Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode Fusing • TTL and CMOS Compatible • Suitable Minimum Burst Length ³ 6 or 10 Pulses/Burst Applications • Audio Video Applications • Home Appliances • Remote Control Equipment IR Receiver ASSP T2525 Description The IC T2525 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram (see Figure 1). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of 4.5 V to 5.5 V. Figure 1. Block Diagram VS IN OUT Input CGA and filter Demodulator Microcontroller AGC/ATC and digital control Oscillator Carrier frequency f0 Modulated IR signal min 6/10 pulses GND Rev. 4657D–AUTO–11/03 Pin Configuration Figure 2. Pinning SO8 and TSSOP8 VS NC OUT NC 1 2 3 4 8 7 6 5 NC NC GND IN Pin Description Pin Symbol Function 1 VS Supply voltage 2 NC Not connected 3 OUT 4 NC Not connected 5 IN Input PIN diode 6 GND 7 NC Not connected 8 NC Not connected Data output Ground Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VS -0.3 to +6 V Supply current IS 3 mA Input voltage VIN -0.3 to VS V Input DC current at VS = 5 V IIN 0.75 mA Output voltage VO -0.3 to VS V Output current IO 10 mA Operating temperature Tamb -25 to +85 °C Storage temperature Tstg -40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Symbol Value Unit Junction ambient SO8 RthJA 130 K/W Junction ambient TSSOP8 RthJA TBD K/W Thermal Resistance Parameter 2 T2525 4657D–AUTO–11/03 T2525 Electrical Characteristics Tamb = 25°C, VS = 5 V unless otherwise specified. No. 1 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5 5.5 V C 1 IS 0.8 1.1 1.4 mA B kW A 250 mV B Vs V B mA B µA C -960 µA B Supply 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions IIN = 0 Output 2.1 Internal pull-up resistor(1) Tamb = 25°C; see Figure 9 on page 7 1,3 RPU 2.2 Output voltage low IL = 2 mA; see Figure 9 on page 7 3,6 VOL 2.3 Output voltage high 2.4 3 Output current clamping 3,1 VOH R2 = 0; see Figure 9 on page 7 3,6 IOCL 30/40 VS - 0.25 8 Input 3.1 Input DC current VIN = 0; see Figure 9 on page 7 5 IIN_DCMAX -85 3.2 Input DC current; Figure 4 on page 5 VIN = 0; Vs = 5 V, Tamb = 25°C 5 IIN_DCMAX -530 3.3 Minimum detection threshold current; Figure 3 on page 5 Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50(2) 3 IEemin -520 pA B 3.4 Test signal: see Figure 8 on page 7 VS = 5 V, Minimum detection Tamb = 25°C, threshold current with IIN_DC = 1 µA, AC current disturbance square pp, IIN_AC100 = 3 µA at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50%(2) 3 IEemin -800 pA C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 3 4657D–AUTO–11/03 Electrical Characteristics (Continued) Tamb = 25°C, VS = 5 V unless otherwise specified. No. 3.5 4 Parameters Test Conditions Maximum detection threshold current with VIN > 0V Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 5%(2) Pin Symbol Min. 3 IEemax -400 Typ. Max. Unit Type* µA D Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) GVARMIN -5 dB D 4.3 Total internal amplification(3) GMAX 71 dB D 4.4 Center frequency fusing VS = 5 V, Tamb = 25°C accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 f0_FUSE -3 f0 +3 % A f0 -6.7 f0 +4.1 % C BPF bandwidth: type N0 - N3 -3 dB; f0 = 38 kHz; see Figure 6 on page 6 B 3.5 kHz C BPF bandwidth: type N6, N7 -3 dB; f0 = 38 kHz Figure 6 on page 6 B 5.4 kHz C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage ESD All pins Þ 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 Reliability Electrical qualification (1000h) in molded SO8 plastic package 4 T2525 4657D–AUTO–11/03 T2525 Typical Electrical Curves at Tamb = 25°C Figure 3. IEemin versus IIN_DC , VS = 5 V Figure 4. VIN versus IIN_DC, VS = 5 V Figure 5. Data Transmission Rate, VS = 5 V 5 4657D–AUTO–11/03 Figure 6. Typical Bandpass Curve Q = f0/Df; Df = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11 Figure 7. Illustration of Used Terms Period (P=16) 1066 µs Burst (N=16 pulses) 533 µs IN 7 1 16 7 7 33 µs OUT tDON tDOFF 533 µs Envelope 1 Envelope 16 17056 µs/data word OUT Telegram pause Data word Data word 17 ms TREP = 62 ms t Example: f = 30 kHz, burst with 16 pulses, 16 periods 6 T2525 4657D–AUTO–11/03 T2525 Figure 8. Test Circuit IEe = D U1/400K VDD = 5 V DU1 IIN_DC 400k 1 nF R1 = 220 VS 20k IIN IEe IN 1 nF VPULSE DU2 ~ OUT GND C1 IIN_DC = DU2/40k 20k T2525 f0 4.7 µF 16 - IIN_AC100 DC + tPER = 10 ms Figure 9. Application Circuit VDD = 5 V (1) optional R2(1) > 2.4k R1 = 220 RPU IS VS IN T2525 IIN IOCL OUT IL Microcontroller GND VIN IIN_DC IEe C1 = 4.7 µF VO C2 (1) = 470 pF 7 4657D–AUTO–11/03 Chip Dimensions Figure 10. Chip Size in µm 1130,1030 GND IN 723,885 351,904 scribe VS length 63,660 T2525 63,70 FUSING OUT 0,0 width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: 8 Length inclusive scribe 1.15 mm Width inclusive scribe 1.29 mm Thickness 290 µ ± 5% Pads 90 µ ´ 90 µ Fusing pads 70 µ ´ 70 µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2 Thickness 0.7/0.3 µm 1. Value depends on manufacture location. T2525 4657D–AUTO–11/03 T2525 Ordering Information Extended Type Number PL(2) RPU(3) D(4) 2 30 2090 Standard type: ³ 10 pulses, enhanced sensibility, high data rate T2525N1xx -DDW 1 30 2090 Standard type: ³ 10 pulses, enhanced sensibility, high data rate T2525N2xx(1)-yyy(5) 2 40 1373 Lamp type: ³ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N3xx(1)-DDW 1 40 1373 Lamp type: ³ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N6xx(1)-yyy(5) 2 30 3415 Short burst type: ³ 6 pulses, enhanced data rate T2525N7xx(1)-DDW 1 30 3415 Short burst type: ³ 6 pulses, enhanced data rate T2525N0xx(1)-yyy(5) (1) Notes: 1. 2. 3. 4. 5. Type xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request) Two pad layout versions (see Figure 11 and Figure 12) available for different assembly demand Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”) Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 5 on page 5) yyy means kind of packaging: .................... .......DDW -> unsawn wafers in box .................... .......6AQ -> (only on request, TSSOP8 taped and reeled) Pad Layout Figure 11. Pad Layout 1 (DDW only) IN GND OUT T2525 FUSING VS Figure 12. Pad Layout 2 (DDW, SO8 or TSSOP8) (6) GND (5) IN (1) VS T2525 (3) OUT FUSING 9 4657D–AUTO–11/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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