1SS390 Diodes Band switching diode 1SS390 zApplication High frequency switching zExternal dimensions (Unit : mm) 0.8 0.12±0.05 0.6 0.8±0.05 zLead size figure (Unit : mm) 1.6±0.1 1.2±0.05 1.7 zFeatures 1) Ultra small mold type. (EMD2) 2) High reliability EMD2 zConstruction Silicon epitaxial planer zStructure 0.3±0.05 0.6±0.1 JEDEC :SOD-523 ROHM : EMD2 JEITA : SC-79 zTaping dimensions (Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ0.5 0.95±0.06 0 空ポケット zAbsolute maximum ratings (Ta=25°C) Parameter Symbol IF Forward current VR Forward voltage Junction temperature Tj Storage temperature Tstg 8.0±0.15 0.2 2.0±0.05 4.0±0.1 Limits 100 35 125 -55 to +125 1.26±0.05 0 0.6 1.3±0.06 0 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 0.76±0.05 Unit mA V ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR Ct Min. - Typ. - Max. 1.0 10 1.2 Unit V nA pF rf - - 0.9 Ω Conditions IF=10mA VR=25V VR=6V , f=1MHz IF=2mA , f=100MHz , RL=100Ω Rev.B 1/3 1SS390 Diodes zElectrical characteristic curves (Ta=25°C) 1000 100 10 Ta=125℃ 10 Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 10 Ta=25℃ 1 Ta=-25℃ 0.1 5 10 15 20 25 30 0 35 10 REVERSE CURRENT:IR(nA) 840 AVE:840.2mV 830 820 8 0.9 7 6 5 4 3 2 810 0.8 0.5 0.4 0.3 0.2 0 Ct DISPERSION MAP 10 8.3ms 7 6 5 AVE:6.74A 4 3 2 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 8 100 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 8.3ms 1cyc 5 t 1 1 1000 Ifsm 10 0 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.1 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS IF=10mA IM=1mA 10 1ms Sin(θ＝180) D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) DC 0.1 time DC 0.15 D=1/2 0.1 Sin(θ＝180) 0A 0V 0.05 300us 1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 100 0.2 0.2 Rth(j-a) 100 Ta=25℃ VR=6V f=1MHz n=10pcs 0.6 IR DISPERSION MAP Ifsm 30 0.1 AVE:1.89nA VF DISPERSION MAP 9 AVE:0.849pF 0.7 0 10 20 1 Ta=25℃ VR=80V n=30pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=100mA n=30pcs 850 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 PEAK SURGE FORWARD CURRENT:IFSM(A) 1 0.1 0 1.1 1.2 860 FORWARD VOLTAGE:VF(mV) Ta=75℃ 0.01 0.01 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz 100 Ta=125℃ 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 0 Io VR D=t/T VR=40V T Tj=125℃ 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) t Rev.B 125 2/3 1SS390 Diodes 10 0.2 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0.15 D=1/2 Sin(θ＝180) 0.1 0A 0V 0.05 Io t T 0 0 VR D=t/T VR=40V Tj=125℃ 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 8 4 AVE:0.96kV 2 0 125 AVE:5.45kV 6 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1