PDTA124X series PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Rev. 08 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA124XE SOT416 SC-75 - PDTC124XE PDTA124XEF SOT490 SC-89 - PDTC124XEF PDTA124XK SOT346 SC-59A TO-236 PDTC124XK PDTA124XM SOT883 SC-101 - PDTC124XM PDTA124XS[1] SOT54 SC-43A TO-92 PDTC124XS PDTA124XT SOT23 - TO-236AB PDTC124XT PDTA124XU SOT323 SC-70 - PDTC124XU [1] Also available in SOT54A and SOT54 variant packages (see Section 2) 1.2 Features n Built-in bias resistors n Simplifies circuit design n 100 mA output current capability n Reduces component count n Reduces pick and place costs 1.3 Applications n Digital applications n Controlling IC inputs n Cost-saving alternative for BC857 series in digital applications n Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −50 V IO output current (DC) - - −100 mA R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio 1.7 2.1 2.6 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 3 1 R2 001aab347 3 006aaa148 SOT54A 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 1 R2 3 001aab348 3 006aaa148 SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 3 1 R2 001aab447 3 006aaa148 SOT23; SOT323; SOT346; SOT416; SOT490 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym003 SOT883 1 input (base) 2 GND (emitter) 3 output (collector) 1 3 3 2 R1 1 Transparent top view R2 2 sym003 PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 2 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTA124XE SC-75 plastic surface mounted package; 3 leads SOT416 PDTA124XEF SC-89 plastic surface mounted package; 3 leads SOT490 PDTA124XK SC-59A plastic surface mounted package; 3 leads SOT346 PDTA124XM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTA124XS[1] SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTA124XT - plastic surface mounted package; 3 leads SOT23 PDTA124XU SC-70 plastic surface mounted package; 3 leads SOT323 [1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9) 4. Marking Table 5. Marking codes Type number Marking code[1] PDTA124XE 31 PDTA124XEF 31 PDTA124XK 44 PDTA124XM DK PDTA124XS TA124X PDTA124XT *47 PDTA124XU *44 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 3 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −7 V VI input voltage positive - +7 V negative - −40 V IO output current (DC) - −100 mA ICM peak collector current - −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - 150 mW SOT490 [1][2] - 250 mW SOT346 [1] - 250 mW SOT883 [2][3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW −65 +150 °C Tstg storage temperature Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 4 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit SOT416 [1] - - 833 K/W SOT490 [1][2] - - 500 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −50 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A - - −1 µA VCE = −30 V; IB = 0 A; Tj = 150 °C - - −50 µA µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −120 hFE DC current gain VCE = −5 V; IC = −5 mA 80 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - - −150 VI(off) off-state input voltage VCE = −5 V; IC = −100 µA - −0.8 −0.5 V VI(on) on-state input voltage VCE = −0.3 V; IC = −2 mA −2 −1.1 - V R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio 1.7 2.1 2.6 Cc collector capacitance - - 3 VCB = −10 V; IE = ie = 0 A; f = 1 MHz PDTA124X_SER_8 Product data sheet mV pF © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 5 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 006aaa198 103 hFE 006aaa199 −103 (1) VCEsat (mV) (2) (3) 102 −102 (1) (2) (3) 10 1 −10−1 −1 −10 −102 −10 −10−1 −1 −10 IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. −102 IC (mA) DC current gain as a function of collector current; typical values 006aaa200 −104 VI(on) (mV) Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa201 −104 VI(off) (mV) (1) (2) −103 −103 (3) (1) (2) (3) −102 −10−1 −1 −10 −102 −102 −10−2 −10−1 IC (mA) VCE = −0.3 V VCE = −5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values PDTA124X_SER_8 Product data sheet −10 IC (mA) (1) Tamb = −40 °C Fig 3. −1 © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 6 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 8. Package outline 1.7 1.5 0.95 0.60 1.8 1.4 3 3 0.45 0.15 1 2 1 0.30 0.15 2 0.25 0.10 0.2 0.1 0.33 0.23 1 1 Dimensions in mm 04-11-04 Package outline SOT416 (SC-75) Dimensions in mm Fig 6. 3 98-10-23 Package outline SOT490 (SC-89) 0.62 0.55 0.55 0.47 1.3 1.0 3.1 2.7 0.6 0.2 0.50 0.46 3 0.30 0.22 3.0 1.7 2.5 1.3 1.02 0.95 0.65 0.30 0.22 1 2 0.50 0.35 1.9 0.26 0.10 2 1 0.20 0.12 0.35 Dimensions in mm Fig 7. 0.5 0.3 1.7 0.95 1.5 0.75 1.75 0.9 1.45 0.7 Fig 5. 0.8 0.6 04-11-11 Package outline SOT346 (SC-59A/TO-236) Fig 8. 03-04-03 Package outline SOT883 (SC-101) 0.45 0.38 4.2 3.6 0.45 0.38 4.2 3.6 Dimensions in mm 0.48 0.40 3 max 1 0.48 0.40 1 2 4.8 4.4 2.54 3 2 4.8 4.4 5.08 1.27 2.54 3 5.2 5.0 14.5 12.7 5.2 5.0 Dimensions in mm Fig 9. 04-11-16 Package outline SOT54 (SC-43A/TO-92) Dimensions in mm 04-06-28 Fig 10. Package outline SOT54A PDTA124X_SER_8 Product data sheet 14.5 12.7 © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 7 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 0.45 0.38 4.2 3.6 3.0 2.8 1.27 2.5 max 1.1 0.9 3 0.45 0.15 0.48 0.40 2.5 1.4 2.1 1.2 1 2 4.8 4.4 2.54 1.27 3 5.2 5.0 1 2 14.5 12.7 1.9 Dimensions in mm 05-01-10 Fig 11. Package outline SOT54 variant 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 12. Package outline SOT23 (TO-236AB) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 13. Package outline SOT323 (SC-70) PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 8 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PDTA124XE SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135 PDTA124XEF SOT490 4 mm pitch, 8 mm tape and reel - -115 - - PDTA124XK SOT346 4 mm pitch, 8 mm tape and reel -115 - - -135 PDTA124XM SOT883 2 mm pitch, 8 mm tape and reel - - - -315 PDTA124XS SOT54 bulk, straight leads - - -412 - SOT54A tape and reel, wide pitch - - - -116 tape ammopack, wide pitch - - - -126 - - -112 - SOT54 variant bulk, delta pinning PDTA124XT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235 PDTA124XU SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135 [1] For further information and the availability of packing methods, see Section 12. PDTA124X_SER_8 Product data sheet 4000 © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 9 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTA124X_SER_8 20090903 Product data sheet - PDTA124X_SER_7 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content PDTA124X_SER_7 20050811 Product data sheet - PDTA124X_SERIES_6 PDTA124X_SERIES_6 20040804 Product specification - PDTA124X_SERIES_5 PDTA124X_SERIES_5 20040407 Product specification - PDTA124X_SERIES_4 PDTA124X_SERIES_4 20030414 Product specification - PDTA124XE_3 PDTA124XEF_2 PDTA124XE_3 19990521 Product specification - PDTA124XE_2 PDTA124XE_2 19981125 Product specification - PDTA124XE_1 PDTA124XE_1 19971215 Product specification - - PDTA124XEF_2 19990525 Preliminary specification - PDTA124XEF_1 PDTA124XEF_1 19981116 Preliminary specification - - PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 10 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTA124X_SER_8 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 08 — 3 September 2009 11 of 12 PDTA124X series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 September 2009 Document identifier: PDTA124X_SER_8