Features • • • • • • • • Active Mixer with Conversion Gain No External LO Driver Necessary Low LO Drive Level Required RF and LO Ports May Be Driven Single-ended Single 5-V Supply Voltage High LO-RF Isolation Broadband Resistive 50-Ω Impedances on All Three Ports Small SSO16 Package 800 MHz 1000 MHz High Linearity SiGe Active Receive Mixer Applications • Digital Communication Systems • 800 MHz to 1000 MHz Transceivers for Base Stations Electrostatic sensitive device. Observe precautions for handling. T0780 Description The T0780 is a high linearity active mixer which is manufactured using Atmel’s advanced Silicon-Germanium (SiGe) technology. This mixer features a frequency range of 800 MHz to 1000 MHz. It operates from a single 5-V supply and provides 10 dB of conversion gain while requiring only 0 dBm input to the integrated LO driver. An IF amplifier is also included. Preliminary The T0780 incorporates internal matching on each RF, IF and LO port to enhance ease of use and to reduce the external components required. The RF and LO inputs can be driven differentially or single-ended. Figure 1. Block Diagram RFP RFN 4 5 1 16 13 IFP IFN LOP 12 LON Rev. 4525D–SIGE–10/03 Pin Configuration Figure 2. Pinning SSOP16 IFP VCC GND RFP RFN GND VCC L1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IFN VCC GND LOP LON GND VCC L2 Pin Description Pin Symbol 1 IFP IF positive output Function 2 VCC 5-V power supply 3 GND Ground 4 RFP RF positive input 5 RFN RF negative input 6 GND Ground 7 VCC 5-V power supply 8 L1 External inductor terminal 9 L2 External inductor terminal 10 VCC 5-V power supply 11 GND Ground 12 LON Local oscillator, negative input 13 LOP Local oscillator, positive input 14 GND Ground 15 VCC 5-V power supply 16 IFN IF negative output Absolute Maximum Ratings All voltages are referred to GND. Parameters Symbol Value Unit VCC 5 to 5.5 V LO input LOP, LON 10 dBm IF input RFP, RFN 15 dBm Operating temperature TOP -40 to +85 °C Storage temperature Tstg -65 to +150 °C Supply voltage 2 T0780 [Preliminary] 4525D–SIGE–10/03 T0780 [Preliminary] Thermal Resistance Parameters Symbol Value Unit Junction ambient RthJA TBD K/W Junction case RthJC 46 °C/W Electrical Characteristics Test Conditions: VCC = +5 V, Tamb = +25°C; RF input: -20 dBm at 900 MHz; LO output: 0 dBm at 700 MHz No. 1 Parameters Test Conditions/Pins Pin Symbol Min. Typ. Max. Unit Type * AC Performance 1.1 RF frequency range fRF 800 1000 MHz B, C 1.11 LO frequency range fLO 500 1000 MHz B, C 1.2 IF frequency range FIF 30 200 300 MHz B, C 1.5 Conversion gain 7 10 1.6 SSB noise figure 1.3 Input IP3 1.4 Input P1dB dB A dB D 19 dBm D 15 RF1 = RF2 = –15 dBm/tone, 1 MHz spacing IP3 15 2 19 5 dBm D (1) dB D 1.7 RF return loss Matched to 50 W 20 1.8 LO return loss Matched to 50 W(1) 20 dB D IF return loss Matched to 50 W 20 dB D LO drive Matched to 50 W 1.9 1.10 2 (1) (1) -3 0 +3 dBm D Isolation Performance 2.1 Leakage (LO-RF) Single-ended configuration -40 -35 dBm D 2.2 Leakage (LO-IF) Single-ended configuration -26 -20 dBm D 2.3 Leakage (RF-IF) Single-ended configuration -40 -35 dBm D 5 5.25 V A 160 180 mA A 3 Miscellaneous 3.1 Supply voltage VCC 3.1 Supply current ICC 4.75 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The return losses shown were measured with the T0780 mounted on Atmel’s FR4 evaluation boards using standard matching practices as indicated on the application schematic page herein. Users following the RF, LO and IF matching guidelines will achieve similar performance. 3 4525D–SIGE–10/03 Typical Device Performance Figure 3. Conversion Gain versus Temperature Conversion Gain vs Tem perature Conversion Gain (dB) 20 16 12 8 -40ºC +25ºC +85ºC 4 0 800 850 900 950 1000 Frequency (MHz) Figure 4. Conversion Gain versus LO Drive, Tamb = 25°C Conversion Gain vs LO Drive T=+25ºC Conversion Gain (dB) 20 16 12 8 Plo=-3dBm Plo=0dBm Plo=+3dBm 4 0 800 850 900 Frequency (MHz) 950 1000 Figure 5. Leakages, Plo = 0 dBm, Prf = -20 dBm, Single-ended Configuration 0 Leakages Plo=0 dBm , Prf=-20 dBm Singled-Ended Configuration (Note 1) LO-RF LO-IF RF-IF Leakage (dBm) -10 -20 -30 -40 -50 -60 800 4 850 900 950 Frequency (MHz) 1000 T0780 [Preliminary] 4525D–SIGE–10/03 T0780 [Preliminary] Figure 6. Input IP3 versus Temerature Input IP3 vs Tem perature Input IP3 (dBm) 30 -40ºC +25ºC +85ºC 25 20 15 10 800 850 900 950 1000 950 1000 Frequency (MHz) Figure 7. Input IP3 versus LO Drive, Tamb = 25°C Input IP3 vs LO Drive T=+25ºC Input IP3 (dBm) 30 25 Plo=-3dBm Plo=0dBm Plo=+3dBm 20 15 10 800 850 900 Frequency (MHz) Figure 8. Noise Figure versus Temperature, Plo = 0 dBm Noise Figure vs Tem perature Plo=0dBm Noise Figure (dB) 20 18 16 14 -40ºC +25ºC +85ºC 12 10 800 850 900 950 1000 Frequency (MHz) 5 4525D–SIGE–10/03 Figure 9. RF and LO Return Loss Tamb = 25°C RF & LO Return Loss (Note 2) T=+25ºC Return Loss (dB) 0 -5 RF RL -10 LO RL -15 -20 -25 -30 600 700 800 900 Frequency (MHz) 1000 Figure 10. IF Return Loss Tamb = 25°C IF Return Loss (Note 2) T=+25ºC Reutrn Loss (dB) 0 -5 -10 -15 -20 -25 -30 30 75 120 165 210 255 300 Frequency (MHz) Figure 11. Input P1dB versus Temperature, Plo = 0 dBm Input P1dB vs Tem perature Plo=0dBm 10 Input P1dB (dBm) -40ºC 8 6 +85ºC 4 2 0 800 6 +25ºC 850 900 Frequency (MHz) 950 1000 T0780 [Preliminary] 4525D–SIGE–10/03 T0780 [Preliminary] Figure 12. Input P1dB versus LO Drive, Tamb = 25°C Input P1dB vs LO Drive T=+25ºC Input P1dB (dBm) 10 Plo=-3dBm Plo=0dBm Plo=+3dBm 8 6 4 2 0 800 850 900 950 1000 Frequency (MHz) Figure 13. Demo Test Board Schematic 5V IFout L1 J1 Vcc C4 1 2 3 4 5 6 7 8 Vcc C6 RFin J2 T2 T1 IC1 C10 Vcc C12 L7 Vcc T0780 C1 C2 C3 16 15 14 13 12 11 10 9 C5 Vcc C7 LOin J3 T3 C11 Vcc C13 L9 Vcc C15 C14 7 4525D–SIGE–10/03 Bill of Material Component Designator Vendor Part Number IC1 Atmel T0780 J1, J2, J3 Johnson Components™ 742-0711-841 T1 Value 1:1 Mini-Circuits® L1 1 µH Würth Elektronik L7, L9 see Table 1 C4, C5, C12, C13 Description SiGe receiver mixer SMA connector, end launch with tab, for 1.07 mm board TC1-1 ® IF transformer 74476401 Inductor, 1210 footprint, minimum 200 mA rating Würth Elektronik 744786110 Inductor, 0603 footprint, high Q series 27 pF Vishay® VJ0402A 270JXXA_ Capacitor, 0402 footprint C14, C15 100 pF Vishay VJ0402A101JXXA_ Capacitor, 0402 footprint C2, C3 120 pF Vishay VJ0402A121JXXA_ Capacitor, 0402 footprint C1 10 µF KEMET® T491A106_010AS ® EHF-FD1618 Tantal chip capacitor, size A T2, T3 1:1 Panasonic RF transformer C6, C10 15 pF Vishay VJ0402A150JXXA_ Capacitor, 402 footprint C7, C11 18 pF Vishay VJ0402A180JXXA_ Capacitor, 402 footprint The T0780 utilizes an IF tank circuit to maximize performance across the entire IF bandwidth. the off-chip inductors L7 and L9 resonate with an on-chip capacitor (4 pF) to provide IF tunability. therefore, L7 and L9 must be selected such that the resonance occurs at the desired IF. The following table provides the inductor values required on the evaluation board for some common intermediate frequencies. By default, all evaluation board are shipped with L7 = L9 = 100 nH, resulting in a 200 MHz resonant IF. Table 1. IF Tank Circuit 8 IF (MHz) Typical L7, L9 (nH) Würth Elektonik Part Number 70 680 744780680 150 150 74478625 200 100 744786110 300 39 744786131 T0780 [Preliminary] 4525D–SIGE–10/03 T0780 [Preliminary] Figure 14. Demo Test Board (Fully Assembled PCB) Figure 15. Recommended Package Footprint In order to avoid soldering problems, plugging of the ground vias under the heat slug is recommended! 31.75 3.0 6.35 0.74 0.4 0.74 3.0 f0.33 via 0.7 0.9 6.9 all units are in mm - Indicates metalization - vias connect pad to underlying ground plane Remark: heatslug must be soldered to GND. 9 4525D–SIGE–10/03 Ordering Information Extended Type Number Package Remarks T0780-6C SSOP16 – Package Information 10 T0780 [Preliminary] 4525D–SIGE–10/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2003. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries, Johnson Components ™ is a trademark of Emerson Electric Co., Würth Elektronik® is a registered trademark of Adolf Würth GmbH & Co. KG, Panasonic® is a registered trademark of Matsushita Electric Industrial Co., Ltd., Mini-Circuits® is a registered trademark of Scientific Components, Vishay ® is a registered trademark of Vishay Intertechnology, Inc., KEMET ® is a registered trademark of KRC Trade Corporation. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4525D–SIGE–10/03