INTEGRATED CIRCUITS DATA SHEET TDA7057AQ 2 × 8 W stereo BTL audio output amplifier with DC volume control Product specification Supersedes data of 1997 July 15 File under Integrated Circuits, IC01 1998 Apr 07 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ FEATURES GENERAL DESCRIPTION • DC volume control The TDA7057AQ is a stereo BTL output amplifier with DC volume control. The device is designed for use in TVs and monitors, but is also suitable for battery-fed portable recorders and radios. • Few external components • Mute mode • Thermal protection • Short-circuit proof Missing Current Limiter (MCL) • No switch-on and switch-off clicks A MCL protection circuit is built-in. The MCL circuit is activated when the difference in current between the output terminal of each amplifier exceeds 100 mA (typical 300 mA). This level of 100 mA allows for single-ended headphone applications. • Good overall stability • Low power consumption • Low HF radiation • ESD protected on all pins. QUICK REFERENCE DATA SYMBOL PARAMETER VP supply voltage Pout output power CONDITIONS MIN. TYP. MAX. UNIT 4.5 − 18 V VP = 12 V; RL = 16 Ω 3.0 3.5 − W VP = 12 V; RL = 8 Ω − 5.3 − W VP = 15 V; RL = 8 Ω − 8 − W Gv voltage gain 39.5 40.5 41.5 dB ∆Gv voltage gain control 68 73.5 − dB Iq(tot) total quiescent current VP = 12 V; RL = ∞ − 22 25 mA THD total harmonic distortion Po = 0.5 W − 0.3 1 % ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TDA7057AQ DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6 1998 Apr 07 2 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ BLOCK DIAGRAM V handbook, full pagewidth P 4 TDA7057AQ input 1 DC volume control 1 I 3 1 Vref DC volume control 2 13 positive output 1 i 11 negative output 1 10 negative output 2 8 positive output 2 Ι I input 2 i STABILIZER TEMPERATURE PROTECTION I 5 7 i ΙΙ I 2 not connected 6 i 12 signal ground power ground 1 Fig.1 Block diagram. 1998 Apr 07 3 9 power ground 2 MSA714 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ PINNING SYMBOL PIN DESCRIPTION VC1 1 DC volume control 1 n.c. 2 not connected Vl (1) 3 voltage input 1 VP 4 positive supply voltage Vl (2) 5 voltage input 2 SGND 6 signal ground VC2 7 DC volume control 2 OUT2+ 8 positive output 2 PGND2 9 power ground 2 OUT2− 10 negative output 2 OUT1− 11 negative output 1 PGND1 12 power ground 1 OUT1+ 13 positive output 1 handbook, halfpage VC1 1 n.c. 2 V I (1) 3 VP 4 V I (2) 5 SGND 6 VC2 7 OUT2 8 PGND2 9 OUT2 10 OUT1 11 PGND1 12 OUT1 13 TDA7057AQ MSA716 Fig.2 Pin configuration. For portable applications there is a trend to decrease the supply voltage, resulting in a reduction of output power at conventional output stages. Using the BTL principle increases the output power. FUNCTIONAL DESCRIPTION The TDA7057AQ is a stereo output amplifier with two DC volume control stages. The device is designed for TVs and monitors, but is also suitable for battery-fed portable recorders and radios. The maximum gain of the amplifier is fixed at 40.5 dB. The DC volume control stages have a logarithmic control characteristic. Therefore, the total gain can be controlled from +40.5 dB to −33 dB. If the DC volume control voltage falls below 0.4 V, the device will switch to the mute mode. In conventional DC volume control circuits the control or input stage is AC-coupled to the output stage via external capacitors to keep the offset voltage low. In the TDA7057AQ the two DC volume control stages are integrated into the input stages so that no coupling capacitors are required and a low offset voltage is still maintained. The minimum supply voltage also remains low. The amplifier is a short-circuit protected to ground, VP and across the load. A thermal protection circuit is also implemented. If the crystal temperature rises above +150 °C the gain will be reduced, thereby reducing the output power. The BTL principle offers the following advantages: Special attention is given to switch-on and switch-off clicks, low HF radiation and a good overall stability. • Lower peak value of the supply current • The frequency of the ripple on the supply voltage is twice the signal frequency. Consequently, a reduced power supply with smaller capacitors can be used which results in cost reductions. 