RB501V-40 Diodes Schottky barrier diode RB501V-40 !External dimensions (Units : mm) !Applications Low current rectification 2.5±0.2 4 0.1 0.1 + −0.05 0.3±0.05 1.25±0.1 !Construction Silicon epitaxial planar CATHODE MARK 1.7±0.1 2.5±0.2 !Features 1) Small surface mounting type. (UMD2) 2) Low VF. (VF=0.43V Typ. at 100mA) 3) High reliability. 1.7±0.1 CATHODE MARK 0.1 0.1 + −0.05 0.3±0.05 1.25±0.1 0.2 0.7 + −0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 4 0.2 0.7 + −0.1 ∗There are two different markings. !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Peak reverse voltage Parameter VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Peak forward surge current∗ Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗ 60 Hz for 1 !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Forward voltage Parameter VF1 − − 0.55 V IF=100mA Forward voltage VF2 − − 0.34 V IF=10mA Reverse current IR − − 30 µA VR=10V Capacitance between terminals CT − 6.0 − pF VR=10V, f=1MHz Note) ESD sensitive product handling required. Conditions RB501V-40 Diodes 1000 10m 1 0 0.1 0.2 REVERSE CURRENT : R (A) °C −25 10 25° C 100 12 5° C 75° C FORWARD CURRENT : IF (mA) 125°C 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics Io CURRENT (%) 100 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) 1m 75°C 100µ 10µ 25°C 1µ 0.1 0 10 20 30 40 REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 100 10 1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics