IRF IRF530L

PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS =100V
RDS(on) = 0.11Ω
G
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
D 2 P ak
T O -2 6 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current•9.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
17
12
60
3.8
79
0.53
± 20
150
A
7.9
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.9
40
°C/W
1
5/13/98
IRF530NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
27
37
25
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA…
0.11
Ω
VGS = 10V, ID = 9.0A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 9.0A…
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, T J = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
44
ID = 9.0A
6.2
nC
VDS = 80V
21
VGS = 10V, See Fig. 6 and 13 „…
–––
VDD = 50V
–––
ID = 9.0A
ns
–––
RG = 12Ω
–––
RD = 5.5Ω, See Fig. 10 „…
Between lead,
7.5 ––– nH
and center of die contact
640 –––
VGS = 0V
160 –––
pF
VDS = 25V
88 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) …
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
––– ––– 60
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 9.0A, VGS = 0V „
––– 130 190
ns
TJ = 25°C, I F = 9.0A
––– 650 970
nC
di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.1mH
… Uses IRF530N data and test conditions
RG = 25W, IAS = 9.0A. (See Figure 12)
ƒ ISD ≤ 9.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
www.irf.com
IRF530NS/L
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5 V
20 µ s P U LS E W ID TH
T J = 2 5°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
1
10
A
10
4 .5 V
2 0µ s P U L S E W ID T H
T J = 17 5°C
1
100
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 2. Typical Output Characteristics
3.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
T J = 2 5 °C
T J = 1 75 °C
10
V DS = 5 0V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
10
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
A
100
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
10
A
I D = 1 5A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF530NS/L
V GS
C iss
C rs s
C o ss
C , Capacitance (pF)
1000
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-S ource V oltage (V )
1200
I D = 9.0 A
V D S = 80 V
V D S = 50 V
V D S = 20 V
16
C iss
800
12
600
C oss
400
C rss
200
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
8
0
100
V D S , D rain-to-S ourc e V oltage (V )
15
20
25
30
35
40
A
45
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , Reverse D rain C urrent (A)
10
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 1 75 °C
10
T J = 25 °C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
A
1.6
100
10µ s
10
100µ s
1m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10m s
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF530NS/L
RD
VDS
20
VGS
D.U.T.
RG
+
-VDD
I D , Drain Current (A)
15
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF530NS/L
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanche E nergy (m J)
350
TO P
300
B O TTO M
ID
3.7 A
6.4A
9 .0 A
250
200
150
100
50
0
V D D = 25 V
25
A
50
75
100
125
150
175
VDS
S tarting T J , J unc tion T em perature (°C )
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF530NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRF530NS/L
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
www.irf.com
IRF530NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
www.irf.com
9
IRF530NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5.4 2 (.6 0 9 )
1 5.2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0.9 0 (.4 2 9 )
1 0.7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IRE CTIO N
13 .5 0 (.53 2)
12 .8 0 (.50 4)
27 .40 (1.0 79)
23 .90 (.94 1)
4
3 30 .0 0
(14.1 73)
MAX.
NO TES :
1. C O M F O R M S T O E IA-4 18.
2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R .
3. D IM E N S IO N M E A SU R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E.
60.00 (2.3 62)
M IN .
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30 .40 (1.19 7)
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
10
www.irf.com