ATMEL ATC25

Features
• Comprehensive Library of Standard Logic Cells
• ATC25 I/O Cells Designed to Operate with VDD = 2.5V ± 0.25V as Main Target Operating
Conditions
• IO33 Pad Library Provides Interface to 3V Environment
• Oscillators Provide Stable Clock Sources
• Basic Analog Input/Output, Power, Ground and Multiplexer Cells Available,
High-performance Analog Cells Can Be Developed on Request
• Memory Cells Compiled to the Precise Requirements of the Design
• Compatible with Atmel’s Extensive Range of Microcontroller, DSP, Standard Interface
and Application Specific Cells
Cell-based ASIC
Description
The Atmel ATC25 CBIC family is fabricated on a proprietary 0.25 micron five-layermetal CMOS process intended for use with a supply voltage of 2.5V ± 0.25V. The following table shows the range for which Atmel library cells have been characterized.
Summary
Table 1. Recommended Operating Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
DC Supply Voltage
Core and Standard I/Os
2.25
2.5
2.75
V
VDD3
DC Supply Voltage
3V Interface I/Os
3
3.3
3.6
V
VI
DC Input Voltage
0
VDD
V
VO
DC Output Voltage
0
VDD
V
TEMP
Operating Free Air
Temperature Range
-40
+85
°C
Industrial
ATC25
The Atmel cell libraries and megacell compilers have been designed in order to be
compatible with each other. Simulation representations exist for three types of operating conditions; they correspond to three characterization conditions defined as follows:
•
MIN conditions:
TJ = -40°C
VDD (cell) = 2.75V
Process = fast (industrial best case)
•
TYP conditions:
TJ = +25°C
VDD (cell) = 2.5V
Process = typ (industrial typical case)
•
MAX conditions:
TJ = +100°C
VDD (cell) = 2.25V
Process = slow (industrial worst case)
Delays to tri-state are defined as delay to turn off (VGS < VT) of the driving devices.
Output pad drain current corresponds to the output current of the pad when the output
voltage is VOL or VOH. The output resistor of the pad and the voltage drop due to
access resistors (in and out of the die) are taken into account. In order to have accurate timing estimates, all characterization has been run on electrical netlists extracted
from the layout database.
Rev. 1306DS–CBIC–09/02
1
Standard Cell Library
SClib
Decoding the Cell Name
The Atmel Standard Cell Library, SClib, contains a comprehensive set of combinational
logic and storage cells. The SClib library includes cells which belong to the following
categories:
•
Buffers and Gates
•
Multiplexers
•
Flip-flops
•
Scan Flip-flops
•
Latches
•
Adders and Subtractors
The table below shows the naming conventions for the cells in the SClib library. Each
cell name begins with either a two-, three-, or four-letter code that defines the type of
cell. This indicates the range of standard cells available.
Table 2. Cell Codes
2
Code
Description
Code
Description
AD
Adder
INVT
Inverting 3-State Buffer
AH
Half Adder
JK
JK Flip-Flop
AS
Adder/Subtractor
LA
D Latch
AN
AND Gate
MI
Inverting Multiplexer
AOI
AND-OR-Invert Gate
MX
Multiplexer
AON
AND-OR-AND-Invert Gates
ND
NAND Gate
AOR
AND-OR Gate
NR
NOR Gate
BH
Bus Holder
OAI
OR-AND-Invert Gate
BUFB
Balanced Buffer
OAN
OR-AND-OR-Invert Gates
BUFF
Non-Inverting Buffer
OR
OR Gate
BUFT
Non-Inverting 3-State Buffer
ORA
OR-AND Gate
CG
Carry Generator
SD
Multiplexed Scan D Flip-Flop
CLK2
Clock Buffer
SE
Multiplexed Scan Enable D Flip-Flop
DE
D-Enabled Flip-Flop
SRLA
Set/Reset Latches with NAND input
DF
D Flip-Flop
SU
Subtractor
INV0
Inverter
XN
Exclusive NOR Gate
INVB
Balanced Inverter
XR
Exclusive OR Gate
ATC25 Summary
1306DS–CBIC–09/02
ATC25 Summary
Cell Matrices
The following three tables provide a quick reference to the storage elements in the SClib
library. Note that all storage elements feature buffered clock inputs and buffered output.
