AD ADN2830ACPZ32

a
Continuous Wave Laser
Average Power Controller
ADN2830
FEATURES
Bias Current Range 4 mA to 200 mA
Monitor Photodiode Current 50 A to 1200 A
Closed-Loop Control of Average Power
Laser FAIL and Laser DEGRADE Alarms
Automatic Laser Shutdown, ALS
Full Current Parameter Monitoring
5 V Operation
–40C to +85C Temperature Range
5 mm 5 mm 32-Lead LFCSP Package
GENERAL DESCRIPTION
The ADN2830 provides closed-loop control of the average
optical power of a continuous wave (CW) laser diode (LD)
after initial factory setup. The control loop adjusts the laser
IBIAS to maintain a constant back facet monitor photodiode
(MPD) current and thus a constant laser optical power. The
external PSET resistor is adjusted during factory setup to set
the desired optical power. RPSET is set at 1.23/IAV, where IAV
is the MPD current corresponding to the desired optical power.
Programmable alarms are provided for laser fail (end of life)
and laser degrade (impending fail).
APPLICATIONS
Fiber Optic Communication
To provide monitoring of the MPD current, the MPD can be
connected to the IMPD pin. In this case, the MPD current is
mirrored to the IMPDMON pin to provide a monitor and
internally to the PSET pin to close the control loop.
By closing the feedback using IBMON rather than an MPD
connected to PSET, the device is configured to control a constant
current in the laser rather than a constant optical output power.
FUNCTIONAL BLOCK DIAGRAM
VCC
IBMON
IMPDMON
ALS
FAIL
DEGRADE
MPD
MODE
VCC
GND
VCC
LD
IMPD
GND
IBIAS
CONTROL
PSET
ASET
RPSET
RASET
GND
GND
PAVCAP
GND
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/461-3113
© 2012 Analog Devices, Inc. All rights reserved.
V 10%. All specifications T
ADN2830–SPECIFICATIONS (VTypical= 5values
as specified at 25C.)
CC
Parameter
LASER BIAS (BIAS)
Output Current IBIAS
Compliance Voltage
IBIAS during ALS
ALS Response Time
MONITOR PD (IMPD)
Current
Input Voltage
POWER SET INPUT (PSET)
Capacitance
Input Current
Voltage
Min
Typ
4
1.2
Unit
200
mA
V
μA
μs
40
10
50
1.15
ALARM SET (ASET)
Allowable Resistance Range
Voltage
Hysteresis
1.2
1.15
LOGIC INPUTS (ALS, MODE)
VIH
VIL
2.4
ALARM OUTPUTS (Internal 30 kΩ Pull-Up)
VOH
VOL
2.4
IBMON IMPDMON
IBMON, Division Ratio
IMPDMON Division Ratio
Compliance Voltage
0
SUPPLY
ICC2
VCC
4.5
1.23
1.23
5
1200
1.6
μA
V
80
1200
1.35
pF
μA
V
13
1.35
kΩ
V
%
0.8
V
V
0.4
V
V
VCC – 1.2
A/A
A/A
V
5.5
mA
V
100
1
25
5.0
to TMAX, unless otherwise noted1.
Max
VCC
50
MIN
Conditions/Comments
IBIAS = 0
NOTES
1
Temperature range: –40°C to +85°C.
2
ICC for power calculation is the typical I CC given.
Specifications subject to change without notice.
–2–
REV. B
ADN2830
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25°C, unless otherwise noted.)
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Digital Inputs (ALS, Mode) . . . . . . . . . –0.3 V to VCC + 0.3 V
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . –65°C to +150°C
Junction Temperature (TJ Max ) . . . . . . . . . . . . . . . . . 150°C
θJA Thermal Impedance2 . . . . . . . . . . . . . . . . . . . . 32°C/W
32-Lead LFCSP Package,
Power Dissipation . . . . . . . . . . . . . . (TJ Max – TA)/θJA mW
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
θJA is defined when the part is soldered onto a 4-layer board.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADN2830 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
REV. B
–3–
WARNING!
