DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. DESCRIPTION Code: W1p 1 base 2 emitter 3 collector 3 fpage 1 2 Top view MSB003 Fig.1 SOT23. NPN complements are BFR92 and BFR92A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V IC DC collector current − −25 mA Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW fT transition frequency IC = −14 mA; VCE = −10 V; f = 500 MHz 5 − GHz Cre feedback capacitance IC = −2 mA; VCE = −10 V; f = 1 MHz 0.7 − pF GUM maximum unilateral power gain IC = −14 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C 18 − dB F noise figure IC = −5 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C 2.5 − dB dim intermodulation distortion IC = −14 mA; VCE = −10 V; RL = 75 Ω; Vo = 150 mV; Tamb = 25 °C; f(p+q-r) = 493.25 MHz −60 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −2 V IC DC collector current − −25 mA ICM peak collector current f > 1 MHz − −35 mA Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS up to Ts = 95 °C; note 1 thermal resistance from junction to soldering point Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 3 THERMAL RESISTANCE 260 K/W Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current IE = 0; VCB = −10 V; MIN. TYP. MAX. − − −50 UNIT nA hFE DC current gain IC = −14 mA; VCE = −10 V 20 50 − fT transition frequency IC = −14 mA; VCE = −10 V; f = 500 MHz − 5 − GHz Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 0.75 − pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 0.8 − pF Cre feedback capacitance IC = −2 mA; VCE = −10 V; f = 1 MHz − 0.7 − pF GUM maximum unilateral power gain (note 1) IC = −14 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 18 − dB F noise figure IC = −5 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 2.5 − dB Vo output voltage note 2 − 150 − mV Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 S 1 – S – 11 22 2. dim = −60 dB (DIN 45004B); IC = −14 mA; VCE = −10 V; RL = 75 Ω; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q-r) = 493.25 MHz. November 1992 4 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 MEA347 100 24 V handbook, halfpage 390 Ω L3 3.9 kΩ handbook, halfpage h FE 820 Ω 75 300 Ω L2 680 pF 680 pF 50 75 Ω L1 680 pF 75 Ω DUT 25 16 Ω MEA919 0 10 0 L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. 20 –I C (mA) 30 VCE = −10 V; Tj = 25 °C. Fig.2 Intermodulation distortion test circuit. Fig.3 DC current gain as a function of collector current. MEA920 MEA344 1 6 handbook, halfpage handbook, halfpage Cc (pF) fT (GHz) 0.8 4 0.6 0.4 2 0.2 0 0 10 –V CB (V) 0 20 0 10 IE = ie = 0; f = 1 MHz; Tj = 25 °C. VCE = −10 V; f = 500 MHz; Tj = 25 °C. Fig.4 Fig.5 Collector capacitance as a function of collector-base voltage. November 1992 5 20 –I C (mA) 30 Transition frequency as a function of collector current. Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 MEA921 MEA465 6 5 handbook, halfpage handbook, halfpage F (dB) F (dB) 5 4 4 3 3 2 2 1 1 0 10 –1 0 5 0 10 15 20 25 I C (mA) 1 f (GHz) VCE = −10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C. Ic = −2 mA; VCE = −10 V; Zs = opt.; Tamb = 25 °C. Fig.6 Fig.7 Minimum noise figure as a function of collector current. November 1992 6 10 Minimum noise figure as a function of frequency. Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 November 1992 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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