Table 3. JK Flip-flops
Macro Name
JKBRBx
Set
Clear
1x Drive
2x Drive
•
•
•
•
Table 4. D Flip-flops
Macro
Name
Clear
•
Enabled D
Input
Single
Output
1x Drive
2x Drive
•
•
•
DFCRBx
•
•
•
DFCRQx
•
•
•
DFCRNx
•
•
•
DFNRBx
•
•
DFNRQx
•
•
•
•
•
•
•
•
DENRQx
•
•
•
•
DENRBx
•
•
•
•
•
•
DFBRBx
Set
DFPRBx
•
DEPRQx
•
•
DECRQx
•
•
•
Table 5. Scan Flip-flops
Macro
Name
Set
Clear
1x Drive
2x Drive
•
•
•
•
SDCRBx
•
•
•
SDCRNx
•
•
•
•
SDCRQx
•
•
•
•
SDNRBx
•
•
SDNRNx
•
•
•
SDNRQx
•
•
•
•
•
•
•
•
•
•
•
•
•
•
SDBRBx
SDPRBx
•
•
SECRQx
SENRQx
SEPRQx
•
Single Output
3
1306DS–CBIC–09/02
Input/Output Pad Cell
Libraries
IO25lib and IO33lib
The Atmel Input/Output Cell Library, IO25lib, contains a comprehensive list of input, output, bidirectional and tristate cells. The ATC25 (2.5V) cell library includes a special set
of I/O cells, IO33lib, for interfacing with external 3V devices.
Voltage Levels
The IO25lib library is made up exclusively of low-voltage chip interface circuits powered
by a voltage in the range of 2.25V to 2.75V. The library is compatible with the SClib 2.5volt standard cells library.
Power and Ground Pads
Designers are strongly encouraged to provide three kinds of power pairs for the IO25lib
library. These are “AC”, “DC” and core power pairs. AC power is used by the I/O to
switch its output from one state to the other. This switching generates noise in the AC
power buses on the chip. DC power is used by the I/O to maintain its output in a steady
state. The best noise performance is achieved when the DC power buses on the chip
are free of noise; designers are encouraged to use separate power pairs for AC and DC
power to prevent most of the noise in the AC power buses from reaching the DC power
buses. The same power pairs can be used to supply both DC power to the I/Os and
power to the core without affecting noise performance.
Table 6. VSS Power Pad Combinations
Core
Switching I/O
Quiet I/O
Vssi
VssAC
VssDC
Library Cell
Name
Signal Name
pv25i00
VSS
pv25a00
VSS
•
pv25d00
VSS
•
pv25e00
VSS
•
pv25b00
VSS
•
pv25f00
VSS
Library Cell
Name
Signal Name
pv25i25
VDD
pv25a25
VDD
•
pv25d25
VDD
•
pv25e25
VDD
•
pv25b25
VDD
•
pv25f25
VDD
•
•
•
•
•
•
Table 7. VDD Power Pad Combinations
Core
Switching I/O
Quiet I/O
Vddi
VddAC
VddDC
•
•
•
•
•
4
•
ATC25 Summary
1306DS–CBIC–09/02
ATC25 Summary
Cell Matrices
Table 8. CMOS Pads
CMOS Cell
Name
3-State I/O
Output Only
3-State
Output Only
Drive
Strength
Pad Sites
Used
PC25B01
•
1x
1
PC25B02
•
2x
1
PC25B03
•
3x
1
PC25B04
•
4x
1
PC25B05
•
5x
1
PC25O01
•
1x
1
PC25O02
•
2x
1
PC25O03
•
3x
1
PC25O04
•
4x
1
PC25O05
•
5x
1
PC25T01
•
1x
1
PC25T02
•
2x
1
PC25T03
•
3x
1
PC25T04
•
4x
1
PC25T05
•
5x
1
3-State
Output Only
Drive
Strength
Pad Sites
Used
Table 9. TTL Pads
TTL Cell
Name
3-State I/O
PT25B01
•
2 mA
1
PT25B02
•
4 mA
1
PT25B03
•
8 mA
1
Output Only
PT25O01
•
2 mA
1
PT25O02
•
4 mA
1
PT25O03
•
8 mA
1
PT25T01
•
2 mA
1
PT25T02
•
4 mA
1
PT25T03
•
8 mA
1
Non-Inverting
Inverting
Pad Sites
Used
Table 10. CMOS/TTL Input Only Pad
CMOS
Cell Name
Input Levels
PC25D01
CMOS
PC25D11
CMOS
PC25D21
CMOS
•
PC25D31
CMOS
•
Note:
Schmitt Input
Level Shifter
•
1
•
•
1
1
•
1
All 3-state I/Os, 3-state output only and input pads are also available with pull-up and
pull-down device.
