ATMEL T2526

Features
• No External Components Except PIN Diode
• Supply-voltage Range: 2.7V to 5.5V
• Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• Automatic Supply Voltage Adaptation
• Highest Immunity against Disturbances from Daylight and Lamps
• Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode
Fusing ±2.5%
• TTL and CMOS Compatible
Applications
• Home Entertainment Applications (Audio/Video)
• Home Appliances
• Remote Control Equipment
Low-voltage
IR Receiver
ASSP
T2526
1. Description
The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. The IC offers
highest sensitivity as well as highest suppression of noise from daylight and lamps.
The T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44,
56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise,
short burst, data rate) covering requirements of high-end remote control solutions
(please refer to selection guide available for T2525/T2526). The T2526 operates in a
supply voltage range of 2.7V to 5.5V.
The function of the T2526 can be described using the block diagram of Figure 1-1 on
page 2. The input stage meets two main functions. First it provides a suitable bias
voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low noise applications. After
amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal The demodulator is used first to convert
the input burst signal to a digital envelope output pulse and to evaluate the signal
information quality, i.e., unwanted pulses will be suppressed at the output pin. All this
is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps
etc.). Other special features are used to adapt to the current application to secure best
transmission quality.
4597H–AUTO–09/09
Figure 1-1.
Block Diagram
VS
IN
OUT
CGA and
filter
Input
Demodulator
Microcontroller
AGC/ATC
and digital control
Oscillator
Carrier frequency f0
T2526
Modulated IR signal
min 6 or 10 pulses
GND
2. Pin Configuration
Figure 2-1.
Pinning TSSOP8
VS
NC
OUT
NC
Table 2-1.
2
1
2
3
4
8
7
6
5
NC
NC
GND
IN
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
2
NC
Not connected
3
OUT
4
NC
Not connected
5
IN
Input PIN-diode
6
GND
7
NC
Not connected
8
NC
Not connected
Data output
Ground
T2526
4597H–AUTO–09/09
T2526
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
Value
Unit
Supply voltage
VS
–0.3 to +6
V
Supply current
IS
3
mA
Input voltage
VIN
–0.3 to VS
V
Input DC current at VS = 5V
IIN
0.75
mA
Output voltage
VO
–0.3 to VS
V
IO
10
mA
Operating temperature
Tamb
–25 to +85
°C
Storage temperature
Tstg
–40 to +125
°C
Power dissipation at Tamb = 25°C
Ptot
30
mW
Symbol
Value
Unit
RthJA
150
K/W
Output current
4. Thermal Resistance
Parameters
Junction ambient TSSOP8
3
4597H–AUTO–09/09
5. Electrical Characteristics, 3-V Operation
Tamb = 25°C, VS = 3V unless otherwise specified.
No.
1
Parameters
1.1
Supply-voltage range
1.2
Supply current
2
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
VS
2.7
3.0
3.3
V
C
1
IS
0.7
0.9
1.3
mA
B
kΩ
A
250
mV
B
Vs
V
B
mA
B
µA
C
Supply
IIN =0
Output
2.1
Internal pull-up resistor(1)
Tamb = 25°C
See Figure 7-10 on page 10
1, 3
RPU
2.2
Output voltage low
R2 = 2.4 kΩ
See Figure 7-10 on page 10
3, 6
VOL
2.3
Output voltage high
3, 1
VOH
2.4
Output current clamping
R2 = 0
See Figure 7-10 on page 10
3, 6
IOCL
VIN = 0
See Figure 7-10 on page 10
5
IIN_DCMAX
5
IIN_DCMAX
–350
µA
B
3
IEemin
–700
pA
B
3
IEemin
–1300
pA
C
3
IEemax
µA
D
3
Input DC current
3.2
Input DC current
VIN = 0; Vs = 3V
See Figure 7-3 on page 7 Tamb = 25°C
3.4
3.5
VS – 0.25
8
Input
3.1
3.3
30/40
Minimum detection
Test signal:
threshold current
See Figure 7-9 on page 10
See Figure 7-1 on page 7 VS = 3V
Tamb= 25°C, IIN_DC=1 µA
Minimum detection
square pp
threshold current with AC burst N = 16
current disturbance
f = f0; tPER = 10 ms
IIN_AC100 =
Figure 7-8 on page 9
3 µA at 100 Hz
BER = 50(2)
Maximum detection
threshold current with
VIN > 0V
Test signal:
See Figure 7-9 on page 10
VS = 3V, Tamb = 25°C
IIN_DC = 1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 5%(2)
–150
–200
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4
T2526
4597H–AUTO–09/09
T2526
5. Electrical Characteristics, 3-V Operation (Continued)
Tamb = 25°C, VS = 3V unless otherwise specified.
