AN43593 Storage Capacitor (VCAP) Options for Cypress nvSRAM.pdf

AN43593
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Author: Harsha Medu
Associated Project: No
Associated Part Family: CY14xxxxx
Software Version: None
Related Application Notes: None
AN43593 discusses the selection criteria for the storage capacitor (V CAP) options for Cypress nvSRAMs. This document
also provides a sample list of a few suitable capacitors as guidance.
Introduction
AutoStore Operation
The nvSRAM architecture uses a one-to-one pairing of a
nonvolatile bit and a fast SRAM bit in each memory cell.
During normal operation, the IC behaves exactly as a
standard fast asynchronous SRAM and is easy to
interface with the microprocessor or microcontroller. When
IC power is disrupted or lost, the event is detected and all
the SRAM bits are saved into the nonvolatile part (within
8 ms) using the stored energy in a small capacitor (V CAP).
This operation is called AutoStore and is described in
more detail in the next section. When power is restored,
data is automatically recalled from the nonvolatile part to
SRAM on power restore and this operation is called
Power-Up RECALL (Hardware RECALL).
This application note discusses the various options for
selecting a suitable storage capacitor for using as V CAP.
While we have listed a few capacitor part numbers in this
application note as example, it should be noted that this
list is only a sample list and does not include all parts from
all vendors. Therefore we recommend you to refer to the
various vendor catalogs when choosing a suitable
capacitor.
www.cypress.com
Figure 1 shows the connection of the storage capacitor
(VCAP) for AutoStore operation.
Figure 1. AutoStore Mode
Note
pin and the pull-up resistor are applicable to parallel
nvSRAMs only.
During normal operation, the device draws current from
VCC to charge a capacitor connected to the VCAP pin. This
stored charge is used by the chip to perform a single
STORE operation. If the voltage on the VCC pin drops
below a minimum threshold (VSWITCH), the part
automatically disconnects the VCAP pin from VCC and
connects it to the internal circuits. A STORE operation is
initiated with power provided by the VCAP capacitor. The
following sections discuss the required characteristics for
the VCAP capacitor.
Document No. 001-43593 Rev. *G
1
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Voltage Rating
Storage Capacitor
Polymer aluminum electrolyte capacitors
VCAP is charged to VCC through an internal charging circuit.
Hence the VCAP should be rated above the maximum VCC
of the part. Some of the newer nvSRAM parts, such as
16 Mbit nvSRAM are designed with an internal charge
pump circuitry, which increases the VCAP pin voltage to
5 V, thereby allowing use of lower values of V CAP required
for providing the necessary charge for AutoStore. In
general, 6.3 V rated capacitors would satisfy the voltage
ratings for VCAP for all VCC ranges of nvSRAM parts.
Higher voltage ratings are recommended for better
capacitor reliability, such as 6.3 V rated capacitors for
2.5 V and 3 V VCC parts, and 10 V rated capacitors for 5 V
VCC parts.
Multilayer ceramic capacitors (MLCC)
ESR
Types
There are different types of capacitors, such as Niobium
oxide, tantalum, electrolyte, film, multilayer ceramic
capacitors, and polymer aluminum electrolytes. The
following four types are selected considering reliability and
stability of capacitors over temperature ranges.




Niobium oxide capacitors
Tantalum capacitors
Note The above recommendation does not limit the types
of capacitors that can be used as VCAP. Any type of
capacitor that meets the VCAP spec range (value, DC
voltage rating) can be used. You have to consider the
application operating conditions while selecting the VCAP.
Key Characteristics
The following are capacitor key characteristics. These
should be taken into consideration while deciding a
suitable VCAP for the nvSRAM.


Value (VCAP - % Tolerance)  VCAP Minimum
(VCAP + % Tolerance)  VCAP Maximum
Charging Current
The storage capacitor (VCAP), which is charged to VCC,
must deliver sufficient power required for an AutoStore
operation. The time taken to charge must also be
reasonably low - it must charge before Power Up RECALL
is complete. These requirements decide the minimum and
maximum value of the capacitor, respectively. The typical
value suggested is the smallest value of VCAP (with 10%
tolerance), which will be sufficient for AutoStore to be
successful. The performance of the nvSRAM will be the
same for any value within the specified range.
