INTEGRATED CIRCUITS DATA SHEET TDA8542AT 2 × 1.5 W BTL audio amplifier Product specification Supersedes data of 1997 Nov 14 File under Integrated Circuits, IC01 1998 Mar 25 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT FEATURES GENERAL DESCRIPTION • Flexibility in use The TDA8542AT is a two channel audio power amplifier for an output power of 2 × 1.5 W with an 8 Ω load at a 6 V supply. The circuit contains two Bridge-Tied Load (BTL) amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The TDA8542AT comes in a 20-pin SO package. • Few external components • Low saturation voltage of output stage • Gain can be fixed with external resistors • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops APPLICATIONS • High supply voltage ripple rejection • Portable consumer products • Protected against electrostatic discharge • Personal computers • Outputs short-circuit safe to ground, VCC and across the load • Motor-driver (servo). • Thermally protected. QUICK REFERENCE DATA SYMBOL PARAMETER VCC supply voltage Iq quiescent current Istb standby current Po output power THD total harmonic distortion SVRR supply voltage ripple rejection CONDITIONS MIN. 2.2 TYP. 6 MAX. 18 UNIT V − 15 22 mA − − 10 µA THD = 10%; RL = 8 Ω; VCC = 6 V 1 1.5 − W Po = 0.5 W − 0.15 − % 50 − − dB VCC = 6 V ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA8542AT SO20 1998 Mar 25 DESCRIPTION plastic small outline package; 20 leads; body width 7.5 mm 2 VERSION SOT163-1 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT BLOCK DIAGRAM VCCL VCCR handbook, full pagewidth 19 12 − INL− INL+ 17 18 − + 16 OUTL− R VCCL R − − 20 kΩ 3 OUTL+ + 20 kΩ STANDBY/MUTE LOGIC TDA8542AT − INR− INR+ 14 13 − + 15 OUTR− R VCCR R − − 20 kΩ SVR 8 OUTR+ + 5 20 kΩ MODE BTL/SE 4 STANDBY/MUTE LOGIC 6 7 n.c. 1 10 11 20 GND GND GND GND Fig.1 Block diagram. 1998 Mar 25 3 2 LGND 9 RGND MGM211 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT PINNING SYMBOL PIN DESCRIPTION GND 1 ground; note 1 LGND 2 ground, left channel OUTL+ 3 positive loudspeaker terminal, left channel MODE 4 operating mode select (standby, mute, operating) SVR 5 half supply voltage, decoupling ripple rejection BTL/SE 6 BTL loudspeaker or SE headphone operation n.c. 7 not connected OUTR+ 8 positive loudspeaker terminal, right channel RGND 9 ground, right channel GND 10 ground; note 1 GND 11 ground; note 1 VCCR 12 supply voltage, right channel OUTR− 13 negative loudspeaker terminal, right channel INR− 14 negative input, right channel INR+ 15 positive input, right channel INL+ 16 positive input, left channel INL− 17 negative input, left channel OUTL− 18 negative loudspeaker terminal, left channel VCCL 19 supply voltage, left channel GND 20 ground; note 1 handbook, halfpage 20 GND LGND 2 19 VCCL OUTL+ 3 18 OUTL− MODE 4 17 INL− 16 INL+ SVR 5 TDA8542AT BTL/SE 6 15 INR+ n.c. 7 14 INR− OUTR+ 8 13 OUTR− RGND 9 12 VCCR GND 10 11 GND MGM212 Fig.2 Pin configuration. Note 1. Pins 1, 10, 11 and 20 are connected to the leadframe and also to the substrate. They may be kept floating. When connected to the ground-plane the PCB can be used as heatsink. 1998 Mar 25 GND 1 4 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT FUNCTIONAL DESCRIPTION Mode select pin The TDA8542AT is a 2 × 1.5 W BTL audio power amplifier capable of delivering 2 × 1.5 W output power to an 8 Ω load at THD = 10% using a 6 V power supply. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 to 30 dB by external feedback resistors. The device is in the standby mode (with a very low current consumption) if the voltage at the MODE pin is >(VCC − 0.5 V), or if this pin is floating. At a MODE voltage level of less than 0.5 V the amplifier is fully operational. In the range between 1.5 V and VCC − 1.