AN55663 Migrating from CY14E256L/STK14C88 to CY14E256LA.pdf

AN55663
Migrating from CY14E256L/STK14C88 to CY14E256LA
Author: Ravi Prakash
Associated Project: No
Associated Part Family: CY14E256L/STK14C88
CY14E256LA
Software Version: None
Related Application Notes: None
AN55663 provides details for migrating from the CY14E256L/STK14C88 nvSRAM parts to CY14E256LA part in
applications. This application note also lists the parameter differences between the parts and the design considerations
for migration when converting applications to CY14E256LA.
Introduction
Feature Set
Cypress CY14E256LA is a 5 V, 256 Kbit (32 K x 8) nvSRAM
in 0.13 micron technology. This part with a few performance
enhancements
is
functionally
equivalent
to
CY14E256L/STK14C88 in 0.8 micron technology but with a
few differences in parameters. This application note
highlights
the
differences
between
the
CY14E256L/STK14C88 and the CY14E256LA and the
parameters that must be considered while migrating.
Note STK14C88 is the Simtek part number for CY14E256L.
Overview
AutoStore Enable/Disable
Preventing STORE on the fly
Speed
STORE Cycles
Data Retention
CY14E256L/
STK14C88
Not Available
Available
25 ns
35 ns
45 ns
1,000,000
100 years at
55 °C
CY14E256LA
Available
Not Available
25 ns
45 ns
1,000,000
20 years at
85 °C
Operating Temperature Range
The following tables compare the features and parameters
of the two parts. As shown in Table 1, the 256 Kbit nvSRAM
is available in x8 configuration.
While CY14E256L/STK14C88 is available in both
commercial
and
industrial
temperature
ranges,
CY14E256LA is offered only in the industrial temperature
range.
Table 1. Part Number Description
Table 3. Operating Temperature Range Comparison
Description
Original
Part Number
Replacement
Part Number
32 K x 8
CY14E256L/STK14C88
CY14E256LA
Operating Temperature
Range
Commercial (0 to 70 °C)
CY14E256L/
STK14C88
Available
Industrial (–40 to 85 °C)
Available
CY14E256LA
Not Available
Available
Feature Set
Both the parts share the same overall feature set and are
available in the operation speed bins given in Table 2.
Table 2. Feature Set Comparison
Feature Set
AutoStore
Software STORE
Hardware STORE
Software RECALL
AutoStore Inhibit
www.cypress.com
CY14E256L/
STK14C88
Available
Available
Available
Available
Available
CY14E256LA
Available
Available
Available
Available
Not Available
Packages
CY14E256LA is pin compatible with CY14E256L/STK14C88
and is available in the same packages and pin
configurations, and in additional packages.
Table 4. Packages Comparison
Package
32-pin SOIC
32-pin CDIP
44-pin TSOPII
Document No. 001-55663 Rev. *F
CY14E256L/
STK14C88
Available
Available
Not Available
CY14E256LA
Available
Not Available
Available
1
Migrating from CY14E256L/STK14C88 to CY14E256LA
Parameters
The CY14E256LA is a pin compatible replacement for CY14E256L/STK14C88 and will require minimum changes in the
application board in most applications. However, the differences in parameters should be considered before replacing one part
with the other. Table 5 lists the differences in parameters between CY14E256L/STK14C88 and CY14E256LA.
