DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 FEATURES PINNING • High sensitivity PIN SYMBOL 1 +Iflip flip coil 2 VCC bridge supply voltage APPLICATIONS 3 GND ground • Navigation 4 n.c. not connected • Current and earth magnetic field measurement 5 n.c. not connected • Traffic detection. 6 −VO bridge output voltage 7 +VO bridge output voltage 8 −Iflip flip coil • Integrated set/reset coil. DESCRIPTION The KMZ50 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains one magnetoresistive Wheatstone bridge and integrated set/reset conductors. With the integrated set/reset conductor the orientation of sensitivity may be set or changed (flipped). A short current pulse on this conductor is needed to recover (set) the sensor after exposure to strong disturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, output will become independent of sensor and amplifier offset. handbook, halfpage DESCRIPTION 8 5 H pin 1 index 1 4 MGD791 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 8 V S sensitivity (uncompensated) 12 16 − mV ⁄ V ----------------kA ⁄ m Voffset offset voltage −1.5 − +1.5 mV/V Rbridge bridge resistance 1 − 3 kΩ Rflip flip coil resistance 1 3 5 Ω Iflip (min) minimum recommended flipping current; note 1 800 1000 1200 mA tflip (min) minimum flip pulse duration; note 1 1 3 100 µs Note 1. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not exceed the specified limit, see “Limiting values”. 1998 Mar 24 2 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 CIRCUIT DIAGRAM handbook, halfpage −I F +VO 8 −VO n.c. 7 6 5 2 3 4 Z1 1 +IF VCC GND MGD792 n.c. Fig.2 Simplified circuit diagram. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VCC bridge supply voltage − 9 V Ptot total power dissipation − 130 mW Tstg storage temperature −65 +150 °C Tbridge bridge operating temperature −40 +125 °C Iflip (max) maximum flipping current − 1500 mA Pflip (max) maximum flipping power dissipation − 50 mW Visol voltage between isolated systems: flip conductor - Wheatstone bridge − 60 V THERMAL CHARACTERISTICS SYMBOL Rth j-a 1998 Mar 24 PARAMETER thermal resistance from junction to ambient 3 VALUE UNIT 155 K/W Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 8 V Hy operating range in sensitive direction −0.2 − +0.2 kA/m Hx operating range perpendicular to sensitive direction −0.2 − +0.2 kA/m S sensitivity open circuit 12 16 − mV ⁄ V ----------------kA ⁄ m TCVO temperature coefficient of output voltage VCC = 5 V; Tamb = −25 to +125 °C − −0.4 − %/K ICC = 3 mA; Tamb = −25 to +125 °C − −0.1 − %/K resistance pins 2 to 3 1 − 3 kΩ Tbridge = −25 to +125 °C − 0.3 − %/K −1.5 − +1.5 mV/V −3 − +3 µV ⁄ V --------------K − − 2 %FS Rbridge bridge resistance TCRbridge temperature coefficient of bridge resistance Voffset offset voltage TCVoffset temperature coefficient of offset voltage FH hysteresis of output voltage Rflip resistance of set/reset conductor resistance pins 1 to 8 1 3 5 Ω Iflip recommended flipping current for stable operation ±800 ±1000 ±1200 mA tflip flip pulse duration 1 3 100 µs Risol isolating resistance resistance pins 1 to 2, 1 to 4, 2 to 4 1 − − MΩ Visol voltage between isolated systems voltage pins 1 to 2, 1 to 4, 2 to 4 − − 50 V f operating frequency 0 − 1 MHz 1998 Mar 24 Tbridge = −25 to +125 °C current pins 1 to 8 4 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1998 Mar 24 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 5 o 8 0o Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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