QTP#092201:AUTOMOTIVE PSOC RADON DEVICE CY8C24894 FAMILY S4AD-5, FAB4

Document No. 001-58835 Rev. *B
ECN #: 4657009
Cypress Semiconductor Automotive
Product Qualification Report
QTP# 092201 VERSION *B
February 2015
Automotive PSoC Radon Device Family
S4AD-5, Fab4
Automotive PSoC®
CY8C24894
PROGRAMMABLE SYSTEM-ON-CHIP
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
PRODUCT QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
054603
PSoC Device Family on Automotive Technology S4AD-5, Fab4
Oct 06
092201
Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology
Dec 09
Company Confidential
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Page 2 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose:
Marketing Part #:
Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology
CY8C24894
Device Description:
3.3V Automotive 24MHz Programmable System on Chip
Cypress Division:
Cypress Semiconductor Corporation – Programmable System Division (PSD)
TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5
Number of Metal Layers:
2
Metal
Metal 1: 500Å Ti /6000Å Al / 300Å TiW
Composition: Metal 2: 500Å Ti /8000Å Al / 300Å TiW
Passivation Type and Materials:
7000Å Oxide TeOs / 6000Å Nitride
Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 um
Gate Oxide Material/Thickness (MOS):
SiO2, 110Å
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor - Bloomington, MN
Die Fab Line ID/Wafer Process ID:
Fab4, S4AD-5 CMI, Sonos
PACKAGE AVAILABILITY
PACKAGE
56-Lead QFN
ASSEMBLY FACILITY SITE
Amkor-Seoul Korea (SEOUL-L)
Company Confidential
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Page 3 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
LY56
Package Outline, Type, or Name:
56-Lead QFN
Mold Compound Name/Manufacturer:
Hitachi EME-G700
Mold Compound Flammability Rating:
V-O per UL94
Mold Compound Alpha Emission Rate:
N/A
Oxygen Rating Index:
N/A
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Ni-Pd-Au
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
8290
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-50786
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil
Thermal Resistance Theta JA °C/W:
23C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001−16573
Name/Location of Assembly (prime) facility:
Amkor-Korea (L)
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 4 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
High Temperature Operating Life
Early Failure Rate
NVM Endurance /High
Temperature Operating Life Latent
Failure Rate
Test Condition
(Temp/Bias)
AEC-Q100-008 and JESD22-A108
Dynamic Operating Condition, Vcc Max = 5.5V, 125C
AEC-Q100-005 and JESD22-A108
Result
P/F
P
P
Dynamic Operating Condition, Vcc Max = 5.5V, 125C
High Accelerated Saturation Test
(HAST)
JESD22-A110, 130C, 5.25V, 85%RH
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
Temperature Cycle
JESD22-A104, -65C to 150C
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
P
Pressure Cooker
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
JESD22-A102, 121C, 100%RH, 15 Psig
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
High Temperature Storage
JESD22-A103, 150  5C no bias
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
AEC-Q100-002
500V/1000V/1500V/2000V
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
AEC-Q100-002
200V/500V/750V
P
Acoustic Microscopy
JEDEC JSTD-020
P
Lead Integrity
JESD22-B105
P
Wire Ball Shear
AEC-Q100-001
P
Wire Bond Pull
Mil-Std 883, Method 2011
P
Electrical Distribution
AEC-Q100-009
P
NVM Endurance/Data Retention
AEC-Q100-005, 150C
P
External Visual
MIL-PRF-38535, MILSTD-883, METHOD 2009
P
Physical Dimensions
JESD22-B100/108
P
Solderability
JESD22-B102
P
Static Latch-up
AEC-Q100-004, 125C, 5.79V,  100mA
P
AEC-Q100-004, 125C, 5.4V,  200mA, 6.5V,  240mA
Company Confidential
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Page 5 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
NVM Endurance / High Temperature
Operating Life Early Failure Rate
High Temperature Operating Life1,2
Long Term Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure
Rate
10,506 Devices
0
N/A
N/A
0 PPM
0
0.7
55
33 FIT
500,712 HRs
1
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate..
3 Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at
use conditions.