Typical values for a few densities are given below.




4 Mbit parallel
68 µF ± 10%
8 Mbit parallel
150 µF ±10%
16 Mbit parallel
22 µF ± 10%
64 Kbit serial
47 µF ± 10%
For minimum and maximum limits, refer to the device
datasheet. See Max Limit for the VCAP.
Tolerance
Tolerance is an important factor to consider when
choosing the capacitor. The capacitor value with worstcase tolerance should be within the VCAP minimum and
maximum limits.
www.cypress.com
Effective series resistance (ESR) of the capacitor
becomes significant when the capacitor operates under
certain conditions, such as high frequency, high current, or
temperature extremes. The storage capacitor, unlike
coupling and decoupling capacitors, does not operate at
high frequencies or current. Therefore, its ESR does not
play a major role in the device operation. Though ESR
value is not a constraint in capacitor selection, a low ESR
of  1 Ω is preferred. The storage capacitor VCAP supplies
the AutoStore current (ICC4 in the datasheet) during power
down and having lower series resistor provides more
operating margin. See Effect of Series Resistor on VCAP
Pin.
The VCAP is charged from the VCC through a charging
circuit. Typically the peak charging current is about 70 mA.
The peak charging current's orders of magnitude is less
than the maximum surge currents, the capacitors are
tested by the manufactures. The maximum charging
currents in nvSRAM would not exceed 350 mA, across
process, voltage, and temperature.
Capacitor Selection Guide
Table 1 summarizes the smallest value of VCAP, which can
be used for the various capacitor ranges for the family of
nvSRAMs. For instance, for a datasheet VCAP specification
of 61 μF (min) to 180 μF (max), the typical is shown as
68 μF, since 68 μF ± 10% is the lowest capacitor value
that can be used in the application. It should be noted that
any capacitor within the min/max specification limits,
namely, 68 μF, 100 μF, or 150 μF would perform the same
way as long as the value of the capacitor (net of tolerance)
is within the specification limit.
If a system uses two or more nvSRAMs, their VCAP pins
can be tied (ganged) together to connect to a single
storage capacitor. The value of the storage capacitor must
be the sum of the individual storage capacitor value
required for the ganged nvSRAMs. See Ganging of VCAP
Pins.
Document No. 001-43593 Rev. *G
2
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Table 1. Capacitor Selection Guide
[1]
Capacitor Types
Parameter
Niobium Oxide
Voltage rating for
nvSRAM VCAP
Tantalum
Polymer
Aluminum
Electrolytic
Capacitors
Ceramic
Multilayer
Capacitors [2]
3 V part
6.3 V / 10 V[3]
6.3 V / 10 V[3]
6.3 V / 10 V[3]
6.3 V / 10 V[3]
5 V part
10 V / 16 V[3]
10 V / 16 V[3]
10 V / 16 V[3]
10 V / 16 V[3]
±20%
±10%
±20%
±20%
±20%
100 µF
68 µF
100 µF
100 µF
100 µF
220 µF
150 µF
220 µF
220 µF
2 x 100 µF[4]
68 µF
47 µF
68 µF
68 µF
100 µF
33 µF
22 µF
33 µF
33 µF
33 µF
Tolerance
For datasheet spec,
VCAP = 61 µF to 180 µF
(68 µF typical)
For datasheet spec,
VCAP = 122 µF to 360 µF
Smallest nominal
capacitor value
(150 µF typical)
For datasheet spec, VCAP =
42 µF to 180 µF
(47 µF typical)
For datasheet spec,
VCAP = 19.8 µF to 82 µF
(22 µF typical)
Notes
1.
Data collected from the manufacturer’s website and other related websites.
2.
Ceramic capacitors have sensitivity to DC bias – capacitance reduces with DC bias voltage. Hence higher voltage rating or higher value
capacitors should be chosen, taking into consideration the DC bias effect on the capacitance. Refer vendor’s technical document for DC
bias characteristics.
3.
Higher voltage rating capacitor can be used for better reliability. For example, a 68 µF / 10 V rated capacitor would provide higher
reliability than a 68 µF / 6.3 V rated capacitor in any application.
