BUK9MJJ-55PTT Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits Integrated current sensors Integrated temperature sensors 1.3 Applications Lamp switching Power distribution Motor drive systems Solenoid drivers 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit Static characteristics, FET1 and FET2 RDSon drain-source on-state resistance VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 - 13 15 mΩ ID/Isense ratio of drain current to sense current Tj = 25 °C; VGS = 5 V; see Figure 18 5850 6500 7150 A/A Tj = 25 °C; VGS = 0 V; ID = 250 µA 55 - - V V(BR)DSS drain-source breakdown voltage BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G1 gate 1 2 IS1 current sense 1 3 D1 drain 1 4 A1 anode 1 5 C1 cathode 1 6 G2 gate 2 7 IS2 current sense 2 8 D2 drain 2 9 A2 anode 2 10 C2 cathode 2 11 D2 drain 2 12 KS2 Kelvin source 2 13 S2 source 2 14 S2 source 2 15 D2 drain 2 16 D1 drain 1 17 KS1 Kelvin source 1 18 S1 source 1 19 S1 source 1 20 D1 drain 1 Graphic symbol 11 20 D1 A1 D2 FET1 A2 FET2 10 1 SOT163-1 (SO20) G1 IS1 S1 KS1 C1 G2 IS2 S2 KS2 C2 003aaa745 3. Ordering information Table 3. Ordering information Type number BUK9MJJ-55PTT Package Name Description Version SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 2 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Limiting Values, FET1 and FET2 VDS drain-source voltage 25 °C < Tj < 150 °C - 55 V VDGR drain-gate voltage RGS = 20 kΩ; 25 °C < Tj < 150 °C - 55 V VGS gate-source voltage -15 15 V ID drain current Tsp = 25 °C; VGS = 5 V; see Figure 3; see Figure 2; [1][2] - 12.9 A Tsp = 100 °C; VGS = 5 V; see Figure 2; - 8.1 A IDM peak drain current Tsp = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 230 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 - 4.5 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C - 100 V - 6.5 A - 230 A - 527 mJ HBM; C = 100 pF; R = 1.5 kΩ; pins 3, 16 and 20 to pins 1, 2, 17, 18 and 19 shorted - 4 kV HBM; C = 100 pF; R = 1.5 kΩ; pins 8, 11 and 15 to pins 6, 7, 12,13 and 14 shorted - 4 kV HBM; C = 100 pF; R = 1.5 kΩ; all pins - 0.15 kV [1][2] Visol(FET-TSD) FET to temperature sense diode isolation voltage Source-drain diode, FET1 and FET2 IS source current Tsp = 25 °C; ISM peak source current tp ≤ 10 µs; pulsed; Tsp = 25 °C [2][1] Avalanche ruggedness, FET1 and FET2 EDS(AL)S non-repetitive ID = 12.9 A; Vsup ≤ 55 V; VGS = 5 V; Tj(init) = 25 °C; drain-source avalanche unclamped; see Figure 4; energy [3][4] [5] Electrostatic discharge, FET1 and FET2 VESD electrostatic discharge voltage [1] Single device conducting. [2] Current is limited by chip power dissipation rating. [3] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C. [4] Repetitive rating defined in avalanche rating figure. [5] Refer to application note AN10273 for further information. BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 3 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aab388 120 ID (A) Pder (%) 80 10 40 5 0 0 0 50 100 150 Tsp 0 200 (°C) Fig 2. Fig 1. 003aab887 15 Normalized total power dissipation as a function of solder point temperature, FET1 and FET2 50 100 150 Tsp (°C) 200 Continuous drain current as a function of solder point temperature, FET1 and FET2 003aab894 103 ID (A) 102 Limit RDSon = VDS / ID tp = 10 μ s 100 μ s 10 1 ms 10 ms 1 100 ms DC 10-1 10-2 10-1 Fig 3. 1 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2 BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 4 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aab924 102 IAL (A) (1) 10 (2) 1 (3) 10-1 10-3 Fig 4. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-sp) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from FET1 junction to solder point FET2 - - 28 K/W - - 28 K/W thermal resistance from mounted on a printed-circuit board; Both junction to ambient channels conducting; zero heat sink area; see Figure 5; see Figure 6 - 73 - K/W mounted on a printed-circuit board; Both channels conducting; 200 mm2 copper heat sink area; see Figure 5; see Figure 7 - 60 - K/W mounted on a printed-circuit board; Both channels conducting; 400 mm2 copper heat sink area; see Figure 5; see Figure 8 - 51 - K/W mounted on a printed-circuit board; One channel conducting; zero heat sink area; see Figure 5; see Figure 6 - 105 - K/W mounted on a printed-circuit board; One channel conducting; 200 mm2 copper heat sink area; see Figure 5; see Figure 7 - 90 - K/W mounted on a printed-circuit board; One channel conducting; 400 mm2 copper heat sink area; see Figure 5; see Figure 8 - 78 - K/W BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 5 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aac472 120 Rth(j-a) (K/W) (1) 80 (2) 001aae478 40 Fig 6. PCB used for thermal tests; zero heat sink area 0 0 Fig 5. 100 200 300 A (mm2) 400 Thermal resistance from junction to ambient as a function of printed-circuit board (PCB) heat sink area 001aae479 Fig 7. 001aae480 PCB used for thermal tests; heat sink area 200 mm2 Fig 8. PCB used for thermal tests; heat sink area 400 mm2 BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 6 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aad201 102 Zth(j-mb) (K/W) δ = 0.5 0.2 10 0.1 0.05 0.02 1 10-1 δ= P tp T 10-2 t tp single shot T 10-3 10-6 Fig 9. 