No.
4
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Controlled Amplifier and Filter
4.1
Maximum value of
variable gain (CGA)
GVARMAX
51
dB
D
4.2
Minimum value of variable
gain (CGA)
GVARMIN
-5
dB
D
4.3
Total internal
amplification(3)
GMAX
71
dB
D
4.4
Center frequency fusing
accuracy of bandpass
4.5
Overall accuracy center
frequency of bandpass
4.6
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
4.7
BPF bandwidth
–3 dB; f0 = 38 kHz;
See Figure 7-7 on page 9
VS = 3V, Tamb = 25°C
f03V_FUSE
–2.5
f0
+2.5
%
A
f03V
–5.5
f0
+3.5
%
C
f03V
–4.5
f0
+3.0
%
C
kHz
C
B
3.8
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
6. Electrical Characteristics, 5-V Operation
Tamb = 25°C, VS = 5V unless otherwise specified.
No.
5
Parameters
5.1
Supply-voltage range
5.2
Supply current
6
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
VS
4.5
5.0
5.5
V
C
1
IS
0.9
1.2
1.6
mA
B
kΩ
A
250
mV
B
Vs
V
B
mA
B
Supply
IIN =0
Output
6.1
Internal pull-up
resistor(1)
Tamb = 25°C
See Figure 7-10 on page 10
1, 3
RPU
6.2
Output voltage low
R2 = 2.4 kΩ
See Figure 7-10 on page 10
3, 6
VOL
6.3
Output voltage high
3, 1
VOH
6.4
Output current
clamping
3, 6
IOCL
R2 = 0
See Figure 7-10 on page 10
30/40
VS – 0.25
8
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
5
4597H–AUTO–09/09
6. Electrical Characteristics, 5-V Operation (Continued)
Tamb = 25°C, VS = 5V unless otherwise specified.
No.
7
Parameters
Test Conditions
Pin
Symbol
Min.
5
IIN_DCMAX
–400
Typ.
Max.
Unit
Type*
µA
C
Input
VIN = 0
See Figure 7-10 on page 10
7.1
Input DC current
7.2
Input DC-current
V = 0; Vs = 5V
See Figure 7-4 on page IN
Tamb = 25°C
8
5
IIN_DCMAX
–700
µA
B
7.3
Min. detection
threshold current
See Figure 7-2 on page
7
3
IEemin
–850
pA
B
3
IEemin
–2000
pA
C
3
IEemax
µA
D
7.4
7.5
8
Test signal:
See Figure 7-9 on page 10
VS = 5V
Tamb = 25°C
IIN_DC = 1 µA
Min. detection
square pp
threshold current with burst N = 16
AC current disturbance f = f ; t
0 PER = 10 ms
IIN_AC100 = 3 µA at
Figure 7-8 on page 9
100 Hz
BER = 50(2)
Max. detection
threshold current with
VIN > 0V
Test signal:
See Figure 7-9 on page 10
VS = 5V, Tamb = 25° C IIN_DC =
1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 5%(2)
–500
Controlled Amplifier and Filter
8.1
Maximum value of
variable gain (CGA)
GVARMAX
51
dB
D
8.2
Minimum value of
variable gain (CGA)
GVARMIN
–5
dB
D
8.3
Total internal
amplification(3)
GMAX
71
dB
D
8.4
Resulting center
frequency fusing
accuracy
f05V
f03V-FUSE
+ 0.5
%
A
f0 fused at VS = 3V
VS = 5V, Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
6.1
ESD
All pins ⇒2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
6.2
Reliability
Electrical qualification (1000h) in molded plastic package
6
T2526
4597H–AUTO–09/09
T2526
7. Typical Electrical Curves at Tamb = 25°C
Figure 7-1.
IEemin versus IIN_DC, VS = 3V
100
IEemin (nA)
VS = 3V
f = f0
10
1
0.1
0.1
1
10
100
1000
100
1000
IIN_DC (µA)
Figure 7-2.
IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
VS = 5V
f = f0
10
1
0.1
0.1
1
10
IIN_DC (µA)
Figure 7-3.
VIN versus IIN_DC, VS = 3V
3.5
VS = 3V
f = f0
3.0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
7
4597H–AUTO–09/09
Figure 7-4.
VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
f = f0
3.0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 7-5.
Data Transmission Rate, VS = 3V
5000
4500
VS = 3V
4000
Short burst
Bits/s
3500
3000
2500
Standard type
2000
1500
Lamp type
1000
500
0
25
35
45
55
65
75
85
f0 (kHz)
Figure 7-6.