4.
The MLCC provides limited options in high capacitance range; therefore, to meet the high capacitance requirement, capacitors can be
connected in parallel to achieve the desired capacitance.
www.cypress.com
Document No. 001-43593 Rev. *G
3
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Recommended Capacitors
Table 2, Table 3, Table 4, and Table 5 provide details of a few capacitors that can be considered when selecting storage
[5]
capacitor (VCAP) for the nvSRAM. This list is not exhaustive and is provided for guidance only. You are recommended to refer
to the various vendor catalogs when choosing the appropriate capacitors.
Table 2. Capacitor Options for VCAP = 68 µF typical
Manufacturer
Manufacturer Part number
Type
Capacitance
Voltage
Rating
Tolerance
Footprint
AVX Corporation
TAJB686K006RNJ
Tantalum
68 µF
6.3 V
±10%
3528-21(EIA)
Kemet
T491C686K006AT
Tantalum
68 µF
6.3 V
±10%
3528-21(EIA)
Vishay
TR3C686K6R3C0200
Tantalum
68 µF
6.3 V
±10%
6032-28(EIA)
Kemet
T491C686K010AT
Tantalum
68 µF
10 V
±10%
6032-28(EIA)
Vishay
TR3B686K010C0900
Tantalum
68 µF
10 V
±10%
3528-21(EIA)
Vishay
TR3C686K010C0225
Tantalum
68 µF
10 V
±10%
6032-28(EIA)
Kemet
T491C686K016AT
Tantalum
68 µF
16 V
±10%
6032-28(EIA)
AVX Corporation
TAJC686K016RNJ
Tantalum
68 µF
16 V
±10%
6032-28(EIA)
Kemet
T491C686K016AT
Tantalum
68 µF
16 V
±10%
6032-28(EIA)
AVX Corporation
NOJB107M006RWJ
Niobium Oxide
100 µF
6.3 V
±20%
3528-21(EIA)
AVX Corporation
NOJC107M006RWJ
Niobium Oxide
100 µF
6.3 V
±20%
6032-28(EIA)
AVX Corporation
NOJD107M006RWJ
Niobium Oxide
100 µF
6.3 V
±20%
7343-31(EIA)
AVX Corporation
NOJD107M010RWJ
Niobium Oxide
100 µF
10 V
±20%
7343-31(EIA)
Kemet
T491B686M006AT
Tantalum
100 µF
6.3 V
±20%
3528-21(EIA)
Kemet
T491C107M010AT
Tantalum
100 µF
10 V
±20%
6032-28(EIA)
AVX Corporation
TPSB107M010R0400
Tantalum
100 µF
10 V
±20%
3528-21(EIA)
AVX Corporation
TPSC107M010R0100
Tantalum
100 µF
10 V
±20%
6032-28(EIA)
Kemet
A700D107M006ATE018
Polymer
Aluminum
Electrolyte
100 µF
6.3 V
±20%
7343-31(EIA)
TDK Corporation
CKG57NX5R1C107M
MLCC
100 µF
16 V
±20%
6.50 mm x
5.50 mm x
5.50 mm
AVX Corporation
TAJC157K006RNJ
Tantalum
150 µF
6.3 V
±10%
6032-28(EIA)
AVX Corporation
TAJC157K010RNJ
Tantalum
150 µF
10 V
±10%
6032-28(EIA)
Kemet
B45197A3157K409
Tantalum
150 µF
16 V
±10%
7343-31(EIA)
Note
5.
Data collected from the manufacturer’s website and other related websites.