Table 5. Parameter Comparison
Parameter
Description
CY14E256L/
STK14C88
Speed
CY14E256LA
Min
Max
Min
Max
25 ns
-
100
-
70
35 ns
-
85
-
-
45 ns
-
70
-
52
-
-
3
-
10
Unit
DC Parameters
ICC1
ICC2
ICC3
ICC4
Average VCC Current
Average VCC Current
during STORE
Average VCC Current at
tRC = 200 ns, 5 V, 25 °C
Average VCAP Current
during AutoStore Cycle
mA
mA
-
10 (typ)
35 (typ)
-
-
2
25 ns
-
31
35 ns
-
26
-
8
mA
ISB1
Average VCC Standby Current (Standby,
Cycling Input)
45 ns
-
23
ISB
VCC Standby Current
-
-
1.5
-
8
mA
IIX
Input Leakage Current
-
–5
+5
–1
+1
uA
VIH
Input High Voltage
-
2.2
2
-
V
VOH
Output HIGH Voltage
-
-
-
(IOUT = –2 mA)
VOL
Output LOW Voltage
-
-
VCAP
Storage Capacitor
-
2.4
(IOUT = –4 mA)
0.4
(IOUT = 8 mA)
Not specified
-
54 to 260
mA
2.4
0.4
(IOUT = 4 mA)
61 to 180
V
V
µF
AC Switching Parameters
tDOE
Output Enable to Data Valid
25 ns
-
10
-
12
35 ns
-
15
-
-
45 ns
-
20
-
20
ns
tOHA
Output Hold After Address Change
-
5
-
3
-
ns
tLZCE
Chip Enable to Output Active
-
5
-
3
-
ns
tLZWE
Output Active After End of Write
-
5
-
3
-
ns
-
-
0.55
-
20
ms
-
-
10
-
8
ms
-
-
300
-
25
ns
AutoStore / Power-Up RECALL Parameters
tHRECALL
Power-Up RECALL Duration
tSTORE
STORE Cycle Duration
tVSBL
Low Voltage Trigger (VSWITCH) to
VRESET
Low Voltage Reset Level
-
-
3.6
VSWITCH
Low Voltage Trigger Level
-
4.0
4.5
-
4.4
V
tDELAY
Time Allowed to Complete SRAM Write
Cycle
-
1,000
-
-
25
ns
www.cypress.com
low
Document No. 001-55663 Rev. *F
Not Applicable
V
2
Migrating from CY14E256L/STK14C88 to CY14E256LA
Parameter
Description
CY14E256L/
STK14C88
Speed
Min
CY14E256LA
Unit
Max
Min
Max
VHDIS
Output Disable Voltage
-
Not specified
-
1.9
V
tLZHSB
To Output Active Time
-
Not specified
-
5
µs
tHHHD
High Active Time
-
Not specified
-
500
ns
Software Controlled STORE/RECALL cycle Parameters
tHA
Address Hold Time
-
20
-
0
-
ns
tRECALL
RECALL Duration
-
-
20
-
200
µs
-
-
300
-
25 (tDELAY)
ns
-
25
ns
Hardware STORE cycle Parameters
tHLBL
LOW to STORE Busy
To Output Active Time when write
latch not set
tDHSB
-
Not specified
Critical Considerations
The impact of the differences in CY14E256LA with respect
to the CY14E256/STK14C88 in existing applications are
discussed in this section. System designers are
recommended to review the detailed datasheets when
migrating to the new part.
DC Parameters
ICC1 (Average current at full speed) is lower in CY14E256LA
and hence power supply design in applications with
CY14E256L/STK14C88 would require no changes when
replacing the nvSRAM with the CY14E256LA in spite of the
higher values in the lower speed / higher standby current.
The critical parameter to consider is the VCAP.
VCAP
While most of the differences do not impact the application,
the difference in VCAP is a critical consideration while
converting from the older rev parts. VCAP is the capacitor that
provides the required charge for AutoStore to complete NV
store of the SRAM data during power down. The required
capacitor range is different for the two parts.
Table 6. VCAP Comparison
Description
CY14E256L/
STK14C88
CY14E256LA
VCAP
54 µF to 260 µF
61 µF to 180 µF
AC Switching Parameters
There are a few minor differences in switching parameters
between the CY14E256LA and the CY14E256L/STK14C88
as listed in the Table 5 on page 2. However, these
differences do not impact most applications. For replacing
35 ns speed parts, choose the 25 ns speed parts as
replacement (since 35 ns speed grade is not available in the
CY14E256LA).
AutoStore / Power-Up RECALL Parameters
tHRECALL
The power-up RECALL is much different in the
CY14E256LA compared to the CY14E256L/STK14C88
because of architecture differences.
Table 7. tHRECALL Comparison
Description
CY14E256L/
STK14C88
CY14E256LA
tHRECALL
550 µs
20 ms
This difference is not likely to affect applications since the
initialization of the controller on the board happens at the
same time. However, this should be taken into consideration
when
replacing
the
CY14E256L/STK14C88
with
CY14E256LA.
Therefore, any existing application which uses a capacitor
value outside the overlapping range (61 µF to 180 µF) the
impact of capacitor dimensions needs to be considered
while changing to the new capacitor.
Note The capacitor range is the absolute value of the
capacitor, net of tolerence.
www.cypress.com
Document No. 001-55663 Rev. *F
3
Migrating from CY14E256L/STK14C88 to CY14E256LA
Software Controlled STORE/RECALL Cycle Parameters
Hardware STORE cycle Parameters
The Software cycle parameter tRECALL is different in
CY14E256LA as described below. The software address
sequences are identical to that in the CY14E256L/
STK14C88 parts.