Company Confidential
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Page 6 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Reliability Test Data
QTP #:
Device
054603
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
15
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
15
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
COMP
15
0
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
5
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
5
0
4547386
610608768
PHIL-M
COMP
60
0
4547386
610608768
PHIL-M
COMP
60
0
4547386
610608768
PHIL-M
COMP
5
0
Failure Mechanism
STRESS: ACOUSTIC, MSL3
STRESS: LEAD INTEGRITY
STRESS: BALL SHEAR
CY8C29466 (8C29466A)
STRESS: BOND PULL
CY8C29466 (8C29466A)
STRESS: CROSS SECTION
CY8C29466 (8C29466A)
STRESS: NVM ENDURANCE / DATA RETENTION TEST
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
1008
79
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
1008
78
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
1008
80
0
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
1396
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
1299
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
COMP
1314
0
STRESS: EXTERNAL VISUAL
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
48
815
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
48
815
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
48
815
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
1000
84
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
1000
84
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
1000
84
0
Company Confidential
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Page 7 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
054603
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
1032
82
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
1032
79
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
1032
80
0
PHIL-M
COMP
3
0
PHIL-M
COMP
3
0
COMP
3
0
COMP
3
0
COMP
3
0
COMP
3
0
STRESS: ESD-CHARGE DEVICE MODEL, 200V
CY8C29466 (8C29466A)
4547386
610608768
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY8C29466 (8C29466A)
4547386
610608768
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
STRESS: STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
6
0
STRESS: ELECTRICAL DISTRIBUTION
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
30
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
30
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
COMP
30
0
STRESS: PHYSICAL DIMENSION
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
10
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
10
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
COMP
10
0
PHIL-M
1000
80
0
STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C
CY8C29466 (8C29466A)
4547386
610608768
Company Confidential
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Page 8 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Reliability Test Data
QTP #:
Device
Fab Lot # Assy Lot #
Assy Loc
054603
Duration
Samp
Rej Failure Mechanism
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
96
80
0
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
168
80
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
96
79
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
168
79
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
96
76
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
168
76
0
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
128
80
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
96
78
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
128
78
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
96
78
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
128
78
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
500
80
0
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
1000
75
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
500
80
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
1000
79
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
1000
80
0
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
15
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
15
0
CY8C29466 (8C29466A)
4549207
610610435
PHIL-M
COMP
15
0
STRESS: SOLDERABILITY
STRESS: WETTING BALANCE
CY8C29466 (8C29466A)
4547386
610608768
PHIL-M
COMP
3
0
CY8C29466 (8C29466A)
4548960
610608766
PHIL-M
COMP
3
0
Company Confidential
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Page 9 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
Assy Loc
092201
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL, 200V
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
COMP
3
0
SEOUL-L
COMP
3
0
SEOUL-L
COMP
3
0
COMP
3
0
COMP
3
0
COMP
3
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY8C24894 (8A24894AC)
4846168
610904365
STRESS: ESD-CHARGE DEVICE MODEL, 750V
CY8C24894 (8A24894AC)
4846168
610904365
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
STRESS:ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
COMP
3
0
STRESS: E-TEST DISTRIBUTION
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
COMP
30
0
CY8C24894 (8A24894AC)
4846833
610904364
SEOUL-L
COMP
30
0
CY8C24894 (8A24894AC)
4844525
610905172
SEOUL-L
COMP
30
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
48
3496
0
CY8C24894 (8A24894AC)
4846833
610904364
SEOUL-L
48
3515
0
CY8C24894 (8A24894AC)
4844525
610905172
SEOUL-L
48
3495
0
COMP
6
0
COMP
6
0
STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/200mA
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
STRESS: STATIC LATCH-UP TESTING, 125C, 6.5V, +/240mA
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 10 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
Assy Loc
092201
Duration
Samp
Rej
Failure Mechanism
STRESS: ELECTRICAL DISTRIBUTION
CY8C24894 (8A24894AC)
4846168
610904365
SEOUL-L
COMP
30
0
CY8C24894 (8A24894AC)
4846833
610904364
SEOUL-L
COMP
30
0
CY8C24894 (8A24894AC)
4844525
610905172
SEOUL-L
COMP
30
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 11 of 12
Document No. 001-58835 Rev. *B
ECN #: 4657009
Document History Page
Document Title:
Document Number:
Rev. ECN
No.
**
2849272
*A
3895754
*B
QTP#092201: AUTOMOTIVE PSOC RADON DEVICE CY8C24894 FAMILY S4AD-5, FAB4
001-58835
Orig. of
Change
NRG
NSR
4657009 HSTO
Description of Change
Created spec
Removed VERSION 1.0 in the QTP# 092201 title page.
Removed the reference Cypress specs in the reliability tests performed
table.
Sunset Review.
Align qualification report based on the new template in the front page
Update Cypress Division to Programmable System Division
Distribution: WEB
Posting:
None
Company Confidential
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Page 12 of 12