AN43593 Storage Capacitor (VCAP) Options for Cypress nvSRAM Author: Harsha Medu Associated Project: No Associated Part Family: CY14xxxxx Software Version: None Related Application Notes: None AN43593 discusses the selection criteria for the storage capacitor (V CAP) options for Cypress nvSRAMs. This document also provides a sample list of a few suitable capacitors as guidance. Introduction AutoStore Operation The nvSRAM architecture uses a one-to-one pairing of a nonvolatile bit and a fast SRAM bit in each memory cell. During normal operation, the IC behaves exactly as a standard fast asynchronous SRAM and is easy to interface with the microprocessor or microcontroller. When IC power is disrupted or lost, the event is detected and all the SRAM bits are saved into the nonvolatile part (within 8 ms) using the stored energy in a small capacitor (V CAP). This operation is called AutoStore and is described in more detail in the next section. When power is restored, data is automatically recalled from the nonvolatile part to SRAM on power restore and this operation is called Power-Up RECALL (Hardware RECALL). This application note discusses the various options for selecting a suitable storage capacitor for using as V CAP. While we have listed a few capacitor part numbers in this application note as example, it should be noted that this list is only a sample list and does not include all parts from all vendors. Therefore we recommend you to refer to the various vendor catalogs when choosing a suitable capacitor. www.cypress.com Figure 1 shows the connection of the storage capacitor (VCAP) for AutoStore operation. Figure 1. AutoStore Mode Note pin and the pull-up resistor are applicable to parallel nvSRAMs only. During normal operation, the device draws current from VCC to charge a capacitor connected to the VCAP pin. This stored charge is used by the chip to perform a single STORE operation. If the voltage on the VCC pin drops below a minimum threshold (VSWITCH), the part automatically disconnects the VCAP pin from VCC and connects it to the internal circuits. A STORE operation is initiated with power provided by the VCAP capacitor. The following sections discuss the required characteristics for the VCAP capacitor. Document No. 001-43593 Rev. *G 1 Storage Capacitor (VCAP) Options for Cypress nvSRAM Voltage Rating Storage Capacitor Polymer aluminum electrolyte capacitors VCAP is charged to VCC through an internal charging circuit. Hence the VCAP should be rated above the maximum VCC of the part. Some of the newer nvSRAM parts, such as 16 Mbit nvSRAM are designed with an internal charge pump circuitry, which increases the VCAP pin voltage to 5 V, thereby allowing use of lower values of V CAP required for providing the necessary charge for AutoStore. In general, 6.3 V rated capacitors would satisfy the voltage ratings for VCAP for all VCC ranges of nvSRAM parts. Higher voltage ratings are recommended for better capacitor reliability, such as 6.3 V rated capacitors for 2.5 V and 3 V VCC parts, and 10 V rated capacitors for 5 V VCC parts. Multilayer ceramic capacitors (MLCC) ESR Types There are different types of capacitors, such as Niobium oxide, tantalum, electrolyte, film, multilayer ceramic capacitors, and polymer aluminum electrolytes. The following four types are selected considering reliability and stability of capacitors over temperature ranges. Niobium oxide capacitors Tantalum capacitors Note The above recommendation does not limit the types of capacitors that can be used as VCAP. Any type of capacitor that meets the VCAP spec range (value, DC voltage