AN55661 Migrating from CY14B256L/STK14D88 to CY14B256LA.pdf

AN55661
Migrating from CY14B256L/STK14D88 to CY14B256LA
Author: Ravi Prakash
Associated Project: No
Associated Part Family: CY14B256L/STK14D88, CY14B256LA
Related Application Notes: None
AN55661 provides details for migrating from the CY14B256L/STK14D88 nvSRAM parts to CY14B256LA part in
applications. This application note also lists the parameter differences between the parts and the design considerations
for migration when converting applications to CY14B256LA.
Introduction
Cypress CY14B256LA is a 3 V, 256 Kbit (32 K x 8),
nvSRAM in 0.13 micron technology. This part with a few
performance enhancements is functionally equivalent to
CY14B256L/STK14D88 in 0.25 micron technology but with
a few differences in parameters. This application note
highlights
the
differences
between
the
CY14B256L/STK14D88 and the CY14B256LA and the
parameters that must be considered while migrating.
Note: STK14D88
CY14B256L.
is
the
Simtek
part
number
Feature Set
CY14B256L/
STK14D88
CY14B256LA
Software RECALL
Available
Available
25 ns
25 ns
35 ns
45 ns
45 ns
STORE Cycles
200,000
1,000,000
Data Retention
20 years at 55 °C
20 years at 85 °C
Speed
for
Operating Temperature Range
Overview
The following tables compare the features and parameters
of the two parts. As shown in Table 1, the 256 Kbit
nvSRAM is available in x8 configuration.
While CY14B256L/STK14D88 is available in both
commercial
and
industrial
temperature
ranges,
CY14B256LA is offered only in the industrial temperature
range.
Table 3. Operating Temperature Range Comparison
Table 1. Part Number Description
Description
Original
Part Number
Replacement
Part Number
32 K x 8
CY14B256L/STK14D88
CY14B256LA
Operating Temperature
Range
CY14B256L/
STK14D88
CY14B256LA
Commercial (0 to 70 °C)
Available
Not Available
Industrial (–40 to 85 °C)
Available
Available
Feature Set
Packages
Both the parts share the same overall feature set and are
available in the operation speed bins as given in Table 2.
CY14B256LA is pin compatible with CY14B256L/
STK14D88 and is available in the same packages and pin
configurations, and in additional packages.
Table 2. Feature Set Comparison
Table 4. Packages Comparison
CY14B256L/
STK14D88
CY14B256LA
AutoStore
Available
Available
Software STORE
Available
Available
Hardware STORE
Available
Available
AutoStore Enable/
Disable
Available
Available
Feature Set
CY14B256L/
STK14D88
CY14B256LA
32-pin SOIC
Available
Available
48-pin SSOP
Available
Available
44-pin TSOPII
Not Available
Available
Package
www.cypress.com
Document No. 001-55661 Rev. *D
1
Migrating from CY14B256L/STK14D88 to CY14B256LA
Parameters
The CY14B256LA is a pin compatible replacement for CY14B256L/STK14D88 and requires minimum changes in the
application board in most applications. However, the differences in parameters should be considered before replacing one part
with the other. Table 5 lists the differences in parameters between CY14B256L/STK14D88 and CY14B256LA.
Table 5. Parameter Comparison
Parameter
Description
CY14B256L/
STK14D88
Speed
CY14B256LA
Unit
Min
Max
Min
Max
25 ns
-
70
-
70
35 ns
-
60
-
-
45 ns
-
55
-
52
-
-
3
-
10
DC Parameters
ICC1
ICC2
ICC3
ICC4
Average VCC Current
Average VCC Current
during STORE
mA
mA
Average VCC Current at
tRC = 200 ns, 3 V, 25 °C
-
Average VCAP Current
during AutoStore Cycle
10 (typ)
35 (typ)
-
-
3
-
5
mA
-
3
-
5
mA
ISB
VCC Standby Current
-
VCAP
Storage Capacitor
-
17 to 120
61 to 180
µF
AC Switching Parameters
Read and Write cycle parameters are identical
AutoStore / Power-Up RECALL Parameters
tSTORE
STORE Cycle Duration
-
-
12.5
-
8
ms
tDELAY
Time Allowed to Complete SRAM Write Cycle
-
1,000
70,000
-
25
ns
VHDIS
������
HSB Output Disable Voltage
-
Not specified
-
1.9
V
-
Not specified
-
5
µs
������
HSB High Active Time
-
Not specified
-
500
ns
tHA
Address Hold Time
-
1
-
0
-
ns
tRECALL
RECALL Duration
-
-
120
-
200
µs
tSS
Soft Sequence Processing Time
-
-
70
-
100
µs
tLZHSB
tHHHD
������
HSB To Output Active Time
Software Controlled STORE/RECALL Cycle Parameters
Hardware STORE Cycle Parameters
tDHSB
������
HSB LOW to STORE Busy
������
HSB To Output Active Time when write latch
not set
www.cypress.com
-
Not specified
-
25 (tDELAY)
ns
-
Not specified
-
25
ns
Document No. 001-55661 Rev. *D
2
Migrating from CY14B256L/STK14D88 to CY14B256LA
Critical Considerations
The impact of the differences in CY14B256LA with respect
to the CY14B256L/STK14D88 in existing applications are
discussed in this section. System designers are
recommended to review the detailed datasheets when
migrating to the new part.