1998 Apr 07 4 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage − 18 V IORM repetitive peak output current − 1.25 A IOSM non-repetitive peak output current − 1.5 A Ptot total power dissipation − 22.5 W Tamb operating ambient temperature Tcase < 60 °C −40 +85 °C Tstg storage temperature −55 +150 °C Tvj virtual junction temperature − 150 °C tsc short-circuit time − 1 hr Vn input voltage pins 1, 3, 5 and 7 − 5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c thermal resistance from junction to case 4 K/W Rth j-a thermal resistance from junction to ambient in free air 40 K/W Power dissipation Assume VP = 12 V and RL = 16 Ω. The maximum sine wave dissipation is 2 × 1.8 W = 3.6 W. At Tamb(max) = 60 °C: Rth tot = (150 − 60)/3.6 = 25 K/W. Rth tot = Rth j-c + Rth c-hs + Rth hs. Rth c-hs + Rth hs = 25 − 4 = 21 K/W. 1998 Apr 07 5 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ CHARACTERISTICS VP = 12 V;Tamb = 25 °C; fi = 1 kHz; RL = 16 Ω; unless otherwise specified (see Fig.13). SYMBOL PARAMETER VP voltage supply Iq(tot) total quiescent current CONDITIONS MIN. TYP. MAX. UNIT 4.5 − 18.5 V VP = 12 V; RL = ∞; note 1 − 22 25 mA Maximum gain; V1,7 ≥ 1.4 V Po output power THD = 10%; RL = 16 Ω 3.0 3.5 − W THD = 10%; RL = 8 Ω − 5.3 − W THD=10%; RL = 8 Ω; VP = 15 V − 8 − W − 0.3 1 % 39.5 40.5 41.5 dB Gv = 0 dB; THD < 1% 1 − − V noise output voltage fi = 500 kHz; note 2 − 210 − µV THD total harmonic distortion Gv voltage gain Vi(rms) input signal handling (RMS value) Vo(n) Po = 0.5 W B bandwidth at −1 dB − note 3 − dB SVRR supply voltage ripple rejection note 4 34 38 − dB VOS DC output offset voltage |V13 - V11| and |V10 - V8| − 0 200 mV Zi input impedance (pins 3 and 5) 15 20 25 kΩ αcs channel separation RS = 5 kΩ 40 − − dB Gv channel unbalance note 5 − − 1 dB G1 = 0 dB; note 6 − − 1 dB Vi = 1.0 V; note 7 − 35 45 µV 68 73.5 − dB V1 = V7 = 0 V −20 −25 −30 µA Mute position; V1 = V7 =0.4 V ±30 mV Vo(mute) output voltage in mute position DC volume control ∆Gv gain control range lDC volume control current Notes 1. With a load connected to the outputs the quiescent current will increase, the maximum value of this increase being equal to the DC output offset voltage divided by RL. 2. The noise output voltage (RMS value) at fi = 500 kHz is measured with RS = 0 Ω and bandwidth = 5 kHz. 3. 20 Hz to 300 kHz (typical. 4. The ripple rejection is measured with RS = 0 Ω and f = 100 Hz to 10 kHz. The ripple voltage (Vripple = 200 mV RMS) is applied to the positive supply rail. 5. The channel unbalance is measured with VDC1 = VDC2. 6. The channel unbalance at G1 = 0 dB is measured with VDC1 = VDC2. 7. The noise output voltage (RMS value) is measured with RS = 5 kΩ unweighted. 1998 Apr 07 6 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control MBG672 40 TDA7057AQ MBG675 12 handbook, halfpage handbook, halfpage Iq (mA) THD (%) 30 8 (1) (2) 20 4 10 0 10−2 0 0 4 8 12 16 VP (V) 20 10−1 1 Pout (W) 10 (1) RL = 16 Ω. (2) RL = 8 Ω. Fig.3 Quiescent current as a function of supply voltage. Fig.4 THD as a function of output power. MBG674 MBG676 12 10 handbook, halfpage handbook, halfpage THD (%) Po (W) 8 (1) (2) 8 6 4 4 2 (1) (2) 0 10−2 10−1 0 1 10 f (kHz) 0 102 8 12 16 VP (V) 20 THD = 10%; f = 1 kHz. (1) RL = 8 Ω. (2) RL = 16 Ω. (1) Gv = 40 dB; Po = 0.5 W. (2) Gv = 30 dB; Po = 0.5 W. Fig.6 Fig.5 THD as a function of frequency. 1998 Apr 07 4 7 Output power as a function of supply voltage. Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control MBG677 15 TDA7057AQ MBG667 80 handbook, halfpage handbook, halfpage Gv (dB) (1) Pd 40 (W) 10 0 (2) −40 5 −80 0 −120 0 4 8 12 16 VP (V) 20 0 0.4 0.8 1.2 2.0 1.6 VVC (V) (1) RL = 8 Ω. (2) RL = 16 Ω. Fig.7 Total worst case power dissipation as a function of supply voltage. Fig.8 Voltage gain as a function of volume control voltage. MBG678 1 MBG663 0 handbook, halfpage handbook, halfpage SVRR (dB) Vno (mV) −20 (1) 10−1 −40 −60 (2) 10−2 0 0.4 0.8 1.2 −80 10−2 1.6 2.0 VVC (V) f = 22 Hz to 22 kHz. Fig.9 1 10 f (kHz) 102 (1) VDC = 1.4 V; Vripple = 0.2 V. (2) VDC = 0.4 V; Vripple = 0.2 V. Noise voltage as a function of volume control voltage. 