Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET® POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. Part Number BV DSS R DS(on) ID IRFY9140CM -100V 0.2Ω -15.8A Features n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling The HEXFET power MOSFET’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves ther mal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter I D @ VGS= -10V, TC = 25°C I D @ VGS= -10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY9140CM Continuous Drain Current -15.8 Continuous Drain Current -10 Pulsed Drain Current -60 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy 640 Avalance Current -15.8 Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt -5.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) To Order Units A W W/K V mJ A mJ V/ns °C g Previous Datasheet Index Next Data Sheet IRFY9140CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — — -0.1 — — — -2.0 6.2 — — — — — — — — 0.20 0.22 -4.0 — -25 -250 — — 14.7 1.0 2.0 — — — — — — — — — — — — — — 8.7 -100 100 30 7.1 21 35 85 85 65 — ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance — 8.7 — Ciss Coss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1400 600 200 — — — Test Conditions V VGS = 0V, ID = -1.0mA V/°C Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -10A VGS = -10V, ID = -15.8A V VDS = VGS, I D = -250µA S ( ) VDS ≥ -15V, IDS = -10A VDS = 0.8 x max. rating,VGS = 0V µA VDS = 0.8 x max. rating VGS = 0V, TJ = 125°C V GS = -20V nA VGS = 20V VGS = -10V, ID = -15.8A nC VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = -50V, ID = -15.8A RG = 7.5Ω, VGS = -10V ns Ω Ω BVDSS see figure 10 nH pF Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0v, VDS = -25V f = 1.0MHz. see figure 5 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — -15.8 -60 A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — -4.2 280 3.6 V ns µC Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = -15.8A, VGS = 0V Tj = 25°C, IF = -15.8A, di/dt ≤ -100 A/µs VDD ≤ -50 V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink Min Typ Max Units — — — — — 0.21 1.25 80 K/W — To Order Test Conditions Typical socket mount Mounting surface flat, smooth Previous Datasheet Index Next Data Sheet IRFY9140CM Device Fig. 1 — Typical Output Characteristics TC = 25°C Fig. 2 —Typical Output Characteristics TC = 150°C -15.8 Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance vs. Temperature -15.8 Fig. 5 — Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet IRFY9140CM Device 1000 -I D , D rai n C u rre n t (A ) O P E R AT IO N I N T H IS A R E A L IM I T E D B Y R D S(on) 100 100µs 10 1m s TC = 2 5 °C T J = 1 5 0 °C S ing le P uls e 1 1 10ms A 10 100 -V D S , D ra in -to -S o u rc e V o lta g e (V ) Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 8 — Maximum Safe Operating Area 25 20 15 10 D Negative I D, Drain Current (Amps) 30 5 A 0 25 50 75 100 125 150 T C , C a s e T em pe ra ture (°C ) Fig. 9 — Maximum Drain Current vs. Case Temperature Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms To Order 1000 Previous Datasheet Index Next Data Sheet IRFY9140CM Device 1 D = 0 . 50 0 .2 0 PDM 0 .1 0 0.1 t 1 t2 0 .0 5 0 .0 2 0 .0 1 Notes: 1. Duty factor D = t / t 1 2 S IN G L E P U L S E ( TH E R M A L R E S P O N S E ) 2. Peak TJ = PDM x ZthJC 0.01 0.00001 0.0001 0.001 0.01 +T C 0.1 t 1 , R ectan gular P u lse D ur ation (s ec) Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit E A S , S in g le P uls e A v a la nc h e E ne rgy (m J ) T he rm al R esponse (Z th J C ) 10 Fig. 12b — Unclamped Inductive Waveforms 800 600 400 200 0 I = -1 9A V = -25 V 25 50 A 75 100 125 150 175 S ta rtin g TJ , J un c tion Te m p e ra ture (°C ) Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit To Order A 1 Previous Datasheet Index Next Data Sheet Notes: IRFY9140CM Device Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 11). @ VDD = -50V, Starting TJ = 25°C, EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = -15.8A, VGS = -10V, 25 ≤ RG ≤ 200Ω I SD ≤ -15.8A, di/dt ≤ -200A/µs, V DD ≤ BVDSS, T J ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions Pin 1 - Drain Pin 2 - Source Pin 3 - Gate 3 1 2 TO-257AA NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY9140C NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA CAUTION BERYLLIAWARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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