FMMTA63 FMMTA64 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 2 MARCH 1995 ✪ PARTMARKING DETAIL FMMTA63 - Z2U FMMTA64 - Z2V E C COMPLEMENTARY TYPES FMMTA63 - FMMTA13 FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -800 mA Continuous Collector Current IC -500 mA Peak Base Current IBM -200 mA 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL FMMTA63 Collector-Base Breakdown Voltage V(BR)CBO -30 UNIT CONDITIONS. -30 V IC=-10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -30 -30 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -10 -10 V IE=-10µA, IC=0 Collector Cut-Off Current ICBO -0.1 -0.1 µA VCB=-30V, IE=0 Emitter Cut-Off Current IEBO -0.1 -0.1 µA VCE=-10V MIN. Static Forward hFE Current Transfer Ratio MAX. 5K 10K FMMTA64 MIN. MAX. 10K 20K IC=-10mA, VCE=5V* IC=-100mA, VCE=5V* Collector-Emitter Saturation Voltage VCE(sat) -1.5 -1.5 V IC=-100mA, IB=-0.1mA* Base-Emitter Saturation Voltage VBE(sat) -2.0 -2.0 V IC=-100mA, IB=-0.1mA* Transition Frequency fT MHz IC=-50mA, VCE=-5V f=20MHz 125 125 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FZTA63 datasheet. 3 - 178