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output caused by charging of the input capacitor. Power amplifier Headphone connection The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the negative side the saturation voltage of a NPN power transistor. The total voltage loss is <1 V and with a 6 V supply voltage and an 8 Ω loudspeaker an output power of 1.5 W can be delivered. A headphone can be connected to the amplifier using two coupling capacitors for each channel. The common GND pin of the headphone is connected to the ground of the amplifier (see Fig.14). In this case the BTL/SE pin must be either on a logic HIGH level or not connected at all. The two coupling capacitors can be omitted if it is allowed to connect the common GND pin of the headphone jack not to ground, but to a voltage level of 1⁄2VCC (see Fig.14). In this case the BTL/SE pin must be either on a logic LOW level or connected to ground. If the BTL/SE pin is on a LOW level, the power amplifier for the positive loudspeaker terminal is always in mute condition. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.3 +18 V VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current − 1 A Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Vsc AC and DC short-circuit safe voltage − 10 V Ptot total power dissipation − 2.2 W operating non-operating QUALITY SPECIFICATION In accordance with “SNW-FQ-611-E”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) 1998 Mar 25 PARAMETER CONDITIONS thermal resistance from junction to ambient in free air 5 VALUE UNIT 60 K/W Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT DC CHARACTERISTICS VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. VCC supply voltage operating 2.2 6 MAX. 18 UNIT V Iq quiescent current RL = ∞; note 1 − 15 22 mA Istb standby current VMODE = VCC − − 10 µA VO DC output voltage note 2 − 2.2 − V VOUT+ − VOUT− differential output voltage offset − − 50 mV IIN+, IIN− input bias current − − 500 nA VMODE input voltage mode select 0 − 0.5 V − operating VCC − 1.5 V mute 1.5 standby VCC − 0.5 − VCC V − − 20 µA IMODE input current mode select 0 < VMODE < VCC VBTL/SE input voltage BTL/SE pin single-ended 0 − 0.6 V BTL 2 − VCC V VBTL/SE = 0 − − 100 µA IBTL/SE input current BTL/SE pin Notes 1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. 2. The DC output voltage with respect to ground is approximately 1⁄2VCC. 1998 Mar 25 6 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT AC CHARACTERISTICS VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified. SYMBOL PARAMETER CONDITIONS Po output power THD = 10% THD = 0.5% THD total harmonic distortion Po = 0.4 W Gv(cl) closed-loop voltage gain note 1 MIN. TYP. MAX. UNIT 1.5 − W 0.9 1.1 − W − 0.15 0.3 % 6 − 30 dB 1.2 Zi(dif) differential input impedance − 100 − kΩ Vn(o) noise output voltage note 2 − − 100 µV SVRR supply voltage ripple rejection note 3 50 − − dB note 4 40 − − dB Vo(mute) output voltage in mute condition note 5 − − 200 µV αcs channel separation 40 − − dB Notes R2 1. Gain of the amplifier is 2 × -------- in test circuit of Fig.3. R1 2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of RS = 0 Ω at the input. 3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including noise. 1998 Mar 25 7 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT TEST AND APPLICATION INFORMATION Using a practical PCB layout with wider copper tracks and some copper area to the IC pins and just under the IC (see Fig.22), the thermal resistance from junction to ambient can be reduced to approximately 56 K/W. For Tamb(max) = 50 °C the maximum total power dissipation Test conditions Because the application can be either Bridge-Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately. 