1998 Apr 07 10−1 Fig.10 SVRR as a function of frequency. 8 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control MBG665 2.0 TDA7057AQ MBG666 30 IVC (µA) 20 handbook, halfpage handbook, halfpage Vin (V) 1.6 10 1.2 0 0.8 −10 0.4 −20 −30 0 4 0 8 12 16 VP (V) 20 0 0.4 0.8 1.2 2.0 1.6 VVC (V) THD = 1 %. Fig.12 Volume control current as a function of volume control voltage. Fig.11 Input signal handling. For single-end applications the output peak current must not exceed 100 mA. At higher output currents the short-circuit protection (MCL) will be active. APPLICATION INFORMATION The application diagram is illustrated in Fig.13. Test conditions Thermal considerations: Tamb = 25 °C unless otherwise specified; VP = 12 V; VDC = 1.4 V; fi = 1 kHz; RL = 16 Ω. At high junction temperatures (>125 °C) the voltage gain will decrease when it is higher than 0 dB. This results in a decrease of the output voltage and an increase of the distortion level. Thus for an optimal performance of the IC the heatsink has to be designed properly. The quiescent current has been measured without load impedance. The output power as a function of the supply voltage has been measured at THD = 10%. The maximum output power is limited by the maximum power dissipation and the maximum available output current. Calculation example for application: VP = 15 V; RL = 8 Ω, stereo sine wave; worst case sine wave power dissipation is 12 W. For Tamb(max) = 40 °C the thermal resistance from junction The maximum input signal voltage is measured at THD = 1% at the output with a voltage gain of 0 dB. ( 125 – 40 ) to ambient R th j-a = ----------------------------- = 7.1 K/W 12 To avoid instabilities and too high a distortion, the input ground and power ground must be separated as far as possible and connected as close as possible to the IC. The thermal resistance of the heatsink becomes: Rth h-a = Rth j-a − (Rth j-c + Rth c-h); Rth h-a = 7.1 − (4 + 0.1) = 3 K/W. The DC volume control can be applied in several ways. Two possible circuits are shown below the main application diagram. The circuits at the control pin will influence the switch-on and switch-off behaviour and the maximum voltage gain. 1998 Apr 07 It should be noted that for ‘music power’ the power dissipation will be approximately half of the sine wave dissipation. Thus a smaller heatsink can be used. 9 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ handbook, full pagewidth (1) 100 nF 220 µF VP = 12 V 4 TDA7057AQ 13 470 nF input 1 I+i 3 1 (2) Rs = 5 kΩ I−i STABILIZER 11 input 2 Rs = 5 kΩ − TEMPERATURE MCL PROTECTION 10 470 nF + − I−i 5 7 (2) I+i DCvolume 6 signal ground 8 9 + 12 power ground VP = 12 V volume control 1 µF volume control 1, 7 maximum voltage gain 34 dB 1 µF 1 MΩ 100 kΩ 1, 7 maximum voltage gain 40 dB 22 kΩ MBG679 (1) This capacitor can be omitted if the 220 µF electrolytic capacitor is connected close to pin 5. (2) RL = 16 Ω. Fig.13 Test and application diagram. 1998 Apr 07 10 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ PACKAGE OUTLINE DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 13 e1 Z e bp e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e e1 e2 Eh j L L3 m Q v w x Z (1) mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 3.4 1.7 5.08 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-03-11 97-12-16 SOT141-6 1998 Apr 07 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control TDA7057AQ The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Apr 07 12 Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control NOTES 1998 Apr 07 13 TDA7057AQ Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control NOTES 1998 Apr 07 14 TDA7057AQ Philips Semiconductors Product specification 2 × 8 W stereo BTL audio output amplifier with DC volume control NOTES 1998 Apr 07 15 TDA7057AQ Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1998 SCA59 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/1200/04/pp16 Date of release: 1998 Apr 07 Document order number: 9397 750 03255