ESD SENSITIVE DEVICE
ADN2830
24 IBMON
23 IBMON
22 GND3
21 VCC3
20 ALS
19 FAIL
18 DEGRADE
17 MODE
PIN CONFIGURATION
VCC2 25
NC 26
GND2 27
IBIAS 28
GND2 29
GND2 30
IBIAS 31
NC 32
ADN2830
TOP VIEW
GND 1
ASET 2
NC 3
PSET 4
IMPD 5
IMPDMON 6
GND4 7
VCC4 8
PIN 1
INDICATOR
16 NC
15 NC
14 GND1
13 NC
12 VCC5
11 VCC1
10 PAVCAP
9 PAVCAP
NC = NO CONNECT
THE EXPOSED PAD ON THE BOTTOM OF THE
PACKAGE MUST BE CONNECTED TO VCC OR
THE GND PLANE.
PIN FUNCTION DESCRIPTIONS
Pin No.
Mnemonic
Function
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
GND
ASET
NC
PSET
IMPD
IMPDMON
GND4
VCC4
PAVCAP
PAVCAP
VCC1
VCC5
NC
GND1
NC
NC
MODE
DEGRADE
FAIL
ALS
VCC3
GND3
IBMON
IBMON
VCC2
NC
GND2
IBIAS
GND2
GND2
IBIAS
NC
Supply Ground
Alarm Current Threshold Set Pin
No Connect
Average Optical Power Set Pin
Monitor Photodiode Input
Mirrored Current from Monitor Photodiode—Current Source
Supply Ground
Supply Voltage
Average Power Loop Capacitor
Average Power Loop Capacitor
Supply Voltage
Supply Voltage
No Connect
Supply Ground
No Connect
No Connect
Mode Select: Tied to ALS = Standalone, High = Parallel Current Booster
DEGRADE Alarm Output
FAIL Alarm Output
Automatic Laser Shutdown
Supply Voltage
Supply Ground
Bias Current Monitor Output—Current Source
Bias Current Monitor Output—Current Source
Supply Voltage
No Connect
Supply Ground
Laser Diode Bias Current
Supply Ground
Supply Ground
Laser Diode Bias Current
No Connect
Exposed Pad
The exposed pad on the bottom of the package must be connected to VCC or the GND plane.
EP
–4–
REV. B
ADN2830
Example:
GENERAL
Laser diodes have current-in to light-out transfer functions as
shown in Figure 1. Two key characteristics of this transfer function are the threshold current, ITH, and slope in the linear region
beyond the threshold current, referred to as slope efficiency (LI).
IFAIL = 50 mA , N = 1∴ IDEGRADE = 45 mA
I ASET =
IBIASTRIP 50 mA
=
= 250 μA
N × 200
200
OPTICAL POWER
*RASET =
P
PAV
I
ITH
LI = P
I
1.23V
1.23
=
= 4.92 kΩ
I ASET
250 μA
The laser degrade alarm, DEGRADE, gives a warning of imminent
laser failure if the laser diode degrades further or environmental conditions continue to stress the laser diode, e.g., increasing temperature.
The laser fail alarm, FAIL, is activated when:
CURRENT
•
•
Figure 1. Laser Transfer Function
CONTROL
A monitor photodiode (MPD) is required to control the laser
diode. The MPD current is fed into the ADN2830 to control
the power, continuously adjusting the bias current in response
to the laser’s changing threshold current and light to current
(LI) slope (slope efficiency).
The ADN2830 uses automatic power control (APC) to maintain
a constant power over time and temperature.
The average power is controlled by the RPSET resistor
connected between the PSET pin and ground. The PSET pin
is kept 1.23 V above GND. For an initial setup, the RPSET resistor can be calculated using the following formula.
1.23 V
RPSET =
I AV
where IAV is average MPD current.
Note the IPSET will change from device to device. It is not
required to know exact values for LI and MPD optical coupling.
LOOP BANDWIDTH SELECTION
Capacitor values greater than 22 nF are used to set the actual
loop bandwidth. This capacitor is placed between the PAVCAP
pin and ground. It is important that the capacitor is a low leakage multilayer ceramic with an insulation resistance greater than
100 GΩ or a time constant of 1000 sec, whichever is less.
The ASET threshold is reached.
The ALS pin is set high. This shuts off the modulation and
bias currents to the laser diode, resulting in the MPD current
dropping to zero.
DEGRADE will only be raised when the bias current exceeds
90% of the ASET current.
MONITOR CURRENTS
IBMON and IMPDMON are current controlled current sources
from VCC. They mirror the bias and MPD current for increased
monitoring functionality. An external resistor to GND gives a
voltage proportional to the current monitored. If the IMPDMON
function is not used, the IMPD pin must be grounded and the
monitor photodiode must be tied directly to the PSET pin.