The Hardware STORE parameters are improved in the
CY14E256LA. The improvements are listed under the
Details of Improvement section. No changes will be required
in applications.
tRECALL
AutoStore Inhibit
Software RECALL time (tRECALL) is higher in CY14E256LA.
The CY14E256L/STK14C88 has the AutoStore Inhibit
feature and the CY14E256LA has AutoStore Disable mode.
These two provide the same result of AutoStore disable but
are done by different means – hardware in CY14E256L/
STK14C88 and software in CY14E256LA.
Table 8. tRECALL Comparison
Description
CY14E256L/
STK14C88
CY14E256LA
tRECALL
20 µs
200 µs
This difference could require firmware change in the existing
application to increase the controller wait state when
software RECALL is initiated.
Software Sequence
The CY14E256LA has been designed to be compatible with
the CY14E256L/STK14C88 in the software sequence
modes. Hence, the same Software STORE and RECALL
address sequences in CY14E256L/STK14C88 works in
CY14E256LA, requiring no firmware change. However,
there is a difference in the required state of
/
during
the software sequence reads as explained further.
In the CY14E256L/STK14C88 while software sequence
must be clocked with
/
controlled reads it is not
necessary that
/ be low for the sequence to be valid.
That is, it is not necessary that the read is a real read with
/
held LOW. But, in the CY14E256LA the software
sequence may be clocked with
controlled reads or
controlled reads. This means that while in the
CY14E256L/STK14C88 parts
/
state was immaterial,
in the CY14E256LA parts,
needs to be LOW for a valid
software sequence read. It does not matter if
goes LOW
first or
goes LOW first but the read is valid for software
sequence only when both
and
have gone LOW. In
both the CY14E256L/STK14C88 and the CY14E256LA
parts
must be kept HIGH for all the six read sequences.
To disable AutoStore in CY14E256L/STK14C88, the power
is to be connected to the VCAP pin and the VCC pin is
grounded (or left open). This cannot be done in
CY14E256LA. For proper operation of the device, in
CY14E256LA, power is to be connected to the VCC pin only.
However, AutoStore disable is more easily done through the
software sequence. Therefore, if the CY14E256L/
STK14C88 is to be replaced in an application where
AutoStore has been disabled, then the layout has to be
modified to connect the power to the VCC pin and a software
sequence has to be used to disable AutoStore function
followed by a Software STORE, the first time the board is
powered up.
Preventing STORE
In the CY14E256L/STK14C88, STORE function can be
disabled on the fly by holding
pin HIGH at the onset of
STORE with a driver capable of sourcing 30 mA at a VOH of
at least 2.2 V. This feature is not available in the 0.13 µ
parts. In the CY14E256LA, a STORE initiated by any
means, cannot be disabled on the fly.
Data Retention
The Data Retention in CY14E256LA part is improved from
the older technology part. The CY14E256LA has data
retention of 20 years at 85 °C against the CY14E256L/
STK14C88 data retention of 100 years at 55 °C. This would
translate to over four times improvement in data retention at
the same temperatures.
In effect, this difference will affect applications where
software sequence reads are done with
/ held HIGH.
Firmware change will be required to take
LOW when
using the new part CY14E256LA. Applications where
software sequence reads are performed with
/
LOW
do not require any change.
www.cypress.com
Document No. 001-55663 Rev. *F
4
Migrating from CY14E256L/STK14C88 to CY14E256LA
Details of Improvement
Hardware STORE Related Improvements
pin (Hardware STORE Busy Indication/Hardware
STORE Initiation)
The
pin of the nvSRAM is an open drain I/O pin
(internal 100 KΩ weak pull-up resistor) used to indicate or
initiate a STORE operation. When a STORE operation is in
progress, nvSRAM pulls the
pin low to indicate that the
device is busy and cannot be accessed for read/write
operation. During normal operation, the
pin can be
pulled low to initiate a Hardware STORE operation.
As shown in Table 5 on page 2, several timing parameters
related to the
pin input and output have changed from
CY14E256L/STK14C88 to CY14E256LA. All of these
changes are improvements from the original part
specification and should be considered as added benefits in
your system while migrating to the new part number.
TDELAY
If a write latch is set and the
pin is pulled low,
CY14E256L/STK14C88 enables 1 µs time for write
operations to complete before STORE operation begins and
reads and writes are inhibited. This potentially enables
inadvertent data to be written to the nvSRAM during the
tDELAY duration.
