Features • • • • • • Three Input Comparators with Schmitt-trigger Characteristic Input Clamping Current Capability of ±10 mA Integrated Protection Cells (EMC, ESD, RF) Dedicated to all Input Stages Common Shutdown by Junction-temperature Monitor Reset with Hysteresis at Low Voltage ESD Protection According to Human Body Model: ±2000V (C = 100 pF, R = 1.5 kΩ) • Output Stages: – Short-circuit Protected – Load-dump Protected at 1 kΩ – No Crosstalk on Adjacent Channels – Jump Start Possible Triple Driver IC with Thermal Monitoring U6803B 1. Description The triple driver IC includes three non-inverted and current-limited output stages with an open collector. Common thermal shutdown protects the outputs against critical junction temperatures. Each output can sink a current of 20 mA, parallel output operation is possible. The digital inputs have Schmitt-trigger function with pull-up resistors to 5 V. Figure 1-1. Block Diagram VO1 1 VS 7 VO3 VO2 3 4 Thermal shutdown 2 GND Undervoltage detection VS = 5 V 8 6 VI1 VS 5 VI2 VI3 Rev. 4762B–AUTO–09/05 2. Pin Configuration Figure 2-1. Table 2-1. Pinning SO8 VO1 1 8 VI1 GND 2 7 VS VO2 3 6 VI2 VO3 4 5 VI3 Pin Description Pin Symbol Function 1 VO1 Output 1 2 GND Ground 3 VO2 Output 2 4 VO3 Output 3 5 VI3 Input 3 6 VI2 Input 2 7 VS Supply voltage 5V 8 VI1 Input 1 3. Basic Circuitry The integrated circuit U6803B requires a stabilized supply voltage (VS = 5V ±5%) to comply with its electrical characteristics. An external buffer capacitor of C = 100 nF is recommended. An integrated 14V Zener diode between VS and ground protects the supply pin. All input stages are provided with an integrated 250 kΩ pull-up resistor and can be directly connected to a microcontroller. All output stages are open collectors, each capable of sinking 20 mA. Recommended external components: • Pull-up resistor, R = 1 kΩ • Capacitor to GND, C = 470 pF, see Figure 4-1 on page 3 2 U6803B 4762B–AUTO–09/05 U6803B 4. Functional Description 4.1 General ON state: A low level at the input stage activates the corresponding output stage. OFF state: The internal pull-up resistor provides a high level to the input comparator and deactivates the output stage. 7V Zener diodes between each input pin and GND are capable of ±10 mA clamping currents without crosstalk on adjacent input stages. A total clamping current of ±30 mA should be observed with respect to the power dissipation. 4.2 Current Limitation of the Output Stages and Overtemperature Shutdown A temperature-dependent current limitation in the range of 25 mA to 100 mA protects the stages in case of a short. Additionally, the chip temperature is monitored. For TChip > 148°C, all outputs are disabled and automatically enabled with a hysteresis of TChip > 5°C. 4.3 Transients and Load Dump An integrated 28V Zener diode protects each output stage against transients and load-dump (Schaffner pulses). With the help of an external 1 kΩ resistor, the output transistor is capable of handling the corresponding current which flows during each of these conditions. Apart from that, the outputs are short-circuit and overload protected. 4.4 Low-voltage Detection When the supply voltage is switched on, a power-on reset pulse is generated internally which disables all output stages until a defined supply-voltage level is reached. The low-voltage detection is provided with a hysteresis of Vhyst = 0.5V typically. Figure 4-1. Application Schematic VS = 5 V VBatt Load 100 nF VI1 Microcontroller VI2 VI3 R R U6803B R 3 × 1 kΩ VO1 VO2 VO3 C C C 3 × 470 pF 3 4762B–AUTO–09/05 5. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit VS 7.0 V Ambient temperature range Tamb –40 to +125 °C Storage temperature range Tstg –50 to +150 °C Tj +150 °C Symbol Value Unit RthJA 160 K/W Supply voltage Maximum junction temperature 6. Thermal Resistance Parameters Junction ambient 7. Electrical Characteristics VS = 5V ±5%, Tamb = 27°C, reference point pin 2 (GND), unless otherwise specified, see Figure 1-1 on page 1 and Figure 4-1 on page 3 Parameters Test Conditions Symbol Min. VS Typ. Max. Unit 4.75 5.25 V IS IS 0.8 7 3.2 13 mA mA VTH(ON) VTH(OFF) 3.7 3.0 4.6 3.8 V V Low-voltage hysteresis Vhyst 0.55 1.05 V Temperature shutdown TChip 140 149 °C Temperature shutdown hysteresis Thyst 5 VI 6.7 Supply, Pin 7 Supply voltage Supply current Inputs open Inputs closed to GND Low-voltage detection threshold ON OFF °C Input; Pins 5, 6, 8 Zener-diode protection voltage II = 10 mA Zener-diode clamping current II Pull-up resistor Switching threshold RI OFF ON Hysteresis 170 250 8.5 V ±10 mA 305 kΩ VI VI 3.3 1.8 V V Vhyst 1.5 V 5 pF Output; Pins 1, 3, 4 Zener-diode protection voltage IO = 10 mA VO 26.5 Integrated capacitor Leakage current Saturation voltage (IO = 20 mA) Current limitation Propagation delay 4 ILeak 2.5 µA VSat 0.7 V 100 mA 5 µs Ilimit (470 pF, 1 kΩ, 20V) V td 25 U6803B 4762B–AUTO–09/05 U6803B 8. Ordering Information Extended Type Number Package Remarks U6803B-MFPY SO8 Tube, Pb-free U6803B-MFPG3Y SO8 Taped and reeled, Pb-free 9. Package Information Package SO8 Dimensions in mm 5.2 4.8 5.00 4.85 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 3.81 8 0.2 3.8 5 technical drawings according to DIN specifications 1 4 10. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4762B-AUTO-09/05 • Put datasheet in a new template • Pb-free Logo on page 1 added • Ordering Information on page 5 changed 5 4762B–AUTO–09/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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