PHILIPS BC857BS

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product specification
Supersedes data of 1997 Jul 09
1999 Apr 26
Philips Semiconductors
Product specification
PNP general purpose double transistor
FEATURES
BC857BS
PINNING
• Low collector capacitance
PIN
• Low collector-emitter saturation voltage
1, 4
emitter
TR1; TR2
• Closely matched current gain
2, 5
base
TR1; TR2
• Reduces number of components and boardspace
6, 3
collector
TR1; TR2
DESCRIPTION
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
6
6
5
5
4
4
TR2
DESCRIPTION
TR1
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
1
2
Top view
3
1
2
3
MAM339
MARKING
TYPE NUMBER
Fig.1
MARKING CODE
BC857BS
Simplified outline (SC-88; SOT363)
and symbol.
3Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
−50
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
Ptot
total power dissipation
Tstg
V
−
−200
mA
−
200
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 26
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
416
K/W
Per device
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−5
µA
nA
Per transistor
ICBO
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
hFE
DC current gain
IC = −2 mA; VCE = −5 V
200
−
450
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−
−100
mV
IC = −100 mA; IB = −5 mA; note 1
−
−
−400
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
−755
−
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600
−655
−750
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
2.2
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
MBH727
400
handbook, full pagewidth
hFE
VCE = −5 V
300
200
100
0
−10−2
−10−1
−1
−10
Fig.2 DC current gain; typical values
1999 Apr 26
4
−102
IC (mA)
−103
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1999 Apr 26
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 26
6
Philips Semiconductors
Product specification
PNP general purpose double transistor
NOTES
1999 Apr 26
7
BC857BS
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 Apr 26
Document order number:
9397 750 05804