5
1306DS–CBIC–09/02
IO33lib Low Slew Rate
Cells
The IO33lib cells comprise a series of 2.5V/3.3V input/output pads developed for low
supply voltage processes in order to interface 2.5V ASICs to 3.3V environments.
All IO33lib cells are slew rate controlled. Advantage has been taken of the 2.5V to 3.3V
level shifter (slow by construction) to reduce the slew rate without reducing speed.
Table 11. IO33lib Pads
3V Interface
Pad Name
pc33b0x
3-State
I/O
Output
Only
3-State
Output Only
Input
Only
•
Pad Sites
Used
2 mA, 4 mA,
8 mA, 16 mA
1
•
pc33d00
•
pc33o0x
•
pc33t0x
Note:
Drive
Strength
1
2 mA, 4 mA,
8 mA, 16 mA
1
2 mA, 4 mA,
8 mA, 16 mA
1
All 3-state I/Os, 3-state output only and input pads are also available with pull-up and
pull-down device.
Table 12. IO33lib Power Pads
Power Bus Connections
Cell Name
vssi
Pad Sites
Used
1
1
•
pv33e33
6
mixvdd
•
pv33i25
pv33ecrn
vddi
•
pv33e00
pv33i00
mixvss
•
1
•
1
•
2
ATC25 Summary
1306DS–CBIC–09/02
ATC25 Summary
Oscillator Cell
Library Osc25lib
The Atmel Oscillator Library provides stable clock sources. It comprises four oscillators
and one power-on-reset.
Crystal Oscillators
The Atmel two-pad oscillators are designed with the Pierce three-point oscillator structure. For the 32.768 Hz oscillator, the load capacitance must be between 6 pF and 12.5
pF For high-frequency oscillators, the load capactance must be between 15 pF and 20
pF. External capacitors must be added in order to obtain the correct load capacitance.
Clock output is high at off state (onosc = 0).
The oscillators provide a bypass mode (onosc = 1), clock = not (xin).
Table 13 gives the available oscillator cells.
Table 13. Oscillator and POR Cells
Basic Analog Cell
Library ANA25lib,
ANA33lib
Cell Name
Description
OSC25f33K
Low-power, optimized for 32.786 kHz crystal
OSC25f9M
9 MHz crystal oscillator
OSC25f16M
16 MHz crystal oscillator
OSC25f27M
27 MHz crystal oscillator
POR25
Static and dynamic reset with internal hysterisis
The Atmel CBIC analog library makes the following parts available:
•
Multiplexer modules
–
Multiplexers to minimize cross-talk (for use with high-impedance nodes).
–
Multiplexers to minimize ON resistance.
•
Analog input and output cells
•
Analog power and ground cells
A special set of basic analog I/O cells, ANA33lib, is available for interfacing with external
3.3V devices.
7
1306DS–CBIC–09/02
Atmel Compiled
Megacell Library
The Atmel Compiled Megacell Library enables compilation of megacells for the functions Synchronous RAM, High-range Synchronous RAM, Asynchronous RAM,
Asynchronous Dual-port RAM, Asynchronous Two-port RAM and Synchronous ROM,
according to the user’s precise requirements.
The Atmel megacells can be instanced as often as required in designs and can be used
in parallel with cells from all other Atmel CBIC libraries. All the megacell representations
required for schematic entry, simulation, place and route, layout generation, and verification are created automatically.
Compiled Synchronous
RAM Megacells
The Atmel Synchronous RAM compiler has bidirectional or separate I/O ports, and can
be configured in multi-bank form, with a maximum of four banks.
The range of permitted Synchronous RAM megacell configurations is as follows:
Number of bits
128, .. 144K bits
Number of words
32, .. 8K
Word Size
4, .. 36 bits
The following table shows the range of performances for particular Synchronous RAM
configurations under typical conditions.