www.cypress.com
Document No. 001-43593 Rev. *G
4
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Table 3. Capacitor Options for VCAP = 150 µF typical
Manufacturer
Manufacturer Part number
Type
Capacitance
Voltage
Rating
Tolerance
Footprint
AVX Corporation
TAJC157K006RNJ
Tantalum
150 µF
6.3 V
±10%
6032-28(EIA)
AVX Corporation
TAJC157K010RNJ
Tantalum
150 µF
10 V
±10%
6032-28(EIA)
Kemet
B45197A3157K409
Tantalum
150 µF
16 V
±10%
7343-31(EIA)
Panasonic - ECG
EEFUE0J181R
Polymer
Aluminum
Electrolyte
180 µF
6.3 V
±20%
7343-43(EIA)
AVX Corporation
NOSD227M006R0100
Niobium Oxide
220 µF
6.3 V
±20%
7343-31(EIA)
Kemet
B76006V2279M045
Tantalum
220 µF
6.3 V
±20%
7343-20(EIA)
Kemet
B45196H2227M409
Tantalum
220 µF
10 V
±20%
7343-31(EIA)
AVX Corporation
TAJE227M016RNJ
Tantalum
220 µF
16 V
±20%
7343-43(EIA)
Kemet
A700X227M006ATE015
Polymer
Aluminum
Electrolyte
220 µF
6.3 V
±20%
7343-43(EIA)
Table 4. Capacitor Options for VCAP = 47 µF typical
Manufacturer
Manufacturer Part number
AVX Corporation
TAJB476K006RNJ
Vishay
TR3B476K6R3C0550
AVX Corporation
TAJB686M006RNJ
Vishay
TR3B686M6R3C0650
AVX Corporation
Type
Capacitance
Voltage
Rating
Tolerance
Footprint
Tantalum
47 µF
6.3 V
±10%
3528-21(EIA)
Tantalum
68 µF
6.3 V
±20%
6032-28(EIA)
NOJC686M006RWJ
Niobium Oxide
68 µF
6.3 V
±20%
6032-28(EIA)
AVX Corporation
NOJC686M010RWJ
Niobium Oxide
68 µF
10 V
±20%
6032-28(EIA)
Vishay
TR3B686M010C1500
Tantalum
68 µF
10 V
±20%
3528-21(EIA)
Kemet
A700V686M006ATE028
Polymer
Aluminum
Electrolyte
68 µF
6.3 V
±20%
7343-20(EIA)
AVX Corporation
12106D107KAT2A
MLCC
100 µF
6.3 V
±10%
3225-12
Murata
GRM31CR60J107ME39
MLCC
100 µF
6.3 V
±20%
3216-16
Kemet
C1210C107M9PAC
MLCC
100 µF
6.3 V
±20%
3225-21
TDK Corporation
C3225X5R0J107MT
MLCC
100 µF
6.3 V
±20%
3225-25
MLCC
100 µF
6.3 V
±20%
MLCC
100 µF
10 V
±20%
Taiyo Yuden
Taiyo Yuden
www.cypress.com
JMK325ABJ107MM
JMK325BJ107MY
LMK325ABJ107MM
Document No. 001-43593 Rev. *G
3225-25
3225-20
3225-25
5
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Table 5. Capacitor Options for VCAP = 22 µF typical
Manufacturer
Manufacturer Part number
Kemet
T494C226K010AT
Vishay
TR3C226K010C0400
AVX Corporation
Type
Capacitance
Voltage
Rating
Tolerance
Footprint
Tantalum
22 µF
10 V
±10%
6032-28(EIA)
NOJC336M006RWJ
Niobium Oxide
33 µF
6.3 V
±20%
6032-28(EIA)
AVX Corporation
NOJC336M010RWJ
Niobium Oxide
33 µF
10 V
±20%
6032-28(EIA)
Kemet
T494C336M010AT
Tantalum
33 µF
10 V
±20%
6032-28(EIA)
Vishay
TR3C336M010C0375
Kemet
A700V336M006ATE028
Polymer
Aluminum
Electrolyte
33 µF
6.3 V
±20%
7343-20(EIA)
Murata
GRM31CR60J476ME19L
MLCC
47 µF
6.3 V
±20%
3216 metric
Murata
GRM31CR61A476ME15L
MLCC
47 µF
10 V
±20%
3216 metric
Murata
GRM32ER61A476ME20L
MLCC
47 µF
10 V
±20%
3225 metric
TDK Corporation
C3225X5R1A476M
MLCC
47 µF
10 V
±20%
3225-25
Kemet
C1206C476M8PAC
MLCC
47 µF
10 V
±20%
3225 metric
Summary
The Cypress nvSRAM is the most reliable nonvolatile
SRAM solution and it requires a small external capacitor
(VCAP) for its nonvolatile operation. This application note
provides the electrical requirements of the capacitor and
lists a few capacitor types and values. The list of
capacitors is not exhaustive and is intended as a guideline
for selection of VCAP. There is a wide range of options
available other than the capacitors listed here. You can
choose an appropriate VCAP capacitor depending on the
desired size, cost, reliability, and other conditions, which
the system is subject to. The nvSRAM device operation is
independent of these characteristics.
