Features • • • • • • Six Input Comparators with Schmitt-trigger Characteristics Input Clamping Current Capability of ±10 mA Integrated Protection Cells (EMC, ESD, RF) Dedicated to All Input Stages Common Shutdown by Junction-temperature Monitor Reset with Hysteresis at Low Voltage ESD Protection According to Human Body Model: ±2000 V (C = 100 pF, R = 1.5 kW) • Output Stages: – Short-circuit Protected – Load-dump Protected at 1 kW – No Crosstalk on Adjacent Channels – Jump Start Possible Hex Driver IC with Thermal Monitoring Description The hex driver IC U6805B includes 6 non-inverted and current-limited output stages with an open collector. Common thermal shutdown protects outputs against critical junction temperature. U6805B Each output can sink a current of 20 mA, and parallel output operation is possible. The digital inputs have Schmitt-trigger function with pull-up resistors of up to 5 V. Figure 1. Block Diagram VO1 1 VS 7 VO3 VO2 3 4 Thermal shutdown 2 GND Undervoltage detection VS = 5 V 8 6 VI1 VS 5 VI2 VI3 Rev. 4763A–AUTO–11/03 Pin Configuration Figure 2. Pinning SO14 VO1 1 14 VI1 VO2 2 13 VI2 VO3 3 12 VI3 GND 4 11 VS VO4 5 10 VI4 VO5 6 9 VI5 VO6 7 8 VI6 Pin Description 2 Pin Symbol Function 1 VO1 Output 1 2 VO2 Output 2 3 VO3 Output 3 4 GND Ground 5 VO4 Output 4 6 VO5 Output 5 7 VO6 Output 6 8 VI6 Input 6 9 VI5 Input 5 10 VI4 Input 4 11 VS Supply voltage, 5 V 12 VI3 Input 3 13 VI2 Input 2 14 VI1 Input 1 U6805B 4763A–AUTO–11/03 U6805B Basic Circuitry The integrated circuit U6805B requires a stabilized supply voltage (VS = 5 V ±5%) to comply with its electrical characteristics. An external buffer capacitor of C = 100 nF is recommended. An integrated 14 V Z diode between VS and ground protects the supply pin. All input stages are provided with an integrated 250 k W pull-up resistor and can be directly connected to a microcontroller. All output stages are open collectors, each capable of sinking 20 mA. Recommended external components: Pull-up resistor, R = 1 kW Capacitor to GND, C = 470 pF, see Figure 3 on page 4 Functional Description General ON state: Low level at the input stage activates the corresponding output stage. OFF state: The internal pull-up resistor provides high level to the input comparator and deactivates the output stage. 7 V Zener diodes between each input pin and GND are capable of ±10 mA clamping current without crosstalk on adjacent input stages. A total clamping current of ±30 mA should be observed with respect to the power dissipation. Current Limitation of the Output Stages and Overtemperature Shutdown A temperature-dependent current limitation in the range of 25 to 100 mA protects the stages in case of a short-circuit. Additionally, the chip temperature is monitored. If Tchip > 148°C, all outputs are disabled and automatically enabled with a hysteresis of DTChip > 5 K. Refer to the hex driver U6807B if the temperature shutdown feature is not required. Transients and Load Dump An integrated 28 V Zener diode protects each output stage against transients and load dump (Schaffner pulses). With the help of an external 1 kW resistor, the output transistor is capable of handling the corresponding current which flows during each of these conditions. Apart from that, the outputs are short-circuit and overload protected. Low-voltage Detection When the supply voltage is switched on, a power-on reset pulse is generated internally which disables all output stages until a defined supply-voltage level is reached. The low-voltage detection is provided with a hysteresis of Vhyst = 0.5 V typically. 3 4763A–AUTO–11/03 Figure 3. Application Schematic VS = 5 V VBatt Load 100 nF Microcontroller R VI1 VO1 VI2 VO2 VI3 VO3 VI4 U6805B R R R R R 6 × 1 kΩ VO4 VI5 VO5 VI6 VO6 C C C C C C 6 × 470 pF Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit VS 7.0 V Ambient temperature range Tamb -40 to +125 °C Storage temperature range Tstg -50 to +150 °C Tj +150 °C Symbol Value Unit RthJA 120 K/W Supply voltage Maximum junction temperature Thermal Resistance Parameters Junction ambient 4 U6805B 4763A–AUTO–11/03 U6805B Electrical Characteristics VS = 5 V ± 5%, Tamb = 27°C, reference point pin 4 (GND), unless otherwise specified, see Figure 1 on page 1 Parameters Test Conditions Symbol Min. VS Typ. Max. Unit 4.75 5.25 V IS IS 0.8 7 3.2 13 mA mA VTH(ON) VTH(OFF) 3.7 3.0 4.6 3.8 V V Low-voltage hysteresis Vhyst 0.55 1.05 V Temperature shutdown TChip 140 149 °C Temperature shutdown hysteresis Thyst 5 VI 6.7 Supply, Pin 11 Supply voltage Supply current Inputs open Inputs switched to GND Low-voltage detection threshold ON OFF °C Inputs; Pins 8, 9, 10, 12, 13 and 14 Z-diode protection voltage II = 10 mA Z-diode clamping current II Pull-up resistor RI Switching threshold OFF ON Hysteresis 170 250 8.5 V ±10 mA 305 kW VI VI 3.3 1.8 V V Vhyst 1.5 V Outputs; Pins 1, 2, 3, 5, 6 and 7 Z-diode protection voltage IO = 10 mA VO 26.5 Integrated capacitor 5 Leakage current Saturation voltage IO = 20 mA Current limitation Propagation delay V ILeak 2.5 µA VSat 0.7 V 100 mA 5 µs Ilimit 470 pF, 1 kW, 20 V pF td 25 5 4763A–AUTO–11/03 Ordering Information Extended Type Number Package U6805B-FP Remarks SO14 – Package Information Package SO14 5.2 4.8 Dimensions in mm 8.75 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 7.62 14 0.2 3.8 8 technical drawings according to DIN specifications 1 6 7 U6805B 4763A–AUTO–11/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2003. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4763A–AUTO–11/03