ATMEL ATR7035-PESG

Features
•
•
•
•
•
•
Frequency Range 5 GHz to 6 GHz
POUT Maximum 28 dBm
Gain Typically 19 dB
VCC 3.0V to 3.9V
Package: QFN16
Current Consumption in Power Down Mode Typically ≤ 15 µA
5.8 GHz WDCT
Power Amplifier
Benefits
• Biasing Control Extends Battery Life Time
• Simple Input and Output Matching
• One Single Supply Voltage Required
ATR7035
Electrostatic sensitive device.
Observe precautions for handling.
Summary
1. Description
1.1
Preliminary
Process
The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good power-added
efficiency.
1.2
Circuitry
The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The
output stages were realized using an open-collector structure. The IC features 50-Ω
input matching. Power-up/down and output level are controlled at bias control pin 6
(VCTL).
Figure 1-1.
Block Diagram
VCC1
15
VCC2
13
ATR7035
RFOUT
11
RFIN
3
Matching
RFOUT
10
Bias control
6
VCTL
16
VCC_CTL
Rev. 4577ES–DECT–10/05
Note: This is a summary document. A complete document
is available under NDA. For more information, please contact your local Atmel sales office.
2. Ordering Information
Extended Type Number
Package
Remarks
ATR7035-PESG
QFN16
Tube, MOQ 750, Pb-free
ATR7035-PEQG
QFN16
Taped and reeled, MOQ 6000, Pb-free
3. Package Information
2
ATR7035 [Preliminary]
4577ES–DECT–10/05
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4577ES–DECT–10/05