AN311 FM25V01 Replaces Two FM25CL64s.pdf

AN311
FM25V01 Replaces Two FM25CL64s
Author: Harsha Medu
Associated Project: No
Associated Part Family: FM25V01, FM25CL64
Software Version: None
Related Application Notes: None
AN311 discusses the key differences which need to be considered when migrating from FM25CL64 to FM25V01.
Description
The FM25V01, a 128-Kbit SPI F-RAM, is a potential
replacement for two FM25CL64 (64-Kbit) devices;
FM25CL64 is now obsolete. For most designs, the
FM25V01 device can be considered a superset of the
FM25CL64. The two devices are identical in terms of
pinout, package dimensions, and read/write functionality.
This application note discusses the key differences
between the two devices, apart from density, which need
to be considered when migrating from FM25CL64 to
FM25V01.
Backward Compatible
From a software point of view, the two devices are
compatible. Aside from the additional address bit to
access twice the memory, the two devices are read / write
compatible. Both devices use the same two-byte address.
Remember that the 128-Kbit device address wraps at
0x3FFF while the 64-Kbit wraps at 0x1FFF. The block
protect boundaries are spaced at twice the address,
compared to the 64-Kbit device. For systems that use a
single FM25CL64 device, the transition to the FM25V01
could be as straightforward as changing your firmware to
hold the address bit A13 LOW during SRAM read/writes.
For systems that use two FM25CL64s, firmware needs to
be modified to use the address bit A13 to access the full
128-Kbit memory.
From a hardware point of view, the key difference between
the two devices is the higher standby current. Additionally
FM25V01 operates down to 2.0 V, extends the speed up
to 40 MHz and adds Device ID, Sleep Mode features. It
also adds power-up, power-down ramp rate and first
access time (after power-up) specifications. A memory
write operation is given in Figure 1 for FM25V01. Note the
addition of address bit A13 in the serial address stream.
This is the MSB bit for the 128-Kbit devices. A
compatibility chart for the two devices is given in Table 1.
A detailed comparison is shown in Table 2.
Table 1. Compatibility Chart
FM25CL64 Feature or Spec
Is FM25V01
compatible?
Package
Yes
Pinout
Yes
Temperature Range
Yes
Operating Voltage
Yes
Operating Current
Yes
Standby Current
No
Read / Write Function
Yes
Timing / Frequency
Yes
Data Retention
Endurance
Refer to Table 2
Yes
Figure 1. FM25V01 Write Cycle (WREN not shown)
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Document No. 001-86834 Rev. *A
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FM25V01 Replaces Two FM25CL64s
Table 2. Detailed Comparison
FM25CL64
FM25V01
Comments
-G, -DG
-G
Same “green” SOIC package. FM25V01 is not
offered in “green” TDFN package.
SOIC-8, TDFN-8
SOIC-8
Same outline and board footprint for SOIC.
FM25V01 is not offered in “green” TDFN package.
-
-
Same
–40 ºC to +85 ºC
–40 ºC to +85 ºC
Same
2.7 V to 3.65 V
2.0 V to 3.6 V
Package Types
Package Outlines
Pinout
Temperature Range
Operating Voltage Range
350 µA @ 1 MHz
220 µA @ 1 MHz
7 mA @ 20 MHz
2.5 mA @ 40 MHz
1 µA
150 µA
Sleep Mode Current
-
8 µA
Read / Write Function
-
-
20 MHz
40 MHz
Active Supply Current
Standby Current
Clock Frequency
Data Retention
45 years (+85 ºC)
FM25V01 allows operation down to 2.0 V
FM25V01 offers lower active current
FM25V01 has higher standby current
FM25V01 offers a sleep mode which can be used
to reduce the standby/idle current. During wake-up
from sleep mode, the device needs a recovery
time of 400 µs.
Same 2-byte addressing, same op-codes
FM25V01 supports higher speed
10 years (+85 ºC)
38 years (+75 ºC)
Unlimited
1E+14
FM25V01’s endurance is large enough to be
considered as unlimited for all practical
applications. For a 64-byte loop, at 40 MHz, the
FM25V01’s endurance is 43 years.
VDD Power-Up Ramp Rate (tVR)
-
50 µs / V
Power-up ramp rate should be slower than
50 µs / V for FM25V01
VDD Power-Down Ramp Rate (tVF)
-
100 µs / V
Power-down ramp rate should be slower than
100 µs / V for FM25V01
Power-Up to First Access (tPU)
-
250 µs
After power-up, the first access of FM25V01
should be after 250 µs
Endurance
Critical Considerations
All the parameter differences in Table 2 should be considered during the migration to FM25V01. The critical differences are
discussed in this section. System designers are also recommended to review the detailed datasheets when migrating to the
new part.
Read / Write Function
The FM25V01 device has an extra address bit, A13, to support the additional 64-Kbit memory when compared to the
FM25CL64. Setting A13 to a 0 level will address the 64-Kbits of your current FM25CL64 application. Setting A13 to a 1 level
will address the additional 64-Kbits of the FM25V01. Note that roll over will not happen at 0x1FFF in FM25V01; instead it will
roll over at 0x3FFF.
Standby Current / Sleep Mode Current
The FM25V01 has higher standby current of 150 µA compared to 1 µA of FM25CL64. But FM25V01 offers an additional sleep
mode feature which can be used to reduce the standby/idle current. The sleep mode current is 8 µA. Note that during wake-up
from sleep mode, the device needs a recovery time of 400 µs.
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FM25V01 Replaces Two FM25CL64s
VDD Ramp Rate
VDD power-up and power-down ramp rate specifications are added in FM25V01 device. Ensure that the power-up ramp rate is
slower than 50 µs / V and power-down ramp rate is slower than 100 µs / V in your system.
Power-Up to First Access
Power-up to first access specification is added in FM25V01 device. Ensure that the FM25V01 device is accessed only after
250 µs from power-up.
Conclusion
AN311 discusses the differences between FM25V01 and FM25CL64 which need to be considered during migration.
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Document No. 001-86834 Rev. *A
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FM25V01 Replaces Two FM25CL64s
Document History
Document Title: FM25V01 Replaces Two FM25CL64s - AN311
Document Number: 001-86834
Revision
ECN
Orig. of
Change
Submission
Date
Description of Change
**
3944550
GVCH
03/26/2013
New Spec.
*A
4281267
MEDU
03/07/2014
Updated to Cypress Template.
Added Compatibility Table and Detailed Comparison Table.
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Document No. 001-86834 Rev. *A
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FM25V01 Replaces Two FM25CL64s
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