Note rite Latch: hen a write operation is done, a ‘write
latch’ is set internally. hen
is pulled low, nvSRAM
checks this write latch before initiating a STORE. This is
done to prevent any unnecessary loss of endurance cycles.
In CY14E256LA, the tDELAY parameter enables only one
write cycle time for any ongoing write to complete after
pin is pulled low. This improvement provides better security
from inadvertent write operations.
Also, if
pin is pulled low externally for a minimum of
tPHSB time on CY14E256LA, the output driver of
pin
pulls the pin low only indicating a STORE operation within
25 ns (tDELAY). This parameter for
low to STORE busy
is not specified in the CY14E256L/STK14C88. (See Figure 1
and Figure 2)
LOW when write latch not set:
If no writes are performed since the last STORE/RECALL
operation, STORE operation does not start when
is
pulled low. However, the
pin is still internally pulled low
for 1 µs (tDELAY) time in the CY14E256L/ STK14C88 device.
CY14E256LA device does not pull the
pin low
internally if write latch is not set. This improvement prevents
the possibility of being in an infinite loop when
pins of
two nvSRAM devices are ganged.
Figure 1. CY14E256L/STK14C88: AC Parameters Related to
Figure 2. CY14E256LA: AC Parameters Related to
Write Latch Set
www.cypress.com
Write Latch not Set
Document No. 001-55663 Rev. *F
5
Migrating from CY14E256L/STK14C88 to CY14E256LA
Power-up Recall Related Improvements
Additional parameters are specified in CY14E256LA such as
Output Disable Voltage (VHDIS),
To Output Active Time
(tLZHSB), and
High Active Time (tHHHD), which helps in system design. See Figure 3 and Figure 4 for the definition of the
additional specs in power-up. Also, note that
remains low until the end of the power-up in the new part. This would guard
against the system inadvertently thinking the part has completed the boot up prior to real completion.
Figure 3. CY14E256L/STK14C88: Power-Up Recall
Figure 4. CY14E256LA: Power-Up Recall
www.cypress.com
Document No. 001-55663 Rev. *F
6
Migrating from CY14E256L/STK14C88 to CY14E256LA
Summary
The application note discusses the differences between
CY14E256LA in the latest 0.13 micron technology and
CY14E256L/STK14C88 in the 0.8 micron technology.
Several parameters related to
and power-up have
improved / specified in the new device enabling faster device
response, greater data security, and ease of design.
www.cypress.com
CY14E256LA is pin compatible with and can replace the
CY14E256L/STK14C88 device with minimum changes
hardware/firmware in most applications. Applications where
CY14E256L/STK14C88 is in AutoStore inhibit mode would
require layout changes, and also, it is not possible to prevent
STORE on the fly in the CY14E256LA. The value of VCAP in
the existing design needs to be considered while replacing
the part.
Document No. 001-55663 Rev. *F
7
Migrating from CY14E256L/STK14C88 to CY14E256LA
Document History
Document Title: Migrating from CY14E256L/STK14C88 to CY14E256LA – AN55663
Document Number: 001-55663
Revision
ECN
Orig. of
Change
Submission
Date
Description of Change
**
2773126
PSR
10/01/09
New Spec.
*A
3016464
PSR
09/27/10
Updated Introduction in page 1.
Added a feature, Preventing STORE on the fly, to Table 2 in page 1 and added a
paragraph under Critical Consideration in page 5 indicating this feature difference.
Changed STORE cycles of CY14E256LA in Table 2 in page 1 to 1,000,000 and
deleted the STORE cycles paragraph under Critical Consideration since the parts
are identical in this.
Changed ICC4 and ISB of CY14E256LA in Table 5 in page 2 to 8mA to align with
datasheet spec.
Updated Summary in page 7.
*B
3223418
PSR
04/12/11
Added
*C
3618997
PSR
06/05/12
Updated document to match with current Cypress template.
hanged title from “ onverting” to “Migrating”.
Reworded the Abstract for better understanding.
Text updates for more clarity. No change in technical content.
*D
3918276
PSR
03/01/2013
Updated Table 5 under Parameters (Changed unit of tDOE parameter from mA to
ns).
*E
4168635
GVCH
10/21/2013
Obsolete document.
*F
4221998
GVCH
12/19/2013
Document reactivated.
Updated in new template.
www.cypress.com
requirement differences in Software Sequence section in page 3, 4
Document No. 001-55663 Rev. *F
8
Migrating from CY14E256L/STK14C88 to CY14E256LA
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Document No. 001-55663 Rev. *F
9