Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) • Automatic Supply Voltage Adaptation • Highest Immunity against Disturbances from Daylight and Lamps • Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode Fusing ±2.5% • TTL and CMOS Compatible Applications • Home Entertainment Applications (Audio/Video) • Home Appliances • Remote Control Equipment Low-voltage IR Receiver ASSP T2526 1. Description The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise from daylight and lamps. The T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44, 56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise, short burst, data rate) covering requirements of high-end remote control solutions (please refer to selection guide available for T2525/T2526). The T2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the T2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. 4597H–AUTO–09/09 Figure 1-1. Block Diagram VS IN OUT CGA and filter Input Demodulator Microcontroller AGC/ATC and digital control Oscillator Carrier frequency f0 T2526 Modulated IR signal min 6 or 10 pulses GND 2. Pin Configuration Figure 2-1. Pinning TSSOP8 VS NC OUT NC Table 2-1. 2 1 2 3 4 8 7 6 5 NC NC GND IN Pin Description Pin Symbol Function 1 VS Supply voltage 2 NC Not connected 3 OUT 4 NC Not connected 5 IN Input PIN-diode 6 GND 7 NC Not connected 8 NC Not connected Data output Ground T2526 4597H–AUTO–09/09 T2526 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Value Unit Supply voltage VS –0.3 to +6 V Supply current IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Symbol Value Unit RthJA 150 K/W Output current 4. Thermal Resistance Parameters Junction ambient TSSOP8 3 4597H–AUTO–09/09 5. Electrical Characteristics, 3-V Operation Tamb = 25°C, VS = 3V unless otherwise specified. No. 1 Parameters 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1 VS 2.7 3.0 3.3 V C 1 IS 0.7 0.9 1.3 mA B kΩ A 250 mV B Vs V B mA B µA C Supply IIN =0 Output 2.1 Internal pull-up resistor(1) Tamb = 25°C See Figure 7-10 on page 10 1, 3 RPU 2.2 Output voltage low R2 = 2.4 kΩ See Figure 7-10 on page 10 3, 6 VOL 2.3 Output voltage high 3, 1 VOH 2.4 Output current clamping R2 = 0 See Figure 7-10 on page 10 3, 6 IOCL VIN = 0 See Figure 7-10 on page 10 5 IIN_DCMAX 5 IIN_DCMAX –350 µA B 3 IEemin –700 pA B 3 IEemin –1300 pA C 3 IEemax µA D 3 Input DC current 3.2 Input DC current VIN = 0; Vs = 3V See Figure 7-3 on page 7 Tamb = 25°C 3.4 3.5 VS – 0.25 8 Input 3.1 3.3 30/40 Minimum detection Test signal: threshold current See Figure 7-9 on page 10 See Figure 7-1 on page 7 VS = 3V Tamb= 25°C, IIN_DC=1 µA Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 7-8 on page 9 3 µA at 100 Hz BER = 50(2) Maximum detection threshold current with VIN > 0V Test signal: See Figure 7-9 on page 10 VS = 3V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 7-8 on page 9 BER = 5%(2) –150 –200 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 4 T2526 4597H–AUTO–09/09 T2526 5. Electrical Characteristics, 3-V Operation (Continued) Tamb = 25°C, VS = 3V unless otherwise specified. No. 4 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) GVARMIN -5 dB D 4.3 Total internal amplification(3) GMAX 71 dB D 4.4 Center frequency fusing accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 Overall accuracy center frequency