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Rds(on) Operating & Storage Temperature Top, Tstg 0.100 (2) -55 to +150 Ω °C TO-254AA JANSR2N7269, JANSF2N7269 See Figure 1 Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 12Vdc, ID = 16.0A PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 1.0mA VDS ≥ VGS, ID = 1.0mA, Tj = +125°C VDS ≥ VGS, ID = 1.0mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 200V, Tj = +125°C VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 IDSS3 25 1.0 0.25 µAdc mAdc mAdc rDS(on)1 rDS(on)2 0.100 0.110 Ω Ω rDS(on)3 0.200 Ω VSD 1.4 Vdc Static Drain-Source On-State Resistance VGS = 12V, ID = 16.0A pulsed VGS = 12V, ID = 26.0A pulsed Tj = +125°C VGS = 12V, ID = 16.0A pulsed Diode Forward Voltage VGS = 0V, ID = 26.0A pulsed 7T4-LDS-0122 Rev. 2 (101017) Max. Unit Vdc 4.0 Vdc 5.0 U-PKG (SMD-1) (TO-267AB) JANSR2N7269U, JANSF2N7269U See Figure 2 Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Min. Max. Qg(on) Qgs Qgd VGS = 12V, ID = 26.0A VDS = 100V 170 30 60 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 26.0A, VGS = 12Vdc, Gate drive impedance = 2.35Ω, VDD = 50Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 26.0A Min. Max. td(on) tr td(off) tf 33 140 140 140 trr 820 Unit ns ns POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 VGS(th)1 VGS(th)1 2.0 1.25 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 1.0mA MSR VDS ≥ VGS, ID = 1.0mA MSF Gate Current VGS = ±20V, VDS = 0V IGSS1 Drain Current VGS = 0V, VDS = 160V MSR VGS = 0V, VDS = 160V MSF IDSS1 Static Drain-Source On-State Voltage VGS = 12V, ID = 16.0A pulsed MSR VGS = 12V, ID = 16.0A pulsed MSF Diode Forward Voltage VGS = 0V, ID = 26.0A pulsed Max. Unit Vdc 4.0 4.5 Vdc ±100 nAdc 25 50 µAdc VDS(on) 1.6 2.48 Vdc VSD 1.4 Vdc NOTE: (3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (160V) conditions. 7T4-LDS-0122 Rev. 2 (101017) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 Single Event Effect (SEE) Characteristics: Heavy Ion testing of the 2N7269 device was completed by similarity of die structure to the 2N7262. The 2N7262 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown: 2N7269 (2N7262) TAMU Ar LET=8.3 Range =192um Total Energy=531MeV 220 200 180 TAMU Kr LET=27.8 Range =134um Total Energy=1032MeV Drain Bias, V 160 140 120 100 TAMU Ag LET=42.2 Range =119um Total Energy=1289MeV 80 60 40 20 0 0 -5 -10 -15 -20 -25 TAMU Au LET=85.4 Range =118um Total Energy=2247MeV Gate Bias, V It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. 7T4-LDS-0122 Rev. 2 (101017) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 Figure 1: Case Outline and Pin Configuration for JANSR2N7269 & JANSF2N7269 7T4-LDS-0122 Rev. 2 (101017) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Dimensions SMD-1 Symbol Inches BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Term 1 Term 2 Term 3 Min .620 .445 Max .630 .455 .142 .010 .020 .410 .420 .152 .162 .210 BSC .105 BSC .370 .380 .135 .145 .030 .035 Millimeters Min Max 15.75 16.00 11.30 11.56 3.60 0.26 0.50 10.41 10.67 3.86 4.11 5.33 BSC 2.67 BSC 9.40 9.65 3.43 3.68 0.76 0.89 Drain Gate Source Figure 2: Case Outline and Pin Configuration for JANSR2N7269U & JANSF2N7269U 7T4-LDS-0122 Rev. 2 (101017) Page 5 of 5