Document No.001-87915 Rev. ** ECN # 4026931 Cypress Semiconductor Automotive Product Qualification Report QTP# 054603 June 2013 PSOC DEVICE FAMILY AUTOMOTIVE TECHNOLOGY S4AD-5, FAB4 CY8C29466 CY8C29666 PSoC® Mixed Signal Array CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-87915 Rev. ** ECN # 4026931 PRODUCT QUALIFICATION HISTORY Qual Report 054603 082009 Description of Qualification Purpose PSoC Device Family on Automotive Technology S4AD-5, Fab4 Qualify new MM2 mask on Hydra for Automotive (8A29000AC), S4AD-5 Technology, Fab4 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Date Comp Oct 06 Nov 08 Document No.001-87915 Rev. ** ECN # 4026931 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify PSoC Device Family Automotive Technology S4AD-5, Fab4 Automotive Marketing Part #: CY8C29466, CY8C29666 Device Description: 5V Automotive Programmable System on Chip Cypress Division: Consumer & Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5 Number of Metal Layers: 2 Metal Metal 1: 500Å Ti /6000Å Al / 300Å TiW Composition: Metal 2: 500Å Ti /8000Å Al / 300Å TiW Passivation Type and Materials: 7000Å Oxide TeOs / 6000Å Nitride Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 nm Gate Oxide Material/Thickness (MOS): SiO2, 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4, S4AD-5 CMI, Sonos PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SSOP TAIWAN-T, CHINA-JT, PHIL-AMKOR 48-Lead SSOP CHINA-JT, PHIL-AMKOR Note: Package Qualification included in this report Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-87915 Rev. ** ECN # 4026931 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-Lead SSOP Sumitomo EME-G600 V-O per UL94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-05678 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 90°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−09888 Name/Location of Assembly (prime) facility: Amkor Philippines (M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location CML-R, KYEC-Taiwan Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No.001-87915 Rev. ** ECN # 4026931 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate Test Condition (Temp/B AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C Result P/F P NVM Endurance /High Temperature Operating Life Latent Failure Rate AEC-Q100-005 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C P High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Temperature Cycle JESD22-A104, -65°C to 150°C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P High Temperature Storage JESD22-A103, 150 ± 5°C no bias P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-002 200V/500V P Acoustic Microscopy JEDEC JSTD-020 P Lead Integrity JESD22-B105 P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C P External Visual Meet Requirements P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latchup AEC-Q100-004, 125C, 5.79V, ± 100mA P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No.001-87915 Rev. ** ECN # 4026931 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate NVM Endurance / High Temperature Operating 2,445 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 500,712 HRs 0 0.7 55 33 FIT 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No.001-87915 Rev. ** ECN # 4026931 Reliability Test Data QTP #:054603 Device Fab Lot # Assy Lot # Assy Loc CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 5 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 5 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 5 0 STRESS: STRESS: STRESS: Duration Samp Rej Failure Mechanism ACOUSTIC, MSL3 LEAD INTEGRITY BALL SHEAR CY8C29466 (8C29466A) STRESS: BOND PULL CY8C29466 (8C29466A) STRESS: CROSS SECTION CY8C29466 (8C29466A) STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 1396 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 1299 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 1314 0 STRESS: EXTERNAL VISUAL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-87915 Rev. ** ECN # 4026931 Reliability Test Data QTP #:054603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1032 82 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1032 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1032 80 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C29466 (8C29466A) STRESS: 610608768 PHIL-M 4547386 610608768 PHIL-M 4547386 610608768 PHIL-M ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C29466 (8C29466A) STRESS: 4547386 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C29466 (8C29466A) STRESS: 610608768 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C29466 (8C29466A) STRESS: 4547386 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8C29466A) STRESS: 610608768 ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) STRESS: 4547386 4547386 610608768 PHIL-M STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 6 0 STRESS: ELECTRICAL DISTRIBUTION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 30 0 STRESS: PHYSICAL DIMENSION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 10 0 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY8C29466 (8C29466A) 4547386 610608768 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No.001-87915 Rev. ** ECN # 4026931 Reliability Test Data QTP #:054603 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 STRESS: SOLDERABILITY STRESS: WETTING BALANCE CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 3 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-87915 Rev. ** ECN # 4026931 Reliability Test Data QTP #:082009 Device STRESS: Fab Lot # PHIL-M COMP 3 0 4824302 610837905 PHIL-M COMP 3 0 4824302 610837905 PHIL-M 1008 80 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M COMP 3 0 4824302 610837905 PHIL-M COMP 30 0 4824302 N/A N/A COMPARABLE 4824302 N/A N/A COMPARABLE STATIC LATCH-UP TESTING, 125C, 7.88V, +/200Ma CY8C29466 (8A29466A) STRESS: 610837905 SORT YIELD CY8C29466 (8A29466A) STRESS: 4824302 E-TEST YIELD CY8C29466 (8A29466A) STRESS: 0 E-TEST DISTRIBUTION CY8C29466 (8A29466A) STRESS: 3 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 6000V CY8C29466 (8A29466A) STRESS: COMP ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 4000V CY8C29466 (8A29466A) STRESS: PHIL-M ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2000V CY8C29466 (8A29466A) STRESS: 610837905 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1500V CY8C29466 (8A29466A) STRESS: 4824302 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1000V CY8C29466 (8A29466A) STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8A29466A) STRESS: Rej ENDURANCE CY8C29466 (8A29466A) STRESS: Samp ESD-CHARGE DEVICE MODEL, 750V CY8C29466 (8A29466A) STRESS: Duration ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8A29466A) STRESS: Assy Loc ESD-CHARGE DEVICE MODEL, 250V CY8C29466 (8A29466A) STRESS: Assy Lot # 4824302 610837905 PHIL-M COMP 6 0 COMP 3 0 STATIC LATCH-UP TESTING, 125C, 8.66V, +/240mA CY8C29466 (8A29466A) 4824302 610837905 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-87915 Rev. ** ECN # 4026931 Document History Page Document Title: Document Number: QTP # 054603 : PSOC (CY8C29XXX) AUTOMOTIVE, S4AD-5 TECHNOLOGY, FAB4 001-87915 Rev. ECN Orig. of No. Change ** 4026931 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-651 and not in spec format. Initiated spec for QTP 054603 and data from HGA-651 was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards. Deleted previous package assembly information and replaced with existing and qualified assembly site Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11