rating) can be used. You have to consider the application operating conditions while selecting the VCAP. Key Characteristics The following are capacitor key characteristics. These should be taken into consideration while deciding a suitable VCAP for the nvSRAM. Value (VCAP - % Tolerance) VCAP Minimum (VCAP + % Tolerance) VCAP Maximum Charging Current The storage capacitor (VCAP), which is charged to VCC, must deliver sufficient power required for an AutoStore operation. The time taken to charge must also be reasonably low - it must charge before Power Up RECALL is complete. These requirements decide the minimum and maximum value of the capacitor, respectively. The typical value suggested is the smallest value of VCAP (with 10% tolerance), which will be sufficient for AutoStore to be successful. The performance of the nvSRAM will be the same for any value within the specified range. Typical values for a few densities are given below. 4 Mbit parallel 68 µF ± 10% 8 Mbit parallel 150 µF ±10% 16 Mbit parallel 22 µF ± 10% 64 Kbit serial 47 µF ± 10% For minimum and maximum limits, refer to the device datasheet. See Max Limit for the VCAP. Tolerance Tolerance is an important factor to consider when choosing the capacitor. The capacitor value with worstcase tolerance should be within the VCAP minimum and maximum limits. www.cypress.com Effective series resistance (ESR) of the capacitor becomes significant when the capacitor operates under certain conditions, such as high frequency, high current, or temperature extremes. The storage capacitor, unlike coupling and decoupling capacitors, does not operate at high frequencies or current. Therefore, its ESR does not play a major role in the device operation. Though ESR value is not a constraint in capacitor selection, a low ESR of 1 Ω is preferred. The storage capacitor VCAP supplies the AutoStore current (ICC4 in the datasheet) during power down and having lower series resistor provides more operating margin. See Effect of Series Resistor on VCAP Pin. The VCAP is charged from the VCC through a charging circuit. Typically the peak charging current is about 70 mA. The peak charging current's orders of magnitude is less than the maximum surge currents, the capacitors are tested by the manufactures. The maximum charging currents in nvSRAM would not exceed 350 mA, across process, voltage, and temperature. Capacitor Selection Guide Table 1 summarizes the smallest value of VCAP, which can be used for the various capacitor ranges for the family of nvSRAMs. For instance, for a datasheet VCAP specification of 61 μF (min) to 180 μF (max), the typical is shown as 68 μF, since 68 μF ± 10% is the lowest capacitor value that can be used in the application. It should be noted that any capacitor within the min/max specification limits, namely, 68 μF, 100 μF, or 150 μF would perform the same way as long as the value of the capacitor (net of tolerance) is within the specification limit. If a system uses two or more nvSRAMs, their VCAP pins can be tied (ganged) together to connect to a single storage capacitor. The value of the storage capacitor must be the sum of the individual storage capacitor value required for the ganged nvSRAMs. See Ganging of VCAP Pins. Document No. 001-43593 Rev. *G 2 Storage Capacitor (VCAP) Options for Cypress nvSRAM Table 1. Capacitor Selection Guide [1] Capacitor Types Parameter Niobium Oxide Voltage rating for nvSRAM VCAP Tantalum Polymer Aluminum Electrolytic Capacitors Ceramic Multilayer Capacitors [2] 3 V part 6.3 V / 10 V[3] 6.3 V / 10 V[3] 6.3 V / 10 V[3] 6.3 V / 10 V[3] 5 V part 10 V / 16 V[3] 10 V / 16 