www.cypress.com
About the Author
Name:
Harsha Medu
Title:
Applications Engineer Staff
Contact:
medu@cypress.com
Document No. 001-43593 Rev. *G
6
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Appendix A
Max Limit for the VCAP
While it is easy to understand the minimum limit for V CAP,
the restriction on the maximum value can be difficult to
comprehend. This restriction is because the nvSRAMs are
specified to be ready for access in tHRECALL time (which is
20 ms in most parts). tHRECALL is the time nvSRAM takes to
complete its boot-up sequence followed by the Power Up
RECALL and be ready for access. This Power Up
RECALL specification guarantees that the VCAP would
charge to a sufficient voltage (and charge) to ensure that
the part will complete a STORE operation, should the
power fail immediately after the tHRECALL time from power
up. If a capacitor of value exceeding the V CAP spec is
used, it is possible that the VCAP would not have charged
to sufficient voltage within the tHRECALL duration. In case
customers prefer using larger value capacitor exceeding
the max value, they should ensure that the nvSRAM first
access after power-up is delayed longer than the tHRECALL
spec to allow capacitor to be sufficiently charged. As a rule
of thumb, for every 10% increase in value over the
maximum
specified
VCAP,
add
an
additional
1 x tHRECALL duration before beginning access to the
nvSRAM.
For example, if nvSRAM device is rated for V CAP = 180 µF
and if you have decided to use 220 µF capacitor instead of
180 µF, which is 22% higher than max value, in this case
nvSRAM first access should be after 3.2 x tHRECALL
(tHRECALL + 2.2 x tHRECALL). Since VCAP (min) to VCAP (max)
range is about 3x, exceeding the max V CAP spec is not
considered necessary in any application.
Effect of Series Resistor on VCAP Pin
A series resistor reduces the voltage to the STORE circuit,
which is powered by the VCAP voltage during AutoStore.
For instance, in the 1 Mbit nvSRAM that has ICC4 = 5 mA,
a 10 Ω series resistor would reduce the voltage from V CAP
pin by 50 mV. This reduction could be significant for the
following reason. The AutoStore operation starts below a
threshold level (VSWITCH); let us assume it starts at 2.4 V.
The charge stored in the capacitor supplies the 5 mA (ICC4)
current required for the STORE operation.
As the STORE operation progresses, the voltage on the
VCAP pin would be decreasing. The STORE operation
takes 8 ms (tSTORE) time. During this 8 ms, the voltage on
the VCAP pin should not go below the minimum voltage
required for proper STORE operation. If we assume the
minimum voltage for proper circuit operation is 1.9 V, then
the STORE operation should finish within the 500 mV drop
(2.4 V minus 1.9 V) on the VCAP pin.
In case we put a series resistor on the VCAP pin, then
because of the drop at VCAP pin due to series resistor it
would mean that AutoStore circuit starts at a lower voltage
and the circuit has power for a shorter time. In this
example, the 500 mV operating range is reduced by the
www.cypress.com
50 mV to 450 mV due to drop in the 10 Ω resistor. A 1 Ω
resistor affects the available voltage range by only 5 mV.
Note that these levels vary across process, voltage, and
temperature (PVT) conditions and are not datasheet
specs. The illustrative values are shown only to help
understand the device operation better.
Ganging of VCAP Pins
nvSRAM allows ganging of its storage capacitor (VCAP) pin
when using more than one nvSRAM in a system. The
individual VCAP pin of two or more nvSRAMs can be tied
(ganged) together to connect to a single storage capacitor,
rather than using individual storage capacitors for the VCAP
pin of each nvSRAM. This ganging scheme saves the
board space and the bill of materials (BOM) cost. When
ganging nvSRAM VCAP pins, the minimum and maximum
size of the storage capacitor for the ganged VCAP pins is
determined by adding the respective minimum and the
maximum rated VCAP size of the individual nvSRAM.