150 – 50 at this PCB layout is: ----------------------- = 1.79 W 56 The thermal resistance = 60 K/W; the maximum sine wave 150 – 25 power dissipation for Tamb = 25 °C is: ---------------------- = 2.1 W 60 For the application VCC = 6 V and RL = 8 Ω the worst case sine wave dissipation is 1.75 W. For Tamb = 60 °C the maximum total power dissipation is: SE application 150 – 60 ---------------------- = 1.5 W 60 Tamb = 25°C if not specially mentioned, VCC = 7.5 V, f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. BTL application The SE application diagram is illustrated in Fig.14. Tamb = 25°C if not specially mentioned, VCC = 6 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. If the BTL/SE pin (pin 6) is connected to ground, the positive outputs (pins 3 and 8) will be in mute condition with a DC level of 1⁄2VCC. When a headphone is used (RL ≥ 25 Ω) the SE headphone application can be used without output coupling capacitors; load between negative output and one of the positive outputs (e.g. pin 3) as common pin. The BTL application diagram is illustrated in Fig.3. The quiescent current has been measured without any load impedance. The total harmonic distortion as a function of frequency was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR. The figure of the mode select voltage (Vms) as a function of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depends on the supply voltage level. Increasing the value of electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2 × Io) at low load impedance (≤16 Ω), the SE application with output capacitors connected to ground is advised. The capacitor value of C4/C5 in combination with the load impedance determines the low frequency behaviour. The THD as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR. Thermal behaviour The measured thermal resistance of the IC package is highly dependent on the configuration and size of the application board. Data may not be comparable between different semiconductors manufacturers because the application boards and test methods are not (yet) standardized. Also, the thermal performance of packages for a specific application may be different than presented here, because the configuration of the application boards (copper area) may be different. General remark The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter. Philips Semiconductors uses FR-4 type application boards with 1 oz copper traces with solder coating. The measurements have been carried out with vertical placed boards. 1998 Mar 25 8 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT BTL APPLICATION handbook, full pagewidth VCC 1 µF R2 R1 50 kΩ 10 kΩ ViL 19 INL− OUTL− 18 INL+ 100 µF 100 nF 12 17 16 C3 47 µF RL OUTL+ 3 OUTR− 1 µF 50 kΩ R4 R3 TDA8542AT INR− 14 INR+ 10 kΩ ViR SVR RL 5 MODE 6 OUTR+ 8 4 BTL/SE R2 Gain left = 2 × -------R1 OUTR− 13 15 2 9 R4 Gain right = 2 × -------R3 GND MGM213 Pins 1, 10, 11 and 20 connected to ground. Fig.3 BTL application. MGD890 30 MGM214 10 handbook, halfpage handbook, halfpage Iq (mA) THD (%) 20 1 (1) 10−1 10 10−2 10−2 0 0 4 8 12 20 16 VCC (V) 10−1 1 Po (W) f = 1 kHz, Gv = 20 dB. (1) VCC = 6 V, RL = 8 Ω. (2) VCC = 7.5 V, RL = 16 Ω. RI = ∞. Fig.4 Iq as a function of VCC. 1998 Mar 25 (2) Fig.5 THD as a function of Po. 9 10 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT MGD892 10 MGD893 −60 handbook, halfpage handbook, halfpage αcs (dB) THD (%) (1) −70 1 (2) (1) −80 (3) (2) 10−1 −90 10−2 10 102 103 104 f (Hz) −100 10 105 102 103 104 f (Hz) 105 VCC = 6 V, Vo = 2 V, RL = 8 Ω. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Po = 0.5 W, Gv = 20 dB. (1) VCC = 6 V, RL = 8 Ω. (2) VCC = 7.5 V, RL = 16 Ω. Fig.7 Channel separation as a function of frequency. Fig.6 THD as a function of frequency. MGD894 −20 MGD895 2.5 handbook, halfpage handbook, halfpage SVRR (dB) Po (W) 2 −40 (1) (2) 1.5 (1) (2) 1 −60 (3) 0.5 −80 10 102 103 104 f (Hz) 0 105 0 VCC = 6 V, Rs = 0 Ω, Vr 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. 8 VCC (V) THD = 10%. (1) RL = 8 Ω. (2) RL = 16 Ω. Fig.8 SVRR as a function of frequency. 