Data Transmission Rate, VS = 5V
5000
4500
VS = 5V
4000
Short burst
Bits/s
3500
Standard type
3000
2500
Lamp type
2000
1500
1000
500
0
25
35
45
55
65
75
85
f0 (kHz)
8
T2526
4597H–AUTO–09/09
T2526
Figure 7-7.
Typical Bandpass Curve
1.1
VS = 3V
Relative Amplitude
1.0
0.9
0.8
Bandwidth (-3 dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B => –3 dB values.
Example: Q = 1/(1.047 – 0.954) = 11
Figure 7-8.
Illustration of Used Terms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
1066 µs
Period (P = 16)
Burst (N = 16 pulses)
533 µs
IN
1
7
16
7
7
33 µs
OUT
t DON
tDOFF
533 µs
Envelope 16
Envelope 1
17056 µs/data word
OUT
Telegram pause
Data word
Data word
t
17 ms
TREF = 62 ms
9
4597H–AUTO–09/09
Figure 7-9.
Test Circuit
I Ee = ΔU1/400 kΩ
ΔU1
VDD = 3V to 5V
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IEe
IIN
20 kΩ
IIN_AC100
IN
T2526
1 nF
VPULSE
OUT
GND
ΔU2
C1
I IN_DC = ΔU2/40 kΩ
20 kΩ
f0
+
4.7 µF
16
DC
+
tPER = 10 ms
Figure 7-10. Application Circuit
VDD = 3V to 5V
(1)
optional
R2(1) > 2.4 kΩ
R1 = 220Ω
RPU
IS
VS
IOCL
IN
T2526
IIN
Microcontroller
OUT
GND
+
IIN_DC
10
IEe
C1
4.7 µF
VIN
VO
C2(1) = 470 pF
T2526
4597H–AUTO–09/09
T2526
8. Chip Dimensions
Figure 8-1.
Chip Size in µm
1210, 1040
GND
IN
336,906
783,887
scribe
length
VS
T2526
55,652
55,62
Fusing
OUT
0,0
width
Note:
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Pad metallurgy
Finish
Note:
Length inclusive scribe
1.16 mm
Width inclusive scribe
1.37 mm
Thickness
290 µ ± 5%
Pads
90 µ × 90 µ
Fusing pads
70 µ × 70 µ
Material
AlCu/AlSiTi(1)
Thickness
0.8 µm
Material
Si3N4/SiO2
Thickness
0.7/0.3 µm
1. Value depends on manufacture location.
11
4597H–AUTO–09/09
9. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type
Number
PL(2)
RPU(3)
D(4)
T2526S0xx(1)C-DDW
2
30
2179
T2526S1xx C-DDW
1
30
2179
T2526S2xx(1)C-DDW
2
40
1404
T2526S3xx(1)C-DDW
1
40
1404
T2526S6xx(1)C-DDW
2
30
3415
1
30
3415
(1)
(1)
T2526S7xx C-DDW
Notes:
Type(5)
Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure
data transmission
Short burst type: ≥ 6 pulses, enhanced data rate
1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request)
2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand
3. Integrated pull-up resistor at pin OUT (see electrical characteristics)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 7-8 on page 9)
5. On request: noise type, data rate type
9.1
Pad Layout
Figure 9-1.
Pad Layout 1
GND
IN
OUT
T2526
Fusing
VS
Figure 9-2.
Pad Layout 2
(6)
(5)
GND
IN
(1)
VS
T2526
(3)
OUT
12
Fusing
T2526
4597H–AUTO–09/09
T2526
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
4597H-AUTO-09/09
• Put datasheet in newest template
• Ordering Information table changed
4597G-AUTO-10/06
•
•
•
•
4597F-AUTO-04/06
• Section 9 “Ordering Information” on page 11 changed
4597E-AUTO-04/06
• Put datasheet in a new template
• Section 8 “Chip Dimensions” on page 10 changed
4597D-AUTO-08/05
•
•
•
•
Features on page 1 changed
Applications on page 1 changed
Section 1 “Description” on page 1 changed
Section 5 “Electrical Characteristics, 3-V Operation” number 3.4 on
page 3 changed
• Section 6 “Electrical Characteristics, 5-V Operation” number 7.3 and 7.4
on page 5 changed
• Section 9 “Ordering Information” on page 11 changed
Put datasheet in a new template
First page: Pb-free logo added
Page 11: Ordering Information changed
Page 2, 3, 5, 11, 13: SO8 deleted
13
4597H–AUTO–09/09
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Technical Support
ir_control@atmel.com
Sales Contact
www.atmel.com/contacts
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4597H–AUTO–09/09