DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package DESCRIPTION PIN • Switching speed: max. 50 ns BAS29 • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max. 600 mA BAS31 anode BAS35 1 anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common anode common connection • Repetitive peak reverse current: max. 600 mA. APPLICATIONS handbook, halfpage 2 1 • General purpose switching in e.g. surface mounted circuits. 2 1 3 DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. 3 a. Simplified outline. 2 n.c. c. BAS31 diode. 1 2 1 MARKING 3 TYPE NUMBER MARKING CODE(1) BAS29 L20 or ∗A8 BAS31 L21 or ∗V1 BAS35 L22 or ∗V2 b. BAS29 diode. d. BAS35 diode. MAM233 Fig.1 Simplified outline (SOT23) and symbols. Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 2003 Mar 20 3 2 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 110 V − 90 V single diode loaded; see Fig.2; note 1 − 250 mA double diode loaded; see Fig.2; note 1 − 150 mA − 600 mA t = 1 µs − 10 A t = 100 µs − 4 A t=1s − 0.75 A − 250 mW − 600 mA − 5 mJ square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation IRRM repetitive peak reverse current ERRM repetitive peak reverse energy Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 3 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1 V IF = 400 mA − 1.25 V VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C see Fig.5 − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 − 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 4 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA MBG440 300 MBH280 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 400 (1) 100 (2) (3) 200 (2) 0 0 0 100 Tamb (oC) 200 0 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBH327 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Mar 20 5 104 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 MBH282 102 handbook, halfpage MGD003 40 handbook, halfpage IR (µA) Cd (pF) 10 30 (1) 1 (2) 20 10−1 10 10−2 100 0 Tj (oC) 0 200 0 10 (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 20 VR (V) 30 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. 2003 Mar 20 t rr 6 output signal NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Mar 20 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Mar 20 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962