of bandpass Tamb = 0 to 70°C 4.7 BPF bandwidth –3 dB; f0 = 38 kHz; See Figure 7-7 on page 9 VS = 3V, Tamb = 25°C f03V_FUSE –2.5 f0 +2.5 % A f03V –5.5 f0 +3.5 % C f03V –4.5 f0 +3.0 % C kHz C B 3.8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 6. Electrical Characteristics, 5-V Operation Tamb = 25°C, VS = 5V unless otherwise specified. No. 5 Parameters 5.1 Supply-voltage range 5.2 Supply current 6 Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5.0 5.5 V C 1 IS 0.9 1.2 1.6 mA B kΩ A 250 mV B Vs V B mA B Supply IIN =0 Output 6.1 Internal pull-up resistor(1) Tamb = 25°C See Figure 7-10 on page 10 1, 3 RPU 6.2 Output voltage low R2 = 2.4 kΩ See Figure 7-10 on page 10 3, 6 VOL 6.3 Output voltage high 3, 1 VOH 6.4 Output current clamping 3, 6 IOCL R2 = 0 See Figure 7-10 on page 10 30/40 VS – 0.25 8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 5 4597H–AUTO–09/09 6. Electrical Characteristics, 5-V Operation (Continued) Tamb = 25°C, VS = 5V unless otherwise specified. No. 7 Parameters Test Conditions Pin Symbol Min. 5 IIN_DCMAX –400 Typ. Max. Unit Type* µA C Input VIN = 0 See Figure 7-10 on page 10 7.1 Input DC current 7.2 Input DC-current V = 0; Vs = 5V See Figure 7-4 on page IN Tamb = 25°C 8 5 IIN_DCMAX –700 µA B 7.3 Min. detection threshold current See Figure 7-2 on page 7 3 IEemin –850 pA B 3 IEemin –2000 pA C 3 IEemax µA D 7.4 7.5 8 Test signal: See Figure 7-9 on page 10 VS = 5V Tamb = 25°C IIN_DC = 1 µA Min. detection square pp threshold current with burst N = 16 AC current disturbance f = f ; t 0 PER = 10 ms IIN_AC100 = 3 µA at Figure 7-8 on page 9 100 Hz BER = 50(2) Max. detection threshold current with VIN > 0V Test signal: See Figure 7-9 on page 10 VS = 5V, Tamb = 25° C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 7-8 on page 9 BER = 5%(2) –500 Controlled Amplifier and Filter 8.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 8.2 Minimum value of variable gain (CGA) GVARMIN –5 dB D 8.3 Total internal amplification(3) GMAX 71 dB D 8.4 Resulting center frequency fusing accuracy f05V f03V-FUSE + 0.5 % A f0 fused at VS = 3V VS = 5V, Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 6.1 ESD All pins ⇒2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 6.2 Reliability Electrical qualification (1000h) in molded plastic package 6 T2526 4597H–AUTO–09/09 T2526 7. Typical Electrical Curves at Tamb = 25°C Figure 7-1. IEemin versus IIN_DC, VS = 3V 100 IEemin (nA) VS = 3V f = f0 10 1 0.1 0.1 1 10 100 1000 100 1000 IIN_DC (µA) Figure 7-2. IEemin versus IIN_DC, VS = 5V 100 IEemin (nA) VS = 5V f = f0 10 1 0.1 0.1 1 10 IIN_DC (µA) Figure 7-3. VIN versus IIN_DC, VS = 3V 3.5 VS = 3V f = f0 3.0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) 7 4597H–AUTO–09/09 Figure 7-4. VIN versus IIN_DC, VS = 5V 3.5 VS = 5V f = f0 3.0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) Figure 7-5. Data Transmission Rate, VS = 3V 5000 4500 VS = 3V 4000 Short burst Bits/s 3500 3000 2500 Standard type 2000 1500 Lamp type 1000 500 0 25 35 45 55 65 75 85 f0 (kHz) Figure 7-6. Data Transmission Rate, VS = 5V 5000 4500 VS = 5V 4000 Short burst Bits/s 3500 Standard type 3000 2500 Lamp type 2000 1500 1000 500 0 25 35 45 55 65 75 85 f0 (kHz) 8 T2526 4597H–AUTO–09/09 T2526 Figure 7-7. Typical Bandpass Curve 1.1 VS = 3V Relative Amplitude 1.0 0.9 0.8 