Previous Datasheet Index Next Data Sheet PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.5V G @VGE = 15V, I C = 6.0A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 10 6.0 20 20 10 ±20 5.0 60 24 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA RθJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — — — 2 (0.07) 2.1 40 80 — Units °C/W g (oz) ** When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994. C-855 To Order Revision 1 Previous Datasheet Index Next Data Sheet IRGBC20K-S Electrical Characteristics @ T J = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Switching Characteristics @ T J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.37 — V/°C VGE = 0V, I C = 1.0mA — 2.4 3.5 IC = 6.0A V GE = 15V — 3.6 — V IC = 10A See Fig. 2, 5 — 2.9 — IC = 6.0A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 1.9 3.3 — S VCE = 100V, I C = 6.0A — — 250 µA VGE = 0V, V CE = 600V — — 1000 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V = 25°C (unless otherwise specified) Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units 17 26 4.3 6.8 nC 6.4 11 29 — 18 — ns 58 90 120 195 0.11 — 0.13 — mJ 0.24 0.31 — — µs 28 22 200 145 0.50 7.5 360 45 4.7 — — — — — — — — — ns mJ nH pF Conditions IC = 6.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 6.0A, V CC = 480V VGE = 15V, R G = 50Ω Energy losses include "tail" See Fig. 9, 10, 11, 14 VCC = 360V, T J = 125°C VGE = 15V, R G = 50Ω, VCPK < 500V TJ = 150°C, IC = 6.0A, V CC = 480V VGE = 15V, R G = 50Ω Energy losses include "tail" See Fig. 10, 14 Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 50Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-856 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGBC20K-S 15 F o r b o th : 12 Load Current (A) T ria n g u la r w a v e : D u ty c yc le : 5 0 % TJ = 1 2 5 ° C T s ink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 1 4 W C la m p v o lta g e : 8 0 % o f ra te d 9 S q u a re w a v e : 6 0% o f ra te d v o lta g e 6 3 Ide al d iod es A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 I C , C ollec tor-to -E m itter C u rre nt (A ) I C , C ollector-to-E mitte r C urren t (A ) 100 TJ = 2 5 °C 10 TJ = 1 50 °C 1 10 TJ = 25 °C V G E = 15V 2 0µ s P U LS E W ID TH 0.1 0.1 1 T J = 15 0°C V C C = 1 00 V 5 µs P UL S E W ID TH 1 10 5 10 15 V G E , G ate-to-E m itter V olta g e (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-857 To Order 20 Previous Datasheet Index Next Data Sheet IRGBC20K-S 5.0 V G E = 1 5V V C E , C o lle c to r-to -E m itte r V o lta g e (V ) M aximu m D C C olle ctor Cu rrent (A ) 10 8 6 4 2 V G E = 1 5V 8 0µ s P U LS E W ID TH I C = 1 2A 4.0 3.0 IC = 6.0A 2.0 I C = 3.0 A 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 T C , C as e Te m p e ra ture (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJ C ) 10 1 D = 0.50 0 .2 0 0 .10 PD M 0.0 5 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-858 To Order 10 Previous Datasheet Index Next Data Sheet IRGBC20K-S 700 500 VG E , G ate -to-E mitter V oltage (V ) 600 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 80 V I C = 6.0 A 16 Cies 12 400 Coes 300 200 Cres 100 0 8 4 0 1 10 1 00 0 4 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 0.25 12 16 10 = 480V = 15V = 25°C = 6.0A 0.24 0.23 0.22 0.21 0.20 RG = 50Ω V GE = 15V V CC = 480V I C = 12A 1 I C = 6.0A I C = 3.0A 0.1 A 0.01 0 10 20 30 40 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 0.26 8 Q g , Total G ate C harge (nC ) 50 60 R G , Gate Resistance (Ω) -60 -20 0 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 Fig. 10 - Typical Switching Losses vs. Case Temperature C-859 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S 1.4 1.0 0.8 0.6 0.4 0.2 VGGE E= 2 0V T J = 12 5°C 10 S A FE O P E RA TIN G A RE A 1 C Total Switching Losses (mJ) 1.2 100 = 50Ω = 150°C = 480V = 15V I , C o lle c to r-to -E m itte r C u rre n t (A ) RG TC V CC V GE A 0.0 0 2 4 6 8 10 12 0.1 1 14 10 Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Emitter Current (A) Section D - page D-12 C-860 To Order 1000