AUTOMATIC LASER SHUTDOWN
When ALS is logic high, the bias current is turned off. Correct
operation of ALS can be confirmed by the fail alarm being
raised when ALS is asserted. Note that this is the only time
DEGRADE will be low while FAIL is high.
MODE
The MODE feature on the ADN2830 allows the user to operate
more than one ADN2830 in parallel current boosting mode to
achieve up to N ⫻ 200 mA of bias current (N is the number of
ADN2830s in parallel). When using parallel boosting mode, one
device is run as the master, the other as the slave. The MODE
pin on the master is tied to ALS and the MODE pin on the
slave is tied high (see Figure 3 for reference circuit).
ALARM INTERFACES
ALARMS
The ADN2830 has two active high alarms, DEGRADE and
FAIL. A resistor between ground and the ASET pin is used to
set the current at which these alarms are raised. The current
through the ASET resistor is a ratio of (N ⫻ 200):1 to the FAIL
alarm threshold (N is the number of ADN2830s in parallel).
The DEGRADE alarm will be raised at 90% of this level.
The FAIL and DEGRADE outputs have an internal 30 kΩ
pull-up resistor that is used to pull the digital high value to VCC.
However, the alarm output may be overdriven with an external
resistor allowing the alarm interfacing to non-VCC levels.
Non-VCC alarm output levels must be below the VCC used for
the ADN2830.
*The smallest value for R ASET is 1.2 kΩ, as this corresponds to the IBIAS
maximum of N ⫻ 200 mA.
REV. B
–5–
ADN2830
POWER CONSUMPTION
The ADN2830 die temperature must be kept below 125°C.
The exposed paddle should be connected in such a manner that
it is at the same potential as the ADN2830 ground pins. Power
consumption can be calculated using the following formulas.
TDIE = TAMBIENT + θ JA × P
ICC = ICCMIN
(
P = VCC × ICC + IBIAS × VBIAS _ PIN
)
VCC
FAIL
DEGRADE
VCC
VCC2
MODE
DEGRADE
ALS
FAIL
VCC3
GND3
IBMON
LD
IBMON
24
16
NC
NC
NC
GND1
GND2
IBIAS
NC
ADN2830
GND2
VCC5
VCC1
IBIAS
PAVCAP
1
VCC
VCC4
100nF
8
NC = NO CONNECT
1F
PAVCAP
GND4
IMPD
PSET
NC
32
ASET
NC
IMPDMON
GND2
GND
MPD
10F
GND
PLACE 100nF CAP
CLOSE TO PIN 8
Figure 2. Test Circuit, Standalone Mode, IMPD Input Not Used
–6–
REV. B
ADN2830
VCC
FAIL
DEGRADE
VCC
VCC2
MODE
DEGRADE
ALS
FAIL
VCC3
GND3
IBMON
IBMON
24
LD
MPD
16
NC
NC
NC
GND1
GND2
IBIAS
NC
ADN2830
GND2
VCC5
VCC1
IBIAS
PAVCAP
VCC
PAVCAP
100nF
VCC4
GND4
IMPD
PSET
NC
GND
32
ASET
NC
IMPDMON
GND2
1
100nF
10F
GND
8
PLACE 100nF CAP
CLOSE TO PIN 8
NC = NO CONNECT
VCC2
MODE
DEGRADE
FAIL
ALS
VCC3
GND3
IBMON
IBMON
24
16
NC
NC
NC
GND1
GND2
IBIAS
NC
ADN2830
GND2
VCC5
VCC1
IBIAS
PAVCAP
VCC4
PAVCAP
GND4
IMPD
PSET
NC
GND
ASET
NC
32
IMPDMON
GND2
1
8
NC = NO CONNECT
Figure 3. Test Circuit, Second ADN2830 Used in Parallel Current Boosting Mode to Achieve 400 mA Max IBIAS
REV. B
–7–
ADN2830
VCC
FAIL
DEGRADE
VCC
VCC
VCC2
MODE
DEGRADE
ALS
FAIL
VCC3
GND3
IBMON
IBMON
24
LD
MPD
16
NC
NC
R2
R1
NC
GND1
GND2
IBIAS
NC
ADN2830
VCC5
GND2
VCC1
IBIAS
PAVCAP
VCC
PAVCAP
100nF
VCC4
GND4
IMPD
PSET
NC
GND
32
ASET
NC
IMPDMON
GND2
1
10F
GND
8
NC = NO CONNECT
PLACE 100nF CAP
CLOSE TO PIN 8
NOTES
1.FOR DIGITAL CONTROL, REPLACE RPSET WITH A DIGITAL POTENTIOMETER FROM ANALOG DEVICES:
ADN2850 10-BIT RESOLUTION, 35 ppm/C TC, EEPROM; AD5242 8-BIT RESOLUTION, 30 ppm/C TC.