V[3] 10 V / 16 V[3] 10 V / 16 V[3] ±20% ±10% ±20% ±20% ±20% 100 µF 68 µF 100 µF 100 µF 100 µF 220 µF 150 µF 220 µF 220 µF 2 x 100 µF[4] 68 µF 47 µF 68 µF 68 µF 100 µF 33 µF 22 µF 33 µF 33 µF 33 µF Tolerance For datasheet spec, VCAP = 61 µF to 180 µF (68 µF typical) For datasheet spec, VCAP = 122 µF to 360 µF Smallest nominal capacitor value (150 µF typical) For datasheet spec, VCAP = 42 µF to 180 µF (47 µF typical) For datasheet spec, VCAP = 19.8 µF to 82 µF (22 µF typical) Notes 1. Data collected from the manufacturer’s website and other related websites. 2. Ceramic capacitors have sensitivity to DC bias – capacitance reduces with DC bias voltage. Hence higher voltage rating or higher value capacitors should be chosen, taking into consideration the DC bias effect on the capacitance. Refer vendor’s technical document for DC bias characteristics. 3. Higher voltage rating capacitor can be used for better reliability. For example, a 68 µF / 10 V rated capacitor would provide higher reliability than a 68 µF / 6.3 V rated capacitor in any application. 4. The MLCC provides limited options in high capacitance range; therefore, to meet the high capacitance requirement, capacitors can be connected in parallel to achieve the desired capacitance. www.cypress.com Document No. 001-43593 Rev. *G 3 Storage Capacitor (VCAP) Options for Cypress nvSRAM Recommended Capacitors Table 2, Table 3, Table 4, and Table 5 provide details of a few capacitors that can be considered when selecting storage [5] capacitor (VCAP) for the nvSRAM. This list is not exhaustive and is provided for guidance only. You are recommended to refer to the various vendor catalogs when choosing the appropriate capacitors. Table 2. Capacitor Options for VCAP = 68 µF typical Manufacturer Manufacturer Part number Type Capacitance Voltage Rating Tolerance Footprint AVX Corporation TAJB686K006RNJ Tantalum 68 µF 6.3 V ±10% 3528-21(EIA) Kemet T491C686K006AT Tantalum 68 µF 6.3 V ±10% 3528-21(EIA) Vishay TR3C686K6R3C0200 Tantalum 68 µF 6.3 V ±10% 6032-28(EIA) Kemet T491C686K010AT Tantalum 68 µF 10 V ±10% 6032-28(EIA) Vishay TR3B686K010C0900 Tantalum 68 µF 10 V ±10% 3528-21(EIA) Vishay TR3C686K010C0225 Tantalum 68 µF 10 V ±10% 6032-28(EIA) Kemet T491C686K016AT Tantalum 68 µF 16 V ±10% 6032-28(EIA) AVX Corporation TAJC686K016RNJ Tantalum 68 µF 16 V ±10% 6032-28(EIA) Kemet T491C686K016AT Tantalum 68 µF 16 V ±10% 6032-28(EIA) AVX Corporation NOJB107M006RWJ Niobium Oxide 100 µF 6.3 V ±20% 3528-21(EIA) AVX Corporation NOJC107M006RWJ Niobium Oxide 100 µF 6.3 V ±20% 6032-28(EIA) AVX Corporation NOJD107M006RWJ Niobium Oxide 100 µF 6.3 V ±20% 7343-31(EIA) AVX Corporation NOJD107M010RWJ Niobium Oxide 100 µF 10 V ±20% 7343-31(EIA) Kemet T491B686M006AT Tantalum 100 µF 6.3 V ±20% 3528-21(EIA) Kemet T491C107M010AT Tantalum 100 µF 10 V ±20% 6032-28(EIA) AVX Corporation TPSB107M010R0400 Tantalum 100 µF 10 V ±20% 3528-21(EIA) AVX Corporation TPSC107M010R0100 Tantalum 100 µF 10 V ±20% 6032-28(EIA) Kemet A700D107M006ATE018 Polymer Aluminum Electrolyte 100 µF 6.3 V ±20% 7343-31(EIA) TDK Corporation CKG57NX5R1C107M MLCC 100 µF 16 V ±20% 6.50 mm x 5.50 mm x 5.50 mm AVX Corporation TAJC157K006RNJ Tantalum 150 µF 6.3 V ±10% 6032-28(EIA) AVX Corporation TAJC157K010RNJ Tantalum 150 µF 10 V ±10% 6032-28(EIA) Kemet B45197A3157K409 Tantalum 150 µF 16 V ±10% 7343-31(EIA) Note 5. Data collected from the manufacturer’s website and other related websites. www.cypress.com Document No. 001-43593 Rev. *G 4 Storage Capacitor (VCAP) Options for Cypress nvSRAM Table 3. Capacitor Options for VCAP = 150 µF typical Manufacturer Manufacturer Part number