Configuration
1K x 8 (8K bits)
2K x 16 (32K bits)
4K x 32 (128K bits)
Density (Kbits/mm )
51
58
62
Frequency (MHz)
305
242
169
Dynamic Power
(mW/MHz)
0.17
0.36
0.73
2
Compiled High-range
Synchronous RAM
Megacells
The Atmel High-range Synchronous RAM compiler has bidirectional or separate I/O
ports, and can be configured in multi-bank form, with a maximum of four banks.
The range of permitted High-range Synchronous RAM megacell configurations is as
follows:
Number of bits
16K, .. 2.25M bits
Number of words
2K, .. 32K
Word Size
8, .. 72 bits
The following table shows the range of performances for particular High-range Synchronous RAM configurations under typical conditions.
Configuration
8K x 8 (64K bits)
16K x 16 (256K bits)
32K x 32 (1M bits)
Density (Kbits/mm )
80
84
87
Frequency (MHz)
186
120
71
Dynamic Power
(mW/MHz)
0.29
0.55
1.22
2
8
ATC25 Summary
1306DS–CBIC–09/02
ATC25 Summary
Compiled Asynchronous
RAM Megacells
The Atmel Asynchronous RAM compiler has bidirectional or separate I/O ports, and can
be configured in multi-bank form, with a maximum of four banks.
The range of permitted Asynchronous RAM megacell configurations is as follows:
Number of bits
128, .. 128K bits
Number of words
16, .. 4K
Word Size
8, .. 36 bits
The following table shows the range of performances for particular Asynchronous RAM
configurations under typical conditions.
Configuration
1K x 8 (8K bits)
2K x 16 (32K bits)
4K x 32 (128K bits)
Density (Kbits/mm )
40
40
50
Frequency (MHz)
380
378
293
Dynamic Power
(mW/MHz)
0.24
0.38
0.63
2
Compiled Asynchronous
Dual-port RAM
Megacells
The Atmel Asynchronous Dual-port RAM has bidirectional or separate I/O ports, and
can be configured in multi-bank form, with a maximum of four banks.
The range of permitted Asynchronous Dual-port RAM Megacell configurations is as
follows:
Number of bits
128, .. 16K
Number of words(1)
64, .. 2K
Word Size(1)
2, .. 36 bits
Note:
1. Must be the same for both ports.
The following table shows the range of performances for particular Asynchronous Dualport RAM configurations under typical conditions.
Configuration
128 x 8 (1K bits)
256 x 16 (4K bits)
512 x 32 (16K bits)
Density (Kbits/mm )
22
32
36
Frequency (MHz)
305
274
248
Dynamic Power
(mW/MHz)
0.09
0.31
0.41
2
9
1306DS–CBIC–09/02
Compiled Two-port RAM
Megacells
The Atmel Asynchronous Two-port RAM can be configured in multi-bank form, with a
maximum of four banks, and can be used to achieve FIFO functions.
The range of permitted Asynchronous Two-port RAM Megacell configurations is as
follows:
Number of bits
128, .. 36K
Number of words(1)
64, .. 2K
Word Size(1)
2, .. 36 bits
Note:
1. Must be the same for both ports.
The following table shows the range of performances for particular Asynchronous Twoport RAM configurations under typical conditions.
Configuration
256 x 8 (2K bits)
512 x 16 (8K bits)
1K x 32 (32K bits)
Density (Kbits/mm )
20
24
27
Frequency (MHz)
385
357
294
Dynamic Power
(mW/MHz)
0.06
0.10
0.18
2
Compiled Synchronous
ROM Megacells
The Atmel Synchronous ROM is diffusion programmable and is applicable in low power
solutions. It can be configured in multi-bank form, with a maximum of four banks.
The range of permitted Synchronous ROM Megacell configurations is as follows:
Number of bits
Number of words
Word Size
256, .. 512K
64, .. 8K
4, .. 72 bits
The following table shows the range of performances for particular Synchronous ROM
configurations under typical conditions.
Configuration
2K x 8 (16K bits)
4K x 16 (64K bits)
8K x 32 (256K bits)
Density (Kbits/mm )
400
568
669
Frequency (MHz)
198
187
140
Dynamic Power
(mW/MHz)
0.13
0.26
0.54
2
10
ATC25 Summary
1306DS–CBIC–09/02
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Printed on recycled paper.
1306DS–CBIC–09/02
0M