PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF (typ.)* = 2.4V 4 IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A 2 1 CATHODE trr (typ.) = 28ns 3 di(rec) M /dt (typ.)*= 85A /µs ANODE 2 Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count TO-247AC (Modified) Description International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Absolute Maximum Ratings VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max 1200 8.0 130 32 73.5 29 - 55 to 150 Units V A W °C * 125°C www.irf.com 1 9/16/04 HFA08PB120PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VBR Parameter Min Typ Max Units Test Conditions Cathode Anode Breakdown 1200 - - V IR = 100µA - 2.6 3.3 V IF = 8.0A Voltage VFM Max. Forward Voltage - 3.4 4.3 IF = 16A - 2.4 3.1 IF = 8.0A, TJ = 125°C Max. Reverse Leakage - 0.31 10 Current - 135 1000 CT Junction Capacitance - 11 20 pF VR = 200V LS Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body IRM µA See Fig. 1 VR = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x VR RatedD R See Fig. 3 Rated Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr Min Typ Max Units - 28 - - 63 95 TJ = 25°C IF = 8.0A - 106 160 TJ = 125°C VR = 200V - 4.5 8.0 TJ = 25°C di f /dt = 200A/µs - 6.2 11 - 140 380 - 335 880 di(rec)M /dt1 Peak Rate of Recovery - 133 - di(rec)M /dt2 Current During tb - 85 - trr1 Reverse Recovery Time See Fig. 5, 10 trr2 IRRM1 IRRM2 Qrr1 Qrr2 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 See Fig. 8 ns Test Conditions A IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 125°C nC TJ = 25°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Min Typ Max Units Tlead Lead Temperature - - 300 °C RthJC Thermal Resistance, Junction to Case - - 1.7 k/W RthJA Thermal Resistance, Junction to Ambient - - 40 RthCS Thermal Resistance, Case to Heat Sink - 0.25 - Wt Weight - 6.0 - Mounting Torque g - 0.21 - (oz) 6.0 - 12 Kg-cm 5.0 - 10 lbfin 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA08PB120PbF 1000 T = 150˚C J 125˚C 100 100˚C 10 1 0.1 0.01 25˚C 0 300 600 900 1200 Reverse Voltage - VR (V) Fig. 2 - Typ. Values Of Reverse Current Vs. Reverse Voltage 10 100 Junction Capacitance - CT (pF) Instantaneous Forward Current - I F (A) Reverse Current - I R (µA) 100 T = 150˚C J T = 125˚C J T = 25˚C J 1 0 2 4 6 8 Fig. 1 - Max. Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 10 1 10 Forward Voltage Drop - VFM (V) 1 T = 25˚C J 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (Seconds) 0.1 1 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 HFA08PB120PbF 20 160 V R= 160V T J = 125˚C T J = 25˚C IF = 8 A IF = 4 A 140 16 IF = 8 A IF = 4 A 12 100 Irr ( A) trr ( ns ) 120 80 8 60 4 40 VR = 160V TJ = 125˚C TJ = 25˚C 20 100 0 100 1000 1000 di F /dt (A/µs ) di F /dt (A/µs ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt Fig. 6 - Typical Recovery Current Vs. dif /dt 1200 1000 VR = 160V TJ = 125˚C TJ = 25˚C 1000 di(REC) M/dt (A/µs ) IF = 8 A IF = 4 A 800 Qrr ( nC ) IF = 8 A IF = 4 A 600 400 100 200 VR = 160V TJ = 125˚C TJ = 25˚C 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. dif /dt 4 10 100 1000 di F /dt (A/µs ) Fig. 7 - Typical di(REC) M/dt vs. dif /dt www.irf.com HFA08PB120PbF Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 t rr IF tb ta 0 Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 di diFf /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA08PB120PbF Outline Table Conforms to JEDEC Outline TO-247AC Dimensions in millimeters and (inches) Ordering Information Table Device Code HF A 08 1 2 3 1 - Hexfred Family 2 - Process Designator PB 120 5 4 A = Electron Irradiated B = Platinum Diffused 3 - Current Rating 4 - Package Outline (08 = 8A) (PB = TO-247, 2 pins) 5 - Voltage Rating (120 = 1200V) Note: Marking "P" indicates Lead-Free. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 6 www.irf.com