Type Capacitance Voltage Rating Tolerance Footprint AVX Corporation TAJC157K006RNJ Tantalum 150 µF 6.3 V ±10% 6032-28(EIA) AVX Corporation TAJC157K010RNJ Tantalum 150 µF 10 V ±10% 6032-28(EIA) Kemet B45197A3157K409 Tantalum 150 µF 16 V ±10% 7343-31(EIA) Panasonic - ECG EEFUE0J181R Polymer Aluminum Electrolyte 180 µF 6.3 V ±20% 7343-43(EIA) AVX Corporation NOSD227M006R0100 Niobium Oxide 220 µF 6.3 V ±20% 7343-31(EIA) Kemet B76006V2279M045 Tantalum 220 µF 6.3 V ±20% 7343-20(EIA) Kemet B45196H2227M409 Tantalum 220 µF 10 V ±20% 7343-31(EIA) AVX Corporation TAJE227M016RNJ Tantalum 220 µF 16 V ±20% 7343-43(EIA) Kemet A700X227M006ATE015 Polymer Aluminum Electrolyte 220 µF 6.3 V ±20% 7343-43(EIA) Table 4. Capacitor Options for VCAP = 47 µF typical Manufacturer Manufacturer Part number AVX Corporation TAJB476K006RNJ Vishay TR3B476K6R3C0550 AVX Corporation TAJB686M006RNJ Vishay TR3B686M6R3C0650 AVX Corporation Type Capacitance Voltage Rating Tolerance Footprint Tantalum 47 µF 6.3 V ±10% 3528-21(EIA) Tantalum 68 µF 6.3 V ±20% 6032-28(EIA) NOJC686M006RWJ Niobium Oxide 68 µF 6.3 V ±20% 6032-28(EIA) AVX Corporation NOJC686M010RWJ Niobium Oxide 68 µF 10 V ±20% 6032-28(EIA) Vishay TR3B686M010C1500 Tantalum 68 µF 10 V ±20% 3528-21(EIA) Kemet A700V686M006ATE028 Polymer Aluminum Electrolyte 68 µF 6.3 V ±20% 7343-20(EIA) AVX Corporation 12106D107KAT2A MLCC 100 µF 6.3 V ±10% 3225-12 Murata GRM31CR60J107ME39 MLCC 100 µF 6.3 V ±20% 3216-16 Kemet C1210C107M9PAC MLCC 100 µF 6.3 V ±20% 3225-21 TDK Corporation C3225X5R0J107MT MLCC 100 µF 6.3 V ±20% 3225-25 MLCC 100 µF 6.3 V ±20% MLCC 100 µF 10 V ±20% Taiyo Yuden Taiyo Yuden www.cypress.com JMK325ABJ107MM JMK325BJ107MY LMK325ABJ107MM Document No. 001-43593 Rev. *G 3225-25 3225-20 3225-25 5 Storage Capacitor (VCAP) Options for Cypress nvSRAM Table 5. Capacitor Options for VCAP = 22 µF typical Manufacturer Manufacturer Part number Kemet T494C226K010AT Vishay TR3C226K010C0400 AVX Corporation Type Capacitance Voltage Rating Tolerance Footprint Tantalum 22 µF 10 V ±10% 6032-28(EIA) NOJC336M006RWJ Niobium Oxide 33 µF 6.3 V ±20% 6032-28(EIA) AVX Corporation NOJC336M010RWJ Niobium Oxide 33 µF 10 V ±20% 6032-28(EIA) Kemet T494C336M010AT Tantalum 33 µF 10 V ±20% 6032-28(EIA) Vishay TR3C336M010C0375 Kemet A700V336M006ATE028 Polymer Aluminum Electrolyte 33 µF 6.3 V ±20% 7343-20(EIA) Murata GRM31CR60J476ME19L MLCC 47 µF 6.3 V ±20% 3216 metric Murata GRM31CR61A476ME15L MLCC 47 µF 10 V ±20% 3216 metric Murata GRM32ER61A476ME20L MLCC 47 µF 10 V ±20% 3225 metric TDK Corporation C3225X5R1A476M MLCC 47 µF 10 V ±20% 3225-25 Kemet C1206C476M8PAC MLCC 47 µF 10 V ±20% 3225 metric Summary The Cypress nvSRAM is the most reliable nonvolatile SRAM solution and it requires a small external capacitor (VCAP) for its nonvolatile operation. This application note provides the electrical requirements of the capacitor and lists a few capacitor types and values. The list of capacitors is not exhaustive and is intended as a guideline for selection of VCAP. There is a wide range of options available other than the capacitors listed here. You can choose an appropriate VCAP capacitor depending on the desired size, cost, reliability, and other conditions, which the system is subject to. The nvSRAM device operation is independent of these characteristics. www.cypress.com About the Author Name: Harsha Medu Title: Applications Engineer Staff Contact: [email protected] Document No. 001-43593 Rev. *G 6 Storage Capacitor (VCAP) Options for Cypress nvSRAM Appendix A Max Limit for the VCAP While it is easy to understand the minimum limit for V CAP, the restriction on the maximum