2.TOTAL CURRENT TO LASER = IBIAS + IBIAS R1/R2.
3.FOR BEST ACCURACY, SIZE R1 TO HAVE A MAXIMUM VOLTAGE DROP ACROSS IT WITHIN THE HEADROOM
CONSTRAINTS.
4.FOR 250 mA EXTRA IBIAS (450 mA TOTAL) FROM AMP1, USE AD8591 AMPLIFIER. AMP1 IS THE OPERATIONAL AMPLIFIER
SHOWN IN THIS FIGURE.
5.FOR 350 mA EXTRA IBIAS (550 mA TOTAL) FROM AMP1, USE ANALOG DEVICES’ SSM2211 AMPLIFIER. AMP1 IS THE
OPERATIONAL AMPLIFIER SHOWN IN THIS FIGURE.
Figure 4. The ADN2830 Configured with Current Multiplier
VCC
FAIL
DEGRADE
VCC2
R2
MODE
DEGRADE
FAIL
ALS
VCC3
VCC
GND3
24
IBMON
VCC
R1
R2
IBMON
CURRENT GAIN =
NC
R1
NC
GND1
GND2
IBIAS
VCC
NC
ADN2830
VCC5
GND2
GND2
VCC1
IBIAS
PAVCAP
1
VCC
PAVCAP
100nF
VCC4
GND4
IMPD
PSET
GND
MPD
NC
32
VCC
ASET
NC
IMPDMON
AD820
LD
16
NC
8
10F
GND
PLACE 100nF CAP
CLOSE TO PIN 8
NC = NO CONNECT
Figure 5. The ADN2830 Configured as Average Power Controller (Bias Current Sourced)
–8–
REV. B
ADN2830
VCC
FAIL
DEGRADE
VCC
LD
VCC2
MODE
DEGRADE
ALS
FAIL
VCC3
GND3
IBMON
IBMON
24
16
NC
NC
NC
GND1
GND2
IBIAS
NC
ADN2830
VCC5
GND2
VCC1
IBIAS
PAVCAP
VCC
PAVCAP
1
100nF
VCC4
GND4
IMPD
PSET
NC
GND
32
ASET
NC
IMPDMON
GND2
8
10F
GND
PLACE 100nF CAP
CLOSE TO PIN 8
NC = NO CONNECT
Figure 6. The ADN2830 Configured as a Controlled Current
Source by Feeding Back the Bias Monitor Current to RPSET
REV. B
–9–
ADN2830
OUTLINE DIMENSIONS
0.30
0.25
0.18
32
25
0.50
BSC
1
24
TOP VIEW
0.80
0.75
0.70
8
16
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.20 REF
SEATING
PLANE
3.25
3.10 SQ
2.95
EXPOSED
PAD
17
0.50
0.40
0.30
PIN 1
INDICATOR
9
BOTTOM VIEW
0.25 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-WHHD.
112408-A
PIN 1
INDICATOR
5.10
5.00 SQ
4.90
Figure 7. 32-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
5 mm × 5 mm Body, Very Very Thin Quad
(CP-32-7)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
ADN2830ACPZ32
ADN2830-EVALZ
1
Temperature Range
−40°C to +85°C
Package Description
32-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
Evaluation Board
Package Option
CP-32-7
Z = RoHS Compliant Part.
REVISION HISTORY
3/12—Rev. A to Rev. B
Added EPAD Notation ..................................................................... 4
Updated Outline Dimensions ........................................................10
Changes to Ordering Guide ...........................................................10
6/03—Rev. 0 to Rev. A
Changes to Absolute Maximum Ratings ........................................ 3
Updated Outline Dimensions ........................................................10
©2012 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D03020-0-3/12(B)
–10–
REV. B