HTSEMI MM1Z3V6B

MM1Z2V2B~MM1Z39B
SILICON PLANAR ZENER DIODES
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
• High reliability
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
Ptot
500
mW
Tj
150
O
TStg
- 55 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z2V2B~MM1Z39B
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Marking
Code
Vznom
V
lZT
for
Dynamic Impedance 2)
Reverse Leakage Current
VZT
ZZT (Max.)
at IZT
IR (Max.)
at VR
mA
V
Ω
mA
μA
V
MM1Z2V2B
9B
2.2
5
2.1...2.4
100
5
120
0.7
MM1Z2V4B
9C
2.4
5
2.3…2.65
100
5
120
1
MM1Z2V7B
9D
2.7
5
2.65…2.95
110
5
120
1
MM1Z3V0B
9E
3.0
5
2.95…3.25
120
5
50
1
MM1Z3V3B
9F
3.3
5
3.25…3.55
120
5
20
1
MM1Z3V6B
9H
3.6
5
3.6…3.845
100
5
10
1
MM1Z3V9B
9J
3.9
5
3.89…4.16
100
5
5
1
MM1Z4V3B
9K
4.3
5
4.17…4.43
100
5
5
1
MM1Z4V7B
9M
4.7
5
4.55…4.75
100
5
2
1
MM1Z5V1B
9N
5.1
5
4.98…5.2
80
5
2
1.5
MM1Z5V6B
9P
5.6
5
5.49…5.73
60
5
1
2.5
MM1Z6V2B
9R
6.2
5
6.06…6.33
60
5
1
3
MM1Z6V8B
9X
6.8
5
6.65…6.93
40
5
0.5
3.5
MM1Z7V5B
9Y
7.5
5
7.28…7.6
30
5
0.5
4
MM1Z8V2B
9Z
8.2
5
8.02…8.36
30
5
0.5
5
MM1Z9V1B
0A
9.1
5
8.85…9.23
30
5
0.5
6
MM1Z10B
0B
10
5
9.77…10.21
30
5
0.1
7
MM1Z11B
0C
11
5
10.76…11.22
30
5
0.1
8
MM1Z12B
0D
12
5
11.74…12.24
30
5
0.1
9
MM1Z13B
0E
13
5
12.91…13.49
37
5
0.1
10
MM1Z15B
0F
15
5
14.34…14.98
42
5
0.1
11
MM1Z16B
0H
16
5
15.85…16.51
50
5
0.1
12
MM1Z18B
0J
18
5
17.56…18.35
65
5
0.1
13
MM1Z20B
0K
20
5
19.52…20.39
85
5
0.1
15
MM1Z22B
0M
22
5
21.54…22.47
100
5
0.1
17
MM1Z24B
0N
24
5
23.72…24.78
120
5
0.1
19
MM1Z27B
0P
27
5
26.19…27.53
150
5
0.1
21
MM1Z30B
0R
30
5
29.19…30.69
200
5
0.1
23
MM1Z33B
0X
33
5
32.15…33.79
250
5
0.1
25
MM1Z36B
0Y
36
5
35.07…36.87
300
5
0.1
27
MM1Z39B
0Z
39
5
37…41
100
5
2
30
1)
2)
VZ is tested with pulses(20 ms).
ZZT is measured at IZ by given a very small A.C. current signal.
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z2V2B~MM1Z39B
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.9
3.7
0.2
5
O
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５