1998 Mar 25 4 Fig.9 Po as a function of VCC. 10 12 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT MGD896 3 MGM215 3 handbook, halfpage handbook, halfpage P (W) P (W) (1) 2 2 (1) (2) (2) 1 1 0 0 4 0 8 VCC (V) 12 0 0.5 1 1.5 2 2.5 Po (W) (1) RL = 8 Ω. (2) RL = 16 Ω. f = 1 kHz; Gv = 20 dB. (1) VCC = 6 V, RL = 8 Ω. (2) VCC = 7.5 V, RL = 16 Ω. Fig.10 Worst case power dissipation as a function of VCC. Fig.11 Power dissipation as a function of Po. MGD898 10 o (V) 1 MGL210 16 handbook, halfpage handbook, V halfpage VMODE (V) 12 10−1 standby 10−2 10−3 (1) (2) 8 (3) mute 10−4 4 10−5 10−6 10−1 operating 1 10 Vms (V) 0 102 0 4 8 12 VP (V) Band-pass = 22 Hz to 22 kHz. (1) VCC = 3 V. (2) VCC = 5 V. (3) VCC = 12 V. Fig.12 Vo as a function of Vms. 1998 Mar 25 Fig.13 VMODE as a function of VP. 11 16 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT SE APPLICATION handbook, full pagewidth VCC 1 µF R2 R1 100 kΩ INL− 10 kΩ ViL INL+ 19 470 µF OUTR− 1 µF C4 OUTL− 18 16 C3 47 µF R4 R3 INR− INR+ 10 kΩ SVR MODE BTL/SE R2 Gain left = -------R1 RL = 8 Ω OUTL+ 3 100 kΩ ViR 100 µF 100 nF 12 17 TDA8542AT 14 15 C5 OUTR− 13 470 µF 5 8 4 6 OUTR+ 2 RL = 8 Ω 9 R4 Gain right = -------R3 GND MGM216 Pins 1, 10, 11 and 20 connected to ground. Fig.14 Single-ended application. MGD900 10 MGD899 10 handbook, halfpage handbook, halfpage THD (%) THD (%) 1 1 (1) (2) 10−1 10−1 (3) (1) (2) (3) 10−2 10−2 10−1 1 Po (W) 10−2 10 10 f = 1 kHz, Gv = 20 dB. (1) VCC = 7.5 V, RL = 4 Ω. (2) VCC = 9 V, RL = 8 Ω. (3) VCC = 12 V, RL = 16 Ω. 103 104 f (Hz) 105 Po = 0.5 W, Gv = 20 dB. (1) VCC = 7.5 V, RL = 4 Ω. (2) VCC = 9 V, RL = 8 Ω. (3) VCC = 12 V, RL = 16 Ω. Fig.15 THD as a function of Po. 1998 Mar 25 102 Fig.16 THD as a function of frequency. 12 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT MGD901 −20 MGD902 −20 handbook, halfpage handbook, halfpage αcs (dB) SVRR (dB) −40 −40 (1) −60 (1) (2) (2) (3) −80 −60 (4) (5) −100 10 102 103 (3) 104 f (Hz) −80 10 105 Vo = 1 V, Gv = 20 dB. (1) VCC = 5 V, RL = 32 Ω, to buffer. (2) VCC = 7.5 V, RL = 4 Ω. (3) VCC = 9 V, RL = 8 Ω. (4) VCC = 12 V, RL = 16 Ω. (5) VCC = 5 V, RL = 32 Ω. 102 103 104 f (Hz) 105 RS = 0 Ω, Vr = 100 mV. (1) Gv = 24 dB. (2) Gv = 20 dB. (3) Gv = 0 dB. Fig.17 Channel separation as a function of frequency. Fig.18 SVRR as a function of frequency. MGD903 2 MGM217 3 handbook, halfpage handbook, halfpage Po (W) P (W) 1.6 (1) (1) 1.2 (2) (2) (3) 2 (3) 0.8 1 0.4 0 0 0 4 8 12 VCC (V) 0 16 8 12 VCC (V) 16 THD = 10%. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. THD = 10%. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig.20 Worst case power dissipation as a function of VCC. Fig.19 Po as a function of VCC. 1998 Mar 25 4 13 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT MGD905 2.4 handbook, halfpage P (W) (1) 1.6 (2) (3) 0.8 0 0 0.4 0.8 1.2 Po (W) 1.6 f = 1 kHz. (1) VCC = 12 V, RL = 16 Ω. (2) VCC = 7.5 V, RL = 4 Ω. (3) VCC = 9 V, RL = 8 Ω. Fig.21 P as a function of Po. 1998 Mar 25 14 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT handbook, full pagewidth ADT TA2458 a. Top view of copper. +VCC −OUT1 GND TDA 8542AT +OUT1 100 µF 10 kΩ 100 nF 56 kΩ IN1 10 kΩ 1 20 1 µF MODE 11 kΩ 11 kΩ IN2 56 kΩ 47 µF 11 10 TDA8542AT CIC Nijmegen 1 µF −OUT2 B/S +OUT2 MGM218 b. Top view with components. Fig.22 Printed-circuit board layout (BTL). 1998 Mar 25 15 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC 1998 Mar 25 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 16 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT SOLDERING Wave soldering Introduction Wave soldering techniques can be used for all SO packages if the following conditions are observed: There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. 1998 Mar 25 17 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 25 18 Philips Semiconductors Product specification 2 × 1.5 W BTL audio amplifier TDA8542AT NOTES 1998 Mar 25 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/25/02/pp20 Date of release: 1998 Mar 25 Document order number: 9397 750 03349