For example, if a system uses two 4 Mbit nvSRAMs with
their rated VCAP minimum and maximum size as 61 µF and
180 µF respectively, then the minimum and the maximum
size of the storage capacitor for the ganged two VCAP pins
should be within 2 x 61 µF (122 µF) and 2 x 180 µF (360
µF). Similarly, if a system uses N numbers of 4 Mbit
nvSRAMs, then the minimum and maximum size of the
storage capacitor for the ganged N VCAP pins should be
within N x 61 µF and N x180 µF.
Ganging of nvSRAM VCAP pins is not allowed in the
following cases:
1. If the system uses more than one nvSRAM device
and each is connected to different VCC power
supplies. In such cases, VCAP ganging is not allowed,
because each nvSRAM will try to charge the storage
capacitor to different voltage levels according their
maximum VVCAP rating, resulting in a conflict in
capacitor charging.
2.
If two or more nvSRAMs are connected to the same
VCC power supply but have different VVCAP (maximum
voltage driven on the VCAP pin by the device)
specifications, then the VCAP ganging is not allowed.
New-generation
nvSRAM
devices
such
as
CY14x116x have been designed with an on-chip
voltage-doubler circuit to reduce the storage capacitor
size on the VCAP pin and have the VCAP pin charging to
5 V max while the CY14x104x devices charge to VCC
max. Therefore, for CY14B116L and CY14B104LA
devices, do not tie VCAP pins together even when both
the parts are connected to the same 3 V power
supply.
As a rule of thumb, ganging of more than one nvSRAM is
allowed only when the ganged nvSRAM VCC is connected
to the same power supply and each nvSRAM has the
same VVCAP rating.
Document No. 001-43593 Rev. *G
7
Storage Capacitor (VCAP) Options for Cypress nvSRAM
Document History
Document Title: Storage Capacitor (VCAP) Options for Cypress nvSRAM – AN43593
Document Number: 001-43593
Revision
ECN
Orig. of
Change
Submission
Date
Description of Change
**
1836148
UNC
See ECN
New application note
*A
2829379
MEDU
12/16/09
Updated Storage Capacitors sections. Added options to the Recommended
Capacitors table
*B
3158192
MEDU
01/31/2011
Updated Table 1 and Table 2.
Added Table 3 and Table 4.
*C
3203457
MEDU
03/23/2011
Added VCAP in title, abstract and introduction to enable easier search by users.
Added more explanation in Value and ESR sections
*D
3542218
MEDU
03/05/2012
Explanatory notes added in appendix
Added VCAP = 19 µF to 120 µF in Table 1
Updated the list of recommended capacitors in Tables 2 to 4
Added Table 5 for Capacitor Options for VCAP = 22 µF typical
Added appendix for explaining the VCAP max spec and the effect of ESR on the
VCAP
Updated template
*E
3887876
ZSK
01/30/2013
Updated in new template.
*F
3933202
ZSK
03/14/2013
Updated Appendix A (Updated Effect of Series Resistor on VCAP Pin (Replaced
“600 mV drop” with “500 mV drop”)).
*G
4598353
ZSK
12/16/2014
Update VCAP = 19.8 µF to 82 µF for 22 µF typical in Table 1
Added a note in the “Capacitor Selection Guide” section on VCAP ganging when
using more than one nvSRAM in a system
Removed the following capacitor options for VCAP from the “Recommended
Capacitor” table:
LKM325BJ107MM-T
LKM325ABJ107MM
C3216X5R1A107M
1216D476MAT2A
12066D476MAT2A
C3216X5R0J476M
C3216X5R1A476M
Added “Ganging of VCAP Pins” section in Appendix 1
www.cypress.com
Document No. 001-43593 Rev. *G
8
Storage Capacitor (VCAP) Options for Cypress nvSRAM
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© Cypress Semiconductor Corporation, 2007-2014. The information contained herein is subject to change without notice. Cypress Semiconductor
Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any
license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or
safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The
inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies
Cypress against all charges.
This Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide
patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a
personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative
works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source
Code except as specified above is prohibited without the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT
NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the
right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or
use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a
malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
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Document No. 001-43593 Rev. *G
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