PHILIPS BAV99S

BAV99 series
High-speed switching diodes
Rev. 07 — 14 April 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
Package
configuration
NXP
JEITA
JEDEC
BAV99
SOT23
-
TO-236AB
dual series
small
BAV99S
SOT363
SC-88
-
quadruple; 2 series
very small
BAV99W
SOT323
SC-70
-
dual series
very small
1.2 Features and benefits
„ High switching speed: trr ≤ 4 ns
„ Low leakage current
„ Small SMD plastic packages
„ Low capacitance: Cd ≤ 1.5 pF
„ Reverse voltage: VR ≤ 100 V
„ AEC-Q101 qualified
1.3 Applications
„ High-speed switching
„ General-purpose switching
„ Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VR = 80 V
-
-
0.5
μA
-
-
100
V
-
-
4
ns
Per diode
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
[1]
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV99 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAV99; BAV99W
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1),
anode (diode 2)
3
3
1
2
006aaa144
1
2
006aaa763
BAV99S
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 3),
anode (diode 4)
4
anode (diode 3)
5
cathode (diode 4)
6
cathode (diode 1),
anode (diode 2)
6
5
4
1
2
3
6
5
1
2
4
3
006aab101
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAV99
-
plastic surface-mounted package; 3 leads
SOT23
BAV99S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAV99W
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BAV99
A7*
BAV99S
K1*
BAV99W
A7*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
[1]
-
215
mA
[2]
-
125
mA
BAV99S
[1]
-
200
mA
BAV99W
[1]
-
150
mA
[2]
-
130
mA
-
500
mA
BAV99
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak
forward current
square wave
[3]
tp = 1 μs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
-
250
mW
-
250
mW
-
200
mW
tp = 1 s
[1][4]
total power dissipation
Ptot
BAV99
Tamb ≤ 25 °C
BAV99S
Tamb ≤ 85 °C
BAV99W
Tamb ≤ 25 °C
[5]
Per device
BAV99_SER_7
Product data sheet
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj = 25 °C prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5]
Soldering points at pins 2, 3, 5 and 6.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BAV99
-
-
500
K/W
BAV99W
-
-
625
K/W
-
-
360
K/W
-
-
260
K/W
-
-
300
K/W
thermal resistance from
junction to ambient
in free air
[1][2]
thermal resistance from
junction to solder point
BAV99
[3]
BAV99S
BAV99W
[1]
Single diode loaded.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 80 V
-
-
0.5
μA
VR = 25 V; Tj = 150 °C
-
-
30
μA
VR = 80 V; Tj = 150 °C
-
-
50
μA
pF
Per diode
VF
IR
Cd
BAV99_SER_7
Product data sheet
reverse current
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
[1]
VFR
forward recovery voltage
[2]
-
-
1.5
-
-
4
ns
-
-
1.75
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2]
When switched from IF = 10 mA; tr = 20 ns.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
006aab132
103
IF
(mA)
006aab133
102
IR
(μA)
10
(1)
1
(2)
102
10−1
10
(3)
10−2
(1)
(2)
(3)
10−3
(4)
1
10−4
(4)
10−5
10−1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1.4
VF (V)
20
40
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
(4) Tamb = −40 °C
Forward current as a function of forward
voltage; typical values
mbg446
0.8
Cd
(pF)
80
100
VR (V)
(1) Tamb = 150 °C
Fig 1.
60
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mbg704
102
IFSM
(A)
0.6
10
0.4
1
0.2
10−1
0
0
4
8
12
VR (V)
1
16
10
102
103
104
tp (μs)
f = 1 MHz; Tamb = 25 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
BAV99_SER_7
Product data sheet
Fig 4.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
6 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
3.0
2.8
2.2
1.8
1.1
0.9
6
3
1.1
0.8
5
4
2
3
0.45
0.15
0.45
0.15
2.2 1.35
2.0 1.15
2.5 1.4
2.1 1.2
1
2
1
0.48
0.38
1.9
0.15
0.09
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
Fig 7.
pin 1
index
Dimensions in mm
04-11-04
Package outline BAV99 (SOT23/TO-236AB)
Fig 8.
06-03-16
Package outline BAV99S (SOT363/SC-88)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
Fig 9.
04-11-04
Package outline BAV99W (SOT323/SC-70)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
BAV99
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
BAV99S
SOT363
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
-115
-135
BAV99W
[1]
BAV99_SER_7
Product data sheet
SOT323
4 mm pitch, 8 mm tape and reel
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB)
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
8 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88)
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
9 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
1
occupied area
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70)
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
10 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV99_SER_7
20100414
Product data sheet
-
BAV99_SER_6
Modifications:
•
•
•
Section 1.2 “Features and benefits”: updated
Section 8.1 “Quality information”: added
Section 13 “Legal information”: updated
BAV99_SER_6
20100310
Product data sheet
-
BAV99_SER_5
BAV99_SER_5
20080820
Product data sheet
-
BAV99_4
BAV99S_3
BAV99W_4
BAV99_4
20011015
Product specification
-
BAV99_3
BAV99S_3
20010514
Product specification
-
BAV99S_N_2
BAV99W_4
19990511
Product specification
-
BAV99W_3
BAV99_SER_7
Product data sheet
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Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
BAV99_SER_7
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
13 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 April 2010
Document identifier: BAV99_SER_7