Bandwidth (-3 dB) 0.7 0.6 0.5 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f/f0/B; B => –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 Figure 7-8. Illustration of Used Terms Example: f = 30 kHz, burst with 16 pulses, 16 periods 1066 µs Period (P = 16) Burst (N = 16 pulses) 533 µs IN 1 7 16 7 7 33 µs OUT t DON tDOFF 533 µs Envelope 16 Envelope 1 17056 µs/data word OUT Telegram pause Data word Data word t 17 ms TREF = 62 ms 9 4597H–AUTO–09/09 Figure 7-9. Test Circuit I Ee = ΔU1/400 kΩ ΔU1 VDD = 3V to 5V 400 kΩ 1 nF IIN_DC R1 = 220Ω VS IEe IIN 20 kΩ IIN_AC100 IN T2526 1 nF VPULSE OUT GND ΔU2 C1 I IN_DC = ΔU2/40 kΩ 20 kΩ f0 + 4.7 µF 16 DC + tPER = 10 ms Figure 7-10. Application Circuit VDD = 3V to 5V (1) optional R2(1) > 2.4 kΩ R1 = 220Ω RPU IS VS IOCL IN T2526 IIN Microcontroller OUT GND + IIN_DC 10 IEe C1 4.7 µF VIN VO C2(1) = 470 pF T2526 4597H–AUTO–09/09 T2526 8. Chip Dimensions Figure 8-1. Chip Size in µm 1210, 1040 GND IN 336,906 783,887 scribe length VS T2526 55,652 55,62 Fusing OUT 0,0 width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: Length inclusive scribe 1.16 mm Width inclusive scribe 1.37 mm Thickness 290 µ ± 5% Pads 90 µ × 90 µ Fusing pads 70 µ × 70 µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2 Thickness 0.7/0.3 µm 1. Value depends on manufacture location. 11 4597H–AUTO–09/09 9. Ordering Information Delivery: unsawn wafers (DDW) in box Extended Type Number PL(2) RPU(3) D(4) T2526S0xx(1)C-DDW 2 30 2179 T2526S1xx C-DDW 1 30 2179 T2526S2xx(1)C-DDW 2 40 1404 T2526S3xx(1)C-DDW 1 40 1404 T2526S6xx(1)C-DDW 2 30 3415 1 30 3415 (1) (1) T2526S7xx C-DDW Notes: Type(5) Standard type: ≥ 10 pulses, enhanced sensibility, high data rate Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: ≥ 6 pulses, enhanced data rate 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request) 2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see electrical characteristics) 4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 7-8 on page 9) 5. On request: noise type, data rate type 9.1 Pad Layout Figure 9-1. Pad Layout 1 GND IN OUT T2526 Fusing VS Figure 9-2. Pad Layout 2 (6) (5) GND IN (1) VS T2526 (3) OUT 12 Fusing T2526 4597H–AUTO–09/09 T2526 10. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4597H-AUTO-09/09 • Put datasheet in newest template • Ordering Information table changed 4597G-AUTO-10/06 • • • • 4597F-AUTO-04/06 • Section 9 “Ordering Information” on page 11 changed 4597E-AUTO-04/06 • Put datasheet in a new template • Section 8 “Chip Dimensions” on page 10 changed 4597D-AUTO-08/05 • • • • Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 5 “Electrical Characteristics, 3-V Operation” number 3.4 on page 3 changed • Section 6 “Electrical Characteristics, 5-V Operation” number 7.3 and 7.4 on page 5 changed • Section 9 “Ordering Information” on page 11 changed Put datasheet in a new template First page: Pb-free logo added Page 11: Ordering Information changed Page 2, 3, 5, 11, 13: SO8 deleted 13 4597H–AUTO–09/09 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Unit 1-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon Hong Kong Tel: (852) 2245-6100 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-en-Yvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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