DC Parameters
ICC1 (Average current at full speed) is the same in
CY14B256LA and hence power supply design in
applications with CY14B256L/STK14D88 would require no
changes when replacing the nvSRAM with the CY14B256LA
in spite of the higher values in the lower speed / higher
standby current. The critical parameter to consider is the
VCAP.
VCAP
VCAP is the capacitor that provides the required charge for
AutoStore to complete NV store of the SRAM data during
power down. The required capacitor range is different for the
two parts.
Table 6. VCAP Comparison
Description
CY14B256L/
STK14D88
CY14B256LA
VCAP
17 µF to 120 µF
61 µF to 180 µF
Voltage Rating
6V
4V
Therefore, in any existing application which uses a capacitor
value outside the overlapping range (61 µF to 120 µF) the
impact of capacitor dimensions needs to be considered
while changing to the new capacitor. The capacitor voltage
rating requirement is lower in CY14B256LA as the VCAP
voltage is not boosted above the VCC voltage as done in the
CY14B256L/STK14D88.
Note The capacitor range is the absolute value of the
capacitor, net of tolerence.
Software Controlled STORE/RECALL Cycle
Parameters
The Software RECALL time (tRECALL) and Soft sequence
processing time (tSS) are higher in CY14B256LA as
described in Table 7.
Table 7. Software Controlled STORE/RECALL Cycle
Parameters Comparison
Description
CY14B256L/
STK14D88
CY14B256LA
tRECALL
120 µs
200 µs
tSS
70 µs
100 µs
This difference could require firmware change in the existing
application to increase the controller wait state when
software RECALL or AutoStore Enable/Disable cycles are
initiated.
Note: In the CY14B256L/STK14D88, reads/writes are only
inhibited after tSS and only for the STORE or RECALL
command. In the CY14B256LA, reads/writes are inhibited
after tDELAY and remain disabled until the end of the soft
command (tSS or tRECALL or tSTORE). This is an improvement
but applications where reads/writes are performed within the
tSS time after initiating a software sequence would require
firmware change to include the wait time.
Software Sequence
The CY14B256LA has been designed to be compatible with
the CY14B256L/STK14D88 in the software sequence
modes for STORE and RECALL. Hence, the same Software
STORE
and
RECALL
address
sequences
in
CY14B256L/STK14D88 works in CY14B256LA, requiring no
firmware change. Only in AutoStore Disable and Enable
software sequences, the 6th address in CY14B256LA is
different and needs to be changed as shown in Table 8.
Table 8. AutoStore Disable/Enable 6th Address Comparison
AC Switching Parameters
The AC parameters are identical between the CY14B256LA
and the CY14B256L/STK14D88 for identical speed grades.
For replacing 35 ns speed parts, choose the 25 ns speed
parts as replacement (since 35 ns speed grade is not
available in the CY14B256LA).
AutoStore / Power-Up RECALL Parameters
Addresses A15 – A0
th
6 Address
CY14B256L/
STK14D88
CY14B256LA
AutoStore Disable
0x03F8
0x0B45
AutoStore Enable
0x07F0
0x0B46
The AutoStore/Power-Up RECALL parameters are better in
the CY14B256LA compared to the CY14B256L/STK14D88
and hence applications would not require any changes
during migration. The improvements are listed under the
Details of Improvement section.
www.cypress.com
Document No. 001-55661 Rev. *D
3
Migrating from CY14B256L/STK14D88 to CY14B256LA
Hardware STORE Cycle Parameters
Data Retention
The Hardware STORE parameters are improved in the
CY14B256LA and hence applications would not require any
changes during migration. The improvements are listed
under the Details of Improvement section. No changes are
required in applications.
The Data Retention in CY14B256LA part is improved from
the older technology part. The CY14B256LA has data
retention of 20 years at 85 °C against the CY14B256L/
STK14D88 data retention of 20 years at 55 °C. This would
translate to over 20 times improvement in data retention at
the same temperatures.
STORE Cycles
The NV STORE cycles endurance in the CY14B256LA is
improved five times compared to the older technology giving
it one million STORE cycles against 200 K STORE cycles in
the older part.
Details of Improvement
HSB pin (Hardware STORE Busy Indication/Hardware
STORE Initiation)
In CY14B256LA, the tDELAY parameter enables only one
write cycle time for any ongoing write to complete after HSB
pin is pulled low. This improvement provides better security
from inadvertent write operations.