10-5 10-4 10-3 10-2 10-1 1 102 10 103 tp (s) 104 Transient thermal impedance from juction to ambient as a function of pulse duration, FET1 and FET2 (PCB used for thermal tests;heat sink area 400mm2) 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit Static characteristics, FET1 and FET2 V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 14; see Figure 15 1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 14; see Figure 15 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 14; see Figure 15 - - 2.3 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 3 µA VDS = 40 V; VGS = 0 V; Tj = 150 °C - - 125 µA drain leakage current IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 °C - 2 300 nA RDSon drain-source on-state resistance VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 - 13 15 mΩ VGS = 5 V; ID = 10 A; Tj = 150 °C; see Figure 16; see Figure 17 - - 27.6 mΩ VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 - 14.2 16.7 mΩ VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 - 12.1 13.4 mΩ ID/Isense ratio of drain current to sense current Tj = 25 °C; VGS = 5 V; see Figure 18 5850 6500 7150 A/A SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; 25 °C < Tj < 150 °C; see Figure 19 -5.4 -5.7 -6 mV/K BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 7 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C; see Figure 19 2.855 2.9 2.945 V - 33 - nC - 6.7 - nC - 13.3 - nC Dynamic characteristics, FET1 and FET2 QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) ID = 10 A; VDS = 44 V; VGS = 5 V; see Figure 20 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 21 - 2450 3267 pF - 360 432 pF - 137 180 pF - 35 - ns - 70 - ns turn-off delay time - 135 - ns tf fall time - 61 - ns LD internal drain inductance From pin to centre of die - 0.85 - nH LS internal source inductance From source lead to source bonding pad - 1.9 - nH VDS = 30 V; RL = 3 Ω; VGS = 5 V; RG(ext) = 10 Ω Source-drain diode, FET1 and FET2 VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see Figure 22 - 0.85 1.2 V trr reverse recovery time - 44 - ns Qr recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V - 88 - nC 100 10 ID (A) 003aac412 5 80 003aac415 25 RDS on (mΩ) 4.5 4 20 3.5 60 15 3 40 10 VGS (V) =2.5 20 0 5 0 2 4 6 8 VDS (V) 10 Fig 10. Output characteristics: drain current as a function of drain-source voltage; typical values, FET1 and FET2 2 6 8 VGS (V) 10 Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values, FET1 and FET2 BUK9MJJ-55PTT_1 Product data sheet 4 © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 8 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aac411 80 003aac417 30 ID (A) gfs (S ) 20 60 Tj = 150 °C 25 °C 10 40 0 20 0 10 20 I D (A) 1 2 3 4 5 VGS (V) Fig 12. Forward transconductance as a function of drain current; typical values, FET1 and FET2 003aac894 10−1 0 30 Fig 13. Transfer characteristics; drain current as a function of gate-source voltage; typical values, FET1 and FET2 003aac895 2.5 ID (A) VGS(th) (V) 10−2 2.0 min typ max 10−3 1.5 10−4 1.0 10−5 0.5 10−6 0 1 2 3 VGS (V) Fig 14. Sub-threshold drain current as a function of gate-source voltage, FET1 and FET2 0 −60 typ min 0 60 120 180 Tj (°C) Fig 15. Gate-source threshold voltage as a function of junction temperature, FET1 and FET2 BUK9MJJ-55PTT_1 Product data sheet max © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 9 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aac414 60 a 3 RDS on (mΩ) 001aae823 2.0 2.5 1.5 40 3.5 1.0 20 4 4.5 5 0.5 VGS (V) = 10 0 0 20 40 60 80 100 I D (A) Fig 16. Drain-source on-state resistance as a function of drain current; typical values, FET1 and FET2 003aac410 9000 I D/I s ens e 0 −60 0 60 120 180 Tj (°C) Fig 17. Normalized drain-source on-state resistance factor as a function of junction temperature, FET1 and FET2 001aae485 3.0 VF(TSD) (V) 8000 2.5 7000 2.0 6000 1.5 5000 2 4 6 8 VGS (V) 10 Fig 18. Ratio of drain current to sense current as a function of gate-source voltage; typical values, FET1 and FET2 0 80 120 160 Tj (°C) Fig 19. Temperature sense diode forward voltage as a function of junction temperature; typical values, FET1 and FET2 BUK9MJJ-55PTT_1 Product data sheet 40 © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 10 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 003aac413 5 VGS (V) 4 003aac409 104 C (pF) VDS = 14 V VDS = 44 V Cis s 103 3 Cos s 2 Crs s 102 1 0 0 10 20 30 QG (nC) 10 10-1 40 Fig 20. Gate-source voltage as a function of turn-on gate charge; typical values, FET1 and FET2 1 10 VDS (V) 102 Fig 21. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values, FET1 and FET2 003aac418 50 IS (A) 40 150 °C 30 Tj = 25 °C 20 10 0 0 0.5 1 1.5 VS D (V) 2 Fig 22. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2 BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 11 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 7. Package outline SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 20 11 Q A2 A (A 3) A1 pin 1 index θ Lp L 10 1 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.3 0.1 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.05 0.419 0.043 0.055 0.394 0.016 inches 0.1 0.012 0.096 0.004 0.089 0.043 0.039 0.01 0.01 Z (1) 0.9 0.4 0.035 0.004 0.016 θ 8o o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 23. Package outline SOT163-1 BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 12 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9MJJ-55PTT_1 20090514 Product data sheet - - BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 13 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK9MJJ-55PTT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 14 May 2009 14 of 15 BUK9MJJ-55PTT NXP Semiconductors Dual TrenchPLUS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 May 2009 Document identifier: BUK9MJJ-55PTT_1