PD - _____
IRLI3303
PRELIMINARY
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
VDSS = 30V
RDS(on) = 0.026Ω
ID = 25A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
25
18
140
31
0.21
±20
130
20
5.6
2.6
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
4.8
65
°C/W
8/24/95
IRLI3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
30
–––
–––
–––
1.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
IGSS
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.4
200
14
36
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.026
VGS = 10V, ID = 15A
Ω
0.040
VGS = 4.5V, ID = 13A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 20A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
26
ID = 20A
8.8
nC VDS = 24V
15
VGS = 4.5V, See Fig. 6 and 13
–––
VDD = 15V
–––
ID = 20A
ns
–––
RG = 6.5Ω, VGS = 4.5V
–––
RD = 0.70Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
870 –––
VGS = 0V
340 –––
pF
VDS = 25V
170 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
25
–––
–––
140
–––
–––
–––
–––
72
180
1.3
110
280
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 15A, VGS = 0V
TJ = 25°C, IF = 20A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 25V, starting T J = 25°C, L = 470µH
RG = 25Ω, IAS = 20A. (See Figure 12)
t=60s, ƒ=60Hz
ISD ≤ 20A, di/dt ≤ 140A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRL3303 data and test conditions
IRLI3303
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
1
2.5V
20µs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
100
10
2.5V
1
A
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
100
TJ = 25°C
TJ = 175°C
10
1
V DS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
10
A
100
Fig 2. Typical Output Characteristics,
TJ = 175oC
1000
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TJ = 25oC
0.1
20µs PULSE WIDTH
T J = 175°C
0.1
0.1
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
TOP
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
I D = 34A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLI3303
1600
VGS , Gate-to-Source Voltage (V)
1400
C, Capacitance (pF)
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
1200
1000
Coss
800
600
Crss
400
I D = 20A
V DS = 24V
V DS = 15V
12
9
6
3
200
0
A
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
20
30
A
40
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.5
10µs
100
100µs
10
1ms
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRLI3303
RD
VDS
25
VGS
D.U.T.
RG
VDD
ID, Drain Current (Amps)
20
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
5
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PD M
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
t
N otes :
1 . D uty fac to r D = t
0.01
0.00001
1
1
/ t
2
2
2. P ea k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5.0 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRLI3303
300
TOP
250
BOTTOM
ID
8.3A
14A
20A
200
150
100
50
0
VDD = 15V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
5.0 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLI3303
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLI3303
Package Outline
TO-220 FullPak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
ø
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
-A3.70 (.145)
3.20 (.126)
16.00 (.630)
15.80 (.622)
2.80 (.110)
2.60 (.102)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
7.10 (.280)
6.70 (.263)
1.15 (.045)
MIN.
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1
2
3
2 CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
A
1.40 (.055)
3X
1.05 (.042)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
3X
M A M
B
2.54 (.100)
2X
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
D
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
Part Marking Information
TO-220 FullPak
EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401
A
INTERNATIONAL
IRFI840G
RECTIFIER
LOGO
PART NUMBER
E401 9245
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157,
61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg.,
2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan
Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.