The HSB pin of the nvSRAM is an open drain I/O pin used
to indicate or initiate a STORE operation. When a STORE
operation is in progress, nvSRAM pulls the HSB pin low to
indicate that the device is busy and cannot be accessed for
read/write operation. During normal operation, the HSB pin
can be pulled low to initiate a Hardware STORE operation.
Also, if HSB pin is pulled low externally for a minimum of
tPHSB time on CY14B256LA, the output driver of HSB pin
pulls the pin low only indicating a STORE operation within
25 ns (tDELAY). This parameter for HSB low to STORE busy
is not specified in the CY14B256L/STK14D88. (See Figure 1
and Figure 2)
Hardware STORE Related Improvements
As shown in Table 5, several timing parameters related to
the HSB pin input and output have changed from
CY14B256L/STK14D88 to CY14B256LA. All of these
changes are improvements from the original part
specification and should be considered as added benefits in
your system while migrating to the new part number.
tDELAY
If a write latch is set and the HSB pin is pulled low,
CY14B256L/STK14D88 enables 1 µs to 70 µs time for write
operations to complete before STORE operation begins and
reads and writes are inhibited. This potentially enables
inadvertent data to be written to the nvSRAM during the
tDELAY duration.
HSB L O W W h e n W r i t e L a t c h N o t S e t
If no writes are performed since the last STORE/RECALL
operation, STORE operation does not start when HSB is
pulled low. However, the HSB pin is still internally pulled low
for 1 µs to 70 µs (tDELAY) time in the CY14B256L/ STK14D88
device.
CY14B256LA device does not pull the HSB pin low
internally if write latch is not set. This improvement prevents
the possibility of being in an infinite loop when HSB pins of
two nvSRAM devices are ganged.
Note Write Latch: When a write operation is done, a ‘write
latch’ is set internally. When HSB is pulled low, nvSRAM
checks this write latch before initiating a STORE. This is
done to prevent any unnecessary loss of endurance cycles.
www.cypress.com
Document No. 001-55661 Rev. *D
4
Migrating from CY14B256L/STK14D88 to CY14B256LA
Figure 1. CY14B256L/STK14D88: AC Parameters Related to HSB
Figure 2. CY14B256LA: AC Parameters Related to HSB
Write Latch Set
www.cypress.com
Write Latch Not Set
Document No. 001-55661 Rev. *D
5
Migrating from CY14B256L/STK14D88 to CY14B256LA
Power-Up Recall Related Improvements
Additional parameters are specified in CY14B256LA such as HSB Output Disable Voltage (VHDIS), HSB To Output Active Time
(tLZHSB) and HSB High Active Time (tHHHD) which helps in system design. See Figure 3 and Figure 4 for the definition of the
additional specs in power-up. Also, note that HSB remains low until the end of the power-up in the new part. This would guard
against the system inadvertently thinking the part has completed the boot up prior to real completion.
Figure 3. CY14B256L/STK14D88: Power-Up Recall
Figure 4. CY14B256LA: Power-Up Recall
www.cypress.com
Document No. 001-55661 Rev. *D
6
Migrating from CY14B256L/STK14D88 to CY14B256LA
Summary
The application note discusses the differences between
CY14B256LA in the latest 0.13 micron technology and
CY14B256L/STK14D88 in the 0.25 micron technology.
Several parameters related to HSB and power-up have
improved / specified in the new device enabling faster
device response, greater data security, and ease of design.
www.cypress.com
CY14B256LA is pin compatible with and can replace the
CY14B256L/STK14D88 device with minimum changes to
the hardware/firmware in most applications. Value of VCAP in
th
the existing design, the 6 address for software sequence
for AutoStore Enable/Disable and the controller wait state
during software RECALL and AutoStore Enable/Disable
cycles need to be considered while migrating.
Document No. 001-55661 Rev. *D
7
Migrating from CY14B256L/STK14D88 to CY14B256LA
Document History
Document Title: Migrating from CY14B256L/STK14D88 to CY14B256LA - AN55661
Document Number: 001-55661
Revision
ECN
Orig. of
Change
Submission
Date
Description of Change
**
2773089
PSR
10/01/2009
New Spec.
*A
3016464
PSR
09/01/2010
Changed STORE cycles of CY14B256LA in Table 2 to 1,000,000 and added a
paragraph under Critical Consideration indicating the improvement.
*B
3618997
PSR
06/06/2012
Updated document to match with current Cypress template.
Changed title from “Converting” to “Migrating”.
Reworded the Abstract for better understanding.
Text and drawing updates for more clarity. No change in technical content.
*C
4168519
GVCH
10/21/2013
Obsolete document.
*D
4221941
GVCH
12/16/2013
Document reactivated.
Updated in new template.
www.cypress.com
Document No. 001-55661 Rev. *D
8
Migrating from CY14B256L/STK14D88 to CY14B256LA
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Document No. 001-55661 Rev. *D
9