RB400D Diodes Shottky barrier diode RB400D zApplication Low current rectification zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) zFeatures 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 ＋0.1 2.9±0.2 各リードとも Each lead has same dimension 同寸法 －0.05 ＋0.1 ＋0.2 0.8MIN. 1.6－0.1 2.8±0.2 0.95 1.0MIN. 0.15－0.06 (3) 2.4 1.9 0～0.1 0.95 zStructure Silicon epitaxial planar (1) 0.8±0.1 0.95 SMD3 0.3～0.6 (2) zStructure 1.1±0.2 0.01 1.9±0.2 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code zTaping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 φ1.05MIN 4.0±0.1 3.2±0.1 3.2±0.1 8.0±0.2 5.5±0.2 0～0.5 3.2±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperatuer Storage temperature Limits 40 40 500 3 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A ℃ ℃ (*1) Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR1 IR2 Ct1 Min. - Typ. 125 Max. 0.55 30 50 - Unit V µA µA pF Ct2 - 20 - pF Conditions IF=500mA VR=10V VR=30V VR=0V , f=1MHz VR=10V , f=1MHz Rev.B 1/3 RB400D Diodes zElectrical characteristic curves (Ta=25°C) 10000 1000 Ta=25℃ 10 Ta=-25℃ 1 0.1 200 400 10 Ta=25℃ 1 Ta=-25℃ 0.1 500 490 480 AVE:495.8mV 8 7 6 5 4 3 AVE:0.510uA 2 160 150 140 130 120 100 23 22 21 20 19 18 17 10 5 5 4 3 AVE:1.117uA 2 1cyc Ifsm 25 8.3ms 20 15 10 5 AVE:5.30A IFSM DISRESION MAP Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 15 6 0 10 10 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 20 7 AVE:20.66pF Ct DISPERSION MAP 25 Ta=25℃ VR=25V n=30pcs 8 30 15 30 30 IR DISPERSION MAP Ta=25℃ f=1MHz VR=10V n=10pcs 16 AVE:117.5pF 25 0 24 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 170 20 1 25 180 15 9 IR DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 10 10 0 190 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 40 Ta=25℃ VR=10V n=30pcs VF DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 9 470 110 5 10 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 520 510 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=25℃ IF=0.5A n=30pcs 100 0.01 600 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 Ta=75℃ 100 REVERSE CURRENT:IR(uA) Ta=125℃ f=1MHz Ifsm 8 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 8.3ms 8.3ms 1cyc 6 4 2 Ifsm 8 t 6 4 2 AVE:9.3ns 0 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS Rev.B 100 2/3 RB400D Diodes 100 Rth(j-c) Mounted on epoxy board IF=10mA IM=1mA 10 1ms REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) D=1/2 0.5 0.01 Sin(θ＝180) DC Sin(θ＝180) D=1/2 DC time 300us 0 0 1 0.001 0.1 10 0 1000 TIME:t(s) Rth-t CHARACTERISTICS 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 2 2 Io 0A 0V 1.5 t T D=1/2 1 VR D=t/T VR=20V Tj=125℃ DC 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.02 1 1000 Io 0A 0V 1.5 t D=1/2 DC 1 T VR D=t/T VR=20V Tj=125℃ 0.5 Sin(θ＝180) Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1