value can be difficult to comprehend. This restriction is because the nvSRAMs are specified to be ready for access in tHRECALL time (which is 20 ms in most parts). tHRECALL is the time nvSRAM takes to complete its boot-up sequence followed by the Power Up RECALL and be ready for access. This Power Up RECALL specification guarantees that the VCAP would charge to a sufficient voltage (and charge) to ensure that the part will complete a STORE operation, should the power fail immediately after the tHRECALL time from power up. If a capacitor of value exceeding the V CAP spec is used, it is possible that the VCAP would not have charged to sufficient voltage within the tHRECALL duration. In case customers prefer using larger value capacitor exceeding the max value, they should ensure that the nvSRAM first access after power-up is delayed longer than the tHRECALL spec to allow capacitor to be sufficiently charged. As a rule of thumb, for every 10% increase in value over the maximum specified VCAP, add an additional 1 x tHRECALL duration before beginning access to the nvSRAM. For example, if nvSRAM device is rated for V CAP = 180 µF and if you have decided to use 220 µF capacitor instead of 180 µF, which is 22% higher than max value, in this case nvSRAM first access should be after 3.2 x tHRECALL (tHRECALL + 2.2 x tHRECALL). Since VCAP (min) to VCAP (max) range is about 3x, exceeding the max V CAP spec is not considered necessary in any application. Effect of Series Resistor on VCAP Pin A series resistor reduces the voltage to the STORE circuit, which is powered by the VCAP voltage during AutoStore. For instance, in the 1 Mbit nvSRAM that has ICC4 = 5 mA, a 10 Ω series resistor would reduce the voltage from V CAP pin by 50 mV. This reduction could be significant for the following reason. The AutoStore operation starts below a threshold level (VSWITCH); let us assume it starts at 2.4 V. The charge stored in the capacitor supplies the 5 mA (ICC4) current required for the STORE operation. As the STORE operation progresses, the voltage on the VCAP pin would be decreasing. The STORE operation takes 8 ms (tSTORE) time. During this 8 ms, the voltage on the VCAP pin should not go below the minimum voltage required for proper STORE operation. If we assume the minimum voltage for proper circuit operation is 1.9 V, then the STORE operation should finish within the 500 mV drop (2.4 V minus 1.9 V) on the VCAP pin. In case we put a series resistor on the VCAP pin, then because of the drop at VCAP pin due to series resistor it would mean that AutoStore circuit starts at a lower voltage and the circuit has power for a shorter time. In this example, the 500 mV operating range is reduced by the www.cypress.com 50 mV to 450 mV due to drop in the 10 Ω resistor. A 1 Ω resistor affects the available voltage range by only 5 mV. Note that these levels vary across process, voltage, and temperature (PVT) conditions and are not datasheet specs. The illustrative values are shown only to help understand the device operation better. Ganging of VCAP Pins nvSRAM allows ganging of its storage capacitor (VCAP) pin when using more than one nvSRAM in a system. The individual VCAP pin of two or more nvSRAMs can be tied (ganged) together to connect to a single storage capacitor, rather than using individual storage capacitors for the VCAP pin of each nvSRAM. This ganging scheme saves the board space and the bill of materials (BOM) cost. When ganging nvSRAM VCAP pins, the minimum and maximum size of the storage capacitor for the ganged VCAP pins is determined by adding the respective minimum and the maximum rated VCAP size of the individual nvSRAM. For example, if a system uses two 4 Mbit nvSRAMs with their rated VCAP minimum and maximum size as 61 µF and 180 µF respectively, then the minimum and the maximum size of the storage capacitor for the ganged two VCAP pins should be within 2 x 61 µF (122 µF) and 2 x 180 µF (360 µF). Similarly, if a system uses N numbers of 4 Mbit nvSRAMs, then the minimum and maximum size of the storage capacitor for the ganged N VCAP pins should be within N x 61 µF and N x180 µF. Ganging of nvSRAM VCAP pins is not allowed in the following cases: 1. If the system uses more than one nvSRAM device and each is connected to different VCC power supplies. In such cases, VCAP ganging is not allowed, because each nvSRAM will try to charge the storage capacitor to different voltage levels according their maximum VVCAP rating, resulting in a conflict in capacitor charging. 2. If two or more nvSRAMs are connected to the same VCC power supply but have different VVCAP (maximum voltage driven on the VCAP pin by the device) specifications, then the VCAP ganging is not allowed. New-generation nvSRAM devices such as CY14x116x have been designed with an on-chip voltage-doubler circuit to reduce the storage capacitor size on the VCAP pin and have the VCAP pin charging to 5 V max while the CY14x104x devices charge to VCC max. Therefore, for CY14B116L and CY14B104LA devices, do not tie VCAP pins together even when both the parts are connected to the same 3 V power supply. As a rule of thumb, ganging of more than one nvSRAM is allowed only when the ganged nvSRAM VCC is connected to the same power supply and each nvSRAM has the same VVCAP rating. Document No. 001-43593 Rev. *G 7 Storage Capacitor (VCAP) Options for Cypress nvSRAM Document History Document Title: Storage Capacitor (VCAP) Options for Cypress nvSRAM – AN43593 Document Number: 001-43593 Revision ECN Orig. of Change Submission Date Description of Change ** 1836148 UNC See ECN New application note *A 2829379 MEDU 12/16/09 Updated Storage Capacitors sections. Added options to the Recommended Capacitors table *B 3158192 MEDU 01/31/2011 Updated Table 1 and Table 2. Added Table 3 and Table 4. *C 3203457 MEDU 03/23/2011 Added VCAP in title, abstract and introduction to enable easier search by users. Added more explanation in Value and ESR sections *D 3542218 MEDU 03/05/2012 Explanatory notes added in appendix Added VCAP = 19 µF to 120 µF in Table 1 Updated the list of recommended capacitors in Tables 2 to 4 Added Table 5 for Capacitor Options for VCAP = 22 µF typical Added appendix for explaining the VCAP max spec and the effect of ESR on the VCAP Updated template *E 3887876 ZSK 01/30/2013 Updated in new template. *F 3933202 ZSK 03/14/2013 Updated Appendix A (Updated Effect of Series Resistor on VCAP Pin (Replaced “600 mV drop” with “500 mV drop”)). *G 4598353 ZSK 12/16/2014 Update VCAP = 19.8 µF to 82 µF for 22 µF typical in Table 1 Added a note in the “Capacitor Selection Guide” section on VCAP ganging when using more than one nvSRAM in a system Removed the following capacitor options for VCAP from the “Recommended Capacitor” table: LKM325BJ107MM-T LKM325ABJ107MM C3216X5R1A107M 1216D476MAT2A 12066D476MAT2A C3216X5R0J476M C3216X5R1A476M Added “Ganging of VCAP Pins” section in Appendix 1 www.cypress.com Document No. 001-43593 Rev. *G 8 Storage Capacitor (VCAP) Options for Cypress nvSRAM Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. 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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. www.cypress.com Document No. 001-43593 Rev. *G 9